• 제목/요약/키워드: mobility system

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병원가정간호사업 운영 현황 및 서비스 만족도에 관한 연구 (A Study for the Present Conditions and the Service Satisfaction with Hospital Home Care Service)

  • 홍춘실;오경옥;박미영;심희숙;차영남
    • 가정간호학회지
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    • 제8권2호
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    • pp.121-134
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    • 2001
  • The purpose of this study were to analyze the home care services and to evaluate the client's satisfaction with the home care services provided by home care service center in the C hospital. The data were collected by reviewing charts of 128 home care clients who were receiving home care services at C hospital from October 1997 to September 2000. The subjects for satisfaction of home care service were 20 clients from July 10 to September 30, 2000. The tool for measurement of present condition of home care service was developed by the researchers. The satisfactions of the home care services were measured by using the instrument developed by Im(997). The data were analyzed by using the SPSS/PC+. The results of this study were as followings : 1. Majority of the subjects was female(61.7%). The average of age was 63.5 years. The service has been used mostly by the elderly 60 years of age or older(71.1%). The economic level of most of subjects was in middle class(94.5%). 2. Majority of the subject had a cancer(55.4%), following stroke(25.0%). The average duration of disease for the subjects was 31 months. The average time of hospitalization for the subjects was 3.3 times. The duration of hospitalization was 10$\sim$30 days(26.6%), 30$\sim$60 days(23.4%) and above of the 210 days(9.4%). 3. Most of the subjects used his/her doctor (47.7%), as a consultant, following his/her nurse (28.1%), other patients or their family (21.9%). Most of reasons for a consultation were supportive management(Infusion or medication, 60.94%), following tube management(L-tube or T-tube, 25%), Foley catheter management (15.63%) etc. 4. 28 types of nursing diagnoses were used by the home care service. The nursing diagnosis altered nutrition: less than body requirement were used mostly by the home care service, following risk for infection, impaired skin integrity, impaired swallowing, ineffective airway clearance altered comfort: pain, impaired physical mobility. By the human-response pattern, exchanging(63.2%), moving(7.5%), feeling(10.4%), knowing(5.2%), communicating (2.6%), relating(0.5%) perceiving(0.4%) and choosing(0.3%). There were 42 nursing intervention types were performed by the home care service. By the NIC(nursing intervention classification. McCloskey. Bulech. 1996). physiologic: complex (30.3%) was the most, safety(28.3%), behavioral(20.0%), physiologic: basic(10.8%) and health system(1.7%). Observation or assessment was the most nursing intervention performed by the home care service. following IV infusion. vital sign observation. infusion management and fluid-electrolyte balance management. 5. The level of client's satisfaction with provided home care services showed considerably high(2.67/ 3).

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Hot Wall Epitaxy(HWE)법에 의한 Cdln2S4 단결정 박막 성장과 열처리 효과 (The Effect of Thermal Annealing and Growth of Cdln2S4 Single Crystal Thin Film by Hot Wall Epitaxy)

  • 홍광준;이관교
    • 한국전기전자재료학회논문지
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    • 제15권11호
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    • pp.923-932
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    • 2002
  • A stoichiometric mixture of evaporating materials for CdIn$\_$2/S$\_$4/ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdIn$\_$2/S$\_$4/ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were 630 $\^{C}$ and 420 $\^{C}$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of CdIn$\_$2/S$\_$4/ single crystal thin films measured from Hall effect by van der Pauw method are 9.01$\times$10$\^$16/ cm$\^$-3/ and 219 ㎠/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on CdIn$\_$2/S$\_$4/ single crystal thin films was found to be Eg(T) = 2.7116 eV - (7.74 $\times$ 10$\^$-4/ eV) T$\^$2//(T+434). After the as-grown CdIn$\_$2/S$\_$4/ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of CdIn$\_$2/S$\_$4/ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of V$\_$cd/, V$\_$s/, Cd$\_$int/ and S$\_$int/ obtained by PL measurements were classified as donors or accepters type. And we concluded that the heat-treatment in the S-atmosphere converted CdIn$\_$2/S$\_$4/ single crystal thin films to an optical p-type. Also, we confirmed that In in CdIn$\_$2/S$\_$4/GaAs did not from the native defects because In in CdIn$\_$2/S$\_$4/ single crystal thin films existed in the form of stable bonds.

