• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.321-324
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• 2003

The effects of various sintering additives such as $Bi_2O_3+V_2O_5$, $BiVO_4$, $B_2O_3$, and $CuO+V_2O_5$ on the low-temperature sintering and microwave dielectric properties of $(ZnMg)TiO_3$ system were studied. Sintering was enhanced by the sintering additives and highly dense samples were obtained for $(Zn_{0.8}Mg_{0.2})TiO_3$ at the sintering temperature of $910^{\circ}C$. $(Zn_{0.8}Mg_{0.2})TiO_3$ with 6.19 mol.%$B_2O_3$ was found to show the best sintering and microwave dielectric properties.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.900-905
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• 1996

We have investigated dielectric properties of low fired ceramics BiNbO$_{4}$ containing 0.05[wt%] V$_{2}$O$_{5}$ and x[wt%l Cr$_{2}$O$_{3}$ (x=0, 0.2, 0.4, 0.8, 1.2). By substituting Cr for Bi, dielectric constant .epsilon.$_{r}$ and quality factor Q.f increased and temperature coefficient of resonant frecquency .tau.$_{f}$ changed to positive value. In the composition of BiNbO$_{4}$+0.05 [Wt%] V$_{2}$O$_{5}$+0.8[wt%]Cr$_{2}$O$_{3}$ sintered at 960[.deg. C], we could obtain microwave dielectric properties of .epsilon.$_{r}$=49, Q.f.simeq.3000[GHz](at 4.8[GHz]), .tau.$_{f}$.simeq.0[ppm/.deg. C]. As the above ceramics can be sintered near 960[.deg. C], it is applicable to multilayer microwave device with Ag conductor.tor.tor.tor.

• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.590-598
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• 1999

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.1
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• pp.81-85
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• 1996

Microwave dielectric properties of 0.15(B $a_{x}$S $r_{0.05}$)O-0.15(S $m_{2}$(1-y)N $d_{2y}$) $O_{3}$-0.7Ti $o_{2}$(x=o.9~0.1[mol.], y=6[m/o]) ceramics were investigated with BaO compositional ratio. Sintered density and resistivity of specimens were independent on the BaO compositional ratio. In the specimen with x=0.975[mol.], dielectric constant, quality factor and temperature coefficient of resonant frequency had good values of 76.52, 3001(at 3[GHz]) and +0.71[ppm/.ceg. C], respectively. By comparing with the stoichiometric compositions of 78.14, 2938(at 3[GHz])+14.19[ppm/.ceg. C], dielectric constant and quality factor showed similar properties, but the temperature coefficient of resonant frequency was highly improved. (author). refs., figs., tabs.s.s.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.448-454
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• 1995

The effect of WO3 addition on microwave dielectric properties of BaTiO3-3{(1-x)TiO2-xWO3} system was studied. Addition of WO3 to this system resulted in the formation of BaWO4 and Ba2Ti9O20 phases. Both the dielectric constant (K) and the temperature coefficientof resonant frequency (Tf) were decreased with the amount of WO3 addition. The value of Q$\times$f0 was increased as the amount of WO3 was increased up to x=0.0275, and then decreased when x exceeded 0.03. At x=0.0275, this ceramic showed excellent microwave proprties of K=34-35, Q$\times$f0=50,000-53,000, and near zero ppm/$^{\circ}C$ of Tf.

• Journal of the Korean Ceramic Society
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• v.36 no.9
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• pp.915-922
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• 1999

Microwave dielectric properties and far infrared reflectivity spectra of the (Zr0.8Sn0.2)TiO4 ceramics were inves-tigated with the various cooling rate. Dielectric constant was nearly same value while the unloaded Q value was largely affected by cooling rate. The Q.f of 42,140 at 7 GHz was obtained for the specimens with cooling rate of 1$^{\circ}C$/min. The effect of the cooling rate on the change of the ionic the electronic polarization and the intrinsic microwave loss of the specimens were investigated by the infrared reflectivity spectra from 50 to 4000cm-1 which were calculated by Kramers-Kroning analysis and the classical oscillator model. The relative tendency of microwave dielectric properties of the specimens calculated from the relfectivity data were in good agreement with the results by the post resonant method.

