• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.35-38
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• 2000

In this study, the rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.l8um semiconductor device. Through reverse moat pattern process, reduced moat density at high moat density, STI CMP process with low selectivity could be to fit polish uniformity between low moat density and high moat density. Because this reason, in-situ motor current end point detection method is not fit to the current EPD technology with the reverse moat pattern. But we use HSS without reverse moat pattern on STI CMP and take end point current sensing signal.[1] To analyze sensing signal and test extracted signal, we can to adjust wafer difference within $110{\AA}$.

• Journal of architectural history
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• v.32 no.3
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• pp.21-30
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• 2023

The Wolseong Wooden moat is a unique example. Which is a vertical wall made of wood. It shows a changing point how to make the wall by digging a hole and stacking stones vertically. This study tried to to make a assumption about the construction process of the wooden structure found in the Wolseong pit moat. I sorted out wooden elements and then analyzing these features and compared with the results of the excavation. After I made 3D modelling in the order to it was made. This moat is not only a function of digging up the ground to trap water, but also a technique of building structures to maintain walls. It is a valuable material that can show the woodworking engineering techniques of the Silla Dynasty.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.14-17
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• 2000

The rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.18um semiconductor device. To employ in STI CMP, the reverse moat process has been added thus the process became complex and the defects were seriously increased. Removal rates of each thin films in STi CMP was not equal hence the devices must to be effected, that is, the damage was occured in the device dimension in the case of excessive CMP process and the nitride film was remained on the device dimension in the case of insufficient CMP process than these defects affect the device characteristics. We studied the current sensing method in STI-CMP with the reverse moat pattern.

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.5
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• pp.262-267
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• 2002

In this paper, we first studied the factors affecting the motor current (MC) signal, which was strongly affected by the systematic hardware noises depending on polishing such as pad conditioning and arm oscillation of platen and recipe, head motor. Next, we studied the end point detection (EPD) for the chemical mechanical polishing (CMP) process of shallow trench isolation (STI) with reverse moat structure. The MC signal showed a high amplitude peak in the fore part caused by the reverse meal. pattern. We also found that the EP could not be detected properly and reproducibly due to the pad conditioning effect, especially when conventional low selectivity slurry was used. Even when there was no pad conditioning effect, the EPD method could not be applied, since the measured end points were always the same due to the characteristics of the reverse moat structure with an open nitride layer.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.10
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• pp.2509-2515
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• 2014

In this paper, the conventional vertical structure for VLSI circuits CMOS intend to improve the stress effects of active region and built-in threshold voltage. For these improvement, the proposed structure is shallow trench isolation of moat shape. We want to analysis the electron concentration distribution, gate bias vs energy band, thermal stress and dielectric enhanced field of thermal damage between vertical structure and proposed moat shape. Physically based models are the ambient and stress bias conditions of TCAD tool. As an analysis results, shallow trench structure were intended to be electric functions of passive as device dimensions shrink, the electrical characteristics influence of proposed STI structures on the transistor applications become stronger the potential difference electric field and saturation threshold voltage, are decreased the stress effects of active region. The fabricated device of based on analysis results data were the almost same characteristics of simulation results data.

• Earthquakes and Structures
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• v.23 no.1
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• pp.87-100
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• 2022

Limiting the displacement of seismic isolators causes a pounding phenomenon under severe earthquakes. Therefore, the ASCE 7-16 has provided minimum criteria for the design of the isolated building. In this research the seismic response of isolated buildings by Triple Friction Pendulum Isolator (TFPI) under the impact, expected, and unexpected mass eccentricity was evaluated. Also, the effect of different design parameters on the seismic behavior of structural and nonstructural elements was found. For this, a special steel moment frame structure with a surrounding moat wall was designed according to the criteria, by considering different response modification coefficients (RI), and 20% mass eccentricity in one direction. Then, different values of these parameters and the damping of the base isolation were evaluated. The results show that the structural elements have acceptable behavior after impact, but the nonstructural components are placed in a moderate damage range after impact and the used improved methods could not ameliorate the level of damage. The reduction in the RI and the enhancement of the isolator's damping are beneficial up to a certain point for improving the seismic response after impact. The moat wall reduces torque and maximum absolute acceleration (MAA) due to unexpected enhancement of mass eccentricity. However, drifts of some stories increase. Also, the difference between the response of story drift by expected and unexpected mass eccentricity is less. This indicates that the minimum requirement displacement according to ASCE 7-16 criteria lead to acceptable results under the unexpected enhancement of mass eccentricity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.838-843
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• 2002