Hot Wall Epitaxy (HWE)에 의한 성장된 $ZnIn_2S_4/GaAs$ 에피레이어의 광학적 특성 (Optical Properties of $ZnIn_2S_4/GaAs$ Epilayer Grown by Hot Wall Epitaxy method)

  • 홍광준;이관교
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.175-178
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    • 2004
  • The stochiometric mixture of evaporating materials for the $ZnIn_2S_4$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_2S_4$ single crystal thin film, $ZnIn_2S_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_2S_4$ sing1e crystal thin film was about $0.5\;{\mu}m/hr$. The crystalline structure of $ZnIn_2S_4$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $ZnIn_2S_4$ single crystal thin film measured from Hall effect by van der Pauw method are $8.51{\times}10^{17}\;cm^{-3}$, $291\;cm^2/V{\cdot}s$ at $293_{\circ}\;K$, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $ZnIn_2S_4$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_O$ and the crystal field splitting ${\Delta}Cr$ were 0.0148 eV and 0.1678 eV at $10_{\circ}\; K$, respectively. From the photoluminescence measurement of $ZnIn_2S_4$ single crystal thin film, we observed free excition $(E_X)$ typically observed only in high quality crystal and neutral donor bound exciton $(D^{o},X)$ having very strong peak intensity The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively, The activation energy of impurity measured by Haynes rule was 130 meV.

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Hot Wall Epitaxy(HWE)법에 의한 CdGa2Se4 단결정 박막 성장과 열처리 효과 (The Effect of Thermal Annealing and Growth of CdGa2Se4 Single Crystal Thin Film by Hot Wall Epitaxy)

  • 홍명석;홍광준
    • 한국전기전자재료학회논문지
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    • 제20권10호
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    • pp.829-838
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    • 2007
  • The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD).The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}\;cm^{-3},\;345\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)\;=\;2.6400\;eV\;-\;(7.721{\times}10^{-4}\;eV/K)T^2/(T+399\;K)$. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. We concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4/GaAs$ did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

10학년 과학 교과서 지구 분야에 등장하는 과학적 모델 분석 (Analysis of Scientific Models in the Earth Domain of the 10th Grade Science Textbooks)

  • 오필석;전원선;유정문
    • 한국지구과학회지
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    • 제28권4호
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    • pp.393-404
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    • 2007
  • 본 연구의 목적은 우리나라 10학년 과학 교과서 지구 분야에 등장하는 과학적 모델을 분류해 보는 것이었다. 과학적 모델을 표상 매체, 표상 방법, 모델의 가동성이라는 세 가지 차원에서 검토할 수 있도록 개발된 분류틀을 이용하여 11종 교과서의 지구과학 관련 단원을 분석하였다. 연구의 결과, 과학 교과서들은 지구과학의 세부 영역의 본성이 반영된 영역-특이적인 모델들을 수록하고 있는 것을 알 수 있었다. 즉, '지구의 변동' 단원은 접근이 용이하지 않은 지구의 내부 구조나 판들의 운동을 표상하는 모상 모델을 많이 포함하고 있었는데, 이들은 대부분 평면적 그림 모델과 정적 모델에 속하였다. '대기와 해양' 단원에서는 일기도나 해수의 온도와 염분을 나타낸 등치선도 등을 포함한 기호모델과 도해적 모델이 많이 등장하였다. '태양계와 은하' 단원에서는 규모가 큰 천체나 그들의 운동을 표상하는 모상 모델이나 유비 모델의 비율이 상대적으로 높게 나타났다. 이러한 분석 결과가 지구과학 교육과 관련 연구에 시사하는 바를 논의하였다.

