• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1149-1152
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• 2008

Nitride semiconductor based light-emitting diodes attain a new functionality of polychromatic emission by the use of three-dimensionally faceted microstructures, which may lead to an advanced lighting technology in which the light source spectra are synthesized so as to meet requirements of the application.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3322-3324
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• 1999

This paper studies on the design and fabrication of a micro in-plane positioning actuator integrated with a microlens. Proposed in-plane actuator is a micro XY-stage which is composed of two linear comb drive actuators being orthogonal to each other. In the fabrication of actuator, the single crystalline silicon substrate anodically bonded with a #7740 glass substrate is used because of simple release and passivation. The structure of actuator is formed on the silicon facet of bonded fixture by chlorine-based deep RIE and then released by isotropic wet etching of glass (#7740) in hydrofluoric acid solution. Fabricated actuator has a large travel range up to $30({\pm}15){\mu}m$ and high resolution less than 0.01f1l1l in each direction. Experimented resonant frequency of this actuator is 630Hz. The micro-Fresnel lens is fabricated on the square-shape glass structure prepared in the center of actuator.

• Proceedings of the Korean Society for Agricultural Machinery Conference
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• 2000.11b
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• pp.227-235
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• 2000

Agricultural products are easily deformable its shape because of some external forces. However, these force behavior is difficult to measure quantitatively. Until now, many researches on the mechanical property was performed with various methods such as material testing, chemical analysis and non-destructive methods. In order to investigate force behavior on the cellular unit of agricultural products, electro-microscope based 3D image processing method will contribute to analysis of plant cells behavior. Before image measurement of plant cells, plant sample was cut off cross-sectioned area in a size of almost 300-400 ${\mu}$ m units using the micron thickness device, and some of preprocessing procedure was performed with fixing and dyeing. However, the wall structure of plant cell is closely neighbor each other, it is necessary to separate its boundary pixel. Therefore, image merging and shrinking algorithm was adopted to avoid disconnection. After then, boundary pixel was traced through thinning algorithm. Each image from the electro-microscope has a information of x,y position and its height along the z axis cross sectioned image plane. 3D image was constructed using the continuous image combination. Major feature was acquired from a fault image and measured area, thickness of cell wall, shape and unit cell volume. The shape of plant cell was consist of multiple facet shape. Through this measured information, it is possible to construct for structure shape of unit plant cell. This micro unit image processing techniques will contribute to the filed of agricultural mechanical property and will use to construct unit cell model of each agricultural products and information of boundary will use for finite element analysis on unit cell image.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.5
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• pp.182-187
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• 2015

The growth and characterization of micro sized AlGaN array structures selectively grown by metal organic chemical vapor deposition (MOCVD) on GaN stripes are reported. The shape of the AlGaN array structures depends on the size of exposed area for selective growth. The AlGaN array structures grown selectively on relatively large exposed area have regular shapes resembling those of the GaN stripes on the substrate, while samples selectively grown on relatively small exposed area have irregular shapes. The phonon frequency of the AlGaN array structures increases with increasing Al composition in the AlGaN structure. However, at relatively high Al composition (x = 0.28 in this research), the phonon frequency decreases slightly from the expected value not only because of large tensile strain associated with large differences between the lattice constants of the AlGaN structure and underlying GaN stripes but also changes of crystal facet direction during the selective growth.