• Korean Journal of Materials Research
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• v.10 no.12
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• pp.819-824
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• 2000

In this research, the etching characteristics of Ta thin film with chlorine plsama have been studied by Electron Cyclotron Resonance (ECR) plasma etching system. The effects of microwave power, RF bias power, working pressure and gas chemistry on the etching profiles have been investigated. The microloading effect, which was observed at fine pattern formation, was effectively suppressed by double step etching, and anisotropic $0.2{\mu\textrm{m}}$ L&S patterns were successfully generated.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.4
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• pp.43-47
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• 2000

The etching characteristic of a tantalum thin film with pure chlorine plasma was studied using an electron cyclotron resonance etcher system. Optical emission actinometry (OEA) was used for the study of the etching mechanism of a tantalum thin film and optimum process condition was achieved by OEA study. Based on this mechanism, double step etching was performed and 0.15 $\mu\textrm{m}$ L & S was acquired successfully suppressing the microloading effect.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.97-102
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• 2000

We have studied etching characteristic of Ta film using Electron Cyclotron Resonance (ECR) etcher system. Microwave source power. RF bias power. and working pressure were varied to investigate the etch Profile. And we have used two step etching method to acquire the goWe have studied etching characteristic of Ta film using Electron Cyclotron Resonance (ECR) etcher system. Microwave source power. RF bias power. and working pressure were varied to investigate the etch Profile. And we have used two step etching method to acquire the good etch profile preventing the microloading effect.od etch profile preventing the microloading effect.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.1-6
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• 2000

X-ray lithography mask with SiC membrane and Ta absorber patterns has been fabricated using ECR plasma CVD, d.c. magnetron sputtering, and ECR plasma etching. The stress of stoichiometric SiC film was adjusted by rapid thermal annealing under $N_2$, ambient. Adjusting the working pressure during sputtering process resulted in a near-zero residual stress, reasonable density, and smooth surface morphology of Ta film. Cl-based plasma showed a good etching characteristics of Ta, and two-step etching process was implemented to suppress microloading effect fur sub-quarter $\mu\textrm{m}$ patterning.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.922-925
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• 1999

The Silylation photo-resist etch process was tested by Enhanced-ICP dry etcher. The comparison of the two process results of micro pattern etching with 0.25${\mu}{\textrm}{m}$ CD by E-ICP and ICP reveals that E-ICP has better quality than ICP The etch rate and the microloading effect was improved in E-ICP Especially, the problem of the lateral etch was improved in E-ICP.