• Transactions of the Korean Society of Mechanical Engineers B
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• v.40 no.9
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• pp.621-627
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• 2016

In this study, we present a model that can be used to calculate the phonon-surface scattering rate directly from the experimental data on phonon mean free path (MFP) spectra of nanostructures. Using this model and the recently reported length-dependent thermal conductivity measurements on $Si_{0.9}Ge_{0.1}$ nanowires (NWs), we investigate the spectral reduced MFP distribution and the spectral phonon-surface scattering rate in the $Si_{0.9}Ge_{0.1}$ NWs. From the results, it is found that the phonon transport properties with the material and the phonon frequency dependency of the spectral phonon-surface scattering rate per unit length of the NW. The model presented in this study can be used for developing heat transfer analysis models of nanomaterials, and for determining the optimum design for tailoring the heat transfer characteristics of nanomaterials for future applications of phonon nanoengineering.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.40 no.2
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• pp.111-117
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• 2016

The primary concern of this research is to examine the phonon mean free path (MFP) spectrum contribution to heat conduction. The size effect of materials is determined by phonon MFP, and the size effect appears when the phonon MFP is similar to or less than the characteristic length of materials. Therefore, knowledge of the phonon MFP is essential to increase or decrease the heat conduction of a material for engineering applications, such as micro/nanosystems. In this study, frequency dependence of the phonon transport is considered using the Boltzmann transport equation based on a full phonon dispersion model. Additionally, the phonon MFP spectrums of in-plane and out-of-plane heat transport are investigated by varying the film thickness of the silicon layer from 41 nm to 177 nm. This will increase the understanding of anisotropic heat conduction in a SOI (Silicon-on-Insulator) transistor.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.41 no.5
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• pp.341-346
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• 2017

Knowing the mean free paths (MFPs) of thermal phonons is an essential step in performing heat transfer analysis for nanomaterials, and in determining the optimum design for tailoring the heat transfer characteristics of nanomaterials. In this study, we present a method that can be used to calculate accurately the phonon MFP spectra of nanostructures based on simple phonon kinetic theory. Here, the kinetic theory may be employed by extracting only the diffusive-transport part of the phonon spectrum (i.e., the MFPs are less than a thermal length). By considering phonon dispersion and polarization effects, the phonon MFP distributions of silicon at room temperature are calculated from phonon transport properties and the spectral MFP. Our results are validated by comparison with those of the first principle and MFP spectroscopy data.

• Current Optics and Photonics
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• v.5 no.6
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• pp.617-626
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• 2021

A parallel Monte Carlo photon migration algorithm for graphics processing units that implements an improved load-balancing strategy is presented. Conventional parallel Monte Carlo photon migration algorithms suffer from a computational bottleneck due to their reliance on a simple load-balancing strategy that does not take into account the different length of the mean free paths of the photons. In this paper, path-partition load balancing is proposed to eliminate this computational bottleneck based on a mathematical formula that parallelizes the photon path tracing process, which has previously been considered non-parallelizable. The performance of the proposed algorithm is tested using three-dimensional photon migration simulations of a human skin model.

• Journal of Magnetics
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• v.10 no.3
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• pp.77-79
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• 2005

In this work, we present a comprehensive and systematic approach for the derivation of the dc voltage generated by a magnetic multilayer undergoing ferromagnetic resonance, originally derived by Berger. Our alternative derivation applies especially in the limit of the spin diffusion length much longer than the carrier mean free path.

• The Journal of Korean Society for Radiation Therapy
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• v.13 no.1
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• pp.14-22
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• 2001

Purpose: The aim of this study is to investigate geometrical and volumetrical changes of liver due to breathing and its impact to NTCP. In order to attain better treatment results it should be considered deliberately during planning session. Mehtods and Materials : Seven patients were examined in this study who have done TACE for accurate tumor margin drawing. After contrast media injection, C-T scan data were obtained in supine position during breathing free, inhalation and exhalation, respectively. For all patients C-T scan were done with same scanning parameters- 5 mm index, 5 mm thickness and pitch 1. Based on C-T data we have measured differences of each variables between breathing status such as changes of total and remained liver volumes, GTV, beam path length and superior to inferior shift. NTCP were calculated using Lyman's effective volume DVH reduction scheme and for this NTCP calculation, the V50 was computed from DVH and each m, n value were referred from Burmans data. Results : The measured total tilter volume and the remained liver volume changed between inspiration and expiration about $1.2-7.7\%(mean+2.7\%)$ and $2.5-13.23\%(mean=5.8\%)$ respectively, and these results were statistically significant(p>0.1). The GTV difference in each patient varied widely from $1.17\%\;to\;30.69\%$, but this result was not statistically significant. Depending on the breathing status, the beam path length was changed from 0.5 cm to 1.1 cm with the average of 0.7 cm, and it was statistically significant(p=0.006). The measured superior to inferior shifts were ranged from 0.5 cm to 3.74 cm. The NTCPs were changed relatively small in each patient, but the variation was large between the patients. The mean NTCP difference was $10.5\%$, with the variation ranged from $7\%\;to\;23.5\%$. Conclusion : Variations of liver volume and of beam path length were changed significantly depending on the breathing statues and the range of variation itself was very different between the patients. Since this variance could seriously affect the clinical outcomes of radiation treatments, the breathing of patients need to be accounted when a final treatment planning is derided.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.57-63
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• 2008

