• Title/Summary/Keyword: microstructure effect

Search Result 2,438, Processing Time 0.033 seconds

Microstructures and Mechanical Properties of API J55 steel with Heat treatment conditions and Alloying elements(B, Ti) (API J55강의 미세조직과 기계적 특성에 미치는 열처리 및 합금원소(B, Ti)의 영향)

  • Choi, Jong-Min
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.19 no.4
    • /
    • pp.69-76
    • /
    • 2018
  • This study examined the effect of the heat treatment and alloying elements (B, Ti) on the microstructures and mechanical properties of API J55 steel. The experiments were carried out using various austenization temperatures ($880^{\circ}C$, $910^{\circ}C$, $940^{\circ}C$), cooling methods (water quenching, oil quenching) and tempering temperatures (none, $550^{\circ}C$, $650^{\circ}C$) with J55 and J55+B,Ti steels. The phase diagram and CCT curve were simulated based on the chemical compositions of the J55 and J55+B,Ti steels to predict the microstructures. The results showed that the A1 and A3 temperatures decreased and, as a result, the noses of the ferrite and bainite parts of the CCT curve moved to the right. Various microstructures were formed, namely martensite, bainite, ferrite and pearlite, in accordance with the heat treatment, which had an effect on the hardness, tensile strength and toughness. Martensite was formed after water quenching, but bainite and ferrite appeared after oil quenching with the J55 specimens. On the other hand, martensite was formed, regardless of the cooling method (water quenching, oil quenching), with the J55+B,Ti specimens, because of the improvement of the hardenability caused by the addition of boron. Therefore, the J55+B,Ti specimens exhibited much higher mechanical properties than the J55 specimens, even after the tempering treatment, since the addition of Ti caused fine precipitates to be formed, which inhibited grain growth at the recrystallization temperature.

Effect of Forming Process and Particle Size on Properties of Porous Silicon Carbide Ceramic Candle Filters (성형공정(成形工程)과 원료입도(原料粒度)가 다공성(多孔性) 탄화규소(炭火硅素) 세라믹 캔들 필터 특성(特性)에 미치는 영향(影響))

  • Han, In-Sub;Seo, Doo-Won;Hong, Ki-Seog;Woo, Sang-Kuk
    • Resources Recycling
    • /
    • v.19 no.5
    • /
    • pp.31-43
    • /
    • 2010
  • To fabricate porous SiC candle filter for filtration facility of the IGCC system, the candle type filter preforms were fabricated by ramming and vacuum extrusion process. A commercially available ${\alpha}$-SiC powders with various particle size were used as starting raw materials, and $44\;{\mu}m$ mullite, $CaCO_3$ powder were used as non-clay based inorganic sintering additive. The candle typed preforms by ramming process and vacuum extrusion were sintered at $1400^{\circ}C$ for 2h in air atmosphere. The effect of forming method and particle size of filter matrix on porosity, density, strength (flexural and compressive strength) and microstructure of the sintered porous SiC candle tilters were investigated. The sintered porous SiC filters which were fabricated by ramming process have more higher density and strength than extruded filter in same particle size of the matrix, and its maximum density and 3-point bending strength were $2.00\;g/cm^3$ and 45 MPa, respectively. Also, corrosion test of the sintered candle filter specimens by different forming method was performed at $600^{\circ}C$ for 2400h using IGCC syngas atmosphere for estimation of long-term reliability of the candle filter matrix.

Effect of Small Additives on the Microstructure of Strip-Cast Nd-Fe-B Alloys (소량의 첨가원소가 Strip-Cast Nd-Fe-B 향금의 미세 조직 형성에 미치는 영향)

