• 제목/요약/키워드: metal seed

검색결과 138건 처리시간 0.028초

Cu seed layer 표면의 플라즈마 전처리가 Cu 전기도금 공정에 미치는 효과에 관한 연구 (Effects of Plasma Pretreatment of the Cu Seed Layer on Cu Electroplating)

  • 오준환;이성욱;이종무
    • 한국재료학회지
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    • 제11권9호
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    • pp.802-809
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    • 2001
  • Electroplating is an attractive alternative deposition method for copper with the need for a conformal and conductive seed layer In addition, the Cu seed layer should be highly pure so as not to compromise the effective resistivity of the filled copper interconnect structure. This seed layer requires low electrical resistivity, low levels of impurities, smooth interface, good adhesion to the barrier metal and low thickness concurrent with coherence for ensuring void-free fill. The electrical conductivity of the surface plays an important role in formation of initial Cu nuclei, Cu nucleation is much easier on the substrate with higher electrical conductivities. It is also known that the nucleation processes of Cu are very sensitive to surface condition. In this study, copper seed layers deposited by magnetron sputtering onto a tantalum nitride barrier layer were used for electroplating copper in the forward pulsed mode. Prior to electroplating a copper film, the Cu seed layer was cleaned by plasma H$_2$ and $N_2$. In the plasma treatment exposure tome was varied from 1 to 20 min and plasma power from 20 to 140W. Effects of plasma pretreatment to Cu seed/Tantalum nitride (TaN)/borophosphosilicate glass (BPSG) samples on electroplating of copper (Cu) films were investigated.

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유리기판 위에 형성된 Al/Ni 및 TiW/Ni 다층 금속배선막의 계면 접합력 및 나노압입특성 평가 (Measurement of Adhesion Strength and Nanoindentation of Metal Interconnections of Al/Ni and TiW/Ni Layers Formed on Glass Substrate)

  • 조철민;김재호;황소리;윤여현;오용준
    • 대한금속재료학회지
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    • 제48권12호
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    • pp.1116-1122
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    • 2010
  • Metal interconnections of multilayer Al/Ni and TiW/seed-Ni/Ni were formed on glass, and the adhesion strength and nanoindentation response of the composite layers were evaluated. The Al/Ni multilayer was formed by an anodic bonding of glass to Al and subsequent electroless plating of Ni, while the TiW/Ni multilayer was fabricated by sputter deposition of TiW and seed-Ni onto glass and electroless plating of Ni. Because of the diffusion of aluminum into glass during the anodic bonding, anodically bonded glass/Al joint exhibited greater interfacial strength than the sputtered glass/TiW one. The Al/Ni on glass also showed excellent resistance against delamination by bending deformation compared to the TiW/seed-Ni/Ni on glass. From the nanoindentation experiment of each metal layer on glass, it was found that the aluminum layer had extremely low hardness and elastic modulus similar to the glass substrate and played a beneficial role in the delamination resistance by lessening stress intensification at the joint. The indentation data of the multilayers also supported superior joint reliability of the Al/Ni to glass compared to that of the TiW/seed-Ni/Ni to glass.

수종 초본식물의 중금속 내성에 대한 연구 (A Study on the Heavy Metal Tolerance in Several Herbaceous Plants)

  • Cho, Do-Soon;Joon-Ho Kim
    • The Korean Journal of Ecology
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    • 제18권1호
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    • pp.147-156
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    • 1995
  • Restoration of ecosystems degraded by heavy metal pollution can be accomplished by soil amendment and selection and utilization of plants tolerant to heavy metals. Two former zinc mine sites, Sambo Mine in Hwasung, Kyonggi-do and the Second Yonhwa Mine in Samchuk, Kangwon-do, were selected for collection of plant samples and for determination of heavy metal tolerant species. Dominant species on mine waste deposits in Hwasung site were Panicum bisulcatum and Echinoch/oa crus-galli, while those in Samchuk site were Aster yomena, Setaria viridis, Artemisia lavandulaefolia and Oenothera odorata. Mean contents of zinc, lead and cadmium in Hwasung soil were 103, 117 and 1 ppm, respectively, while those in Samchuk soil were 23, 6 and 4 ppm, respectively, Zinc contents were higher in Echinochloa crus-galli from Hwasung and in Artemisia lavandulaefolia from Samchuk, while lead contents were higher in Panicum bisulcatum and Echinochloa crus-galli from Hwasung and Lactuca sonchiJolia and Pinus densiJolia from Samchuk. Plant species with higher cadmium contents were Panicum bisulcatum and Lactuca sonchiJolia. Comparison of metal contents between roots and shoots showed that Echinochloa crus-galli was a zinc accumulator, while Panicum bisulcatum, Persicaria hydroPiPer, Pinus densiJlora and Lactuca sonchiJolia were zinc excluders. In addition, Panicum bisulcatum and Persicaria hydroPiPer were proved to be lead excluders. When both heavy metal contents in plant tissues and biomass of individual plants are considered, it can be concluded that Echinochloa crus-galli and Panicum bisulcatum from Hwasung and Artemisia lavandulaefolia and Aster yomena are heavy metal absorbing plants. The effect of heavy metals on seed germination showed that Artemisia princeps var. orientalis had higher germination rates, but no significant difference in concomitant decrease of germination rates among the species investigated were found by increasing heavy metal contents.