In this paper, the dependence of MOSFET performance on the channel stress is characterized in depth. The tensile and compressive stresses are applied to CMOSFET using a nitride film which is used for the contact etch stop layer (CESL). Drain current of NMOS and PMOS is increased by inducing tensile and compressive stress, respectively, due to the increased mobility as well known. In case of NMOS with tensile stress, both decrease of the back scattering ratio ($\tau_{sat}$) and increase of the thermal injection velocity ($V_{inj}$) contribute the increase of mobility. It is also shown that the decrease of the $\tau_{sat}$ is due to the decrease of the mean free path ($\lambda_O$). On the other hand, the mobility improvement of PMOS with compressive stress is analyzed to be only due to the so increased $V_{inj}$ because the back scattering ratio is increased by the compressive stress. Therefore it was confirmed that the device performance has a strong dependency on the channel back scattering of the inversion layer and thermal injection velocity at the source side and NMOS and PMOS have different dependency on them.

• Progress in Superconductivity and Cryogenics
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• v.21 no.3
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• pp.18-21
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• 2019

We studied the effect of Fe ion irradiation on the upper critical field ($H_{c2}$) of 410 nm single-crystalline $MgB_2$ thin films. The irradiation energy was fixed at 140 keV when we increased the irradiation doses from $1{\times}10^{14}ion/cm^2$ to $4{\times}10^{14}ion/cm^2$. We found that $H_{c2}$ significantly increase with increasing irradiation dose, despite the low irradiation energy. The enhancement of $H_{c2}$ could be explained by the reduction of electron mean free path caused by defects induced from irradiation, leading to a decrease of coherence length (${\xi}$). We also discussed the effect of irradiation on temperature-dependent resistivity in details.

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.489-493
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• 2004

The electrical property of MMC is essentially important to some applications such as power transmission lines and cables, electronic and electrical components as well as electromagnetic shielding equipments. The behavior of electrical resistivity of $SiC_{w}/Al$ alloy composites under as-extruded and annealed conditions has been investigated within the temperature range from room temperature to $450^{\circ}C$. It can be seen that within entire temperature range, the electrical resistivity of composites was higher than that of an unreinforced matrix alloy under the same condition of either as-extrusion or annealing. The temperature dependence of both exhibited positive incline like a typical metal. The variation of electrical resistivity of an unreinforced matrix alloy with temperature from ambient temperature to $450^{\circ}C$ was nearly monotonous, while those of composites increased monotonously at low temperature and rose to a high level after about $250^{\circ}C or 275^{\circ}C$. The difference of these temperature dependences on electrical resistivity can be interpreted as qualitatively the interfaces of $SiC_{w}$ fibers and matrix, where act as nucleation sites.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.10
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• pp.820-826
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• 2009

The anisotropic phonon conductions with varying Joule heating rate of the silicon film in Silicon-on-Insulator devices are examined using the electron-phonon interaction model. It is found that the phonon heat transfer rate at each boundary of Si-layer has a strong dependence on the heating power rate. And the phonon flow decreases when the temperature gradient has a sharp change within extremely short length scales such as phonon mean free path. Thus the heat generated in the hot spot region is removed primarily by heat conduction through Si-layer at the higher Joule heating level and the phonon nonlocality is mainly attributed to lower group velocity phonons as remarkably dissimilar to the case of electrons in laser heated plasmas. To validate these observations the modified phonon nonlocal model considering complete phonon dispersion relations is introduced as a correct form of the conventional theory. We also reveal that the relation between the phonon heat deposition time from the hot spot region and the relaxation time in Si-layer can be used to estimate the intrinsic thermal resistance in the parallel heat flow direction as Joule heating level varies.