• Journal of KIISE:Computing Practices and Letters
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• v.14 no.8
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• pp.758-762
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• 2008

Embedded systems usually utilize Flash Memories with very nice characteristics of non-volatility, low access time, low power and so on. For the multimedia database systems, R-tree is an indexing tree with nice characteristics for multimedia access. MR-tree, which is an upgraded version of R-tree, has shown better performance in searching, inserting and deleting operations than R-tree. Flash memory has sectors and blocks as a unit of read, write and delete operations. Especially, the delete is done on a unit of 512 byte blocks with very large operation time and it is also known that read and write operations on a unit of block matches caching nature of MT-tree. Our research optimizes MR-tree operations in a unit of Flash memory blocks. Such an adjusting leads in better indexing performance in database accesses. With MR-tree on a 512B block units we achieved fast search time of database indexing with low height of MR-tree as well as faster update time of database indexing with the best fit of flash memory blocks. Thus MR-tree with optimized operations shows good characteristics to be a database index schemes on any systems with flash memory.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.256-257
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• 2006

3D printing of NiTi alloys has been successfully achieved. A novel printing process has been developed and used, which consists in selective deposition of a solvent on a granule bed. The granules are composed of metal powders and thermoplastic binder, which are mixed and sieved by conventional methods. A sound green strength is obtained after solvent evaporation. Sintered parts exhibit good density, proper phase composition and shape memory behaviour.

• Journal of KIISE:Computing Practices and Letters
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• v.15 no.1
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• pp.1-13
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• 2009

Flash memory is widely used as a storage medium of mobile devices such as MP3 players, cellular phones and digital cameras due to its tiny size, low power consumption and shock resistant characteristics. Currently, there are many studies to replace HDD with flash memory because of its numerous strong points. To use flash memory as a storage medium, FTL(Flash Translation Layer) is required since flash memory has erase-before-write constraints and sizes of read/write unit and erase unit are different from each other. Recently, new type of flash memory called "large block flash memory" is introduced. The large block flash memory has different physical structure and characteristics from previous flash memory. So existing FTLs are not efficiently operated on large block flash memory. In this paper, we propose an efficient FTL for large block flash memory based on FAST(Fully Associative Sector Translation) scheme and page-level mapping on data blocks.

• Journal of Advanced Marine Engineering and Technology
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• v.33 no.1
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• pp.131-137
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• 2009

In this paper, we have manufactured hole type PRAM unit cell using phase change material $Ge_2Sb_2Te_5$. The phase change material $Ge_2Sb_2Te_5$ was deposited on hole of 500 nm size using sputtering method. Reset current of PRAM unit cell was confirmed by measuring R-V characteristic curve. Reset current of manufactured hole type PRAM unit cell is 15 mA, 100 ns. And electro and thermal characteristics of hole type PRAM unit cell were analyzed by 3-D finite element analysis. From simulation temperature of PRAM unit cell was $705^{\circ}C$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.458-464
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• 2017

A magnetic tunnel junction (MTJ) based ternary content addressable memory (TCAM) is proposed which provides non-volatility. A unit cell of the TCAM has two MTJ's and 4.875 transistors, which allows the realization of TCAM in a small area. The equivalent resistance of parallel connected multiple unit cells is compared with the equivalent resistance of parallel connected multiple reference resistance, which provides the averaging effect of the variations of device characteristics. This averaging effect renders the proposed TCAM to be variation-tolerant. Using 65-nm CMOS model parameters, the operation of the proposed TCAM has been evaluated including the Monte-Carlo simulated variations of the device characteristics, the supply voltage variation, and the temperature variation. With the tunneling magnetoresistance ratio (TMR) of 1.5 and all the variations being included, the error probability of the search operation is found to be smaller than 0.033-%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.48-51
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• 1991

Short channel Nonvolatile EEPROM memory devices were fabricated to CMOS 1M bit design rule, and reviews the characteristics and applications of SNOSFET. Application of SNOS field effect transistors have been proposed for both logic circuits and nonvolatile memory arrays, and operating characteristics with write and erase were investigated. As a results, memory window size of four terminal devices and two terminal devices was established low conductance stage and high conductance state, which was operated in “1” state and “0”state with write and erase respectively. And the operating characteristics of unit cell in matrix array were investigated with implementing the composition method of four and two terminal nonvolatile memory cells. It was shown that four terminal 2${\times}$2 matrix array was operated bipolar, and two termineal 2${\times}$2 matrix array was operated unipolar.

