• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1061-1067
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• 2004

In this study, ferroelectric (Ba,Sr)TiO$_3$ and high temperature superconductor YBCO thin films were fabricated by PLD (Pulsed Laser Deposition) method and tuneable bandstop filters were implemented with two different IDC(Interdigital Capacitance) gap patterns, 20${\mu}{\textrm}{m}$ and 30${\mu}{\textrm}{m}$ using these two thin film layers. The resonant frequency was changed by DC bias voltage. By comparing measured results with simulation, the dielectric properties of ferroelectric thin film have been extracted. The permittivity was 820 ～ 900 at 30 K and had an acceptable error range but the loss tangent had a great difference, 0.018 in 30${\mu}{\textrm}{m}$ IDC gap pattern and 0.037 in 20 ${\mu}{\textrm}{m}$.

• Journal of Electrical Engineering and information Science
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• v.2 no.4
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• pp.72-78
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• 1997

A free space transmission method using standard gain horn antennas in the frequency range from 9.0 to 10.5GHz is applied to determine the dielectric properties of grain such as rough rice ,brown rice and barley. The dielectric constant and loss factor, which depend on the moisture content of the wetted grain are obtained from the measured attenuation and phase shift by vector network analyzer. The moisture content of grain varied from 11 to 25% based on this wetted condition. The measured values of dielectric constants as a function of moisture density are compared with values of those obtained using he predicted model for estimating dielectric constants of grain. The effect of density fluctuation, high is an important parameter governing the dielectric properties of grain, on the dielectric constant and loss factor is presented. A new density-independent model in terms of measured attenuation an moisture density is proposed of reducing the effects of density fluctuation on the moisture content measurement.

• Journal of the Korean Society for Heat Treatment
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• v.34 no.2
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• pp.75-80
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• 2021

The crystal grains of polycrystalline diamond vary depending on deposition conditions and growth thickness. The diamond thin film deposited by the CVD method has a very rough growth surface. On average, the surface roughness of a diamond thin film deposited by CVD is in the range of 1-100 um. However, the high surface roughness of diamond is unsuitable for application in industrial applications, so the surface roughness must be lowered. As the surface roughness decreases, the scattering of incident light is reduced, the heat conduction is improved, the mechanical surface friction coefficient can be lowered, and the transmittance can also be improved. In addition, diamond-coated cutting tools have the advantage of enabling ultra-precise machining. In this study, the surface roughness of diamond was improved by thermal diffusion reaction between diamond carbon atoms and ferrous metals at high temperature for diamond thin films deposited by MPCVD.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.408-412
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• 1987

The designing method of the reflection and the loaded-line phase shifter is presented. Its phase shift is variable with changing of the stub parameters. In this paper, we design the 2-bit phase shifter which have 10\ulcornerand 90\ulcornerbit phase shift and analysi its characteristics. The experiments show 2d B max.insertion loss, 2.0max. input VSWR and 6\ulcornerphase error on 2.9-3.1GHz frequency range. They agree well with the theoretical results.

• Journal of the Korean Ceramic Society
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• v.35 no.3
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• pp.280-286
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• 1998

LaAlO3 Single crystals used as a substrate for thin film depositions of a high temperature oxide su-perconductor YB2Cu3O7 and applied to microwave frequencies were grown by the Traveling Solvent Flati-ing Zone (TSFZ) method and characterized. For the growth of LaAlO3 single crystals polycrystalline fe-edrods were prepared from powder mixture of La2O3 and Al2O3 with a mole ratio of 1:1 calcined at 110$0^{\circ}C$ for 3h and sintered at 140$0^{\circ}C$ for 4h The growth LaAlO3 crystals was 4-5mm in diameter 30mm in length and dark brown. The growth rate was 2-3mm/h and the rotation speeds were 10rpm for an upper ro-tation and 40 rpm for a lower rotation The growing crystals and the feedrods were counter-rotated. The orientation of the grown single crystals of LaAlO3 was identified to be [111] direction. Dielectric constants were measured to be 30-33 between 100 kHz and 1 MHz in the 30$0^{\circ}C$ to 45$0^{\circ}C$ temperature range and 102 in a range of 100 kHz at the phase transformation temperature of 522$^{\circ}C$ Dielectric losses were calculated to be 1.8$\times$10-4 at the room temperature and 5.7$\times$10-3 at the phase transformation temperature. Lattice con-stants of the grown crystlals were determined to be aR=5.3806 $\AA$ and $\alpha$=60.043$^{\circ}$ by the least square method.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.3
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• pp.556-560
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• 2007

