• Title/Summary/Keyword: metal seed

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Removal Effect of Biostone and Green Tea on the Heavy Metal Toxicity during Seed Germination of Arabidopsis thaliana (애기장대의 종자 발아에 미치는 맥반석과 녹차의 중금속 제거 효과)

  • 박종범
    • Journal of Environmental Science International
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    • v.12 no.12
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    • pp.1303-1308
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    • 2003
  • This experiment was carried out to investigate the effects of heavy metals (cadmium, chromium, copper and lead) on the seed germination of Arabidopsis thaliana, and examinated the removal effects of biostone and green tea on the heavy metal toxicity. Cadmium and chromium among the four heavy metals had no effect on the seed germination even in the concentration fifty times higher than in the official standard concentration of pollutant exhaust notified by the Ministry of Environment. However, seeds were not germinated in the concentration of copper ten times higher and in the concentration of lead fifty times higher than the official standard concentration. When seeds were sown in the solutions of lead (15, 20, 25 and 30 mg/L) and copper(15 and 20 mg/L), the seed germination rates were 0% and less than 10%, respectively. However, when biostone(3 g/30 $m\ell$) was added, the seed germination rate was 100% in all the concentrations. The germination rate was 100% in distilled water and copper solution (5 mg/L). However, green tea (0.2 g/30 $m\ell$) was added, the seed germination rate was 0% in both. The results show that cadmiun and chromium had no effect on the seed germination, but lead and copper decreased the rate of seed germination of Arabidopsis thaliana, Biostone removed heavy metal toxicity, but green tea did not removed heavy metal toxicity during germination.

A Fundamental Study of Selective Metal Electroplating Without Seed Layers Using a Photosensitive Polyimide as Molds (감광성 폴리이미드를 모울드로 이용한 기반층이 없는 선택적 금속 도금에 관한 기초 연구)

  • Ahn, Dong-Sup;Lee, Sang-Wook;Kim, Ho-Sung;Kim, Yong-Kweon
    • Proceedings of the KIEE Conference
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    • 1993.11a
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    • pp.204-206
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    • 1993
  • In this paper we represented electroplating process without seed layers for making metal micro structures needed for applying terminal voltage for one-to-one cell fusion system. In this system, we need thick insulator and metal structures because the diameter of a cell is approximately $40{\mu}m$. So, we adopted the photo-sensitive polyimide as electroplating molds and structural material. Generally, the processes utilizing the photo-sensitive polyimide as molds have metal seed layers on the substrate as electroplating electrodes and requires wiring tasks to these seed layers. We proposed electroplating process without any seed layer on the Si-substrate and simulated P-N-P (electrode - Si substrate - electrode) junction on N-type silicon substrate. Leakage current from one metal structure to another which arise when terminal voltage is applied can be remarkably decreased by doping Boron in the region to be electroplated.

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Effect of Red Pepper Seed on Kimchi Antioxidant Activity During Fermentation

  • Sim, Ki-Hyeon;Han, Young-Sil
    • Food Science and Biotechnology
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    • v.17 no.2
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    • pp.295-301
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    • 2008
  • In this study, the antioxidant activities of red pepper seed kimchi extracts were examined. The extracts were evaluated by various antioxidant assays that included determinations of total phenolic and flavonoid contents, DPPH radical scavenging, superoxide anion radical scavenging, nitric oxide scavenging, superoxide dismutase (SOD) activity, metal chelating activity, and reducing power. All the kimchi extracts showed strong antioxidant activities by the tested methods. The 7% red pepper seed kimchi that was fermented for 6 days possessed the highest activity according to the performed tests. Yet, the highest scavenging activity was exhibited against nitrite, by extracts from kimchi for 0 day of fermentation rather than 6 days. All the activities for the kimchi fermented for 0 day with the addition of 7% red pepper seed increased markedly with an increase in concentration. With the exception of metal chelating and SOD activities, for the antioxidant properties assayed, the red pepper seed kimchi extracts were found to be highly effective.

Effect of Kind and Thickness of Seed Metal on the Surface Morphology of Copper Foil (Seed 금속의 종류와 두께에 따른 구리 전착층의 표면형상에 미치는 영향)

  • Woo, Tae-Gyu;Park, Il-Song;Seol, Kyeong-Won
    • Korean Journal of Materials Research
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    • v.17 no.5
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    • pp.283-288
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    • 2007
  • This study aimed to investigate the effects of the seed layer with copper electroplating on the surface morphology of copper foil. Three kinds of seed metal such as platinum, palladium, Pt-Pd alloy were used in this study. Electrodeposition was carried out with the constant current density of 200 $mA/cm^2$ for 68 seconds. Electrochemical experiments, in conjunction with SEM, XRD, AFM and four-point probe, were performed to characterize the morphology and mechanical characteristics of copper foil. Large particles were observed on the surface of the copper deposition layer when a copper foil was electroplated on the 130 nm thickness of Pd, Pt-Pd seed layer. However, a homogeneous surface, low resistivity was obtained when the 260 nm thickness of Pt, Pt-Pd alloy seed layer was used. The minimum value of resistivity was 2.216 ${\mu}{\Omega}-cm$ at the 260 nm thickness of Pt-Pd seed layer.

