• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 1993.06a
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• pp.1354-1357
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• 1993

This paper proposes that the best reasoning(i.e. rule evaluation) method which should be used in a fuzzy system significantly depends on the reasoning environment. It is shown that allowing for dynamic switching of reasoning methods leads to better performance, even when only two different reasoning methods are considered. This paper discusses DSFS (Dynamic Switching Fuzzy System) which dynamically switches and finds the best reasoning method (from among 80 different possible reasoning methods) to use depending on the reasoning situation. To overcome the reasoning speed and memory problem of DSFS due to its computational requirements, the DSFS Switching Reasoning Table method is proposed and its higher performance as compared to a conventional fuzzy system is shown. Finally, efforts to obtain general relationships between the characteristics of different reasoning methods and the actual control surface/environment is discussed.

• 전기의세계
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• v.28 no.11
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• pp.37-44
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• 1979

This paper deals with the computer program of finding the minimal sum-of-products for a switching function by using the MASK method derived from the characteristics of the Boolean algebra. The approach differs from the previous procedures in that all the prime implicants are determined only by the bit operation and the minimal sum-of-products are obtained by the modified Petrick method in this work. The important features are the relatively small amount of the run time and the less memory capacity to solve a problem, as compared to the previous computer programs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.112-113
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• 2002

Optical bistability can be applied to the optical logic. optical signal processing and optical memory. We have measured the optical bistability of DFB-SOA and demonstrated all-optical OR logic gate using switching characteristics of DFB-SOA.

• 전기의세계
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• v.24 no.5
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• pp.91-96
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• 1975

In this paper, with a view to study the impurity effect, Ge-Si-Te memory devices are investigated experimentally about the dependence of temperature and frequency. Conductivity depends upon temperature and frequency and it is some-what influenced by heat treatment. With increasing frequency, conductivity has a tendency to be independent of temperature. We found that switching time and threshold voltage are reduced by it.

• Korean Journal of Materials Research
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• v.30 no.2
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• pp.99-104
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• 2020

Recent discoveries of ferroelectric properties in ultrathin doped hafnium oxide (HfO₂) have led to the expectation that HfO₂ could overcome the shortcomings of perovskite materials and be applied to electron devices such as Fe-Random access memory (RAM), ferroelectric tunnel junction (FTJ) and negative capacitance field effect transistor (NC-FET) device. As research on hafnium oxide ferroelectrics accelerates, several models to analyze the polarization switching characteristics of hafnium oxide ferroelectrics have been proposed from the domain or energy point of view. However, there is still a lack of in-depth consideration of models that can fully express the polarization switching properties of ferroelectrics. In this paper, a Zr-doped HfO₂ thin film based metal-ferroelectric-metal (MFM) capacitor was implemented and the polarization switching dynamics, along with the ferroelectric characteristics, of the device were analyzed. In addition, a study was conducted to propose an applicable model of HfO₂-based MFM capacitors by applying various ferroelectric switching characteristics models.

• The Transactions of the Korea Information Processing Society
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• v.4 no.1
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• pp.67-75
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• 1997

This paper presents a virtual-parallel multistage interconnection network (MIN) which provides multipath between processor and memory module. The proposed virtual-parallel MIN network which uses $m{\times}1$ mutiplexer at the input switching block, $1{\times}m$ demultiplexer at the output switching block and logN-1 switching stages has maximum $2{\times}m$ unique paths between processor and memory module. Because it has multi-redundance paths, a number of processors can connect a specific Also, this new virtual-parallel structured MIN network can reduce packet collision possibility at switching block and it has cost. It shown to improve a performance and to be a very simple structure in comparision with MBSF structured MIN.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.5
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• pp.703-717
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• 2002

This paper illustrates the implementation of a scalable shared buffer asynchronous transfer mode (ATM) switch. The designed shared buffer ATM switch has a shared buffet of a pipelined memory which has the access time of 4 ns. The high-speed buffer access time supports a possibility of the implementation of a shared buffer ATM switch which has a large switching capacity. The designed switch architecture provides flexible switching performance and port size scalability with the independence of queue address control from buffer memory control. The switch size and the buffer size of the designed ATM switch can be reconfigured without serious circuit redesign. The designed prototype chip has a shared buffer of 128-cell and 4 ${\times}$ 4 switch size. It is integrated in 0.6um, double-metal, and single-poly CMOS technology. It has 80MHz operating frequency and supports 640Mbps per port.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.31-32
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• 2010

In our previous reports [1-3], electron transport for the switching and memory devices using alkyl thiol-tethered Ru-terpyridine complex compounds with metal-insulator-metal crossbar structure has been presented. On the other hand, among organic memory devices, a memory based on the OFET is attractive because of its nondestructive readout and single transistor applications. Several attempts at nonvolatile organic memories involve electrets, which are chargeable dielectrics. However, these devices still do not sufficiently satisfy the criteria demanded in order to compete with other types of memory devices, and the electrets are generally limited to polymer materials. Until now, there is no report on nonvolatile organic electrets using nano-interfaced organic monomer layer as a dielectric material even though the use of organic monomer materials become important for the development of molecularly interfaced memory and logic elements. Furthermore, to increase a retention time for the nonvolatile organic memory device as well as to understand an intrinsic memory property, a molecular design of the organic materials is also getting important issue. In this presentation, we report on the OFET memory device built on a silicon wafer and based on films of pentacene and a SiO2 gate insulator that are separated by organic molecules which act as a gate dielectric. We proposed push-pull organic molecules (PPOM) containing triarylamine asan electron donating group (EDG), thiophene as a spacer, and malononitrile as an electron withdrawing group (EWG). The PPOM were designed to control charge transport by differences of the dihedral angles induced by a steric hindrance effect of side chainswithin the molecules. Therefore, we expect that these PPOM with potential energy barrier can save the charges which are transported to the nano-interface between the semiconductor and organic molecules used as the dielectrics. Finally, we also expect that the charges can be contributed to the memory capacity of the memory OFET device.[4]

• Journal of Semiconductor Engineering
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• v.3 no.2
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• pp.161-167
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• 2022

Electrical characteristics of LDMOS power device with LDD(Lightly Doped Drain) structure is studied with variation of the region of channel and LDD. The channel in LDMOSFET encloses a junction-type source and is believed to be an important parameter for determining the circuit operation of CMOS inverter. Two-dimensional TCAD MEDICI simulation is used to study hot-carrier effect, on-resistance Ron, breakdown voltage, and transient switching characteristic. The voltage-transfer characteristics and on-off switching properties are studied as a function of the channel length and doping levels. The digital logic levels of the output and input voltages are analyzed from the transfer curves and circuit operation. Study indicates that drain current significantly depends on the channel length rather than the LDD region, while the switching transient time is almost independent of the channel length. The high and low logic levels of the input voltage showed a strong dependency on the channel length, while the lateral substrate resistance from a latch-up path in the CMOS inverter was comparable to that of a typical CMOS inverter with a guard ring.