• Journal of the Semiconductor & Display Technology
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• 제10권1호
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• pp.63-73
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• 2011

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with conventional pseudomorphic HEMTs (PHEMTs). For the optimized device design and development, we have performed the calibration on the DC characteristics of our fabricated 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure on the GaAs wafer using the hydrodynamic transport model of a commercial 2D ISE-DESSIS device simulator. The well-calibrated device simulation shows very good agreement with the DC characteristic of the 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.

• The Transactions of the Korean Institute of Electrical Engineers C
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• 제49권11호
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• pp.627-634
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• 2000

In this paper, new micromachined tunble bandpass filters for multi-band millimeter-wave telecommunication systems are proposed. Two types of mm-wave tunable filters are fabricated using micromachning technology and the responses of the filters are measured. One is two-pole lumped elements filter and the other two-pole resonators filter. Frequency tunability of the filter is achieved by changing the gap between a common CPW ground plate and the movable cantilever beam connected to the transmission line with the controllable renge of 2.5${\mu}m$. The deflection of cantilever beam is measured with the applied DC voltage. With the applied bias voltage from 0 to 50 V, the fabricated filters show 0.6 GHz(2.3%) at 26.6 GHz, and 0.8 GHz(2.5%) at 32 GHz center frequency shift for the lumped elements and resonators filter, respectively. The life time of the fabricated gold cantilever structure are tested.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• 제12권1호
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• pp.27-36
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• 2001

In this paper, micromachined millimeter-wave cavity resonators ar presented. One-port and two-port cavity resonators at Ka-band are designed using 3D design software, HP $HFSS^{TM}$ ver. 5.5 Cavity resonators are fabricated on Si substrate, which is etched down for the cavity, bonded with a Quartz wafer in which metal patterns for the feeding line coupling slot are formed. One-port resonator shows the resonant frequency of 39.34 GHz, the return loss of 14.5 dB, and the loaded $Q(Q_{L})$ of 150. Two-port cavity resonator shows the resonant frequency of 39 GHz, the insertion and return losses of 4.6dB and 19,9dB, the loaded($Q_{L}$) and unloaded $Q(Q_{U})$) of 44.3 and 107, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• 제24권7호
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• pp.722-729
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• 2013

This paper presents the influence on the transmission characteristics of dimensional tolerances of rectangular waveguides usually used as a low-loss transmission line in the millimeter-wave band. We derived the Green's functions of the waveguide with eigenfunction expansion method. The reflection coefficient of the waveguide with a post is calculated by using internal impedance in order to investigate the influence of dimensional tolerances of the waveguide. In order to check the validity of the theoretical analysis, the calculated reflection coefficients are compared with the measured results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제11권12호
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• pp.1070-1078
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• 1998

A density of phonon is increased by application of electric field. At this time the phonon which has higher energy than around is called hot phonon is disappeared after 7 picosecond by scattering with electron and loss energy. Since the lifetime of phonon is very short, the effects of hot phonon can be neglected in the low speed semiconductor device, but it must be considered in high speed devices. DC and AC electric fields are applied to bulk GaAs, and the density of phonon is obtained and analyzed for its effects on electron velocity and electron distribution using Monte Carlo simulation method. Under high electric filed the density of hot phonon increased and energy of hot phonon is decreased by scattering with electron on the other hand the energy of electron is increased. Therefore electron move from central valley of conduntion band to satellite vallies and the valocity of electron decrease since the mass of electron in satellite vally is heavier than central vally. In millimeter wave frequencies, the effects of hot phonon increased at higher frequencies.

• Proceedings of the KIEE Conference
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• 대한전기학회 1999년도 하계학술대회 논문집 G
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• pp.3271-3273
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• 1999

In this paper, new micromachined tunable bandpass filters for multi-band millimeter-wave telecommunication systems are proposed. Two types of mm-wave tunable filters are fabricated using micromachining technology and the responses of the filters are measured. One is two-pole lumped elements filter and the other two-pole resonators filter. Frequency tunability of the filter is achieved by changing the gap between a common CPW ground plate and the movable cantilever beam connected to the transmission line with the controllable range of 2.5 ${\mu}m$. The deflection of cantilever beam is measured with the applied DC voltage. With the applied bias voltage from 0 to 50 V, the fabricated filters show 0.6 GHz(2.3 %) at 26.6 GHz, and 0.8 GHz(2.5%) at 32 GHz center frequency shift for the lumped elements and resonators filter, respectively.

• Journal of Sensor Science and Technology
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• 제25권1호
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• pp.8-12
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• 2016

A planar, light-weight, and low-cost notch filter structure is required for the KSTAR ECEI (Electron Cyclotron Emission Imaging) system to protect the mixer arrays from spurious plasma heating power. Without protection, this heating power can significantly degrade or damage the performance of the mixer array. To protect mixer arrays, a frequency selective surface (FSS) structure is the suitable choice as a notch filter to reject the spurious heating power. The FSS notch filter should be located between the lenses of the ECEI system. This paper presents a 170 GHz FSS notch filter for the KSTAR ECEI sensor application. The design of such an FSS notch filter is based on the single-sided square loop geometry, because that makes it relatively insensitive to the incident angle of incoming wave. The FSS notch filter exhibits high notch rejection with low pass-band insertion loss over a wide range of incident angles. This paper also reviews the simulated and measured results. The proposed FSS notch filter might be implemented in other millimeter-wave plasma devices.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• 제24권3호
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• pp.253-258
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• 2013

In this paper, a free-space material measurement technique is discussed in W-band(75~110 GHz). For the accurate measurement of S-parameters of an MUT(Material Under Test) in free space, a W-band quasi-optical free-space material measurement system, less affected by the measurement environments, is discussed, and GRL(Gated Reflect Line) method for calibrating the measurement system is described. Proposed technique is verified for 'Air' and measurement results for arystal plates of thickness 1.1 mm, 2 mm, 2.75 mm and 5 mm are also shown.

• Proceedings of the IEEK Conference
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• 대한전자공학회 2002년도 ITC-CSCC -2
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• pp.1054-1057
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• 2002

The design and fabrication of Q-band 3-stage monolithic microwave integrated circuit(MMIC) amplifier for WLAN are presented using 0.2$\square$ AIGaAs/lnGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT). In each stage of the MMIC, a negative feedback is used for both broadband and good stability. The measurement results are achieved as an input return loss under -4dB, an output return loss under -10dB, a gain of 14dB, and a PldB of 17dBm at Q-band(36～44GHz). These results closely match with design results. The chip size is 2.8${\times}$1.3mm$^2$. This MMIC amplifier will be used as the unit cell to develop millimeter-wave transmitters for use in wideband wireless LAN systems.

• ETRI Journal
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• 제42권2호
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• pp.163-174
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• 2020

Numerous wearable technology companies have recently developed several headmounted display (HMD) products for virtual reality (VR) services. 5G wireless networks aim at providing high-quality 3D multimedia services such as VR, augmented reality, and mixed reality. In this study, we examine the application of millimeter-wave (mmWave) technology to realize low-latency wireless communication between an HMD and its content server. However, the propagation characteristics of mmWave present several challenges such as the deafness, blockage, and beam alignment problems, and interference among content servers. In this study, we focus on an environment that provides VR services in the mmWave band and introduce existing techniques for addressing such challenges. In addition, we employ a commercialized IEEE 802.11ad VR dongle to measure the actual data rate of an mmWave VR application and identify the degree to which the performance deteriorates when the above problems occur. Finally, we verify the feasibility of the proposed solutions through a simulation of several VR scenarios in the mmWave band.