• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.32-33
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• 1995

고집적 회로 제작에 사용되는 P-형 실리콘 웨이퍼 내부에 존재하는 금속불순물을 소수캐리어의 여기변화 등을 이용하는 정성적인 SPV 측정과 정량적인 DLTS 측정을 통해서 비교, 분석하였다. 반도체공정상 중요한 오염원이며, 분석이 쉬운 Fe을 주 오염원으로 하여 분석한 결과 SPV와 DLTS에 의한 Fe는 상호연관관계가 성립하며, p-형 실리콘 웨이퍼내의 Fe, FeB 거동을 20$0^{\circ}C$ quenching으로 관찰할 수 있었으며, 각각의 에너지준위는 0.45 및 0.11eV 임을 확인하였다.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.2305-2306
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• 2008

Charging of spacecraft occurs in plasma and radiation environment. Especially, we focused on an accident caused by internal charging in a glass material that was used as the cover plate of solar panel array, and tried to measure the charge distribution in glass materials under electron beam irradiation by using a PEA (Pulsed Electro-Acoustic method) system. In the case of a quartz glass (pure $SiO_2$), no charge accumulation was observed either during or after the electron beam irradiation. On the contrary, positive charge accumulation was observed in glass samples containing metal-oxide components. It is found that the polarity of the observed charges depends on the contents of the impurities. To identify which impurity dominates the polarity of the accumulated charge, we measured charge distributions in several glass materials containing various metal-oxide components and calculated the trap energy depths from the charge decay characteristics of all glass samples.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.422-423
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• 2006

Ultrasonic-milling of metal oxide nanopowders for the preparation of tungsten heavy alloys was investigated. Milling time was selected as a process variable. XRD results of metal oxide nanopowders ultrasonic-milled for 50 and 100h showed that mean crystallite size reduced with increasing milling time and there was no evidence of contamination or change of composition by impurities. It was found that nanocomposite powders reduced at $800^{\circ}C$ in $H_2$ atmosphere had a composition of 93.1W-4.9Ni-2.0Fe by EDX analysis. Hardness of sintered samples of 50 and 100h was 390 and 463 Hv, respectively, which corresponds to the hardness of commercial products.

• Journal of the Korean Chemical Society
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• v.44 no.3
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• pp.200-206
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• 2000

The metal impurities in specific regions at near surface of silicon wafer were determined by constant depth etching·lt is possible to etch uniformly over the entire wafer surface by 1$\mu\textrm{m}$ depth with 5 mL of etching solution made up of HF and HNO$_3$ mixed by l:3 volume ratio. The microwave oven was used to evaporate the solution after etching. After spiking, The recoveries of Cu, Ni, Zn, Cr, Mg and K were found to be 99∼105%ted in polysilicon region and could be quantified by 1$\mu\textrm{m}$ depth.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.95-95
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• 2014

An OLED(Organic Light-Emitting Diode) device based on the emissive electroluminescent layer a film of organic materials. OLED is used for many electronic devices such as TV, mobile phones, handheld games consoles. ULVAC's mass production systems are indispensable to the manufacturing of OLED device. ULVAC is a manufacturer and worldwide supplier of equipment and vacuum systems for the OLED, LCD, Semiconductor, Electronics, Optical device and related high technology industries. The SMD Series are single-substrate sputtering systems for deposition of films such as metal films and TCO (Transparent Conductive Oxide) films. ULVAC has delivered a large number of these systems not only Organic Evaporating systems but also LTPS CVD systems. The most important technology of thin-film encapsulation (TFE) is preventing moisture($H_2O$) and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass substrate, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This report provides a review of promising thin-film barrier technologies as well as the WVTR(Water Vapor Transmission Rate) properties. Multilayer thin-film deposition technology of organic and inorganic layer is very effective method for increasing barrier performance of OLED device. Gases and water in the organic evaporating system is having a strong influence as impurities to OLED device. CRYO pump is one of the very useful vacuum components to reduce above impurities. There for CRYO pump is faster than conventional TMP exhaust velocity of gases and water. So, we suggest new method to make a good vacuum condition which is CRYO Trap addition on OLED evaporator. Alignment accuracy is one of the key technologies to perform high resolution OLED device. In order to reduce vibration characteristic of CRYO pump, ULVAC has developed low vibration CRYO pumps to achieve high resolution alignment performance between Metal mask and substrate. This report also includes ULVAC's approach for these issues.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.13-19
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• 1999

Total reflection X-ray fluorescence spectroscopy using synchrotron radiation source called as TRSFA was explored to achieve high sensitivities to impurity metals on Si wafer surface. It consists of monochromating part to select a specific wavelength, slit part to shield direct beam and to control monochromated beam, and main chamber to dectect fluorescent X-ray counts of impurities on si wafer. Monochromated X-ray of 10.90 KeV was selected and the optimum total reflection condition on silicon wafer was obtained through tuning the dead time and fluorescent X-ray count of Si and Fe. TRSFA system could increase the sensitivity as high as 50 times in comparision with TRXFA using normal X-ray source. But the trend was varied since the surface conditions of Si wafers and, therefore, the reflectivities were different. Furthemore, there seems to be a promising path to reaching a detection limit useful to the next generation metal impurities control, because Fe impurity below to the $5\times10^{9}\textrm{atomas/cm}^2$ can be detectable through the developed TRSFA system.

