• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.72-72
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• 2012

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, electronic devices using two dimensional (2D) atomic crystals have been studied intensely. Especially, graphene which have unprecedented performance fulfillments in versatile research fields leads a parade of 2D atomic crystals. In this talk, I will introduce the electrical characterization and applications of graphene for prominently electrical transistors realization. Even the rising 2D atomic crystals such as hexagonal boron nitride (h-BN), molybdenum disulfide (MoS2) and organic thin film for field effect transistor (FET) toward competent enhancement will be mentioned.

• Polymer(Korea)
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• v.24 no.2
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• pp.237-244
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• 2000

Phenolic resin used as a precursor of carbonized matrix for carbon-carbon composites was modified by addition of molybdenum disilicide (MoSi$_2$) in various concentrations of 0, 4, 12 and 20% by weight to improve the anti-oxidation properties of the composites. The green body was manufactured by a prepreg method and was submitted to carbonization up to 110$0^{\circ}C$. In this work, the oxidation behavior of carbon-carbon composites with MoSi$_2$ as an oxidation inhibitor was investigated at the temperature range of 600-100$0^{\circ}C$ in an air environment. The carbon-carbon composites with MoSi$_2$ showed a significantly improved oxidation resistance due to both the reduction of the porosity formation and the formation of mobile diffusion barrier for oxygen when compared to those without MoSi$_2$. Carbon active sites should be blocked, decreasing the oxidation rate of carbon. This is probably due to the effect of the inherent MoSi$_2$ properties, resulted from a formation of the protective layer against oxygen attack in the composites studied.

• Korean Chemical Engineering Research
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• v.49 no.2
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• pp.195-199
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• 2011

Mo thin films were deposited on soda lime glass at room temperature by using DC magnetron sputtering The electrical and structural properties of the films were investigated by varying DC power and gas pressure as the deposition parameter. As DC power increased, the deposition rate of Mo films was increased and the electrical resistivity was decreased. It was observable that the crystallinity of the films was improved with increasing DC power. As gas pressure decreased, the deposition rate and resistivity of the films were decreased, and long rectangular grains were densely formed. With increasing gas pressure, the grains were transformed to a round shape and the voids on the film surface were increased. It was confirmed that the electrical resistivity of Mo films was increased as the amount of oxygen combined with Mo atoms increased. It was also disclosed that the films have low resistivity as the degree of coupling of oxygen with Mo was reduced due to the enhancement of the crystallinity of the films.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.484-488
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• 2007

Mo(Ti) alloy and pure Cu thin films were subsequently deposited on $SiO_2-coated$ Si wafers, resulting in $Cu/Mo(Ti)/SiO_2$ structures. The multi-structures have been annealed in vacuum at $100-600^{\circ}C$ for 30 min to investigate the outdiffusion of Ti to Cu surface. Annealing at high temperature allowed the outdiffusion of Ti from the Mo(Ti) alloy underlayer to the Cu surface and then forming $TiO_2$ on the surface, which protected the Cu surface against $SiH_4＋NH_3$ plasma during the deposition of $Si_3N_4$ on Cu. The formation of $TiO_2$ layer on the Cu surface was a strong function of annealing temperature and Ti concentration in Mo(Ti) underlayer. Significant outdiffusion of Ti started to occur at $400^{\circ}C$ when the Ti concentration in Mo(Ti) alloy was higher than 60 at.%. This resulted in the formation of $TiO_2/Cu/Mo(Ti)\;alloy/SiO_2$ structures. We have employed the as-deposited Cu/Mo(Ti) alloy and the $500^{\circ}C-annealed$ Cu/Mo(Ti) alloy as gate electrodes to fabricate TFT devices, and then measured the electrical characteristics. The $500^{\circ}C$ annealed Cu/Mo($Ti{\geq}60at.%$) gate electrode TFT showed the excellent electrical characteristics ($mobility\;=\;0.488\;-\;0.505\;cm^2/Vs$, on/off $ratio\;=\;2{\times}10^5-1.85{\times}10^6$, subthreshold = 0.733.1.13 V/decade), indicating that the use of Ti-rich($Ti{\geq}60at.%$) alloy underlayer effectively passivated the Cu surface as a result of the formation of $TiO_2$ on the Cu grain boundaries.

• Tribology and Lubricants
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• v.38 no.4
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• pp.162-169
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• 2022

Cobalt-chromium (CoCr)-based alloys have been used for wear applications because of their excellent mechanical properties and wear resistance. With growing concern over environmental problems, CoCr alloys are expected to be used for various tribological applications in degraded lubrication states. To expand the applicability of the materials, data should be accumulated across a broad spectrum of experimental parameters. In this work, the friction and wear characteristics of cobalt-chromium-tungsten (CoCrW) and cobalt-chromium-molybdenum (CoCrMo) alloys are investigated experimentally. The tests are conducted using a pin-on-reciprocating-plate tribotester in dry lubrication. CoCrW and CoCrMo are used as pin and plate materials to investigate the effect of the counter material. The results show that the friction coefficients between CoCrW and CoCrMo generally range from 0.4 to 0.5. The friction coefficient between the CoCrW pin and plate is found to be slightly small. However, the total wear between the CoCrW pin and plate is found to be the largest. In contrast, the total wear between the CoCrW pin and plate is relatively small. Furthermore, CoCrW may cause a faster wear progression of CoCrMo, especially for the case in which CoCrMo is used as the pin material. The results of this work provide a better understanding of the tribological properties of CoCrW and CoCrMo alloys. In addition, this work provides a practical guideline for the use of CoCrW and CoCrMo from the tribological design viewpoint.

