• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.261-261
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• 2010

In electric railways, high speed trains are normally supplied by AC 25kV power by contact between a pantograph contact strip and a contact wire. Advanced railway operating countries are actively researching various areas for the development of contact strips due to the reason that the properties of contact strips are one of the key factors of electric railways. This paper applied nano technology which is rapidly growing in many areas to the contact strip of a pantograph for current collection performance improvement considering speed up of electric railways. In detail, this paper proposes a method to dope nano particles of metal to a Korea Train eXpress(KTX) carbon pantograph and its measurement results. It is expected that the contents of this paper be used for preliminary study of high-speed railway current collection technologies.

• 한국전기전자재료학회논문지
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• 제31권2호
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• pp.74-79
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• 2018

In this report, the results of a systematic study on the effects of polycrystalline silicon gate depletion on the reliability characteristics of metal-oxide semiconductor field-effect transistor (MOSFET) devices were discussed. The devices were fabricated using standard complimentary metal-oxide semiconductor (CMOS) processes, wherein phosphorus ion implantation with implant doses varying from $10^{13}$ to $5{\times}10^{15}cm^{-2}$ was performed to dope the polycrystalline silicon gate layer. For implant doses of $10^{14}/cm^2$ or less, the threshold voltage was increased with the formation of a depletion layer in the polycrystalline silicon gate layer. The gate-depletion effect was more pronounced for shorter channel lengths, like the narrow-width effect, which indicated that the gate-depletion effect could be used to solve the short-channel effect. In addition, the hot-carrier effects were significantly reduced for implant doses of $10^{14}/cm^2$ or less, which was attributed to the decreased gate current under the gate-depletion effects.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.629-632
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• 1999

For replacing Li metal ai Lithium ton Bakery(LIB) system. we used carbon powder material which prepared by pyrolysis of phenol resin as starting material. It became amorphous carbon by pyrolysis through it\`s self condensation by thermal treatment. Amorphous carbon can be doped with Li intercalation and deintercalation because it has wide interlayer. however it has a problem with structural destroy causing weak carbon-carbon bond. So. we used ZnCl$_2$ as the pore-forming agent. This inorganic salt used together with the resin serves not only as the pore-forming agent to form open pores, which grow Into a three-dimensional network structure in the cured material, foul also as the microstructure-controlling agent to form a loose structure dope with bulky dopants. We analyzed SEM in order to find to different of structure. and can calculate distance of interlayer. CV test showed oxidation and reduction

• 공업화학
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• 제26권6호
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• pp.681-685
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• 2015

본 연구에서는 열 변색 물질로 알려진 순수한 $BiVO_4$ 분말과 금속이 도핑된 $M-BiVO_4$ (M = Mg, Cu) 분말들을 bismuth nitrate ($Bi(NO_3)_3$)와 ammonium vanadate ($NH_4VO_3$)의 혼합 수용액으로부터 고압반응기에서 수열 합성법을 통하여 성공적으로 제조하였다. 시료들의 결정구조, 미세구조 및 열 변색 특성들은 FE-SEM, FT-IR, XRD, DSC, UV-Vis-NIR 분광기 및 colorimeter를 이용하여 분석하였다. 시료를 상전이 온도 이상으로 가열시키면, 순수한 $BiVO_4$ 시료에 비하여 $M-BiVO_4$ (M = Mg, Cu) 시료의 색상이 상대적으로 선명하게 열 변색하였다.

• 전기학회논문지
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• 제60권6호
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• pp.1169-1174
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• 2011

CdTe thin-film solar cell technology is well known that it can theoretically improve its conversion efficiency and manufacturing costs compared to the conventional silicon solar cell technology, due to its optical band gap energy (about 1.45eV) for solar energy absorption, high light absorption capability and low cost requirements for producing solar cells. Although the prior studies obtained the high light absorption, CdTe thin film solar cell has not been come up to the sufficient efficiency yet. So, doping method was selected for the improvement of the electrical characteristics in CdTe solar cells. Some elements including Cu, Ag, Cd and Te were generally used for the p-dopant as substitutional acceptors in CdTe thin film. In this study, the sputtering-deposited CdTe thin film was immersed in $AgNO_3$ solution for ion exchange method to dope Ag ions. The effects of immersion temperature and Ag-concentration were investigated on the optical properties and electrical characteristics of CdTe thin film by using Auger electron spectroscopy depth-profile, UV-visible spectrophotometer, and a Hall effect measurement system. The best optical and electrical characteristics were sucessfully obtained by Ag doping at high temperature and concentration. The larger and more uniform diffusion of Ag ions made increase of the Ag ion density in CdTe thin film to decrease the series resistance as well as mede the faster diffusion of light by the metal ions to enhance the light absorption.