• Journal of Magnetics
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• v.7 no.3
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• pp.101-105
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• 2002

MRAM (Magnetoresistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. This paper is for testing the actual electrical parameters to adopt MRAM technology in the semiconductor based memory device. The discussed topics are an actual integration of MRAM core cell and its properties such as electrical tuning of MOS/MTJ for data sensing and control of magnetic switching for data writing. It will be also tested that limits of the MRAM technology for a high density memory.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.231-232
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• 2016

We have fabricated the nc-Si, IGZO based nonvolatile memory TFTs using mobile protons, which can be generated by simple hydrogen insertion process via H-NB treatment at room temperature. The TFT devices above exhibited reproducible hysteresis behavior, stable ON/OFF switching, and non-volatile memory characteristics. Also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and our modified H-NB CVD. The room temperature proton-insertion process can reveal flexible inorganic based all-in-one display panel including driving circuit and memory circuit.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.491-492
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• 2008

According to high-speed large scale integration trend of Memory module product, many type of noises, such a reflection, cross-talk simultaneous switching noise, occur on the Package PCB and they make the deterioration of memory module's performance and reliability. As module products have more high efficiency, Hardware of test board and socket has to be considered In test of the high-speed Memory Module. we mainly focused on improvement of Signal integrity Using the High Frequency Test socket that we invented

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.46-49
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• 1994

In this paper we investigate the characteristics of switching and memory traps in sealed MONOS nonvolatile memory devices with different nitride thicknesses. We have demonttrated flatband voltage shift of 1V with 5V programming voltage. By fitting the experimental observations with theoretical calculations, trap density and capture cross section of memory trap at the nitride-blocking oxide interface are estimated to be 1.0${\times}$10$\^$13/ cm$\^$-2/ and 8.0${\times}$10$\^$14/ cm$\^$-2/

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.567-570
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• 2005

Most researches on monostable LCD and bistable LCD have separately been carried out. We introduce a novel liquid crystal display mode which can be operated as both memory mode and dynamic mode. The novel LCD mode has not only a long term memory time of memory mode but also a fast response time of dynamic mode. We describe switching characteristics of dual mode. Electro-optical characteristics of memory mode and dynamic mode are unique and show the possibility of device application.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.2
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• pp.73-79
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• 2011

This paper describes a reset-free delay-locked loop (DLL) for a memory controller application, with the aid of a hysteresis coarse lock detector. The coarse lock loop in the proposed DLL adjusts the delay between input and output clock within the pull-in range of the main loop phase detector. In addition, it monitors the main loop's lock status by dividing the input clock and counting its multiphase edges. Moreover, by using hysteresis, it controls the coarse lock range, thus reduces jitter. The proposed DLL neither suffers from harmonic lock and stuck problems nor needs an external reset or start-up signal. In a 0.13-${\mu}m$ CMOS process, post-layout simulation demonstrates that, even with a switching supply noise, the peak-to-peak jitter is less than 30 ps over the operating range of 500-1200 MHz. It occupies 0.04 $mm^2$ and dissipates 16.6 mW at 1.2 GHz.

• Journal of Power Electronics
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• v.19 no.1
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• pp.158-167
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• 2019

This research comparatively studies three kinds of flux regulation methods, namely, stored capacitor discharge pulse (SCDP), constant current source pulse (CCSP), and quantitative flux regulation pulse (QFRP), which are used for hybrid permanent magnet (PM) axial field flux-switching memory machines (HPM-AFFSMMs). Through an analysis of the operation principle and the series hybrid PM flux regulation mechanism of the objective machine, the circuit topologies and flux regulation process of these flux regulation methods are addressed in detail. On the basis of a simulation, the flux regulation characteristics of the researched machine during the magnetization and demagnetization processes are comparatively evaluated. Then, machine performance, including back EMF, direct and quadrature axis inductances, and magnetization and demagnetization characteristics, is quantitatively investigated. Results show that the QFRP enables the HPM-AFFSMM to achieve a less harmonic component of back EMF by approximately 7.28% and 7.97% at the magnetization and demagnetization states, respectively, and a more complete magnetization process than the SCDP and CCSP.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.1
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• pp.80-90
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• 1996

The efficienty of ATM is based on the statical multiplexing of fixed-length packets, which are called cells. The most important technical point for realizing ATM switching network is an arrangement of the buffers and switches. Current most ATM switching networks are being achieved by using the switching modules based on the unit switch of $8{\times}8$ 150Mb/s or $16{\times}16$ 150Mb/s, the unit switch of $32{\times}32$150Mb/s for a large scale system is under study in many countries. In this paper, we proposed a new $32{\times}32$(4.9Gb/s throughput) ATM switch using Shared buffer memory switch which provides superior traffic characteristics in the cell loss, delay and throughput performance and easy LSI(Large Scale Integrated circuit). We analytically estimated and simulated by computer the buffer size into it. We also proposed the configuration of the large capacity ATM switching network($M{\times}M$.M>1,000) consisting of multistage to improve the link speed by non-blocking.

• Journal of IKEEE
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• v.26 no.4
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• pp.633-638
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• 2022

Rencently, neuromorphic systems of spiking neural networks (SNNs) that imitate the human brain have attracted attention. Neuromorphic technology has the advantage of high speed and low power consumption in cognitive applications and processing. Resistive random-access memory (RRAM) for SNNs are the most efficient structure for parallel calculation and perform the gradual switching operation of spike-timing-dependent plasticity (STDP). RRAM as synaptic device operation has low-power processing and expresses various memory states. However, the integration of RRAM device causes high switching voltage and current, resulting in high power consumption. To reduce the operation voltage of the RRAM, it is important to develop new materials of the switching layer and metal electrode. This study suggested a optimized new structure that is the Metal/Al₂O₃/HfO_x/SWCNTs/N+silicon (MOCS) with single-walled carbon nanotubes (SWCNTs), which have excellent electrical and mechanical properties in order to lower the switching voltage. Therefore, we show an improvement in the gradual switching behavior and low-power I/V curve of SWCNTs-based memristors.

• Proceedings of the Korean Ceranic Society Conference
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• 2004.10a
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• pp.79.1-79.1
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• 2004