• 한국재료학회지
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• 제18권2호
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• pp.107-111
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• 2008

[ $BaO{\cdot}Nd_2O_3{\cdot}5TiO_2$ ] (BNT) ceramics modified with a borate glass containing Ba, Nd and Ti as glass constituents were investigated with regard to their sintering behavior and microwave dielectric properties. An addition of iso-component glass significantly improved the sinterabilty of the BNT ceramics and lowered the sintering temperature. A maximum density of $5.29\;g/cm^3$ and an x-y shrinkage of 17% were obtained for BNT ceramics containing 10wt.% of the glass sintered at $1100^{\circ}C$. The dielectric composition without the glass additive was only slightly densified at $1100^{\circ}C$. The resulting sample exhibited two crystalline phases, $BaNd_2Ti_5O_{14}$ and $Ba_2Ti_9O_{20}$, regardless of sintering temperature and glass content. When >10wt.% glass was added, exaggerated grain growth with a less uniform microstructure was found, resulting in the subsequent reduction of the fired density and the dielectric properties. BNT ceramics containing 10wt.% of the isocomponent glass sintered at $1100^{\circ}C$ for 4 h showed promising dielectric properties of k = 71.3 and Q = 1,330.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1427-1429
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• 2003

The $ZnNb_2O_6$ ceramics with 3wt% CuO were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1000^{\circ}C{\sim}1075^{\circ}C$ for 3hr. in air. The structural properties were investigated with sintering temperature by XRD and SEM. Also, the microwave dielectric properties were investigated with sintering temperature. Increasing the sintering temperature, the peak of second phase($Cu_3Nb_2O_8$) was increased. In the case of $ZnNb_2O_6$+CuO(3wt%) ceramics sintered at $1025^{\circ}C$ for 3hr, the dielectric constant, quality factor were 21.73, 19.276, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.259-259
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• 2007

The low temperature sintering of dolomite type borates, $CaZr(BO_3)_2$[CZB] ceramics and their microwave dielectric properties were investigated The sintering temperature of CZB ceramics could be reduced from $1150^{\circ}C$ to $925^{\circ}C$ by the addition of sintering additive. $CaZrO_3$, $ZrO_2$ and $CaB_2O_4$ second phases were found in the CZB ceramics. The syntheses, sintering properties, microstructures, and dielectricnproperties of dolomite-type borates were examined by XRD, thermal analysis, electron microscopy, network analyzer, and the results are discussed intensively. The compatibility with silver electrode was also explored.

• 한국세라믹학회지
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• 제50권1호
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• pp.70-74
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• 2013

Dependence of microwave dielectric properties on the crystallization behaviors of $CaMgSi_2O_6$ (diopside) glass-ceramics was investigated with different heat treatment methods (one and/or two-step). The crystallization behaviors of the specimens, crystallite size and degree of crystallization, were evaluated by differential thermal analysis (DTA), scanning electron microscope (SEM) and X-ray diffraction (XRD) analysis by combined Rietveld and reference intensity ratio (RIR) methods. With an increase in heattreatment temperature, the dielectric constant (K) and the quality factor (Qf) increased due to the increase of the crystallite size and degree of crystallization. The specimens heat-treated by the two-step method had a higher degree of crystallization than the specimens heat-treated by the one-step method, which induced improvement in the quality factor (Qf) of the specimens.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.439-442
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• 2004

The effects of sintering additives on the low-temperature sintering and microwave dielectric properties of $Mg_4Nb_2O_9$ dielectric ceramics were studied. When $3{\sim}20wt%$ of $0.242Bi_2O_3-0.758V_2O_5$ was added, the sintering temperature decreased from $1100{\sim}1300^{\circ}C$ to $950^{\circ}C$ and high density was obtained. When $Mg_4Nb_2O_9$ was sintered at $950^{\circ}C$ with 10wt% of sintering additive, the microwave dielectric properties of $Q{\times}f_0\;=\;80.035GHz,\;\epsilon_r\;=\;13.3\;and\;\tau_f\;=\;-12.9\;ppm/^{\circ}C$ were obtained.