Improvement of dielectric and interface properties of Al/CeO$_2$/Si capacitor by using the metal seed layer and $N_2$ plasma treatment (금속씨앗층과 $N_2$ 플라즈마 처리를 통한 Al/CeO$_2$/Si 커패시터의 유전 및 계면특성 개선)

  • 임동건;곽동주;이준신
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.326-329
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    • 2002
  • In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.

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Synthesis and Applications of Noble Metal and Metal Silicide and Germanide 1-Dimensional Nanostructures

  • Yoon, Ha-Na;Yoo, Young-Dong;Seo, Kwan-Yong;In, June-Ho;Kim, Bong-Soo
    • Bulletin of the Korean Chemical Society
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    • v.33 no.9
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    • pp.2830-2844
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    • 2012
  • This review covers recent developments in our group regarding the synthesis, characterization and applications of single-crystalline one-dimensional nanostructures based on a wide range of material systems including noble metals, metal silicides and metal germanides. For the single-crystalline one-dimensional nanostructures growth, we have employed chemical vapor transport approach without using any catalysts, capping reagents, and templates because of its simplicity and wide applicability. Au, Pd, and Pt nanowires are epitaxially grown on various substrates, in which the nanowires grow from seed crystals by the correlations of the geometry and orientation of seed crystals with those of as-grown nanowires. We also present the synthesis of numerous metal silicide and germanide 1D nanostructures. By simply varying reaction conditions, furthermore, nanowires of metastable phase, such as $Fe_5Si_3$ and $Co_3Si$, and composition tuned cobalt silicides (CoSi, $Co_2Si$, $Co_3Si$) and iron germanides ($Fe_{1.3}Ge$ and $Fe_3Ge$) nanowires are synthesized. Such developments can be utilized as advanced platforms or building blocks for a wide range of applications such as plasmonics, sensings, nanoelectronics, and spintronics.

Application of the electroless plating method to the fabrication of metallic bus electrodes of PDP

  • Oh, Young-Joo;Jeung, Won-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.829-831
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    • 2003
  • In the present study, the electroless plating method was applied instead of the sputtering as a formation method of metallic bus electrodes. No additional blackening step is needed in this method since this process provides a metallic seed layer with black color by a single step. The parameters which affects color and morphology of the metallic seed layer in the electroless plating solution were investigated

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Metal nano-wire fabrication and properties (금속 나노와이어의 제조와 특성)

  • Hamrakulov, B.;Kim, In-Soo
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2009.05a
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    • pp.432-434
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    • 2009
  • Metal nano-wire arrays on Cu-coated seed layers were fabricated by aqueous solution method using sulfate bath at room temperature. The seed layers were coated on Anodic aluminum oxide (AAO) bottom substrates by electrochemical deposition technique, length and diameter of metal nano-wires were dominated by controlling the deposition parameters, such as deposition potential and time, electrolyte temperature. Anodic aluminum oxide (AAO) was used as a template to prepare highly ordered Ni, Fe, Co and Cu multilayer magnetic nano-wire arrays. This template was fabricated with two-step anodizing method, using dissimilar solutions for Al anodizing. The pore of anodic aluminum oxide templates were perfectly hexagonal arranged pore domains. The ordered Ni, Fe, Co and Cu systems nano-wire arrays were characterized by Field Emission Scanning Electron Microscopy (FE-SEM) and Vibrating Sample Magnetometer (VSM). The ordered Ni, Fe, Co and Cu systems nano-wires had different preferred orientation. In addition, these nano-wires showed different magnetization properties under the electrodepositing conditions.

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A Study of the Metal Recovery from the Aluminium Scrap (Al 스크랩으로부터 금속회수에 관한 연구)

  • 김준수;임병모;윤의박
    • Resources Recycling
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    • v.4 no.1
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    • pp.25-30
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    • 1995
  • In the preparatIon of reclaimed aluminium lllgot from alumimum scrap, the aluminium recovery was studied a as a function of the preliminary treatment of samples, addition of flux and melting atmosphere. AI dross is produced by an oxidation reaction at the surface of liquid metal. The recovery of AI metal increases u up to maximum 95% by adding salt up to 7%, The recovery of AI metal in the compacted chip bale without oil removal mcrease about 14% compared io non-compacted chip. In the case of the AI seed melting process, the recovery of Al metal of the crushed and compacted chip hale is 97%, In meltmg of alumimum scrap under the atmosphere of carbon and nitrogen gas, the recovery of AI metal increase, but it is decreased when the mixture of salt and carbon powder is added excessively.

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Control of Grain Size of PZT Thin Film through Seed Layers (Seed Layer를 통한 PZT 박막의 결정립 크기 조절)

  • Kim, Tae-Ho;Kim, Ji-Young;Lee, In-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.273-278
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    • 2000
  • In order to study effects of interface layers between PZT films and electrodes for MFM(Metal-Ferroelectric-Metal) structure capacitors, we have fabricated the capacitors with the Pt/PZT/interface-layer/Pt/$TiO_2/SiO_2/Si$ structure. $PT(PbTiO_3)$ interface layers were formed by sol-gel deposition and PbO, $ZrO_2$ and $TiO_2$ thin layers were deposited by reactive sputtering. $TiO_2$ interface layers result in the finest grains of PZT films compared to $PbO_2$ and $ZrO_2$ layers. On the other hand, PT interface layers result in improved morphology of PZT films and do not significantly change ferroelectric properties. It is also observed that seed layers at the middle and top of PZT films do not give significant effects on grain size but the PT seed layer at the interface between the bottom electrode and the PZT films results in the small grain size.

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