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The reverse moat etch process has been used for the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process with conventional low selectivity slurries. Thus, the process became more complex, and the defects were seriously increased. In this paper, we studied the direct STI-CMP process without reverse moat etch step using high selectivity slurry(HSS). As our experimental results show, it was possible to achieve a global planarization without the complicated reverse moat process, the STI-CMP process could be dramatically simplified, and the defect level was reduced. Therefore the throughput, yield, and stability in the ULSI semiconductor device fabrication could be greatly improved.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.1
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• pp.28-32
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• 2003

In this paper, we have studied the in-situ end point detection (EPD) for direct chemical mechanical polishing (CMP) of shallow trench isolation (STI) structures without the reverse moat etch process. In this case, we applied a high selectivity $1n (HSS) that improves the silicon oxide removal rate and maximizes oxide to nitride selectivity Quite reproducible EPD results were obtained, and the wafer-to-wafer thickness variation was significantly reduced compared with the conventional predetermined polishing time method without EPD. Therefore, it is possible to achieve a global planarization without the complicated reverse moat etch process. As a result, the STI-CMP process can be simplified and improved using the new EPD method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.90-93
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• 2000

In this study, the rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.18um semiconductor device. To employ in STI CMP, the reverse moat process has been added thus the process became complex and the defects were seriously increased. Removal rates of each thin films in STI CMP was not equal hence the devices must to be effected, that is, the damage was occured in the device dimension in the case of excessive CMP process and the nitride film was remained on the device dimension in the case of insufficient CMP process than these defects affect the device characteristics. To resolve these problems, the development of slurry for CMP with high removal rate and high selectivity between each thin films was studied then it can be prevent the reasons of many defects by reasons of many defects by simplification of process that directly apply CMP process to STI structure without the reverse moat pattern process.

• Journal of the Korean Institute of Traditional Landscape Architecture
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• v.35 no.1
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• pp.25-35
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• 2017

The purpose of this study is to re-exam of the modern values of a moat to utilize it with various functions such as a military defense on the outskirts of the castle, dividing the space by its boundary, controlling the micro-climate in the worsening modern environment with temperature rise due to climate change and habitat reduction of animals, and providing the habitat of animals to modern urban space, etc. The scope of the study is focusing on the castles with the moat installed to prevent the enemy from accessing directly to the wall using a pond or water path for military defense on the outskirts of the castle or to divide it into boundaries. In the Orient, the Nakan Eupseong, Haemi Eupseong, Gyeongju Wolseong in Korea and the Forbidden City in China, and Nijo Castle and Osaka Castle in Japan were selected. In the West, Edinburgh Castle in Britain, Blois Castle in France, Chillon Castle in Switzerland, and Frederiksborg Castle in Denmark were selected for the study. As a research method, literature research and field research were conducted. For the Orient, it was conducted in parallel with the literature research and field research. For the western, it was mainly conducted with literature research. For the literature research, the origin of the moat, the concept of the moat, the function of the moat, the history and culture of the western moat are based on the data from the related institutions and previous studies. For the Orient field research, exploring was conducted in two to three times from Jan. 2016 to Dec. 2016 in each of the target areas of Nakan Eupseong, Haemi Eupseong, Gyeongju Wolseong in Korea and the Forbidden City in China, and Nijo Castle and Osaka Castle in Japan. The contents of the research were analyzed through interviews, photographs, measurements, and observations on the function, size, and characteristics of the moat of each target. The results of this study are as follows. The moat was a structure installed to set a boundary for military defense facilities on the outskirts of a castle and it played an important role as a part of the city in the ancient times of Asia and the West through the Middle Ages. The role of the moat is gradually disappearing due to the disappearance of the purpose of military defense. However, moats are excluded from modern landscape planning, despite the fact that a moat filled with water is a hydrophilic space with great historical and cultural value such as various cultural activities and providing habitats for animals. By reflecting on the moats various functions in modern cities and utilizing it, it is expected to be utilized to bring pleasant air into the city where the circulation of air is blocked and energize the city as a hydroponic element.