  • Lee, D.H.;Jang, T.S.;Kim, D.H.;Kim, Andrew-S.
    • Journal of the Korean Magnetics Society
    • /
    • v.14 no.5
    • /
    • pp.196-200
    • /
    • 2004
  • In order to improve dendritic formation of Nd$_2$Fe$\_$14/B phase in the strip-cast Nd-Fe-B alloys that are frequently used for production of high energy sintered magnets, effect of small substitutional additives such as Cu (0.3~1.0 at. %) and Co (0.5~1.5 at.%) on the phase formation and microstructures of the strip-cast alloys based on Nd$\_$14/Fe$\_$80/B$\_$6/ were investigated. As the amount of Cu addition increased, formation of Nd$_2$Fe$\_$14/B dendrites along the direction normal to the strip surface was suppressed with the reduction of the strip thickness mainly due to the increase of fluidity of the melt. However, both the dendrites and their <001> preferred orientation along the direction normal to the strip surface were improved with the increase of the strip thickness as the amount of Co addition increased. The dendrites became finer after small amount of Cu or Co was added. While small copper additions tended to stabilize the formation of primary Fe, small cobalt additions suppressed it. When small amount of Zr was added, however, the dendrite structures were totally collapsed with excessive grain growth of Nd$_2$Fe$\_$14/B.

Effect of V$_2$O$_5$ Addition on Microwave Dielectric Properties of (Zr$_{0.8}$,Sn$_{0.2}$)TiO$_4$ (V$_2$O$_5$의 첨가가 (Zr$_{0.8}$,Sn$_{0.2}$)TiO$_4$의 마이크로파 유전특성에 미치는 영향)

  • 이경호
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.8 no.1
    • /
    • pp.27-32
    • /
    • 2001
  • The effect of $V_2O_5$, a donor-type dopant on the degradation of quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$was compared with Ta$_2$O$_{5}$ doped ($Zr_{0.8}, Sn_{0.2})TiO_4$ in terms of microstructure, electrical conductivity, and oxidation state of the dopant. It is well known that the addition of the donor type species such as $Ta_2O_5,Nb_2O_5, Sb_2O_5, WO_{3}$, increases the quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$due to decrease the oxygen vacancy concentration. Unlike other dopants, however, the addition of $V_2O_5$ decreased the quality factor. The degradation of quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$was resulted from the formation of grain boundary phase and $V_2O_5$rich fiber shaped secondary phase, and the increasing the oxygen vacancy concentration due to unstability of oxidation state of vanadium ions in ($Zr_{0.8}, Sn_{0.2})TiO_4$ceramic.c.

  • PDF

A Study of Post Electrode Formation by Microwave Sintering in LTCC Substrate (마이크로파 소결법을 이용한 LTCC 기판 Post 전극 형성에 관한 연구)

  • Kim, Yong-Suk;Lee, Taek-Jung;Yoo, Won-Hee;Chang, Byeung-Gyu;Park, Sung-Yeol;Oh, Yong-Soo
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.14 no.4
    • /
    • pp.43-48
    • /
    • 2007
  • This study is focused on the effect of the surface properties for the post electrode, which is used in pad formation consisted of SMT such as IC, passive component, combined with fired LTCC substrate, We carried out the surface microstructure of sintered electrode and the basic reliability evaluations with sample fired by microwave sintering to solve the problems occurred in post electrode by electric sintering. We evaluated surface densification status of post electrode according to various conditions of microwave sintering. In additions, it is obtained strong effect on blister improvement of post electrode because of over-sintering and the insufficient out gas in bum out process. As a result of adhesion strength, we confirmed $44.3N/mm^2$ in microwave sintering and $34.5N/mm^2$ in electric sintering, respectively. This result will be used for the basic reliability test. Finally, microwave sintering seems to be economic in process time with 30 min compared to electric sintering with 10 hr. In terms of Mass production and efficiency, microwave sintering are excepted to be higher than electric sintering.

  • PDF

Spark plasma sintering of UO2 fuel composite with Gd2O3 integral fuel burnable absorber