• Transactions of the Korean hydrogen and new energy society
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• v.20 no.3
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• pp.238-244
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• 2009

We investigated the electrochemical properties of lithium/molybdenum sulfide(Li/MoS$_2$) using tetra (ethylene glycol) dimethyl ether(TEGDME) electrolyte. The Li/TEGDME/MoS$_2$ cell showed the first discharge capacity of 288mAhg$^{-1}$. From the XRD, SEM results of the MOS$_2$ electrode in various cut-off voltage during charge-discharge process, MoS$_2$ partly changed into Li$_2$S and Mo during discharge and Li$_2$S partly recovered into MOS$_2$ and Li during charge. Full charged MOS$_2$ electrode showed lump shape of big size, which might be related to agglomerate of MoS$_2$ particles. Therefore, the degradation might be related to decrease of active material for electrochemical reaction by agglomeration of MOS$_2$.

• Journal of the Korean Chemical Society
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• v.30 no.2
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• pp.231-236
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• 1986

Oxidation of $[Mo_2O_4(C_2O_4)_2(OH_2)_2]^{2-}$ with hydrogen chromate yields the molybdenum (VI) complex, $[Mo_2O_4(C_2O_4)_2(OH_2)_2]^{2-}$. Stoichiometry for the reaction of $[Mo_2O_4(C_2O_4)_2(OH_2)_2]^{2-}$ with hydrogen chromate are expressed as ${3Mo_2}^V+2Cr^{VI}\;{\rightleftharpoons}\;{3Mo_2}_{VI}+2Cr^{III}$. Observed rate constants are dependent on $[H+]^2$. The kinetic data are consistent with a mechanism in which three successive single-electron steps convert $Cr^{VI}$to $Cr^{III}$ by way of intermediate Cr^V$ and $Cr^{IV}$. Mechanism of the reaction are presented and discussed.

• Journal of the Korean Chemical Society
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• v.30 no.1
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• pp.57-62
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• 1986

Oxidation of $[Mo_3O_4(C_2O_4)_3(H_2O)_3]^{2-}$ with HCr$O_4^-$ yields the molybdenum(Ⅳ) complex, $[Mo_2O_5(C_2O_4)_2(H_2O)_2]^{2-}$. Stoichiometry for the reaction of $[Mo_3O_4(C_2O_4)_3(H_2O)_3]^{2-}$ with HCr$O_4^-$ are expressed as $2Mo_3^{IV} + 4Cr^{VI} {\to} 3Mo_2^{VI} + 4Cr^{III}$. Observed rate constants are dependent on hydrogen ion concentration. The kinetic data are consistent with a mechanism in which three successive single-electron steps convert $Cr^{VI}$to $Cr^{III}$ by way of intermediate $Cr^V$ and $Cr^{IV}$. Detailed mechanisms are presented and discussed.

• Journal of the Korean Chemical Society
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• v.29 no.3
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• pp.257-264
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• 1985

Dioxobis(3-methoxysalicyaldehydato)molybdeum(VI) complex has been synthesized by reactions of 3-methoxysalicylaldehyde and ammonium paramolybdate in methanol solution. With appropriate primary amine, the resulting complex gave schiff-base complexes, MoO$_2$(CH$_3$O-sal-N-R)$_2$ in which C=O oxide ligands had been replaced by nitrogen. The properties and possible molecular structure of these complexes were discussed by elemental analysis, spectroscopic studies and electric conductivities measurements. It was found that the Mo(VI) complexes contain a cis-MoO$_2$ group since their infrared spectra two Mo=O band at about 900cm$^{-1}$ and the combining ratios for MoO$_2$-ligand are 1 : 2. Also, electronic spectra of molybdenyl complexes assigned to ligand-to-metal charge transfer transition. All of these complexes are yellow or orange, depolar compound and slightly soluble in alcohol, dichloromethane, chloroform and N,N-dimethylformamide.

• Korean Journal of Materials Research
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• v.29 no.5
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• pp.322-327
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• 2019

Hole carrier selective MoOx film is obtained by atomic layer deposition(ALD) using molybdenum hexacarbonyl[$Mo(CO)_6$] as precursor and ozone($O_3$) oxidant. The growth rate is about 0.036 nm/cycle at 200 g/Nm of ozone concentration and the thickness of interfacial oxide is about 2 nm. The measured band gap and work function of the MoOx film grown by ALD are 3.25 eV and 8 eV, respectively. X-ray photoelectron spectroscopy(XPS) result shows that the $Mo^{6+}$ state is dominant in the MoOx thin film. In the case of ALD-MoOx grown on Si wafer, the ozone concentration does not affect the passivation performance in the as-deposited state. But, the implied open-circuit voltage increases from $576^{\circ}C$ to $620^{\circ}C$ at 250 g/Nm after post-deposition annealing at $350^{\circ}C$ in a forming gas ambient. Instead of using a p-type amorphous silicon layer, high work function MoOx films as hole selective contact are applied for heterojunction silicon solar cells and the best efficiency yet recorded (21 %) is obtained.