• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.10
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• pp.65-70
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• 2008

We design and fabricate the 94 GHz Coplanar waveguide(CPW)-to-rectangular waveguide transition that is transmits signal smoothly between the CPW, which is a popular transmission line of the planar circuits, and rectangular waveguide for the 94 GHz transceiver system. The proposed transition composed of the unilateral fin-line taper and open type CPW-to-slot-line transition is based on the hard and inflexible sapphire for the flip-chip bonding of the planar MMICs using conventional MMIC technology. We optimize a single section transition to achieve low loss by using an EM field solver of Ansoft's HFSS and fabricate the back- to-back transition that is measured by Anritsu ME7808A Vector Network Analyzer in a frequency range of $85{\sim}105$ GHz. From the measurement and do-embedding CPW with 3 mm length, an insertion and return loss of a single-section transition are 1.7 dB and more an 25 than at 94 GHz, respectively.

• ETRI Journal
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• v.45 no.2
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• pp.338-345
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• 2023

A filtering power divider based on air-filled substrate-integrated waveguide (AFSIW) technology is proposed in this study. The AFSIW structure is used in the proposed filtering power divider for substantially reducing the transmission losses. This structure occupies a large area because of the use of air as a dielectric instead of typical dielectric materials. A filtering power divider provides power division and frequency selectivity simultaneously in a single device. The proposed filtering power divider comprises three AFSIW cavities. The filtering function is achieved using symmetrical inductive posts. The input and output ports of the proposed circuit are realized by directly connecting coaxial lines to the AFSIW cavities. This transition from the coaxial line to the AFSIW cavity eliminates the additional transitions, such as AFSIW-SIW and SIW-conductor-backed coplanar waveguide, applied in existing AFSIW circuits. The proposed power divider with a second-order bandpass filtering response is fabricated and measured at 5.5 GHz. The measurement results show that this circuit has a minimum insertion loss of 1 dB, 3-dB fractional bandwidth of 11.2%, and return loss exceeding 11 dB.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.4
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• pp.40-46
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• 1998

Leakage phenomena of flip-chip structures on common GaAs and alumina main substrates are characterized using the spectral domain approach to reduce the possible chip-to-chip crosstald and transmission resonance. We have found taht the longitudinal section magnetic mode is dominant for the coplanar waveguide leakage andthe leakage can be suppreassed by properly managing the gap height and the main substrate thickness in addition to the dielectric constant. These calculation results will be helpful for designing and flip-chip packagaing of high-frequency integrated circuits.

• ETRI Journal
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• v.33 no.5
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• pp.818-821
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• 2011

A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a $180^{\circ}$ power divider structure consisting of a Lange coupler followed by a ${\lambda}$/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.

• Journal of Astronomy and Space Sciences
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• v.27 no.3
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• pp.239-244
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• 2010

A simulation for the design of a $90^{\circ}$ differential phase shifter aimed toward Korean VLBI Network (KVN) 129 GHz band polarizer is described in this paper. A dual-circular polarizer for KVN 129 GHz band consists of a $90^{\circ}$ differential phase shifter and an orthomode transducer. The differential phase shifter is made up of a square waveguide with two opposite walls loaded with corrugations. Three-dimensional electromagnetic simulation has been performed to predict the $90^{\circ}$ differential phase shifter's characteristics. The simulation for the differential phase shifter shows that the phase shift is $90^{\circ}{\pm}3.3^{\circ}$ across 108-160 GHz and the return losses of two orthogonal modes are better than -30 dB within the design frequency band. According to the simulation results the calculated performance is quite encouraging for KVN 129 GHz band application.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.7 s.361
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• pp.105-111
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• 2007

In this paper, we designed and fabricated a 3-dB tandem coupler using air-bridge technology for millimeter-wane monolithic integrated circuits, operating at W-band($75{\sim}110\;GHz$) frequency. Tightly edge-coupled CPW line has low directivity due to different even-mode and odd-mode phase velocity. To overcome this disadvantage, a 3-dB tandem coupler which comprises the two-sectional weakly parallel-coupled lines with equal phase velocity was designed at W-band. The proposed coupler was fabricated using air-bridge technology to monolithically materialize the uniplanar coupler structure instead of conventional multilayer or wire bonded structure. From the measurements, the coupling coefficient of $2.9{\sim}3.6\;dB$ and the good phase difference of $91.2{\pm}2.9^{\circ}$ were obtained in broad frequency range of $75{\sim}100\;GHz$.

• 한국정보통신설비학회:학술대회논문집
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• 2002.08a
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• pp.21-23
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• 2002

In millimeter wave applications, it is often necessary to use transitions between waveguide and planar circuits. Finline structures can be used effectively to this purpose. In multilayered case, it is necessary to analyze the structure with numerical method such as spectral domain immittance method. The design procedure uses tile cutoff frequency for each taper width. The dispersion data in a single layer are compared with those in literature. The performance of the designed finline taper is verified with the FEM simulation using HFSS.

• Journal of Astronomy and Space Sciences
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• v.30 no.4
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• pp.345-353
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• 2013

A W-band Orthomode Transducer (OMT) has been developed for Korean VLBI Network (KVN) polarization observation. The OMT design was based on E-plane split-block technique using septum structure. 3-dimensional electromagnetic simulation was fully employed to optimize the performance of the OMT. Measurements of the fabricated OMT show that the return losses for the vertically and horizontally polarized modes are better than -20 dB across 80 ~ 108 GHz and the insertion losses for the both modes are less than 0.47 dB. The cross-polarization level of the OMT is less than -30 dB. The bandwidth of the developed OMT is estimated as around 30%.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.11
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• pp.40-46
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• 2002

A MEMS(Micro Electro Mechanical System) package using a doped-silicon(Si) carrier for coplanar microwave and millimeter-wave integrated circuits is proposed in order to reduce parasitic problems of leakage, coupling and resonance. The proposed carrier scheme is verified by fabrication and measuring a GaAs CPW(Coplanar Waveguide) on the three types of Si-carriers(gold-plated high resistivity, lightly doped, high resistivity). The proposed MEMS package using the lightly doped(15 ${\Omega}{\cdot}$) Si-carrier shows parasitic-free performance since the lossy Si-carrier effectively absorbs and suppresses the resonant leakage.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.3
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• pp.271-277
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• 2004

A Si(Silicon) MEMS(Micro Electro Mechanical System) package using a doped lossy Si carrier for CPW(Coplanar Waveguide) MMICs(Microwave and Millimeter-wave Integrated Circuits) is proposed in order to reduce parasitic problems of leakage, coupling and resonance. The proposed chip-carrier scheme is verified by fabricating and measuring a GaAs CPW on the two types of carriers(conductor-back metal, doped lossy Si) in the frequency from 0.5 to 40 ㎓. The proposed MEMS package using the lightly doped lossy(15 Ω$.$cm) Si chip-carrier and the HRS(High Resistivity Silicon, 15 ㏀$.$cm) shows the optimized loss and parasitic problems-free since the doped lossy Si-carrier effectively absorbs and suppresses the resonant leakage. The Si MEMS package for CPW MMICs has an insertion loss of only - 2.0 ㏈ and a power loss of - 7.5 ㏈ at 40 ㎓.