• Title/Summary/Keyword: mobility system

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Enhanced Transport and Risk of a Highly Nonpolar Pollutant in the Presence of LNAPL in Soil-groundwater System: In Case of p-xylene and benz[a]anthracene (LNAPL에 의한 소수성 유기오염물질의 지하환경 내 이동성 변화가 위해성 증가에 미치는 영향: p-xylene과 benz[a]anthracene의 경우)

  • Ryu, Hye-Rim;Han, Joon-Kyoung;Kim, Young-Jin;Nam, Kyoung-Phile
    • Journal of Soil and Groundwater Environment
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    • v.12 no.4
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    • pp.25-31
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    • 2007
  • Characterizing the risk posed by a mixture of chemicals is a challenging task due to the chemical interactions of individual components that may affect their physical behavior and hence alter their exposure to receptors. In this study, cell tests that represent subsurface environment were carried out using benz[a]anthracene (BaA) and p-xylene focusing on phasetransforming interaction to verify increased mobility and risk of highly sorbed pollutants in the presence of less sorbed, mobile liquid pollutants. A transport model was also developed to interpret results and to simulate the same process on a field scale. The experimental results showed that BaA had far greater mobility in the presence of p-xylene than in the absence of that. The main transport mechanisms in the vadose zone were by dissolution to p-xylene or water. The transport model utilizing Defined Time Steps (DTS) was developed and tested with the experimental results. The predicted and observed values showed similar tendency, but the more work is needed in the future study for more precise modeling. The field-scale simulation results showed that transport of BaA to groundwater table was significantly faster in the presence of NAPL, and the oral carcinogenic risk of BaA calculated with the concentration in groundwater was 15${\sim}$87 times larger when mixed with NAPL than when solely contaminated. Since transport rate of PAHs is very slow in the subsurface without NAPL and no degradation of PAHs was considered in this simulation during the transport, the increase of risk in the presence of NAPL is expected to be greater for the actual contaminated site.

The study of growth and characterization of $AgInSe_2$ single crystal thin film by hot wall epitaxy (Hot Wall Epitaxy(HWE)에 의한 $AgInSe_2$단결정 박막 성장과 특성에 관한 연구)

  • 홍광준
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.2
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    • pp.197-206
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    • 1999
  • The stochiometric mixture of evaporating materials for the $AgInSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the $AgInSe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $C_0$ were 6.092 $\AA$ and 11.688 $\AA$, respectively. To obtain the single crystal thin films of AgInSe$_2$, the mixed crystal was deposited on thoroughly etched semi-insulator GaAs(100) substrate by HWE system. The source and substrate temperature were fixed to $610^{\circ}C$ and $450^{\circ}C$ respectively, and the thickness of the single thin films was obtained to 3.8 $\mu\textrm{m}$. The crystallization of single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray dirrfaction (DCXD). The Hall effect was measured by the method of van der Pauw and carrier density and mobility dependence on temperature were studied. The carrier density and mobility of $AgInSe_2$single crystal thin films deduced from Hall data are $9.58{\times}10^{22} electron/m^3,\; 3.42{\times}10^{-2}m^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $AgInSe_2$single crystal thin film, the spin orbit coupling $\Delta$So and the crystal field splitting $\Delta$Cr were obtained to 0.29 eV and 0.12 eV at 20 K respectively. From PL peaks measured at 20 K, 881.1 nm (1.4071 eV) and 882.4 nm (1.4051 eV) mean $E_x^U$ the upper polariton and $E_x^L$ the lower polariton of the free exciton $(E_x)$, also 884.1 nm (1.402 eV) express $I_2 peak of donor-bound exciton emission and 885.9 nm (1.3995 Ev) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 887.5 nm (1.3970 eV) was analyzed to be PL peak due to DAP.

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Growth and optical properties for MgGa2Se4 single crystal thin film by hot wall epitaxy (Hot wall epitaxy법에 의한 MgGa2Se4 단결정 박막 성장과 광학적 특성)

  • Moon, Jong-Dae;Hong, Kwang-Joon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.3
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    • pp.99-104
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    • 2011
  • A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. The crystal structure of these compounds has a rhombohedral structure with lattice constants $a_0=3.953\;{\AA}$, $c_0=38.890\;{\AA}$. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of $MgGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method were $6.21{\times}10^{18}\;cm^{-3}$ and 248 $cm^2/v{\cdot}s$ at 293 K, respectively. The optical absorption of $MgGa_2Se_4$ single crystal thin films was investigated in the temperature range from 10 K to 293 K. The temperature dependence of the optical energy gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's equation, $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$ and ${\beta}=251\;K$, respectively.