레이저 적층 제조 기술을 이용한 상악 무치악 환자의 임플란트 고정성 보철 수복 증례 (Implant-supported prosthetic rehabilitation for the edentulous maxilla using the additive manufacturing technology: A case report)

  • 김희경
    • 대한치과보철학회지
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    • 제56권2호
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    • pp.173-178
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    • 2018
  • 직접식 금속 레이저 소결 방식 시스템은 기공 오차 및 주조 결함 없이 제작 비용 및 제조 시간 단축을 장점으로 전악 임플란트 지지 고정성 보철물 제작에 유용하다. 본 증례에서는 직접식 금속 레이저 소결 방식과 치과용 캐드캠으로 제작된 단일구조 지르코니아 크라운을 사용하여 무치악 상악에서 임플란트 지지 고정성 치과 보철물의 성공적인 결과를 보고하고 임상적 의의를 평가하였다. 51세의 건강한 중년 여성이 상악 전 치아의 동요도를 주소로 서울대학교 치과병원에 내원하였다. 모든 상악 치아 발치 후 직접식 금속 레이저 소결 기술 및 캐드캠 단일구조 지르코니아 크라운을 사용하여 코발트-크롬 프레임을 포함하는 임플란트 지지 고정성 치과 보철물을 제작하였다. 최종 수복물 장착 6개월 후, 기계적 및 생물학적 합병증은 발견되지 않았고 보철물은 기능 및 심미적으로 만족스러운 결과를 보였다. 직접식 금속 레이저 소결 시스템을 이용하여 추가적인 기공 작업 없이 임플란트 지지 고정성 보철물을 제작하여 제조 시간을 단축하고 신뢰할 수 있는 정확도와 적합성을 얻었다.

Hot Wall Epitaxy(HWE)법에 의한 $AgInS_2$단결성 박막의 성장과 가전자대 갈라짐에대한 광전류 연구 (Photocurrent Study on the Splitting of the Valence Band and Growth of $AgInS_2$GaAs Single Crystal Thin Film by Hot Wall Epitaxy)

  • 홍광준
    • 한국결정학회지
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    • 제12권4호
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    • pp.197-206
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    • 2001
  • 수평 전기로에서 AgInS₂ 다결정을 합성하여 HWE(Hot Wall Epitaxy)방법으로 AgInS₂ 단결정 박막을 반절연성 GaAs(100)기판에 성장시켰다. AgInS₂ 단결정 박막의 성장 조건은 증발원의 온도 680℃, 기판의 온도 410℃였고 성장 속도는 0.5㎛/hr였다. AgInS₂ 단결정 박막의 결정성의 조사에서 10 K에서 광발광(photoluminescence)스펙트럼이 597.8 nm(2.0741 eV)에서 exciton emission스펙트럼이 가장 강하게 나타났으며, 또한 이중결정 X-선 요동곡선(DCRC)의 박폭치(FWHM)도 121 arcsec로 가장 작아 최적 성장 조건임을 알수 있었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 9.35×10/sup 16/㎤, 294㎠/V·s 였다. AgInS₂ /SI(SEmi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap E/sub g/(T)는 Varshni 공식에 따라 계산한 결과 2.1365eV-(9.89×10/sup-3/eV/K/)T²(T+2930K)이었으며 광전류 스펙트럼으로부터 Hamiltopn matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting Δcr값이 0.1541eV이며 spin-orbit Δso 값은 0.0129eV임을 확인하였다. 10K일때 광전류 봉우리들은 n=1 일때 A₁-, B-₁와 C₁-exction 봉우림을 알았다.

