• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.128-132
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권2호
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• pp.120-131
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• 2007

A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.426-426
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• 2008

ZnO 박막과 Al이 도핑된 ZnO 다결정질 박막을 rf magnetron sputtering 방법을 이용하여 Si(100) 기판과 코닝글라스 기판에 증착하여 박막의 광학적 특성을 Spectro-scopic Ellipsometry (SE, Woollam사)와 UV-VIR-NIR Sphectrophotometry (SP, Varian사)를 사용하여 분석하였다. SE 측정은 입사각도 55도에서 75도까지 5도 간격으로 파장범위 250 - 1700 nm 에서 3 nm 간격으로 측정하였으며, SP 측정은 수직입사로 250-3000 nm 파장범위에서 1 nm 간격으로 투과도와 반사도를 측정하였다. 측정된 데이터들은 Lorentz Oscillator 모델과 Drude free electron 모델이 결합된 분산관계식을 사용하여 전산 맞춤을 하여 분석하였다. ZnO 박막의 optical band gap energy 는 3.3 eV로 측정되었으며, Al 도핑에 따른 자유전하농도가 증가에 의하여 Burstein-Moss 효과에 따르는 optical band gap energy의 증가 거동을 보였다. 또한 자유전하농도 증가에 따라 band edge 부근에서 나타나는 excitonic transition 에 기인하는 유전함수 피크의 broadening이 관찰되었으며, high frequency dielectric constant는 자유 전하농도에 관계없이 3.689${\pm}$0.05 eV 의 값을 가졌다. Drude free electron 모델을 사용하여 plasma frequency를 구하고 이로부터 얻어진 optical mobility 와 Hall mobility를 비교하여 ZnO계 다결정질 박막에서의 결정립계가 이동도에 미치는 영향을 고찰하고자 한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.323-324
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• 2009

We investigated the electrical properties of tris-isopropylsilylethynyl (TIPS)-pentacene organic thin-film transistors (OTFTs) employing Ni/Ag source/drain electrodes. The gap height between the gate insulator and S/D electrode was controlled by changing the thickness of Ag under-layer(20, 30, 40 and 50nm). After evaporating the Ni under-layer, TIPS pentacene channel material was dropping the gap between the gate insulator and SID electrodes. The electrical proprieties of OTFT such as filed-effect mobility, on/off ratio, threshold voltage and subthreshold slope were significantly influenced by the gap height.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.605-608
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• 2006

The recent application of wide band gap oxide semiconductors to transparent thin film transistors (TTFTs) is making a fast and growing (r)evolution on the contemporary solid-state electronics. In this paper we present some of the recent results we have obtained using wide band gap oxide semiconductors, like indium zinc oxide, produced by rf sputtering at room temperature. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above $10^6$ are achieved. The optical transmittance data in the visible range reveals average transmittance higher than 80 %, including the glass substrate. Channel mobilities are also quite respectable, with some devices presenting values around $25\;cm^2/Vs$, even without any annealing or other post deposition improvement processes. The high performances presented by these TTFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.

• 한국재료학회지
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• 제30권4호
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• pp.211-216
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• 2020

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors, because of their relatively low mobility, have limits in attempts to fulfill high-end specifications for display backplanes. In-Zn-O (IZO) is a promising semiconductor material for high mobility device applications with excellent transparency to visible light region and low temperature process capability. In this paper, the effects of working pressure on the physical and electrical properties of IZO films and thin film transistors are investigated. The working pressure is modulated from 2 mTorr to 5 mTorr, whereas the other process conditions are fixed. As the working pressure increases, the extracted optical band gap of IZO films gradually decreases. Absorption coefficient spectra indicate that subgap states increase at high working pressure. Furthermore, IZO film fabricated at low working pressure shows smoother surface morphology. As a result, IZO thin film transistors with optimum conditions exhibit excellent switching characteristics with high mobility (≥ 30㎠/Vs) and large on/off ratio.

• ETRI Journal
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• 제45권5호
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• pp.847-861
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• 2023

Dynamic object detection is essential for ensuring safe and reliable autonomous driving. Recently, light detection and ranging (LiDAR)-based object detection has been introduced and shown excellent performance on various benchmarks. Although LiDAR sensors have excellent accuracy in estimating distance, they lack texture or color information and have a lower resolution than conventional cameras. In addition, performance degradation occurs when a LiDAR-based object detection model is applied to different driving environments or when sensors from different LiDAR manufacturers are utilized owing to the domain gap phenomenon. To address these issues, a sensor-fusion-based object detection and classification method is proposed. The proposed method operates in real time, making it suitable for integration into autonomous vehicles. It performs well on our custom dataset and on publicly available datasets, demonstrating its effectiveness in real-world road environments. In addition, we will make available a novel three-dimensional moving object detection dataset called ETRI 3D MOD.

