• 한국재료학회지
• /
• 제28권4호
• /
• pp.195-200
• /
• 2018

This study investigated the effects of the post annealing temperatures on the electrical and interfacial properties of a metal-semiconductor-metal photodetector(MSM-PD) device. The interdigitate type MSM-PD devices had the structure Al(500 nm) / Ti(200 nm) / poly-Si(500 nm). Structural analyses of the MSM-PD devices were performed by employing X-ray diffraction(XRD), scanning electron microscopy(SEM) and transmission electron microscope(TEM). Electrical characteristics of the MSM-PD were also examined using current-voltage(I-V) measurements. The optimal post annealing condition for the Schottky contact of MSM-PD devices are $350^{\circ}C$-30minutes. However, as the annealing temperature and time are increased, electrical characteristics of MSM-PD device are degraded. Especially, for the annealing conditions of $400^{\circ}C$-180minutes and $500^{\circ}C$-30minutes, the I-V measurement itself was impossible. These results are closely related to the solid phase reactions at the interface of MSM-PD device, which result in the formation of intermetallic compounds such as $Al_3Ti$ and $Ti_7Al_5Si_{12}$.

• Journal of Korean Vacuum Science & Technology
• /
• 제6권3호
• /
• pp.126-132
• /
• 2002

The origin of image-sticking in metal-insulator-metal type thin-film diode liquid crystal displays(TFD-LCDs) is the asymmetric current-voltage(I-V) characteristic of TFD element. We developed that TFD-LCDs have reduced-image-sticking. Tantalum pentoxide(Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal(MIM) capacitors in switching devices for active-matrix liquid crystal displays(AM-LCDs). High quality Ta$_2$O$\sub$5/ thin films have been obtained from anodizing method. We fabricated a TFD element using Ta$_2$O$\sub$5/ films which had perfect current-voltage symmetry characteristics. We applied novel process technologies which were postannealed whole TFD element instead of conventional annealing to the fabrication. One-Time Post-Annealing(OPTA) heat treatment process was introduced to reduce the asymmetry and shift of the I-V characteristics, respectively. OPTA means that the whole layers of lower metal, insulator, and upper metal are annealed at one time. Futhermore, in this paper, we discussed the effects of top-electrode metals and annealing conditions.

• 전자공학회논문지A
• /
• 제30A권7호
• /
• pp.47-59
• /
• 1993

16M DRAM 용 Al/Si contact 의 열적안정성을 개선하기 위하여 "stuffed" TiN/Ti diffusion barrier를 사용하였다. Diffusion barrier 로서의 특성을 개선하기 위한 Al 증착전 TiN/Ti barrier metal의 열처리 과정중 barrier metal의 두께, 열처리온도, 분위기 등을 변화시켰다. 질소분위기하에서 450도에서 TiN(900A)/Ti(300A) 박막을 열처리 하여 "stuffed" barrier metal을 형성 시켰을 경우 Al 원자의 TiN층으로의 확산의 600도에서 후속열처리한 경우 일어났으나, 700도까지도 Al-spike를 관찰할 수 없었다. 그러나 "stuffed" barrier metal을 550도에서 형성한 경우에는 600도의 후속열처리온도에서 Al이 Si 기판으로 침투했음을 관찰하였다. 박막의 두께를 얇게한 경우, 600도의 후속 열처리에서 Al-spike가 형성되었음을 확인하였다.

• Journal of the Optical Society of Korea
• /
• 제20권1호
• /
• pp.130-134
• /
• 2016

The influence of Au/Ni-based contact formed on a lightly-doped (7.3×1017cm−3, Zn-doped) InGaAsP layer for electrical compensation of surface plasmon polariton (SPP) propagation under various rapid thermal annealing (RTA) conditions has been studied. The active control of SPP propagation is realized by electrically pumping the InGaAsP multiple quantum wells (MQWs) beneath the metal planar waveguide. The metal planar film acts as the electric contact layer and SPP waveguide, simultaneously. The RTA process can lower the metal-semiconductor electric contact resistance. Nevertheless, it inevitably increases the contact interface morphological roughness, which is detrimental to SPP propagation. Based on this dilemma, in this work we focus on studying the influence of RTA conditions on electrical control of SPPs. The experimental results indicate that there is obvious degradation of electrical pumping compensation for SPP propagation loss in the devices annealed at 400℃ compared to those with no annealing treatment. With increasing annealing duration time, more significant degradation of the active performance is observed even under sufficient current injection. When the annealing temperature is set at 400℃ and the duration time approaches 60s, the SPP propagation is nearly no longer supported as the waveguide surface morphology is severely changed. It seems that eutectic mixture stemming from the RTA process significantly increases the metal film roughness and interferes with the SPP signal propagation.