In this study, both structural and microwave dielectric properties of the $Mg_5B_4O_{15}$ (B=Ta, Nb) cation-deficient perovskite ceramics with sintering temperature were investigated. All sample of the $Mg_5B_4O_{15}$ (B=Ta, Nb) ceramics were prepared by the conventional mixed oxide method and sintered at $1400^{\circ}C{\sim}1500^{\circ}C$. The bulk density and quality factor of the $Mg_5B_4O_{15}$ (B=Ta, Nb) ceramics were increased with increasing sinterning temperature in the range of $1400^{\circ}C{\sim}1450^{\circ}C$, but these were decreased the sintering temperature of above $1450^{\circ}C$. The dielectric constant of the $Mg_5Ta_4O_{15}$ ceramics was increased continuously with increasing sintering temperature. And the dielectric constant of the $Mg_5Nb_4O_{15}$ ceramics was increased in as the sintering temperature increasesfrom $1400^{\circ}C{\sim}1450^{\circ}C$ but was decreased at the temperatures above $1475^{\circ}C$. In the case of the $Mg_5Ta_4O_{15}\;and\;Mg_5Nb_4O_{15}$ ceramics sintered at $1450^{\circ}C$ for 5h, the dielectric constant, quality factor, and temperature coefficient of the resonant frequency (TCRF) were 8.2, 259,473 GHz, $-10.91ppm/^{\circ}C$ and 14, 37,350 GHz, $-52.3ppm/^{\circ}C$, respectively.

• Journal of the Korean Magnetics Society
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• v.9 no.1
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• pp.7-16
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• 1999

Stoichiometric and nonstoichiometric $Y_{3-x}Fe_{5+x}O_{12})$ polycrystalline samples (x=0.00, 0.05, 0.10, 0.30, -0.05, -0.10, -0.30) were prepared by solid state reaction method. The magnetic properties of the sample were investigated by FMR (ferromagnetic resonance) technique at microwave frequency 5.11 GHz (G-band) and 23.39 GHz (K-band) respectively. The spectroscopic splitting factor g were estimated to be 2.04~2.35 from the derivative absorption lines. As the samples became yttrium $(Y^{3+})$ excess and iron $(Fe^{3+})$ excess, Magnetizations were decreased. But resonance linewidth were increased. To investigate the anisotropy, the angular dependence of resonance magnetic fields were measured. Angular dependence of effective magnetizations were measured by FMR from 77 K to 300 K at K-band microwave frequency (23.39 GHz) and the saturation magnetizations were measured by VSM. The Bloch coefficients B and C were determined by fitting. $M_{eff}(0)$ was obtained by the extrapolation from 80 K. From this result, the spin wave stiffness constant D $(about\; 162~206 \;eV{\AA}^2)$and average square range of exchange interaction $$$(about \;5.84~12.13\;{\AA}^2)$ were determined.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.352-359
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• 2017

The growth of nanocrystalline diamond films on a p-type poly silicon substrate was studied using microwave plasma chemical vapor deposition method. A 6 mm thick poly silicon plate was mirror polished and scratched in an ultrasonic bath containing slurries made of 30 cc ethanol and 1 gram of diamond powders having different sizes between 5 and 200 nm. Upon diamond deposition, the specimen scratched in a slurry with the smallest size of diamond powder exhibited the highest diamond particle density and, in turn, fastest diamond film growth rate. Diamond deposition was carried out applying different DC bias voltages (0, -50, -100, -150, -200 V) to the substrate. In the early stage of diamond deposition up to 2 h, the effect of voltage bias was not prominent probably because the diamond nucleation was retarded by ion bombardment onto the substrate. After 4 h of deposition, the film growth rate increased with the modest bias of -100 V and -150 V. With a bigger bias condition(-200 V), the growth rate decreased possibly due to the excessive ion bombardment on the substrate. The film grown under -150V bias exhibited the lowest contact angle and the highest surface roughness, which implied the most hydrophilic surface among the prepared samples. The film growth rate increased with the apparent activation energy of 21.04 kJ/mol as the deposition temperature increased in the range of $300{\sim}600^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.148-148
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• 2012

A cutoff probe is the novel diagnostic method to get the absolute plasma density with simple system and less assumption. However, high density of ion flux from plasma on probe tip can make the error of plasma density measurement because the dielectric material of probe tip can be damaged by ion flux. We proposed a shielded cutoff probe using the ceramic tube for protection from ion flux. The ceramic tube on probe tip can intercept the ion flux from plasma. The transmitted spectrum using the shielded cutoff probe is good agreement with E/M wave simulation result (CST Microwave Studio) and previous circuit simulation of cutoff probe [1]. From the analysis of the measured transmitted spectrum base on the circuit modeling, the parallel resonance frequency is same as the unshielded cutoff probe case. The obtained results of electron density is presented and discussed in wide range of experimental conditions, together with comparison result with previous cutoff method.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.7
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• pp.13-20
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• 1989

An accurate design method for rectangular microstrip patch antenna that can be applied to wide range of frequencies (C-band to X-band) is proposed. With due regard the frequency dependent effective dielectric permittivity to design formula, the inaccuracy of previous design formulae can be overcome. The results predicted by new procedure are compared well experimental results that had varying operation frequencies between 7GHz and 15GHz. Antennas are fabricated over microwave substrates with the same dielectric permittivity and thickness. Radiation power patterns are also measured and they well with theoretical values.