Geochemical Variation of Hwangsan Volcanic Complex by Large Hydrothermal Alteration (대규모 열수변질작용에 따른 황산 화산암복합체의 지구화학적 변화특성)

  • Kim, Eui-Jun;Hong, Young-Kook;Chi, Se-Jung
    • Economic and Environmental Geology
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    • v.44 no.2
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    • pp.95-107
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    • 2011
  • The Hwangsan volcanic rocks, hosting the Moisan epithermal Au-Ag deposit arc widely distributed throughout the Seongsan district, and associated with large hydrothermal alteration. They were analyzed as the Moisan and around voleanic rocks, and most of them show dacitic to rhyolitic compositions. Hydrothermal alteration related to epithermal system causes the host rocks to show the geochemical variation due to high mobility of alkali elements. These features can be applied for quantitative estimates of alteration intensity. Alteration intensity of volcanic rocks from the Moisan ranges from subtle to intense, based on AI vs. $Na_2O$ diagram. The pattern that ($CaO+Na_2O$) content decrease with increasing $K_2O$ content results from sericitic alteration, in which hydrothermal fluids continually provide $K^+$ into country rocks but remove $Ca^{2+}$ and $Na^{2+}$ of feldspars within country rocks. The decrease of ($CaO+Na_2O$) with decreasing $K_2O$ in some samples from the Moisan may be caused by advanced argillic alteration that all alkali elements are entirely removed from country rocks by acid hydrothermal fluids. Two alteration trends, based on Al and CCPI alteration indices suggest both sericitic alterations of feldsaprs to illite and sericite+chlorite$^{\circ}{\ae}$pyritc alteration of high Mg and Fe activities. Trace and Rare Earth Elements patterns show the similar geochemical variation related to hydrothermal alteration. Of LIL elements, strong depletion of $Sr^{2+}$, substituting for $Ca^{2+}$ in feldspars, appears to be resulted from removal of $Ca^{2+}$, during replacement of feldspars to alumino-silicates or phyllo silicates minerals by hydrothermal fluids. Relatively low total REEs contents (Moisan: 119-182 ppm; Seongsan: 111-209 ppm) and gently negative slopes suggest that significant mobility of LREEs appear to occur during hydrothermal alteration.

The study of growth and characterization of CuGaSe$_2$ single crystal thin films by hot wall epitaxy (HWE(Hot wall epitaxy)에 의한 CuGaSe$_2$단결정 박막 성장과 특성에 관한 연구)

  • 홍광준;백형원
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.3
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    • pp.189-198
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    • 2000
  • The stochiometric mixture of evaporating materials for the $CuGaSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0}$ and $c_0$ were 5.615 $\AA$ and 11.025 $\AA$, respectively. To obtains the single crystal thin films, $CuGaSe_2$mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5$\mu\textrm{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 150 K and by polar optical scattering in the temperature range 150 K to 293 K. The optical energy gaps were found to be 1.68 eV for CuGaSe$_2$sing1e crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by $\alpha$ = $9.615{\times}10^{-4}$eV/K, and $\beta$ = 335 K. From the photocurrent spectra by illumination of polarized light of the $CuGaSe_2$single crystal thin films. We have found that values of spin orbit coupling $\Delta$So and crystal field splitting $\Delta$Cr was 0.0900 eV and 0.2498 eV, respectively. From the PL spectra at 20 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626 eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352 eV, 0.0932 eV, respectively.

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MIMIC 94 GHz high isolation single balanced cascode mixer (94 GHz 대역의 높은 격리 특성의 MIMIC single balanced cascode 믹서)

  • Lee, Sang-Jin;An, Dan;Lee, Mun-Kyo;Moon, Sung-Woon;Bang, Suk-Ho;Baek, Tae-Jong;Kwon, Hyuk-Ja;Jun, Byoung-Chul;Yoon, Jin-Seob;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.9
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    • pp.25-33
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    • 2007
  • In this paper, the high isolation and wideband 94 GHz MIMIC(Millimeter-wave Monolithic Integrated Circuit) single balanced cascode mixer was designed and fabricated. Also, we designed and fabricated a 3 dB tandem coupler which has a high isolation and wideband characteristic. The single balanced resistive mixer which does not require an external IF balun was designed using the 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT(High Electron Mobility Transistor). The DC characteristics of MHEMT's are 665 mA/mm of drain current density, 691 mS/mm of maximum transconductance. The current gain cut-off frequency($f_T$) is 189 GHz and the maximum oscillation frequency($f_{max}$) is 334 GHz. A 94 GHz single balanced cascode mixer was fabricated using our 0.1 ${\mu}m$ MHEMT MIMIC process. From the measurements, the fabricated couplers showed wideband characteristics. The conversion loss of single balanced cascode mixer was 9.8 dB at an LO power of 10.9 dBm. The LO to RF isolation of single balanced cascode mixer was 29.5 dB at 94 GHz. We obtained in this study a higher LO-RF isolation compared to some other single balanced mixers.