  • Papynov, E.K.;Shichalin, O.O.;Belov, A.A.;Portnyagin, A.S.;Buravlev, I.Yu;Mayorov, V.Yu;Sukhorada, A.E.;Gridasova, E.A.;Nomerovskiy, A.D.;Glavinskaya, V.O.;Tananaev, I.G.;Sergienko, V.I.
    • Nuclear Engineering and Technology
    • /
    • v.52 no.8
    • /
    • pp.1756-1763
    • /
    • 2020
  • The paper studies spark plasma sintering (SPS) of industrially used UO2-based fuel containing integral fuel burnable absorber (IFBA) of neutrons Gd2O3. Densification dynamics of pristine UO2 powder and the one added with 2 and 8 wt% of Gd2O3 under ultrasonication in liquid has been studied under SPS conditions at 1050, 1250, and 1450 ℃. Effect of sintering temperature on phase composition as well as on O/U stoichiometry has been investigated for UO2 SPS ceramics. Sintering of uranium dioxide added with Gd2O3 yields solid solution (U,Gd)O2, which is isostructural to UO2. SEM with EDX and metallography were implemented to analyze the microstructure of the obtained UO2 ceramics and composite UO2-Gd2O3 one, particularly, open porosity, defects, and Gd2O3 distribution were studied. Microhardness, compressive strength and density were shown to reduce after addition of Gd2O3. Obtained results prove the hypothesis on formation of stable pores in the system of UO2-Gd2O3 due to Kirkendall effect that reduces sintering efficiency. The paper expands fundamental knowledge on pros and cons of fuel fabrication with IFBA using SPS technology.

Corrosion behaviors of Cp-Ti and Ti-6Al-4V alloys by TiN coating (TiN 코팅된 Ti 및 Ti-6Al-4V합금의 부식거동)

  • Lee, Soon-Hyun;Jung, Yoong-Hun;Choi, Han-Chul;Ko, Yeong-Mu
    • Journal of Technologic Dentistry
    • /
    • v.30 no.1
    • /
    • pp.25-31
    • /
    • 2008
  • Cp-Ti and Ti-6Al-4V alloys commonly used dental implant materials, particularly for orthopaedic and osteosynthesis because of its suitable mechanical properties and excellent biocompatibility. This alloys have excellent corrosion behavior in the clinical environment. The first factor to decide the success of dental implantation is sufficient osseointegration and high corrosion resistance between on implant fixture and its surrounding bone tissue. In this study, in order to increase corrosion resistance and biocompatibility of Cp-Ti and Ti-6Al-4V alloy that surface of manufactured alloy was coated with TiN by RF-magnetron sputtering method. The electrochemical behavior of TiN coated Cp-Ti and Ti-6Al-4V alloy were investigated using potentiodynamic (EG&G Co, PARSTAT 2273. USA) and potentiostatic test (250mV) in 0.9% NaCl solution at 36.5 $\pm$ 1$^{\circ}C$. These results are as follows : 1. From the microstructure analysis, Cp-Ti showed the acicular structure of $\alpha$-phase and Ti-6Al-4V showed the micro-acicular structure of ${\alpha}+{\beta}$ phase. 2. From the potentiodynamic test, Ecorr value of Cp-Ti and Ti-6Al-4V alloys showed -702.48mV and -319.87mV, respectively. Ti-6Al-4V alloy value was higher than Cp-Ti alloy. 3. From the analysis of TiN and coated layer, TIN coated surface showed columnar structure with 800 nm thickness. 4. The corrosion resistance of TiN coated Cp-Ti and Ti-6Al-4V alloys were higher than those of the non-coated Ti alloys in 0.9% NaCl solution from potentiodynamic test, indicating better protective effect. 5. The passivation current density of TiN coated Cp-Ti and Ti-6Al-4V alloys were smaller than that of the noncoated implant fixture in 0.9% NaCl solution, indicating the good protective effect resulting from more compact and homogeneous layer formation.

  • PDF

Effect of Annealing Temperature on Microstructure and Properties of the Pressureless-Sintered $SiC-ZrB_2$ Electroconductive Ceramic Composites (상압소결(常壓燒結)한 $SiC-ZrB_2$ 전도성(電導性) 복합체(複合體)의 미세구조(微細構造)와 특성(特性)에 미치는 Annealing 온도(溫度)의 영향(影響))

  • Shin, Yong-Deok;Ju, Jin-Young
    • The Transactions of the Korean Institute of Electrical Engineers C
    • /
    • v.55 no.9
    • /
    • pp.434-441
    • /
    • 2006
  • The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] of $Al_2O_3+Y_2O_3$(6:4 mixture of $Al_2O_3\;and\;Y_2O_3$) as a sintering aid. The relative density and mechanical properties are increased markedly at temperatures in the range of $1,850{\sim}1,900[{^\circ}C]$. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 81.1[%], 230[MPa], 9.88[GPa] and $6.05[MPa\;m^{1/2}]$ for $SiC-ZrB_2$ composites of $1,900[{^\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[{^\circ}C]\;to\;700[{^\circ}C]$, The electrical resistivity showed the value of $1.36{\times}10^{-4},\;3.83{\times}10^{-4},\;3.51{\times}10^{-4}\;and\; 3.2{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $4.194{\times}10^{-3},\;3,740{\times}10^{-3},\;2,993{\times}10^{-3},\;3,472{\times}10^{-3}/[^{\circ}C}$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively in the temperature ranges from $25[{\circ}C]\;to\;700[{\circ}C]$, It is assumed that because polycrystallines such as recrystallized $SiC-ZrB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-ZrB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