• Resources Recycling
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• v.7 no.4
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• pp.64-75
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• 1998

The purpose of this study is to produce high putity composite powder composed of Fe-oxide, Mn-oxide and Mn-ferrite having superior homogencity in composition and particle size distribution by co-roasting process. Binary component metal (Fe, Mn) chloride solutions were produced by dissolving mill scale and ferro-mangancse alloy in hydrochloric acid. These chloride solutions contained the impurities such as SiO$_{2}$, P, Al, Ca and Na, which were originated from the Fe/Mn source materials. The neutralization and polymeric coagulant method were adoped to refine the hydrochloric liquor. When pH is far below the isoelectric point (pH 2-3), the SiO$_{2}$ was the most effectively reduced element, while other impurities remained unchanged. By increasing pH above 3, most of the impurities could be reduced effectively due to the coprecipitation reaction. The polymeric coagulants such as poly vinyl alcohol, resin amine and ammonium molybdate were found to have no effect on the spray roaster designed by the authors. The produced oxide powders were confirmed to be mixtures of Fe-oxide, Mn-oxide and mn-ferrite. the powders were homogeneously mixed and the particle size increased sleeply with increasing co-roasting temperature.

• Journal of Radiopharmaceuticals and Molecular Probes
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• v.5 no.1
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• pp.48-53
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• 2019

A bone metastasis is an important factor for prognosis and treatment of breast or prostate cancer patients. [$^{18}F$]Sodium fluoride ([$^{18}F$]NaF) is a PET radiopharmaceutical that can detect bone metastasis. Conventional [$^{18}F$]NaF production process included radioactive metal impurities because the product was prepared by adding saline after beam irradiation to $[^{18}O]H_2O$. In this study, we apply the method of removing radionuclidic impurities. To meet the criteria prescribed by GMP in quality control, we designed the custom-made [$^{18}F$]NaF automatic module. The mean radiochemical yield was $82.1{\pm}4.4%$ (n = 32) productions for 3 years) and the total preparation time was 4 min. The final produced [$^{18}F$]NaF solution meets the USP criteria for quality control. Thus, this fully automated system is validated for clinical use.

• Resources Recycling
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• v.15 no.5 s.73
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• pp.26-32
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• 2006

The waste solution discharged from the LCD manufacturing process contains acids like nitric, acetic and phosphoric acid and metal ions such as Al, Mo and other impurities. It is important to remove impurities less than 1 ppm in phosphoric acid to reuse as an etchant because the residual impurities even in sub-ppm concentration in semiconductor materials play a major role on the electronic properties. In this study, a mixed system of solvent extraction, diffusion dialysis and ion-exchange was developed to commercialize in an efficient system fur recovering the high-purity phosphoric acid. By vacuum evaporation, almost 99% of nitric and acetic acid was removed. And by solvent extraction method with tri-octyl phosphate (TOP) as an extractant, the removal of acetic and nitric acid from the acid mixture was achieved effectively at the ratio A/O=1/3 with 4th stage of extraction stage. About 97.5% of Al and 36.7% of Mo were removed by diffusion dialysis. Essentially almost complete removal of metal ions and purification of high-purity phosphoric acid could be obtained by using ion exchange.

• Journal of Surface Science and Engineering
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• v.31 no.6
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• pp.371-378
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• 1998

The zind bate contaminated in the hot dip galvannealed operation was successfully by appling the dross formation mechanism ; the Fe content was lowered from 0.028% to 0.011% and the dress size was decreased from 15~20$\mu\textrm{m}$ to under 3$\mu\textrm{m}$. The cooled metal from CGL zinc bath during operation of the galvannealed steel strip was remelted in graphite crucible at the lab and agitated after increasing Al content from 0.14% to 0.16% with decreasing the molten metal temperature from $470^{\circ}C$to $445^{\circ}C$. The agitating was done by agitator and nitrogen. The molten was analyed by SEM and EDS. It was considered that the Fe and the bottom dross($FeZN_7$) could react with aluminium to from the float dress($Fe_2Al_5$) according to the molten metal temperature down and the float dress rise to the surface of the zine bath. So the Fe and dross in the bath could be romoved out of the bath. It was confirmed that the proper purication conditions of GA zine bath is 0.02% of Al increasing, bath temperature down from $460^{\circ}C$ to $450^{\circ}C$and agitator and nitrogen.