The study of growth and characterization of CuGaTe$_2$single crystal thin films by hot wall epitaxy (Hot wall epitaxy(HWE) 방법에 의한 CuGaTe$_2$단결정 박막 성장과 특성에 관한 연구)

  • 홍광준;이관교;이상열;유상하;정준우;정경아;백형원;방진주;신영진
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.6
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    • pp.425-433
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    • 2000
  • The stochiometric mix of evaporating materials for the $CuGaTe_2$single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuGaTe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0 and c_0$ were 6.025 $\AA$ and 11.931 $\AA$, respectively. To obtain the single crystal thin films, $CuGaTe_2$mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $670^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is 2.1$\mu\textrm{m}$. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. The carrier density and mobility of $CuGaTe_2$single crystal thin films deduced from Hall data are $8.72{\times}10{23}$$\textrm m^3$, $3.42{\times}10^{-2}$ $\textrm m^2$/V.s at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuGaTe_2$single crystal thin film, we have found that the values of spin orbit coupling $\Delta$s.o and the crystal field splitting $\Delta$cr were 0.0791 eV and 0.2463 eV at 10 K, respectively. From the PL spectra at 10 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0470 eV and the dissipation energy of the donor-bound exciton and acceptor-bound exciton to be 0.0490 eV, 0.0558 eV, respectively.

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A New Approach to Mobile Device Design - focused on the Communication Tool & it's GUI for Office Workers in the Near Future - (모바일 기기 디자인의 새로운 접근 - 근 미래 작업환경에서의 커뮤니케이션 도구 디자인과 GUI 연구를 중심으로 -)

  • Yang, Sung-Ho
    • Archives of design research
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    • v.19 no.2 s.64
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    • pp.31-42
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    • 2006
  • This study originates from the following critical mind; what will the office of the future be like? and what technology will we rely upon most to communicate with colleagues or to access business information. In the office environment today, new technology has compelled new work paradigm and has greatly affected the capabilities of the individual to work in a more productive and efficient manner. However, even though new computer technology has changed the business world so rapidly, it is very difficult to see the changes that have been taken place. As an aim of the study, creating a mobile tool for office workers that successfully supports their work and communication was explored, and this study explored future work environment with a 5 years technological and social perspective. As a result of this study, the bON brings new visions to the mobile professionals via various interfaces. The bON, a mobile device, is both a system of work and of communication for office workers. The bON, as an integrated tool for working and communicating, forms the basis for a mobile information gateway that is equally capable of functioning as a mobile desk. The basic underlying idea is that all formal meeting places and hallways in the office are equipped with large wall-mounted screens. The bON collaborates with these media in various ways to enhance productivity and efficiency. The main challenge for the bON to enhance both mobility and quality of information is using new technology including bendable and flexible display and soft material display and sensors. To answer for the strong needs for mobility, the whole size of the device is fairly small while the screen is rolled inside the device. For Graphical User Interface, moreover, a new technique called Multi-layering Interface was adopted to stretch user's visual limits and suggests new direction in designing mobile device, equipped with small size display.

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A study on the establishment and regional strunture of Seoul metropolitan region (서울대도시권역의 설정과 지역구조에 관한 연구)

