• Title/Summary/Keyword: microstructure characterization

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Fabrication and Characterization of $CuInSe_2$Thin Films from $In_2Se_3$ and$Cu_2Se$Precursors ($In_2Se_3$$Cu_2Se$를 이용한 $CuInSe_2$박막제조 및 특성분석)

  • Heo, Gyeong-Jae;Gwon, Se-Han;Song, Jin-Su;An, Byeong-Tae
    • Korean Journal of Materials Research
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    • v.5 no.8
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    • pp.988-996
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    • 1995
  • CuInSe$_2$this films as a light absorber layer were fabricated by vacuum evaporation using In$_2$Se$_3$and Cu$_2$Se precursors and their properties were analyzed. Indium selenide films of 0.5${\mu}{\textrm}{m}$ thickness were first deposited by vacuum evaporation of In$_2$Se$_3$ on a Corning 7059 glass substrate. The films deposited at suscepor temperature of 40$0^{\circ}C$ showed a flat surface morphology with densely Packed grain structure. CuInSe$_2$films directly formed by evaporating Cu$_2$Se on the predeposited In$_2$Se$_2$films also showed a very flat surface when the susceptor temperature was $700^{\circ}C$. Cu$_2$Se, a second phase in the CuInSe$_2$film, was removed by evaporating additional In$_2$Se$_3$on the CuInSe$_2$film at $700^{\circ}C$. The grain size of 1.2${\mu}{\textrm}{m}$ thick CuInSe$_2$, film was about 2${\mu}{\textrm}{m}$ and the film had a (112) preferred orientation. As the amount of deposited In$_2$Se$_3$increased, the electrical resistivity of CuInSe$_2$films increased because of the decrease of hole concentration. But the optical band gap was almost constant at the value of 1.04eV, The CuInSe$_2$film grown on a Mo/glass substrate had a similar smooth microstructure compared to that on a glass substrate. A solar cell with ZnO/CdS/CuInSe$_2$/Mo structure may be realized based on the above CuInSe$_2$films.

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Characterization and Conversion Electron Mössbauer Spectroscopy of HoMn1-x-FexO3 Thin Films by Pulsed Laser Deposition (PLD를 이용한 HoMn1-x-FexO3 박막 제조 및 후방 산란형 뫼스바우어 분광 연구)

  • Choi, Dong-Hyeok;Shim, In-Bo;Kim, Chul-Sung
    • Journal of the Korean Magnetics Society
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    • v.17 no.1
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    • pp.18-21
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    • 2007
  • The hexagonal $HoMn_{1-x}-Fe_xO_3$(x=0.00, 0.05) thin films were prepared using pulsed laser deposition(PLD) method on $Pt/Ti/SiO_2/Si$ substrate. The microstructure and magnetic properties have been studied by x-ray diffraction(XRD), atomic force microscopy (AFH), scanning electron microscope(SEM:), x-ray photoelectron spectroscopy(XPS), and conversion electron $M\"{o}ssbauer$ spectroscopy(CEMS). From the analysis of the x-ray diffraction patterns, the crystal structure for all films was found to be a hexagonal($P6_3cm$), which was preferentially grown along(110) direction. The lattice constant $c_0$ of the film with x=0.05 was close to that of single crystal, whereas lattice constant $a_0$ with respect to single crystal shows a slight decrease. This difference of lattice parameters between film and single crystal was caused by the lattice mismatch between the film and $Pt/Ti/SiO_2/Si$ substrate. Conversion electron $M\"{o}ssbauer$ spectrum of $HoMn_{0.95}Fe_{0.05}O_3$ thin film shows an asymmetry doublet absorption ratio at room temperature, which is due to the oriented direction of crystallographic domains. This is corresponding with analysis of x-ray diffraction. The quadrupole splitting(${\Delta}E_Q$) at room temperature is found to be $1.62{\pm}0.01mm/s$. This large ${\Delta}E_Q$ was caused by asymmetry environment surrounding Fe ion.