Effect of AlN Addition on the Thermal Conductivity of Sintered $Al_2O_3$ (알루미나 소결체의 열전도도에 대한 AlN의 첨가효과)

  • 김영우;박홍채;오기동
    • Journal of the Korean Ceramic Society
    • /
    • v.33 no.3
    • /
    • pp.285-292
    • /
    • 1996
  • The effect of AlN on the thermal conductivity of aluminum oxide pressurelessly sintered at nitrogen atmos-phere was investigated. Increasing aluminium nitride content up to 1~10 mol% the thermal conductivity of $Al_{2}O_{3}$-AlN system was singnificantly decreased and was constant with adding 20 and 25 mol% aluminium nitride. The thermal conuctivity of $Al_{2}O_{3}$ containing 1~10 mol% the thermal conductivity of $Al_{2}O_{3}$-AlN system was singificantly decreased and was constant with adding 20 and 25mol% aluminum nitride. The thermal conctivity of $Al_{2}O_{3}$ containing 1~10 mol% AlN showed a maximum at $1700^{\circ}C$ and decrea-sed with increasing sintering tempertures. This phenomenon was attributed to $\alpha$-$Al_{2}O_{3}$ and ALON formed by reacting $Al_{2}O_{3}$ with AlN up to $1700^{\circ}C$ and the secondary phases such as ${\gamma}$-ALON ($9Al_{2}O_{3}$.AlN)and $\Phi$($5Al_{2}O_{3}$.AlN) phase above $1750^{\circ}C$ The thermal conductivity of $Al_{2}O_{3}$ containing 20 and 25 mol% AlN showed maximum value at $1800^{\circ}C$ Both $\alpha$-$Al_{2}O_{3}$ and ALON existed up to $1600^{\circ}C$ value at $1800^{\circ}C$ Both $\alpha$-$Al_{2}O_{3}$ and ALON existed up to $1600^{\circ}C$ while only AlON phase existed above $1650^{\circ}C$.

  • PDF

Fluxless Plasma Soldering of Pb-free Solders on Si-wafer -Effect of Plasma Cleaning - (Si-wafer의 플럭스 리스 플라즈마 무연 솔더링 -플라즈마 클리닝의 영향-)

  • 문준권;김정모;정재필
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.11 no.1
    • /
    • pp.77-85
    • /
    • 2004
  • To evaluate the effect of plasma cleaning on the soldering reliability the plasma cleaning using Ar-10vol%$H_2$ gas was applied on a UBM(Under Bump Metallization). The UBM consisted of Au/ Cu/ Ni/ Al layers which were deposited on a Si-wafer with 20 nm/ 4 $\mu\textrm{m}$/ 4 $\mu\textrm{m}$/ 0.4 $\mu\textrm{m}$ thickness respectively. Sn-3.5%Ag, Sn-3.5%Ag-0.7%Cu and Sn-37%Pb solder balls sized of 500 $\mu\textrm{m}$ in diameter were used. Solder balls on the UBM were plasma reflowed under Ar-10%$H_2$ plasma (with or without plasma cleaning). They were compared with air reflowed solder balls with flux. The spreading ratios of plasma reflowed solder with plasma cleaning was 20-40% higher than that of plasma reflowed solder without plasma cleaning. The shear strength of plasma reflowed solder with plasma cleaning was about 58-65MPa. It showed 60-80% higher than that of plasma reflowed solder without plasma cleaning and 15-35% higher than that of air reflowed solder. Thus it was believed that plasma cleaning for the UBM using Ar-10vol%$H_2$ gas was considerably effective for the improvement of the strength of solder ball.

  • PDF