• Journal of the Korea Society of Computer and Information
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• v.24 no.8
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• pp.9-17
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• 2019

In this paper, we propose a block mapping technique applicable to NAND flash memory. In order to use the NAND flash memory with the operating system and the file system developed on the basis of the hard disk which is mainly used in the general PC field, it is necessary to use the system software known as the FTL (Flash Translation Layer). FTL overcomes the disadvantage of not being able to overwrite data by using the address mapping table and solves the additional features caused by the physical structure of NAND flash memory. In this paper, we propose a new mapping method based on the block mapping method for efficient use of the NAND flash memory. In the case of the proposed technique, the data modification operation is processed by using a blank page in the existing block without using an additional block for the data modification operation, thereby minimizing the block unit deletion operation in the merging operation. Also, the frequency of occurrence of the sequential write request and random write request Accordingly, by optimally adjusting the ratio of pages for recording data in a block and pages for recording data requested for modification, it is possible to optimize sequential writing and random writing by maximizing the utilization of pages in a block.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.3A
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• pp.337-346
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• 2004

Punctured convolutional codes increase transmission efficiency without increasing hardware complexity. However, Viterbi decoder supporting punctured codes requires long decoding length and large survivor memory to achieve sifficiently low bit error rate (BER), when compared to the Viterbi decoder for a rate 1/2 convolutional code. This Paper presents novel architecture adopting a pipelined trace-forward unit reducing survivor memory requirements in the Viterbi decoder. The proposed survivor path architecture reduces the memory requirements by removing the initial decoding delay needed to perform trace-back operation and by accelerating the trace-forward process to identify the survivor path in the Viterbi decoder. Experimental results show that the area of survivor path unit has been reduced by 16％ compared to that of conventional hybrid survivor path unit.

• Journal of Ginseng Research
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• v.31 no.1
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• pp.34-43
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• 2007

Background: Previous research has suggested that single doses of a standardised Panax ginseng extract can decrease fasted blood-glucose levels and modulate cognitive performance in healthy young volunteers. The latter has generally been seen in terms of improved secondary memory performance. However, both the cognitive effects of chronic administration of ginseng and the potential modulation of working memory have received comparatively little research attention. Aims: The current double-blind, placebo-controlled, balanced cross-over study investigated the effects of 8-weeks administration of Korean ginseng extract (200 mg) on cognitive performance, gluco-regulatory parameters and ratings of subjective mood and 'quality of life'. Methods: 'Eighteen healthy young participants were assessed pre-dose and 3 hours post-dose on the mornings of Day 1, Day 29 and Day 57 of 8 week treatment regimens of both placebo and ginseng. A four-week placebo wash-out separated the treatment phases. Each assessment included the Cognitive Drug Research battery, computerised working memory tasks, and Bond-Lader mood scales. The WHO Quality of Life scale (WHOQOL-BREF) was completed once per visit. Gluco-regulatory parameters were assessed with assays of blood glucose, insulin and HbA1c. Results: Data from the 16 participants that completed the study showed that there were no significant, acute treatment related differences on Day 1 of treatment, or in gluco-regulatory parameters throughout the study. However, time related performance improvements were evident following chronic administration of ginseng on the '3-Back' and 'Corsi-block' computerised working memory tasks. Ginseng was also associated with an improved score on the 'social relations' subscale of the WHOQOL-100, and a significant shift on the 'calm' factor of the Bond-Lader mood scales (from calm/relaxed towards excited/tense). Conclusion: The results of the current study suggest that Korean ginseng extract can modulate working memory performance and subjective ratings of 'quality of life' and mood. Replication with a larger sample size may further elucidate the actions of this product.

• Journal of Korean Society for Quality Management
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• v.30 no.1
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• pp.162-171
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• 2002

A practical algorithm of generating most probable states in decreasing order of probability, given the probability of each unit\`s state, is suggested for approximating reliability(performability) evaluation of a network with multistate(multimode) units. Method of approximating network reliability for a given measure with most probable states is illustrated with a numerical example. The proposed method in this paper is compared with the previous method regarding memory requirement. Our method has some advantages for computation and achieves improvement with regard to memory requirement for a certain condition judging from the computation experiment.