  • ;;Lee, Hee-Yeon;Song, Jong-Hong
    • Journal of the Korean Geographical Society
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    • v.30 no.1
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    • pp.35-56
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    • 1995
  • During the last two decades, Korea has achieved remarkable economic growth. In this process the nation has become urbanized and industrialized. But we have also encountered widening regional disparity, housing shortage of larger cities, transportation congestion, environmental pollution and many other problems. Rapid increasing urbanization and continuous migration toward Seoul since the late 1960s have been one of the major concerns of government. Government has sought ways to moderate the population increase in Seoul. The regulation which include new town development near Seoul and dispersion strategies of higher education and other administration and living facilities outside of Seoul havemade a great expansion of the spatial influence of Seoul city. Seoul metropolitan reaion has evolved as the most powerful center of political and economical spaces. Generally within a metropolitan region, there exists a growing mutual interdependence economically, as well as socially between a central city and its surrounding area. Seoul metropolitan region manifests itself not only as a coherent system of urbanized regions, but also as an integral part of the daily urban system. The surrounding Gyunggi province and Seoul city become closely linked both economically and functionally, constituting true functlonai urban system. This study is primarily undertaken with the purpose of delineation of the sphere of influence of Seoul city in 1990. At the time of 1985, Seoul metropolitan region was delineated according to the result of the study which was performed by Korea Research Institute for Human Settlements. Afterward, the rapid speed of metropolitanization process with dramatic increase in mobility through the provision of wider transportation system across the Capital region have evolved, resulting in the great expansion of the spatial influence of Seoul city. So this study examines the expanded area of Seoul metropolitan regin during the period of 1985-90. In order to delineate Seoul metropolitan region, the indices of urbanization and functional linkage are selected. Variables included in the measurement of the urbanization level are agricultural structure, population characteristics, manufacturing and service industries, and cultural aspects such as newspaper circulation, the ratio of car ownership and piped water supply. Variables included in the measurement of functional linkage are commuting, shopping pattern, centralized service such as medical facilities and trade of agricultural products. The standardization method and factor analysis are employed in making the delineation of Seoul metropolitan region. According to the result of this study, 2 cities, 8 Eups and 46 Myuns are included Seoul metropolitan region in 1990. If we compare this delineated area in 1990 to that of 1985, we can find the distinctive pattern of expanded axes according to the main transportation routes such as Seoul-Suweon, Seoul-Gwangju, Seoul-Incheon. In 199O, all the Gyunggi province, except a few Myuns located at the north and northwest part of Gyunggi province, are included in Seoul metropolitan region. Furthermore, this study attempts to the analysis of regional structure of Seoul metropolitan region according to the functional characteristics of each city and Gun. Variables included in this analysis are the new residential function, manufacturing function, service function, education and infermation function, public facility function and agricultural function. Factor analysis and cluster analysis are employed in making regionalization. Seoul metropolitan reaion is subdivided into four subregions which reflect different functional specialization. The first group is the specialized region of newly formed residential function. The second group is the specialized reaion of manufacturing function. The third group is the specialized region of service function. And the fourth group has little specialized in terms of manufacturing, service, and residential function. But this region has some potentiality of development when Seoul metropolitan region grow continuously. Seoul metropolitan region accounted for 43% of national population, despite 11.8% of national land size in 1990. Although Seoul metropolitan region enjoys important agglomeration economies, it also has huge social cost in the form of transportation congestion, housing shortage, rapid increase of land value, environment pollution, and etc. Efficient metropolitan plan making is a vital element in promoting Seoul's economic development and providing high quality living environment at low cost. In the light of the result of this study, the outer ring of Seoul metropolitan region, especially northeastern part, are underdeveloped compared to overdeveloped southwestern area. It is needed to develop the guidelines for the implement of the growth control and management plan, inducing more balanced development for whole Seoul metropolitan reaion.

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The Method of Participatory Government to Introduce the System of Autonomous Police (참여정부의 자치경찰제 도입방안)

  • Jung, Jin-Hwan
    • Korean Security Journal
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    • no.10
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    • pp.355-385
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    • 2005
  • As the system of autonomous police that has been debated for long time is fixed to be introduced by the program of participatory government, this treatise intends to analyze main contents and review controversial items in order to present supplementary measures. The program of participatory government to introduce autonomous police in Korea focuses on converting the autonomous police of Korea from centralized police administration in order to provide 'customized security service' that is appropriate to the regional environment. Thus, if relevant city, county or district considers that it is required to introduce the system autonomous police, the assembly may enforce the decision by enacting ordinance. For enforcement, organization in the unit of section will be established in the line of mayor, county headman and district office. The main role will be security service that is closely related to the life of inhabitants such as crime prevention, patrol, traffic crackdown, etc. as well as public health, sanitation and environmental control which are being performed by autonomous organization at present. However some expected controversial items may be summarized in the following 3 points on the premise of accepting the program of government. First, the point at issue related to the basic function of police. The basic function of police is generally understood as order keeping function such as anterior and preventive job and law enforcing function such as posterior and suppressing job. By the way, the program of government does not endow the autonomous police with investigation right for general crime, thereby raising the controversy that our autonomous police is nothing but the assistant of police. Furthermore, the present national police also expresses its dissatisfaction to the transfer of authority. Second, the issue of balance of security service between self-governing bodies may be raised. The security environment is different between self-governing bodies and thus demand of security is different. Therefore, the security service of autonomous police will reveal difference in qualitative aspect for each self-governing body. Moreover, it can be easily anticipated that the quality of security service may be different as per the financial independence degree. Third, the point at issue anticipated with the operation funded by the budget of self-governing body. As autonomous police is operated by the budget of self-governing body, the following problems may be raised; (1) since police administration is subordinated to general administration, the concentration may be weakened (2) the cooperation between policy agencies may be impeded (3) owing to the difficult in possessing spare police, the mobility of police may be somewhat reduced.

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