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Hot Wall Epitaxy(HWE)에 의한 $ZnGa_2Se_4$단결정 박막 성장과 특성에 관한 연구 (Growth and Characterization of $ZnGa_2Se_4$ Single Crystal Thin Films by Hot Wall Epitaxy)

  • 장차익;홍광준;정준우;백형원;정경아;방진주;박창선
    • 한국결정학회지
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    • 제12권3호
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    • pp.127-136
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    • 2001
  • ZnGa₂Se₄단결정 박막은 수평 전기로에서 함성한 ZnGa₂Se₄다결정을 증발원으로하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판(반절연성-GaAs(100))의 온도를 각각 610℃, 450℃로 고정하여 단결정 박막을 성장하였다. 10 K에서 측정한 광발광 exciton 스펙트럼과 이중결정 X-선 요동곡선(DCRC)의 반치폭(FWHM)을 분석하여 단결정 박막의 최적 성장 조건을 얻었다. Hall효과는 van der Pauw방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293 K에서 각각 9.63×10/sup 17/㎤, 296 ㎠/V·s였다. 광전류 봉우리의 10 K에서 단파장대의 가전자대 갈라짐(splitting)에의해서 측정된 Δcr (crystal field splitting)은 183.2meV, △so (spin orbit splitting)는 251.9meV였다. 10K의 광발광 측정으로부터 고품질의 결정에서 볼 수 있는 free exciton 과 매우 강한 세기의 중성 받개 bound exciton등의 피크가 관찰되었다. 이때 중성 받개 bound exciton등의 피크가 관찰되었다. 이때 중성 반개 bound excition의 반치폭과 결합에너지는 각각 11meV와 24.4meV였다. 또한 Hanes rule에 의해 구한 불순물의 활성화 에너지는 122meV였다.

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Epigenetic control of LTR retrotransposons in plant germline and somatic cells

  • Lee, Seung Cho;Parent, Jean-Sebastien;Ernst, Evan;Berger, Frederic;Grimanelli, Daniel;Martienssen, Robert A.
    • 한국작물학회:학술대회논문집
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    • 한국작물학회 2017년도 9th Asian Crop Science Association conference
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    • pp.20-20
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    • 2017
  • Plant genomes include heterochromatic loci that consist of repetitive sequences and transposable elements. LTR retrotransposon is the major class of transposons in advanced plants in terms of proportion in plant genome. The elements contribute not only to genome size but also to genome stability and gene expression. A number of cases have been reported transposon insertions near genic regions affect crop traits such as fruit pigments, stress tolerance, and yields. Functional LTR retrotransposons produce extrachromosomal DNA from genomic RNA by reverse transcription that takes place within virus-like-particles (VLPs). DECREASED DNA METHYLATION 1 (DDM1) plays important roles in maintaining DNA methylation of heterochromatin affecting all sequence contexts, CG, CHG, and CHH. Previous studies showed that ddm1 mutant exhibits massive transcription of retrotransposons in Arabidopsis, but only few of them were able to create new insertions into the genome. RNA-dependent RNA POLYMERASE 6 (RDR6) is known to function in restricting accumulation of transposon RNA by processing the transcripts into 21-22 nt epigenetically activated small interfering RNA (easiRNA). We purified VLPs and sequence cDNA to identify functional LTR retrotransposons in Arabidopsis ddm1 and ddm1rdr6 plants. Over 20 LTR copia and gypsy families were detected in ddm1 and ddm1rdr6 sequencing libraries and most of them were not reported for mobility. In ddm1rdr6, short fragments of ATHILA gypsy elements were detected. It suggests easiRNAs might regulate reverse transcription steps. The highest enriched element among transposon loci was previously characterized EVADE element. It has been reported that active EVADE element is more efficiently silenced through female germline than male germline. By genetic analyses, we found ddm1 and rdr6 mutation affect maternal silencing of active EVADE elements. DDM1-GFP protein accumulated in megaspore mother cell but was not found in mature egg cell. The fusion protein was also found in early embryo and maternal DDM1-GFP allele was more dominantly expressed in the embryo. We observed localization of DDM1-GFP in Arabidopsis and DDM1-YFP in maize and found the proteins accumulated in dividing zone of root tips. Currently we are looking at cell cycle dependency of DDM1 expression using maize system. Among 10 AGO proteins in Arabidopsis, AGO9 is specifically expressed in egg cell and shoot meristematic cells. In addition, mutation of AGO9 and RDR6 caused failure in maternal silencing, implying 21-22 nt easiRNA pathway is important for retrotransposon silencing in female gametophyte or/and early embryo. On the other hand, canonical 24 nt sRNA-directed DNA methylation (RdDM) pathways did not contribute to maternal silencing as confirmed by this study. Heat-activated LTR retrotransposon, ONSEN, was not silenced by DDM1 but the silencing mechanisms require RdDM pathways in somatic cells. We will propose distinct mechanisms of LTR retrotransposons in germline and somatic stages.

