EFFECTS OF ${BF_2}^+$ -IMPLANTATION ON THE STRAIN-RELAXATION AND CURRENT LEAKAGE IN N-TYPE $Ge_{0.06}Si_{0.94}$ LAYERS ON Si(100)
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- 한국재료학회:학술대회논문집
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- 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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- pp.109.1-109
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- 1998