• 한국도로학회논문집
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• 제17권4호
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• pp.89-98
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• 2015

PURPOSES : This study evaluated the feasibility of implementing protected-permissive left-turn (PPLT) signals at three-leg signalized intersections. METHODS: A three-leg signalized intersection with permissive left-turn was first selected. A VISSIM simulation model was constructed using data collected from the test site. The VISSIM network was calibrated by adjusting related parameter values in order to minimize the difference between the simulated and surveyed critical gap. The calibrated network was validated by the number of waiting left-turning vehicles per cycle. Finally, the mobility and safety measures were extracted from simulation runs in which permissive, protected left turns as well as PPLTs were realized based on diverse traffic volume scenarios. RESULTS : The mobility-related measures of effectiveness (MOEs) of the case with PPLT outperformed the other two left-turn treatment scenarios. In particular, the average waiting time per cycle for the left-turn vehicles in the case with PPLT was reduced by 30 s. The safety-related MOEs of the case with PPLT were somewhat higher than those in the case with protected left-turns and much higher than those in the case with permissive left-turns. CONCLUSIONS : Based on the mobility- and safety-related MOEs generated from the VISSIM simulation runs, the use of PPLT seems to be feasible at three-leg signalized intersections where the left-turn is permissive and a pedestrian signal exists at the conflicting approach. However, in order to use the PPLT in earnest, it is necessary to revise the road traffic act, traffic signs, and related manuals.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.816-819
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• 1992

Binary compound semiconductor InSb crystal which has direct-transition energy gap (0.17 ev) grown by vertical Bridgman method, then the electric-magnetic and optical properties of InSb crystal were surveyed. The growth rate of the crystals was 1mm/hr and the lattice constant $a_\circ$ of the grown crystal was 6.4863$\AA$. The electrical properties were examined by the Hall effect measurement with the van der Pauw method in the temperature range of 70$\sim$300K, magnetic field range of 500$\sim$10000 gauss. The undoped InSb crystal was n-type, the concentration and the electron mobility were 2$\sim$6 ${\times}$ $10^{16}$$\textrm{cm}^{-3}$ and carrier mobility was 6$\sim$2${\times}$$10^{4}$$cm^{2}$/v.sec at 300K, respectively. The carrier mobility was decreased with $T^{-1/2}$ due to the lattice scattering above 100K, and decreased by impurity scattering below100K. The magnetoresistance was increased 190% at 9000 gauss as compared with non-appliced magnetic field and the magnetoresistance was increased with increasing the magnetic field. Also, the Hall voltage was increased with increasing the magnetic field and decreasing the thickness of sample. The optical energy band gap of InSb at room temperature determined using the IR spectrometer was 0.167eV. The diffusion depth of Zn into InSb proportionally increased with the square root of diffusion time and the activation energy for Zn diffusion was 0.67eV. The temperature dependence of diffusion coefficient was $D=4.25{\times}10^{-3}$exp (-0.67/$K_BT$).

• 한국전기전자재료학회논문지
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• 제37권3호
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• pp.253-260
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• 2024

In this study, ITO thin films were fabricated on a glass substrate at different thicknesses without introducing oxygen using RF sputtering system. The structural, electrical, and optical properties were evaluated at various thicknesses ranging from 50 to 300 mm. As the thickness of deposited ITO thin film become thicker from 50 to 100 mm, carrier concentration, mobility, and band gap energy also increased while the resistivity and transmittance decreased in the visible light region. When the film thickness increased from 100 to 300 mm, the carrier concentration, mobility, and band gap energy decreased while the resistivity and transmittance increased. The optimum electrical properties were obtained for the ITO film 100 nm. After optimizing the thickness, the ITO thin films were post-annealed at different temperatures ranging from 100 to 300℃. As the annealing temperature increased, the ITO crystal phase became clearer and the grain size also increased. In particular, the ITO thin film annealed at 300℃ indicated high carrier concentration (4.32 × 10²¹ cm^-3), mobility (9.01 cm²/V·s) and low resistivity (6.22 × 10^-4 Ω·cm). This means that the optimal post-annealing temperature is 300℃ and this ITO thin film is suitable for use in solar cells and display application.