• 마이크로전자및패키징학회지
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• 제25권4호
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• pp.25-34
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• 2018

In this paper, we review the latest technical progress and commercialization of stretchable interconnectors, stretchable strain sensors, and stretchable substrates for stretchable electronics. The development of stretchable electronics can pave a way for new applications such as wearable devices, bio-integrated devices, healthcare and monitoring, and soft robotics. The essential components of stretchable electronic devices are stretchable interconnector and stretchable substrate. Stretchable interconnector should have high stretchability and high electrical conductivity as well as stability under severe mechanical deformation. Therefore several nanocomposite-based materials using CNT, graphene, nanowire, and metal flake have been developed. Geometric engineering such as wavy, serpentine, buckled and mesh structure has been well developed. Stretchable substrate should also pose high stretchability and compatibility with stretchable sensing or interconnecting material. We summarize the recent research results of new materials for stretchable interconnector and substrate as well as strain sensors. The Important challenges in development of the stretchable interconnector and substrate are also briefly discussed.

• 한국표면공학회지
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• 제56권2호
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• pp.160-168
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• 2023

Recently, investigation on metallization is a key for a stretchable display. Amorphous metal such as Ni and Zr based amorphous metal compounds are introduced for a suitable material with superelastic property under certain stress condition. However, Ni and Zr based amorphous metals have too high resistivity for a display device's interconnectors. In addition, these metals are not suitable for display process chemicals. Therefore, we choose an aluminum based amprhous metal Al-Mo as a interconnector of stretchable display. In this paper, Amorphous Forming Composition Range (AFCR) for Al-Mo alloys are calculated by Midema's model, which is between 0.1 and 0.25 molybdenum, as confirmed by X-ray diffraction (XRD). The elongation tests revealed that amorphous Al-20Mo alloy thin films exhibit superior stretchability compared to pure Al thin films, with significantly less increase in resistivity at a 10% strain. This excellent resistance to hillock formation in the Al20Mo alloy is attributed to the recessed diffusion of aluminum atoms in the amorphous phase, rather than in the crystalline phase, as well as stress distribution and relaxation in the aluminum alloy. Furthermore, according to the AES depth profile analysis, the amorphous Al-Mo alloys are completely compatible with existing etching processes. The alloys exhibit fast etch rates, with a reasonable oxide layer thickness of 10 nm, and there is no diffusion of oxides in the matrix. This compatibility with existing etching processes is an important advantage for the industrial production of stretchable displays.