• Transactions on Electrical and Electronic Materials
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• v.9 no.5
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• pp.193-197
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• 2008

On the purpose of increasing resonant frequency without sacrificing quality factor as well as much decreasing dimensions, corrugated micro beam resonator based on polycrystalline 3C-SiC films is the applicable solution. In this work, appropriate corrugated structure is suggested to increase resonant frequency of resonators. Micro beam resonators based on 3C-SiC films which have a two-side corrugation along the length of beams were simulated by finite element method and compared to a same-size flat rectangular. With the dimension of 36x12x0.5 ${\mu}m^{3}$, the flat cantilever has resonant frequency of 746 kHz. Meanwhile, with this size but corrugation width of 6 ${\mu}m$ and depth of 0.4 ${\mu}m$, the corrugated cantilever reaches the resonant frequency at 1.252 MHz.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.467-472
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• 2007

A modern MEMS resonator is a micro-scale structure operated over a high frequency range. In order to predict its resonant behavior in a design process, High-frequency response analysis (Hi-FRA) is demanded. Algebraic substructuring (AS) is known as a fast numerical technique to construct an eigenspace for FR and frequency sweep (FS) algorithm efficiently solves the frequency response system projected on the eigenspace. However, the existing FS algorithm using AS is developed for low-FRA, say over the range 1Hz-2KHz. In this work, we extend the FS algorithm using AS for FRA over an arbitrary frequency range. Therefore, it can be efficiently applied to systems operated at a high frequency, say over the range 230MHz-250MHz. The success of the proposed method is demonstrated by Hi-FRA of a checkerboard resonator.

• Journal of Navigation and Port Research
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• v.28 no.4
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• pp.293-297
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• 2004

In this papers, an S-band oscillator of the low phase noise property using a miniaturized micro-strip hairpin shaped ring resonator is presented The substrate has a dielectric constant $\epsilon_\gamma$＝3.5, a thickness h＝0.508 mm, and loss tangent $tan\delta$＝0.002. A designed and fabricated oscillator shows low phase noise performance of 99. 71 dBc/Hz at 100 KHz offset frequency and of output power 19.584 dBm at center frequency 2.450 GHz. This circuit was fabricated with hybrid technique, but can be fully compatible with the MMIC due to its entirely planar structure.

• Current Optics and Photonics
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• v.5 no.6
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• pp.730-737
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• 2021

Transmission spectra are measured from waveguide-coupled ring resonators fabricated with SiN_x on SiO₂. By using ring resonators with various radii and several index contrasts, the behavior of the quality factors is investigated. As the index contrast decreases, the dominant loss is from scattering for a large resonator, while that changes from scattering loss to bending loss for a small resonator. We verify that the quality factor can be drastically improved by reducing the index contrast in large ring resonators.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.5
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• pp.223-228
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• 2018

In this paper the water sensor using a coaxial cavity resonator is designed and manufactured. The water sensor which can sense water drop linearly has been constructed with voltage controlled oscillator(VCO), coaxial cavity resonator, RF switch, RF detector, A/D converter, DAC and micro controller. The operating frequency range of the designed water sensor is from 2.5GHz to 3.2GHz and the input voltage and current source are 24[V/DC] and 1[A]. The designed sensor circuit includes VCO, RF switch, RF detector which varies the frequency characteristics of the devices in the high frequency of 3GHz. And so we should correct the error of the frequency characteristics of those devices in the sensor circuit. To do this, we make the reference path which switches the signals to the RF detector directly without sending it to the resonator. According to the result of simulation and measurement, we can see that there is 0-50MHz difference between simulated resonator frequency and manufactured resonator frequency.

• Journal of Sensor Science and Technology
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• v.8 no.1
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• pp.53-62
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• 1999

Micro polysilicon actuators, which are widely used in the field of MEMS (Microelectromechanical System) technology, were fabricated using polysilicon thin layers. Polysilicon deposition were carried out to have symmetrical layer structures with a LPCVD (Low Pressure Chemical Vapor Deposition) system, and we have measured physical characteristics by micro test patterns, such as bridges and cantilevers to verify minimal mechanical stress and stress gradient in the polysilicon layers according to the methods of mutilayer deposition, doping, and thermal treatment, also, analyzed the properties of each specimen, which have a different process condition, by XRD, and SIMS etc.. Finally, the fabricated planar polysilicon resonator, symmetrically stacked to $6.5{\mu}m$ thickness, showed Q of 1270 and oscillation ampitude of $5{\mu}m$ under DC 15V, AC 0.05V, and 1000 mtorr pressure. The developed micro polysilicon resonator can be utilized to micro gyroscope and accelerometer sensor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.217-217
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• 2009

This paper describes the characteristics of polycrystalline 3C-SiC doubly clamped beam micro resonators. The polycrystalline 3C-SiC doubly clamped beam resonators with 60 ~ 100 ${\mu}m$ lengths, $10\;{\mu}m$ width, and $0.4\;{\mu}m$ thickness were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonant frequency was measured by a laser vibrometer in vacuum at room temperature. For the 60 ~ 100 ${\mu}m$ long cantilevers, the fundamental frequency appeared at 373.4 ~ 908.1 kHz. The resonant frequencies of doubly clamped beam with lengths were higher than simulated results because of tensile stress. Therefore, polycrystalline 3C-SiC doubly clamped beam micro resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.303-306
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• 2009

This paper describes the characteristics of polycrystalline 3C-SiC doubly clamped beam micro resonators. The polycrystalline 3C-SiC doubly clamped beam resonators with $60{\sim}100{\mu}m$ lengths, $10{\mu}m$ width, and $0.4{\mu}m$ thickness were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonant frequency was measured by a laser vibrometer in vacuum at room temperature. For the $60{\sim}100{\mu}m$ long cantilevers, the fundamental frequency appeared at $373.4{\sim}908.1\;kHz$. The resonant frequencies of doubly clamped beam with lengths were higher than simulated results because of tensile stress. Therefore, polycrystalline 3C-SiC doubly clamped beam micro resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.250-250
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• 2008

This paper describes the resonant characteristics of polycrystalline SiC micro resonators. The $1{\mu}m$ thick polycrystalline 3C-SiC cantilevers with different lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at room temperature. For the 100 ~ $40{\mu}m$ long cantilevers, the fundamental frequency appeared at 147.2 kHz - 856.3 kHz. The $100{\mu}m$ and $80{\mu}m$ long cantilevers have second mode resonant frequency at 857.5 kHz and 1.14 MHz. Therefore, polycrystalline 3C-SiC micro resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

• Journal of Sensor Science and Technology
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• v.18 no.3
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• pp.207-209
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• 2009

This paper describes the characteristics of poly 3C-SiC micro resonators with $3{\times}10^{17}{\sim}1{\times}10^{19}cm^{-3}$ doping concentrations. The 1.2 ${\mu}m$ thick cantilever and the 0.4 ${\mu}m$ thick doubly clamped beam resonators with different lengths were fabricated using poly 3C-SiC thin films. The characteristics of poly 3C-SiC micro resonators were evaluated by quartz and a laser vibrometer in vacuum at room temperature. The resonant frequencies of micro resonators decreased with doping concentrations owing to reduction in the Young's modulus of poly 3C-SiC thin films. It was confirmed that the resonant frequencies of poly 3C-SiC resonators are controllable by doping concentrations. Therefore, poly 3C-SiC resonators could be applied to MEMS devices and bio/chemical sensor applications.