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마이크로웨이브 폴리올 공정에서 금속 도핑 산화아연 나노클러스터의 합성 (Synthesis of Metal Doped ZnO Nanoclusters by Microwave Assisted Polyol Process)

  • 권오산;강국현;이동규
    • 한국응용과학기술학회지
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    • 제31권3호
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    • pp.525-533
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    • 2014
  • 금속이 도핑 된 산화아연 나노클러스터를 합성하기 위해 마이크로웨이브를 이용한 폴리올 공정은 빠르고 경제적인 합성 방법이다. 디에틸렌글리콜은 높은 분극률과 마이크로파의 흡수 능력이 뛰어나며, 높은 온도상승 비율과 반응시간을 짧게 해준다. 본 연구에서는 금속이 도핑 된 산화아연 나노클러스터를 합성하기 위해서 첨가되는 seed의 부피비를 다르게 하여 얻었으며, 전구체로는 아세트산 아연 2수화물, 도핑 금속은 아세트산 금속 염을 그리고 용매로서 디에틸렌글리콜을 사용하였다. 금속이 도핑된 산화아연 클러스터는 FE-SEM, XRD, Raman, PSA로 특성을 확인하였다.

Sol-Gel 방법으로 제작된 SnO2 seed layer를 적용한 고반응성 ZnO 가스 센서 (High-sensitivity ZnO gas Sensor with a Sol-gel-processed SnO2 Seed Layer)

  • 김상우;박소영;한태희;이세형;한예지;이문석
    • 센서학회지
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    • 제29권6호
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    • pp.420-426
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    • 2020
  • A metal oxide semiconductor gas sensor is operated by measuring the changes in resistance that occur on the surface of nanostructures for gas detection. ZnO, which is an n-type metal oxide semiconductor, is widely used as a gas sensor material owing to its high sensitivity. Various ZnO nanostructures in gas sensors have been studied with the aim of improving surface reactions. In the present study, the sol-gel and vapor phase growth techniques were used to fabricate nanostructures to improve the sensitivity, response, and recovery rate for gas sensing. The sol-gel method was used to synthesize SnO2 nanoparticles, which were used as the seed layer. The nanoparticles size was controlled by regulating the process parameters of the solution, such as the pH of the solution, the type and amount of solvent. As a result, the SnO2 seed layer suppressed the aggregation of the nanostructures, thereby interrupting gas diffusion. The ZnO nanostructures with a sol-gel processed SnO2 seed layer had larger specific surface area and high sensitivity. The gas response and recovery rate were 1-7 min faster than the gas sensor without the sol-gel process. The gas response increased 4-24 times compared to that of the gas sensor without the sol-gel method.

레이저 직접묘화법에 의한 AlN 기판상의 전도성 패턴 제작에 관한 연구 (A Study on Fabrication of Conductor Patterns on AlN Ceramic Surface by Laser Direct Writing)

  • 이제훈;서정;한유희
    • 한국레이저가공학회지
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    • 제3권2호
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    • pp.25-33
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    • 2000
  • One of perspective direction of microfabrication is direct laser writing technology that allows to create metal, semiconductive and dielectric micropatterns on substrate surface. In this work, a two step method, the combination of seed forming process, in which metallic Al seed was selectively generated on AlN ceramic substrate by direct writing technique using a pulsed Nd : YAG laser and subsequent electroless Ni plating on the activated Al seed, was presented. The effects of laser parameters such as pulse energy, scanning speed and pulse frequency on shape of Alseed and conductor line after electroless Ni plating were investigated. The nature of the laser activated surface is analyzed from XPS data. The line width of this metallic Al and Ni is analyzed using SEM. As a results, Al seed line with 24㎛ width and 100㎛ isolated line space is obtained. Finally, laser direct writing can be applied in the field between thin and thick film technique in electronic industry.

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초전도 선재용 완충층의 결정성장 연구 (Epitaxial growth of buffer layers for superconducting coated conductors)

  • 정국채;유재무;김영국
    • 한국초전도ㆍ저온공학회논문지
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    • 제9권3호
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    • pp.5-8
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    • 2007
  • All three buffer layers of $Y_2O_3$, YSZ, and $CeO_2$ have been deposited on the biaxially textured metal substrates using rf-sputtering method, The first 50-70nm thick $Y_2O_3$ films were grown epitaxially on biaxially textured metal substrates as a seed layer and followed by the diffusion barrier ${\sim}100nm$ thick YSZ and subsequent capping layer ${\sim}200nm$ thick $CeO_2$ deposited epitaxially on top of $Y_2O_3$ seed layer. The epitaxial orientation of all three layers were all (100) grown with rocking curve Full Width at Half Maximum(FWHM) of $4-5^{\circ}$ and in plane phi-scan FWHM of $6-8^{\circ}$ using X -ray diffraction analysis. The NiO phases formed during the $Y_2O_3$ seed layer deposition seem to degrade the crystallinity and roughen the surface morphology of the following layer observed by AFM(Atomic Force Microscopy). The buffered tapes were used as substrates for long length YBCO coated conductors with high critical current density $J_c$. The five multi-turn of metal tapes was employed to increase the thickness of films and production rate to compensate the low growth rate of rf-sputtering method.

