• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권5호
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• pp.264-267
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• 2004

Recently the pulsed power systems have been widely used in many fields such as E/P(Electrostatic Precipitator), DeNOx/DeSOx power systems, ozone generators and power sources of the laser beam. In this paper, we studied various electrical characteristics for arc suppression of line-to-line electrodes in air and removal of the metaloxide using our pulsed power system. To obtain high efficiency of the pulsed power system, we repeatedly experimented and tested their characteristics. by adjusting electrode length of the load. As a result, when the value of the electrode length and pulse repetition rate were changed at the load, the value of the arc voltage changed at the electrode load. In conclusion, we controlled arc voltage of the load by ,changing electrode length and pulse repetition rate. Also. we stydied removal area of the metaloxide using area discharge according to pulse repetition rate.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1600-1604
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.93-96
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• 환경위생공학
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• 제11권3호
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• pp.21-27
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• 1996

Chitosan is a natural polyelectrolytic compound. Researches of adsorption capacity using chitosan have been doing actively. We prepared bead type gel, simple modifier of chitosan, And then experimented adsorption test of heavy metals (Cd etc) using it. According to the result adsorption capacity of chitosan bead was five times higher than chitosan powder. Removal rate of cadmium resulted 90% over in the test that initial concentration of Cd was 100mg/L and bead dosage was 6g/100mL. Adsorption type of heavy metals was similar to general adsorption curve. And optical pH range was 4 - 10 in the adsorption test. In the experiments of other heavy metals (Pb, Zn, Cu, Mn) adsorption types had two stages, highly removal rate-stage at the short time (20minutes) and then slow rate-stage at the after. And removal efficiency at the variable pH ranges revealed relatively good.

• 한국지하수토양환경학회:학술대회논문집
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• 한국지하수토양환경학회 2003년도 총회 및 춘계학술발표회
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• pp.352-355
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• 2003

27 passive systems in 21 mines constructed by The Coal Industry Promotion Board since 1996 were investigated to evaluate the treatment efficiency of systems and find problems in each system, which will eventually lead to the improvement or suggesting the alternative method of the passive treatment system. Problems in operation include overflow, leakage, inefficiency and unusablness. The efficiency of systems which has been evaluated by metal(Fe) removal rate and/or by acidity removal rate do not reflect the poor removal rate of S $O_4$$^{2-}$. Especially high concentration of S $O_4$$^{2-}$ and high COD in the beginning of the operation would decrease the bacteria activity due to the lack of the nutrition. To solve the problem of overflow the upflow-type SAPS is being considered.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.389-392
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and non-uniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between particle size and CMP with particle size analysis of used slurry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.184-187
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) lyaer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2-CMP$ process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis or used slurry.

• 대한기계학회논문집A
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• 제28권11호
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• pp.1807-1812
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• 2004

The application of chemical mechanical polishing(CMP) has a long history. Recently, CMP has been used in the planarization of the interlayer dielectric(ILD) and metal used to form the multilevel interconnections between each layers. Therefore, much research has been conducted to understand the basic mechanism of the CMP process. CMP performed by the down force and the relative speed between pad and wafer with slurry is typical tribo-system. In general, studies have indicated that removal rate is relative to energy. Accordingly, in this study, CMP results will be analyzed by a viewpoint of the friction energy using friction force measurement. The results show that energy would not constant in the same removal rate conditions

• 대한환경공학회지
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• 제22권6호
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• pp.1021-1026
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• 2000

음이온계면활성제인 sodium di[2-ethylhexyl] sulfosuccinate(AOT)를 isooctane에 용해하여 조제한 W/O형 마이크로에멀젼을 이용하여 수용액중의 카드뮴, 구리 및 크롬 등의 중금속이온을 조작이 간단하고 효과적이며 대량으로 분리처리할 수 있는 시스템을 개발하였다. $Cd^{2+}$, $Cu^{2+}$ 및 $Cr^{3+}$는 W/O형 마이크로에멀젼에 의한 분리 후 3~7분 후에 평형에 도달하였고, 분리율과 분리속도는 수용액의 pH가 증가할수록 증가하였으며 $Cr^{6+}$ 는 전 pH 영역에서 분리제거가 되지 않았다. pH 3.5에서 $Cr^{3+}$는 5분 후에 90%이상 제거되었다. 분리속도식은 유사1차식으로 나타낼 수 있으며, 초기 물질전달계수(Jo)와 수용액 pH의 상관관계를 제시하였다.

• 공업화학
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• 제27권4호
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• pp.358-365
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• 2016

수자원의 효과적 활용을 위해 유해물질을 제거하는 기술이 중요하며 흡착이 하나의 경쟁력 있는 기술로 검토/개발되고 있다. 흡착공정이 경쟁력을 가지기 위해서는 뛰어난 성능의 흡착제 개발이 중요하다. 유기물과 무기물 모두를 함유한 금속-유기 골격체(metal-organic frameworks, MOFs)는 큰 표면적, 세공부피, 잘 정의된 세공 구조 및 용이한 기능화 등으로 인해 다양한 흡착에 활용되고 있다. 본 고에서는 MOFs를 이용하여 물로부터 유해한 유기물을 흡착제거하는 기술을 요약, 정리하였다. 단순히 흡착량이나 속도를 증가하는 연구 대신에 흡착질과 흡착제 간의 상호작용의 메커니즘을 요약하였고 이를 위해 MOFs를 수정/기능화한 연구를 정리하였다. 이러한 요약으로부터 독자들은 유해물질의 흡착제거를 위한 흡착제의 필요 물성 및 수정에 대해 이해를 하게 될 것이며 흡착 외에 유기물들의 저장 및 전달에 대한 새로운 아이디어를 얻을 수 있을 것으로 기대된다.