• 대한전기학회논문지
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• 제43권3호
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• pp.442-446
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• 1994

In this study, microwave dielectric properties of 0.182BaO-0.818TiOS12T ceramics were investigated with sintering temperature and annealing time, and the application for the microwave dielectric resonator was studied. In the specimen simtered at 1400[$^{\circ}C$], dielectric constant, unloaded Q and temperature coefficient of resonant frequency had good values of 35.36, 5692, -4.43[ppm/$^{\circ}C$], respectively. The specimen which temperature coefficient of resonant frequency($\tau$f) was vared positive to negative value was selected, thereafter microwave dielctric properties was investigated with annealing time(0~4[hr]) in the fixed annealing temperature of 1350[$^{\circ}C$]. Increasing the annealing time, dielectric constant and unloaded Q were increased and temperature coefficient of resonant frequency was decreased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1355-1356
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• 2006

The microwave dielectric properties of the $Ba_{5}Ta_{4}O_{15}$ ceramics with sintering temperature were investigated. All sample of the $Ba_{5}Ta_{4}O_{15}$ ceramics prepared by conventional mixed oxide method and sintered at $1450^{\circ}C{\sim}1575^{\circ}C$. Porosity of the $Ba_{5}Ta_{4}O_{15}$ ceramics was reduced with increasing sintering temperature. The bulk density, dielectric constant and Qualify factor increased with increasing sintering temperature. In the case of $Ba_{5}Ta_{4}O_{15}$ ceramics sintered at $1550^{\circ}C$, The bulk density, dielectric constant and quality factor were $7.31g/cm^2$ and 27.4, 30,635GHz, respectively.

• 한국전기전자재료학회논문지
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• 제11권3호
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• pp.208-213
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• 1998

Microwave dielectric properties of $BiNbO_4$ containing CuO and $V_2O_5$(BN ceramics). BN ceramic with 0.07wt% $V_2O_5$ and 0.03wt% CuO (BNC3V7) was sintered at $900^{\circ}C$ where it is possible for these to be co-fired with Ag electrode. The dielectric constant of 44.3, TCF (Temperature Coefficient of resonance Frequency) of 2 ppm/$^{\circ}$ and Q${\times}f_o$ value (product of Quality value and resonance Frequency) of 22,000GHz could be obtained from those ceramics. It is observed that orthorhombic structure was stable $1000^{\circ}C$. As sintering temperature increases, the dielectric properties decreased. The main reasons were abnormal grain growth and the main peak of triclinic moved from the main peak of orthorhombic.

• Advances in materials Research
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• 제3권2호
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• pp.105-116
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• 2014

The microwave dielectric properties of $CeO_2$ nanoparticles (0.5, 1.0 & 1.5wt%) doped $Mg_2TiO_4$ (MTO) ceramics have been investigated at cryogenic temperatures. The XRD patterns of the samples were refined using the full proof program reveal the inverse spinel structure without any secondary phases. The addition of $CeO_2$ nanoparticles lowered the sintering temperature with enhancement in density and grain size as compared to pure MTO ceramics. This is attributed to the higher sintering velocity of the fine particles. Further, the microwave dielectric properties of the MTO ceramics were measured at cryogenic temperatures in the temperature range of 6.5-295 K. It is observed that the loss tangent ($tan{\delta}$) of all the samples increased with temperature. However, the $CeO_2$ nanoparticles doped MTO ceramics manifested lower loss tangents as compared to the pure MTO ceramics. The loss tangents of the pure and MTO ceramics doped with 1.5 wt% of $CeO_2$ nanoparticles measured at 6.5K are found to be $6.6{\times}10^{-5}$ and $5.4{\times}10^{-5}$, respectively. The addition of $CeO_2$ nanoparticles did not cause any changes on the temperature stability of the MTO ceramics at cryogenic temperatures. On the other hand, the temperature coefficient of the permittivity increased with rise in temperature and with the wt% of $CeO_2$ nanoparticles. The obtained lower loss tangent values at cryogenic temperatures can be attributed to the decrease in both intrinsic and extrinsic losses in the MTO ceramics.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권7호
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• pp.344-348
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• 2006

The effect of x on microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics for microwave components were investigated. All spcecimens prepared by the conventional mixed oxied method and sintered at $1450^{\circ}C$. Microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-xTiO_2$ ceramics were influenced by $MgTi_2O_5$ phase. Also the microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics were dominated with an addition of $CaTiO_3\;and\;SrTiO_3$. The dielectric constant $(\varepsilon_r)$, quality factor $(Q{\times}f_r)$ and temperature coefficient of the resonant frequency $(TCRF,\;\tau_f)$ of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics were $12.96\sim70.98,\;5,132\sim186,410GHZ$ and $-35.82\sim+75.96ppm/^{\circ}C$, respectively, and depend on x and addition materials.