• Tribology and Lubricants
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• v.28 no.1
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• pp.7-11
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• 2012

In this paper, the results of finite element(FE) analysis of chemical mechanical polishing(CMP) process using 2-dimensional elements were discussed. The objective of this study is to find the generation mechanism of microscratches on a wafer surface during the process. Especially, a FE model with a particle inside pad pore was considered to observe how such a contact situation could contribute to microscratch generation. The results of the finite element simulations revealed that during CMP process the pad-particle mixture could be formed and this would be a major factor leading to microscratch generation.

• Transactions of the Society of Information Storage Systems
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• v.7 no.2
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• pp.60-64
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• 2011

Chemical mechanical planarization is one of the core processes in fabrication of semiconductors, which are increasingly used for information storage devices like solid state drives. For higher data capacity in storage devices, CMP process is required to show ultimate precision and accuracy. In this work, 2-dimensional finite element models were developed to investigate the effects of the slurry particle impact on microscratch generation and the phenomena generated at pad-particle-wafer contact interface. The results revealed that no plastic deformation and corresponding material removal could be generated by simple impact of slurry particles under real CMP conditions. From the results of finite element simulations, it could be concluded that the pad-particle mixture formed in CMP process would be one of major factors leading to microscratch generation.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1888-1890
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• 1999

In this work, we have systematically studied the effects of filtration and the defect trend as a function of polished wafer count using various filters in Inter-Metal Dielectric(IMD) CMP. The filter Installation in CMP polisher makes defect reduced after IMD CMP. As a result of formation micro-scratches, it shows that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. We have acknowledged slurry filter lifetime is fixed by the degree of generating defects.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.235-239
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• 2001

In recent years, as Chemical Mechanical Planarization(CMP) has been routinely utilized in integrated circuit(IC) fabrication, the consumption of slurry, main consumable in a CMP process, is greatly increased. Thus the reprocess of CMP slurries has been actively considered in the industry to reduce cost-of-consumable (COC). The main purpose of this study was to recycle the used oxide slurry using filters as a new method. As a result, Ultra Fine(UF) Filter could distinguish silica from the used oxide slurry and Reverse Osmosis(RO) Filter could distinguish Deionized(DI) Water and chemistry from chemistry solution. The tetraethylorthosilicate removal rate was almost the same as the number of recycle polishing was increased, when it was modified by slightly adding new SS-12 slurry. The microscratch didnt found as the number of recycle polishing was increased.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.101-106
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• 1998

The poor wear and scratch properties of polycarbonate have limited its application in many fields. In order to improve the wear and scratch properties of polycarbonate we have deposited diamond like carbon (DLC) coatings. The diamond like carbon coatings were made using a high frequency ion beam gun by introducing H2 and CH4 gases. The coatings were characterized with Raman spectroscopy, scanning electron microscope, ellipsometer, microscratch tester and hazemeter. Polymeric hard coating was applied onto the polycarbonate substrate before depositing a DLC coating to investigate the effect of interlayer on the system's failure mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.30-33
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter-level dielectrics (ILD). Especially, defects like micro-scratch lead to severe circuit failure, and affects yield. CMP slurries can contain particles exceeding $1{\mu}m$ size, which could cause micro-scratch on the wafer surface. The large particles in these slurries may be caused by particle agglomeration in slurry supply line. To reduce these defects, slurry filtration method has been recommended in oxide CMP. In this work, we have studied the effects of filtration and the defect trend as a function of polished wafer count using various filters in inter-metal dielectric(IMD)-CMP. The filter installation in CMP polisher could reduce defect after IMD-CMP. As a result of micro-scratches formation, it shows that slurry filter plays an important role in determining consumable pad lifetime.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.557-561
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• 2001

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integraded circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). Especially, defects such as micro-scratch lead to severe circuit failure which affect yield. CMP slurries can contain particles exceeding 1㎛ in size, which could cause micro-scratch on the wafer surface. The large particles in these slurries may be caused by particles agglomeration in slurry supply line. To reduce these defects, slurry filtration method has been recommended in oxide CMP. In this work, we have studied the effects of filtration and the defect trend as a function of polished wafer count using various filters in inter-metal dielectrics(IMD)-CMP process. The filter installation in CMP polisher could reduce defects after IMD-CMP process. As a result of micro-scratch formation, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. We have concluded that slurry filter lifetime is fixed by the degree of generating defects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.119-120
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• 2008

ILD CMP process has been well accepted for the planarization of the dielectric oxide film and becomes a critical process in ULSI manufacturing due to the rapid shrinkage of the design rule for the device. In total manufacturing process steps for a device, the proportion of ILD CMP process has been gradually increased. Ever since ILD CMP has been introduced, the scratches have been a major defects on polished surfaces which cause the electrical shorts between vias or metal lines [1,2]. It was reported that micro-scratches are caused by large, irregularly shaped particles during CMP process. Therefore, most of the CMP users have used < 5 m POU filter to remove and reduce the scratch source from the slurry. However, the scratch has always been the biggest concern in ILD polishing whatever preventive actions are taken. Silica and ceria slurries are widely used for ILD CMP process. There are not much differences in generated scratches and their formation mechanism. In this study, the scratches were investigated as a function of polishing conditions with possible explanation on formation mechanism in ILD CMP.