Au Catalyst Free and Effect of Ga-doped ZnO Seed Layer on Structural Properties of ZnO Nanowire Arrays

  • Yer, In-Hyung;Roh, Ji-Hyoung;Shin, Ju-Hong;Park, Jae-Ho;Jo, Seul-Ki;Park, On-Jeon;Moon, Byung-Moo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.354-354
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    • 2012
  • In this study, we report the vertically aligned ZnO nanowires by using different type of Ga-doped ZnO (GZO) thin films as seed layers to investigate how the underlying GZO film micro structure affects the distribution of ZnO nanowires. Arrays of highly ordered ZnO nanowires have been synthesized on GZO thin film seed layer prepared on p-Si substrates ($7-13{\Omega}cm$) with utilize of a pulsed laser deposition (PLD). With the vapor-liquid-solid (VLS) growth process, the ZnO nanowire synthesis carries out no metal catalyst and is cost-effective; furthermore, The GZO seed layer facilitates the uniform growth of well-aligned ZnO nanowires. The influence of the growth temperature and various thickness of GZO seed layer have been analyzed. Crystallinity of grown seed layer was studied by X-Ray diffraction (XRD); diameter and morphology of ZnO nanowires on seed layer were investigated by field emission scanning electron microscopy (FE-SEM). Our results suggest that the GZO seed layer with high c-axis orientation, good crystallinity, and less lattice mismatch is key parameters to optimize the growth of well-aligned ZnO nanowire arrays.

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폴리머용액법 및 알루미나 seed를 도입한 YAG:Ce3+ 형광체 분말 합성 (Synthesis of YAG:Ce3+ Phosphor Powders by Polymer Solution Route and Alumina Seed Application)

  • 김용현;이상진
    • 한국분말재료학회지
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    • 제20권1호
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    • pp.37-42
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    • 2013
  • $YAG:Ce^{3+}$ phosphor powders were synthesized using a $Al_2O_3$ seed (average particle size: 5 ${\mu}m$) by the polymer solution route. PVA solution was added to the sol precursors consisting of the seed powder and metal nitrate salts for homogeneous mixing in atomic scale. All dried precursor gels were calcined at $500^{\circ}C$ and then heated at $1400^{\circ}C{\sim}1500^{\circ}C$ in $N_2/H_2$ atmosphere. The final powders were characterized by using XRD, SEM, PSA, PL and PKG test. All synthesized powders were crystallized to YAG phase without intermediate phases of YAM or YAP. The phosphor properties and morphologies of the synthesized powders were strongly dependent on the PVA content. Finally, the synthesized $YAG:Ce^{3+}$ phosphor powder heated at $1500^{\circ}C$, which is prepared from 12:1 PVA content and has an average particle size of 15 ${\mu}m$, showed similar phosphor properties to a commercial phosphor powder.

Selective Growth of Nanosphere Assisted Vertical Zinc Oxide Nanowires with Hydrothermal Method

  • Lee, Jin-Su;Nam, Sang-Hun;Yu, Jung-Hun;Yun, Sang-Ho;Boo, Jin-Hyo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.252.2-252.2
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    • 2013
  • ZnO nanostructures have a lot of interest for decades due to its varied applications such as light-emitting devices, power generators, solar cells, and sensing devices etc. To get the high performance of these devices, the factors of nanostructure geometry, spacing, and alignment are important. So, Patterning of vertically- aligned ZnO nanowires are currently attractive. However, many of ZnO nanowire or nanorod fabrication methods are needs high temperature, such vapor phase transport process, metal-organic chemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy, thermal evaporation, pulse laser deposition and thermal chemical vapor deposition. While hydrothermal process has great advantages-low temperature (less than $100^{\circ}C$), simple steps, short time consuming, without catalyst, and relatively ease to control than as mentioned various methods. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using of nanosphere template with various precursor concentration and components via hydrothermal process. The brief experimental scheme is as follow. First synthesized ZnO seed solution was spun coated on to cleaned Si substrate, and then annealed $350^{\circ}C$ for 1h in the furnace. Second, 200nm sized close-packed nanospheres were formed on the seed layer-coated substrate by using of gas-liquid-solid interfacial self-assembly method and drying in vaccum desicator for about a day to enhance the adhesion between seed layer and nanospheres. After that, zinc oxide nanowires were synthesized using a low temperature hydrothermal method based on alkali solution. The specimens were immersed upside down in the autoclave bath to prevent some precipitates which formed and covered on the surface. The hydrothermal conditions such as growth temperature, growth time, solution concentration, and additives are variously performed to optimize the morphologies of nanowire. To characterize the crystal structure of seed layer and nanowires, morphology, and optical properties, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and photoluminescence (PL) studies were investigated.

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