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Epigenetic control of LTR retrotransposons in plant germline and somatic cells

  • Lee, Seung Cho;Parent, Jean-Sebastien;Ernst, Evan;Berger, Frederic;Grimanelli, Daniel;Martienssen, Robert A.
    • 한국작물학회:학술대회논문집
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    • 한국작물학회 2017년도 9th Asian Crop Science Association conference
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    • pp.97-97
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    • 2017
  • Plant genomes include heterochromatic loci that consist of repetitive sequences and transposable elements. LTR retrotransposon is the major class of transposons in advanced plants in terms of proportion in plant genome. The elements contribute not only to genome size but also to genome stability and gene expression. A number of cases have been reported transposon insertions near genic regions affect crop traits such as fruit pigments, stress tolerance, and yields. Functional LTR retrotransposons produce extrachromosomal DNA from genomic RNA by reverse transcription that takes place within virus-like-particles (VLPs). DECREASED DNA METHYLATION 1 (DDM1) plays important roles in maintaining DNA methylation of heterochromatin affecting all sequence contexts, CG, CHG, and CHH. Previous studies showed that ddm1 mutant exhibits massive transcription of retrotransposons in Arabidopsis, but only few of them were able to create new insertions into the genome. RNA-dependent RNA POLYMERASE 6 (RDR6) is known to function in restricting accumulation of transposon RNA by processing the transcripts into 21-22 nt epigenetically activated small interfering RNA (easiRNA). We purified VLPs and sequence cDNA to identify functional LTR retrotransposons in Arabidopsis ddm1 and ddm1rdr6 plants. Over 20 LTR copia and gypsy families were detected in ddm1 and ddm1rdr6 sequencing libraries and most of them were not reported for mobility. In ddm1rdr6, short fragments of ATHILA gypsy elements were detected. It suggests easiRNAs might regulate reverse transcription steps. The highest enriched element among transposon loci was previously characterized EVADE element. It has been reported that active EVADE element is more efficiently silenced through female germline than male germline. By genetic analyses, we found ddm1 and rdr6 mutation affect maternal silencing of active EVADE elements. DDM1-GFP protein accumulated in megaspore mother cell but was not found in mature egg cell. The fusion protein was also found in early embryo and maternal DDM1-GFP allele was more dominantly expressed in the embryo. We observed localization of DDM1-GFP in Arabidopsis and DDM1-YFP in maize and found the proteins accumulated in dividing zone of root tips. Currently we are looking at cell cycle dependency of DDM1 expression using maize system. Among 10 AGO proteins in Arabidopsis, AGO9 is specifically expressed in egg cell and shoot meristematic cells. In addition, mutation of AGO9 and RDR6 caused failure in maternal silencing, implying 21-22 nt easiRNA pathway is important for retrotransposon silencing in female gametophyte or/and early embryo. On the other hand, canonical 24 nt sRNA-directed DNA methylation (RdDM) pathways did not contribute to maternal silencing as confirmed by this study. Heat-activated LTR retrotransposon, ONSEN, was not silenced by DDM1 but the silencing mechanisms require RdDM pathways in somatic cells. We will propose distinct mechanisms of LTR retrotransposons in germline and somatic stages.

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