Technological Diversities Observed in Bronze Objects of the Late Goryo Period - Case Study on the Bronze Bowls Excavated from the Burial Complex at Deobu-gol in Goyang - (고려 말 청동용기에 적용된 제작기술의 다양성 연구 - 고양 더부골 고분군 출토 청동용기를 중심으로 -)

  • Jeon, Ik Hwan;Lee, Jae Sung;Park, Jang Sik
    • Korean Journal of Heritage: History & Science
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    • v.46 no.1
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    • pp.208-227
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    • 2013
  • Twenty-seven bronze bowls excavated from the Goryo burial complex at Deobu-gol were examined for their microstructure and chemical composition to characterize the bronze technology practiced by commoners at the time. Results showed that the objects examined can be classified into four groups: 1) objects forged out of Cu-near 22%Sn alloys and then quenched; 2) objects cast from Cu-below 10% Sn alloys containing lead; 3) objects cast from Cu-10%~20% Sn alloys containing lead and then quenched; 4) objects forged out of Cu-10~20% Sn alloys containing lead and then quenched. This study revealed that the fabrication technique as determined by alloy compositions plays an important role in bronze technology. The use of lead was clearly associated with the selection of quenching temperatures, the character of inclusions and the color characteristics of bronze surfaces. It was found that the objects containing lead were quenched at temperatures of $520^{\circ}{\sim}586^{\circ}C$ while those without lead were quenched at the range of $586^{\circ}{\sim}799^{\circ}C$. The presence of selenium in impurity inclusions was detected only in alloys containing lead, suggesting that the raw materials, Cu and Sn, used in making the lead-free alloys for the first group were carefully selected from those smelted using ores without lead contamination. Furthermore, the addition of lead was found to have significant effects on the color characteristics of the surface of bronze alloys when they are subjected to corrosion during interment. In leaded alloys, corrosion turns the surface light green or dark green while in unleaded alloys, corrosion turns the surface dark brown or black. It was found that in fabrication, the wall thickness of the bronze bowls varies depending on the application of quenching; most of the quenched objects have walls 1mm thick or below while those without quenching have walls 1mm thick or above. Fabrication techniques in bronze making usually reflect social environments of a community. It is likely that in the late Goryo period, experiencing lack of skilled bronze workers, the increased demand for bronze was met in two ways; by the use of chief lead instead of expensive tin and by the use of casting suitable for mass production. The above results show that the Goryo bronze workers tried to overcome such a resource-limited environment through technological innovations as apparent in the use of varying fabrication techniques for different alloys. Recently, numerous bronze objects are excavated and available for investigation. This study shows that with the use of proper analytical techniques they can serve as a valuable source of information required for the characterization of the associated technology as well as the social environment leading to the establishment of such technology.

Dry etching of polycarbonate using O2/SF6, O2/N2 and O2/CH4 plasmas (O2/SF6, O2/N2와 O2/CH4 플라즈마를 이용한 폴리카보네이트 건식 식각)

  • Joo, Y.W.;Park, Y.H.;Noh, H.S.;Kim, J.K.;Lee, S.H.;Cho, G.S.;Song, H.J.;Jeon, M.H.;Lee, J.W.
    • Journal of the Korean Vacuum Society
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    • v.17 no.1
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    • pp.16-22
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    • 2008
  • We studied plasma etching of polycarbonate in $O_2/SF_6$, $O_2/N_2$ and $O_2/CH_4$. A capacitively coupled plasma system was employed for the research. For patterning, we used a photolithography method with UV exposure after coating a photoresist on the polycarbonate. Main variables in the experiment were the mixing ratio of $O_2$ and other gases, and RF chuck power. Especially, we used only a mechanical pump for in order to operate the system. The chamber pressure was fixed at 100 mTorr. All of surface profilometry, atomic force microscopy and scanning electron microscopy were used for characterization of the etched polycarbonate samples. According to the results, $O_2/SF_6$ plasmas gave the higher etch rate of the polycarbonate than pure $O_2$ and $SF_6$ plasmas. For example, with maintaining 100W RF chuck power and 100 mTorr chamber pressure, 20 sccm $O_2$ plasma provided about $0.4{\mu}m$/min of polycarbonate etch rate and 20 sccm $SF_6$ produced only $0.2{\mu}m$/min. However, the mixed plasma of 60 % $O_2$ and 40 % $SF_6$ gas flow rate generated about $0.56{\mu}m$ with even low -DC bias induced compared to that of $O_2$. More addition of $SF_6$ to the mixture reduced etch of polycarbonate. The surface roughness of etched polycarbonate was roughed about 3 times worse measured by atomic force microscopy. However examination with scanning electron microscopy indicated that the surface was comparable to that of photoresist. Increase of RF chuck power raised -DC bias on the chuck and etch rate of polycarbonate almost linearly. The etch selectivity of polycarbonate to photoresist was about 1:1. The meaning of these results was that the simple capacitively coupled plasma system can be used to make a microstructure on polymer with $O_2/SF_6$ plasmas. This result can be applied to plasma processing of other polymers.