• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.297-302
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• 2005

Chemical mechanical polishing(CMP) performances can be optimized by several process parameters such as equipment and consumables (pad, backing film and slurry). Pad properties are important in determining removal rate and planarization ability of a CMP process. It is investigated the performance of oxide CMP process using commercial silica slurry after the pad conditioning temperature was varied. Conditioning process with the high temperature made the slurry be unrestricted to flow and be hold, which made the removal rate of oxide film increase. The pad became softer and flexible as the conditioning temperature increases. Then the softer pad provided the better surface planarity of oxide film without defect.

• Tribology and Lubricants
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• 제15권1호
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• pp.90-97
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• 1999

Chemical-Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active, abrasive containing slurry. CU process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves tribology. The liquid slurry is trapped between the wafer (work piece) and pad (tooling) forming a lubricating film. For the first step to understand material removal rate of the CMP process, the lubricational analyses were done with commercial 100mm diameter silicon wafers to get nominal clearance of the slurry film, roll and pitch angle at the steady state. For this purpose, we calculate slurry pressure, resultant forces and moments at the steady state in the range of typical industrial polishing conditions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.558-559
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• 2007

A commercially de-waxer which kinds of solvent after was used to remove a thick organic wax film after polishing process and several steps of SC-1 cleanings were followed for the removal of organic wax residues and particles which requires long process time and high cost of ownership (COO). DIO3 was used to remove organic wax residues too achieve low COO. In this study, 0103 rinsing could use instead of 01 water rinsing. The process time and chemical consumption were reduced by using DIO3.

• 한국산학기술학회논문지
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• 제12권7호
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• pp.3334-3340
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• 2011

본 연구에서는 GTL (Gas To Liquids) 파일럿 공정의 설계를 위한 아민 수용액을 이용한 이산화탄소 제거공정에 대한 전산모사를 수행하였다. 이산화탄소 제거를 위한 용매로써 30wt% DEA(diethanol amine) 수용액을 사용하였으며, 공정 배열은 흡수탑과 탈거탑의 2기의 column을 사용하였다. 전산모사를 위해서 Invensys사의 PRO/II with PROVISION 9.0을 사용하였으며 열역학 모델식으로는 amine special package내의 Kent-Eisneberg 모델식을 사용하였다. 전산모사를 통해서 이산화탄소 제거공정에 대한 열 및 물질수지를 도출하였으며, 흡수탑과 탈거탑에 대한 충진탑의 직경과 높이를 산출하였다.

• 한국생산제조학회지
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• 제7권1호
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• pp.34-40
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• 1998

Conductive metal matrix composite(MMC) material of 30% silicon carbide particulated based on aluminum matrix was machined by die sinking electrical discharge machining(EDM) process according to different current and duty factor for reverse polarity of electrode. Material removal rate(MRR) was examined by process under various operation conditions. The surface morphology was evaluated by surface roughness parameter and scanning electron microscopy(SEM) research. The MRR was suddenly increased over 11 ampere of current, and it was slightly changed over 0.3 of duty factor. The maximum surface roughness of EDMed surface was affected by the duty factor. The SEM photograghs of EDMed surface showed wide recast distribution region of melting materials as increased of current and duty factor.

• 한국안전학회지
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• 제25권5호
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• pp.1-6
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• 2010

When the ceramic material is being machined, micro crack and brittle fracture dominate the process of material removal. Generally, ceramics are very difficult-to-cut materials and machined using conventional method such as grinding and polishing. However, such processes are generally cost-expensive and have low material removal rate. Machinable ceramics used in this study contain BN powder to overcome these problem and for productivity elevation. This paper focuses on machinability evaluation during end mill process with CNC machining center in this study. Experiment for this purpose is performed for tool wear patterns and mechanism.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2007년도 제34회 KOSCO SYMPOSIUM 논문집
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• pp.155-160
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• 2007

This study was conducted to find out the chlorine removal characteristics of waste plastic mixture by pyrolysis process with thermogravimetric analysis(TGA) and a lab-scale pyrolyzer. The material used as plastic wastes were PE (Poly-ethylene), PP (Poly-prophylene), and PVC (Poly Vinyl Chloride). Experimental procedure were composed of three steps; 1st step: TGA of PVC, PP and PE, 2nd step: chlorine removal rate of PVC in a lab-scale pyrolyzer, 3rd step: chlorine removal rate of PVC-PE and PVC-PP mixture in a pyrolyzer. Through the results of TGA, we can estimate the basic pyrolysis characteristics of each plastic, and then we can also derive the design parameters and operating conditions of the lab-scale pyrolyzer. The results can be used as primary data for designing a system to produce RPF (Refuse Plastic Fuel), a waste incinerator and a pyrolysis/gasification process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.45-48
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• 2003

The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on tungsten passivation layer in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we investigated the effects of oxidizer on W-CMP process with three different kinds of oxidizers, such as $H_2O_2$, $Fe(NO_3)_3$, and $KIO_3$. In order to compare the removal rate and non-uniformity of three oxidizers, we used alumina-based slurry of pH 4. According to the CMP tests, three oxidizers showed different removal mechanism on tungsten surface. Also, the microstructures of surface layer by AFM image were greatly influenced by the slurry chemical, composition of oxidizers. The difference in removal rate and roughness of tungsten surface are believed to caused by modification in the mechanical behavior of $Al_2O_3$ abrasive particles in CMP slurry. Our stabilized slurries can be used a guideline and promising method for improved W-CMP process.

• 한국빅데이터학회지
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• 제4권2호
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• pp.61-71
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• 2019

반도체 웨이퍼의 표면을 연마하여 평탄화하는 Chemical Mechanical Planarization(CMP) 공정은 다양한 화학물질과 물리적인 기계장치에 의한 작용을 받기 때문에 공정을 안정적으로 관리하기 힘들다. CMP 공정에서 품질 지표로는 Material Removal Rate(MRR)를 많이 사용하고, CMP 공정의 안정적 관리를 위해서는 MRR을 예측하는 것이 중요하다. 본 연구에서는 머신러닝 기법들을 이용하여 CMP 공정에서 수집된 시계열 센서 데이터를 분석하여 MRR을 예측하는 모형과 공정 품질을 해석하기 위한 분류 모형을 개발한다. 나아가 분류 결과를 분석하여, CMP 공정 품질에 영향을 미치는 유의미한 변수를 파악하고 고품질을 유지하기 위한 공정 조건을 설명한다.

• 한국공작기계학회논문집
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• 제12권2호
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• pp.1-8
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• 2003

Conventionally used linear or circular interpolator is undesirable for the precision machining of 3D free-form surface as the following reason: the transmission errors due to the huge number of data, discontinuity of segmentation, unsmooth motion speed. To this regard, modern CNC machine tools are designed with the function of machining arbitrary parametric curves. However, these systems don't consider the adaptive federate, which dominates the quality of the machining process. This paper proposes a NURBS interpolator for the constant material removal rate. That is accomplished by the variable federate using curvature of curve. The curvature-compensated feederate system has important Potential applications in ensuring part accuracy and protecting cutting tool. The simulated result show it can be applicable to the real machining.