• Journal of Powder Materials
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• v.17 no.4
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• pp.289-294
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• 2010

For the aim of low-temperature co-fired ceramic microwave components, sintering behavior and microwave properties (dielectric constant ${\varepsilon}_r$, quality factor Q, and temperature coefficient of resonant frequency ${\tau}_f$) are investigated in $Bi_{18}O(Ca_{0.725}Zn_{0.275})_8Nb_{12}O_{65}$ [BCZN] ceramics with addition of $V_2O_5$. The specimens are prepared by conventional ceramic processing technique. As the main result, it is demonstrated that the additives ($V_2O_5$) show the effect of lowering of sintering temperature and improvement of microwave properties at the optimum additive content. The addition of 0.25 wt% $V_2O_5$ lowers the sintering temperature to $890^{\circ}C$ utilizing liquidphase sintering and show the microwave dielectric properties (dielectric constant ${\varepsilon}_r$ = 75, quality factor $Q{\times}f$ = 572 GHz, temperature coefficient of resonance frequency ${\tau}_f\;=\;-10\;ppm/^{\circ}C$). The estimated microwave dielectric properties with $V_2O_5$ addition (increase of ${\varepsilon}_r$, decrease of $Q{\times}f$, shift of ${\tau}_f$ to negative values) can be explained by the observed microstrucure (sintered density, abnormal grain structure) and possibly high-permittivity $Bi_{18}Zn_8Nb_{12}O_{65}$ (BZN) phase determined by X-ray diffraction.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.340-345
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• 2003

B $i_2$ $O_3$-Ti $O_2$ composite dielectric ceramics have been prepared by a conventional solid state ceramic route. The composite ceramics were prepared with starting materials of different origin and the microwave dielectric properties were investigated. The sintered ceramics were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray microanalysis, Raman and microwave methods. Structural and microstructural analyses identified two separate phases: Ti $O_2$(rutile) and B $i_2$ $Ti_4$0$_{11}$. The separate grains of titania and bismuth titanate were distributed uniformly in the ceramic matrix. The composition 0.88Ti $O_2$-0.12B $i_2$ $Ti_4$ $O_{11}$ was found to have a Q$\times$f of 9300 GHz (measured at a frequency of 3.9 GHz), a temperature coefficient of frequency, $\tau$$_{cf}$ near zero and a high relative permittivity, $\varepsilon$r of 83. The microwave dielectric properties were measured down to 20$^{\circ}$K K. The quality factor increased on cooling the ceramic samples.les.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.288-291
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• 2002

An alkoxide-based sol-gel method was used to fabricate $(Pb_{x},Sr_{1-x})$TiO3 (PST) thin films on a Pt/Ti/SiO2/Si substrate, and the dielectric properties of the PST thin films were investigated as a function of the Pb/Sr composition for use in tunable microwave device applications. The dielectric properties of the PST films were strongly dependent on the Pb/Sr ratio. The dielectric constant and dielectric loss of the PST films increased with increasing Pb content, and the figure of merit (FOM) reached a maximum value of 27.5 at a Pb/Sr ratio of 4:6. The tunability increased with increasing Pb content. The dielectric constant, loss factor, and tunability of PST (50/50) thin films were 404, 0.023, and 51.73%, respectively. From the result, the PST films with good dielectric properties are useful candidates for tunable microwave device.

• Journal of the Korean Ceramic Society
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• v.51 no.1
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• pp.32-36
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• 2014

The effects of an amphiphilic agent and the orientation of BN on the microwave dielectric properties of BN / polyvinyl butyral (PVB) composites were investigated as a function of the BN content in volume fractions from 0.1 to 0.5 ($V_f$). The plate-shaped BN samples were oriented in the PVB matrix by physical processes, in this case tape casting and laminate methods. With an increase in the BN content, the dielectric constant (K) increased because the K of BN was higher than that of the PVB. At the same BN content, composites with an in-plane orientation of the BN showed a higher dielectric constant than that of composites with a transverse orientation of the BN because the ceramics were oriented parallel to the electric field. All of the composites showed nearly constant K values ranging from 1 to 9.4 GHz, indicating good frequency stability over a wide frequency range. At the same frequency, the K values of the composites increased with an increase in the BN content.