• 한국세라믹학회지
• /
• 제53권4호
• /
• pp.450-455
• /
• 2016

Color change in single-crystal, yellow, red, purple, and colorless cubic zirconias (CZs) was investigated as a function of annealing in vacuum and air atmosphere at $800-1400^{\circ}C$ for 30 min, for development of a damascene process of plugging a precious metal paste at the elevated temperature. Coloring-element contents of the CZs were evaluated using WD-XRF, and the color change determined visually by naked eye, and using a digital camera and UV-Vis-NIR color analyzer. WD-XRF showed that all of the CZs had cubic-phase stabilizer elements and coloring elements. All CZs that underwent vacuum annealing exhibited a slight color change at $<900^{\circ}C$, while their colors began to change to black at $1100^{\circ}C$, and became opaque black at $1400^{\circ}C$. After air annealing, there was almost no color change up to $1400^{\circ}C$. Since red and purple CZs showed greater color difference (CD) values than the others, the degree of CD is likely to depend on the original color of the CZ due to the different stabilities of their coloring elements during annealing. Based on our results, it is suggested that annealing in air at $<900^{\circ}C$ is advantageous, and assorted colored CZs can be used for precious metal damascene.

• 한국전기전자재료학회논문지
• /
• 제14권12호
• /
• pp.1016-1022
• /
• 2001

This study presents the microstructure-electrical property relationship of reactive-sputtered Ta$_2$O$_{5}$ MIM capacitor structure processed by annealing in a vacuum and $O_2$ ambience. A microstructural investigation showed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-Ta$_2$O$_{5}$ in $700^{\circ}C$ annealing. On annealing under the $O_2$ atmosphere, the Ta$_2$O$_{5}$ film exhibited the trend of its composition\`s approaching to stoichiometry from off-stoichiometry, analyzed by EPMA, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. In the case of low temperature vacuum-annealing treatment, the leakage current behavior was stable irrespective of applied electric field. In the high temperature-annealed film at a vacuum condition, the electrical properties was observed to deteriorate. The results state that in Ta$_2$O$_{5}$ film annealed at $O_2$ atmosphere, gives rise to improvement of electrical characteristics in the capacitor were improved by reducing oxygen-vacancy and dandling Ta-O bond.-O bond.

• 한국정밀공학회지
• /
• 제18권12호
• /
• pp.167-176
• /
• 2001

The effects of heat treatments and testing temperatures on the mechanical properties of Invar materials were investigated through experiments, which call influence the formability in metal forming fields. Annealing temperatures were changed from $900^{\circ}C$ to $1200^{\circ}C$ with an increment of $100^{\circ}C$ under two different furnace atmosphere(vacuum and H$_2$gas). Microstructure and hardness tests were performed for annealed specimens at room temperature(RT) and tensile tests were also performed by changing annealing temperatures as well as testing temperatures from RT to $300^{\circ}C$. The grain size of annealed materials increased with increasing annealing temperature, while micro-hardness distributions showed almost same hardness values regardless of annealing temperatures. Strength ratio (tensile/yield strength), which influences the forming characteristics of sheet metal, remained almost constant for various experimental conditions in case of unannealed specimens. However, it showed increasing tendency with increasing both annealing and testing temperatures, particularly at the testing temperature higher than $200^{\circ}C$. Therefore it can be concluded that press formability of fully-annealed Invar material can be improved by warm forming technique.

• 한국세라믹학회지
• /
• 제36권6호
• /
• pp.604-610
• /
• 1999

Silicide layer structures and morphology degradation of the surface and interface of the silicide layers for he Co/refractory metal bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The CoSi-CoSi2 phase transition temperature is lower an morphology degradation of the silcide layer occurs more severely for the Co/refractorymetal bilayer on the P-doped polycrystalline Si substrate than on the single Si substrate. Also the final layer structure and the morphology of the films after silicidation annealing was found to depend strongly upon the interlayer metal. The layer structure after silicidation annealing of Co/Hf/doped-poly Si is Co-Hf alloy/polycrystalline CoSi2/poly Si substrate while that of Co/Nb is polycrystalline CoSi2/NbSi2/polycrystalline CoSi2/poly Si.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
• /
• pp.745-748
• /
• 2007

Hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) were fabricated on a flexible metal substrate at $150\;^{\circ}C$. To increase the stability of the flexible a-Si:H TFTs, they were thermally annealed at $230\;^{\circ}C$. The field effect mobility was reduced because of the strain in a- Si:H TFT under thermal annealing.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.140.1-140.1
• /
• 2013

The native silicon-oxide (SiOx) layer at the metal/Silicon interface acts as an electrical resistance to the metal contact of devices. Various methods are proposed for removing this layer, such as sputtering before metal contact formation or high temperature annealing. We studied the chemical evolution of the Au/SiOx/Si system during the annealing at $500^{\circ}C$ using a spatially resolved photoelectron emission method. Scanning photoelectron emission microscopy (SPEM) and core level spectra from local area of the sample show the inhomogeneous oxidation and formation of silicide of Au, as well as valence band spectra reveals the role of Au atoms during the dissociation process of SiOx.