• 한국초전도ㆍ저온공학회논문지
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• 제21권2호
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• pp.15-21
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• 2019

In the mine exploration sites, sustainable treatment system of mine water with energy saving and minimized chemical additives is required. Since most of the mine water contains highly-concentrated ferrous ion, it is necessary to study on the removal method of iron ions. We propose the system consisting of two processes; precipitation process by air oxidation using solid catalyst-modified magnetite and separation process combining gravitational sedimentation and magnetic separation using a permanent magnet. Firstly, in the precipitation process (a former process of the system), we succeeded to prepare solid catalyst-modified magnetite. Air oxidation using solid catalyst-modified magnetite using $Fe_2(SO_4)_3$ as a starting material showed high iron removal capability. Secondly, in the separation process (latter process of the system), solid catalyst-modified magnetite using $Fe_2(SO_4)_3$ as a starting material can be separated by a superconducting bulk magnet and a permanent magnet.

• 반도체디스플레이기술학회지
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• 제6권2호
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• pp.35-40
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• 2007

An integrated material removal model considering thermal, chemical and contact mechanical effects in CMP process is proposed. These effects are highly coupled together in the current modeling effort. The contact mechanics is employed in the model incorporated with the heat transfer and chemical reaction mechanisms. The mechanical abrasion actions happening due to the mechanical contacts between the wafer and abrasive particles in the slurry and between the wafer and pad asperities cause friction and consequently generate heats, which mainly acts as the heat source accelerating chemical reaction(s) between the wafer and slurry chemical(s). The proposed model may be a help in understanding multi-physical interactions in CMP process occurring among the wafer, pad and various consumables such as slurry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.223-227
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• 2002

As the channel length of device shrinks below $0.13{\mu}m$, CMP(chemical mechanical polishing) process got into key process for global planarization in the chip manufacturing process. The removal rate and non-uniformity of the CMP characteristics occupy an important position to CMP process control. Especially, the post-CMP thickness variation depends on the device yield as well as the stability of subsequent process. In this paper, every wafer polished two times for the improvement of oxide CMP process characteristics. Then, we discussed the removal rate and non-uniformity characteristics of post-CMP process. As a result of CMP experiment, we have obtained within-wafer non-uniformity (WIWNU) below 4 [%], and wafer-to-wafer non-uniformity (WTWNU) within 3.5 [%]. It is very good result, because the reliable non-uniformity of CMP process is within 5 [%].

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2003년도 춘계학술대회논문집
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• pp.127-130
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• 2003

Electrolytic polishing is the anodic dissolution process in the transpassive state. It removes non-metallic inclusions and improves mechanical and corrosion resistance of stainless steel. Electrolytic polishing is normally used to remove a very thin layer of material from the surface of a metal object. An electrolyte of phosphoric, sulfuric and distilled water has been used in this study. In the low current density region, there can be found plateau region and material removal process and leveling process occur successively. In this study, an electrochemical polishing process using pulse current is adopted as a new electrochemical polishing process. In electrochemical machining processes, it has been found that pulse electrochemical processes provide an attractive alternative to the electrochemical processes using continuous current. Hence, this study will discuss the electrochemical polishing processes in low current density region and pulse electrochemical polishing.

• 소성∙가공
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• 제12권4호
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• pp.388-393
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• 2003

Electrolytic polishing is the anodic dissolution process in the transpassive state. It removes non-metallic inclusions and improves mechanical and corrosion resistance of stainless steel. Electrolytic polishing is normally used to remove a very thin layer of material from the surface of a metal object. An electrolyte of phosphoric acid 50% in vol., sulfuric acid 20% in vol. and distilled water 30% in vol. has been used in this study. In the low current density region, there can be found plateau region and material removal process and leveling process occur successively. In this study, an electrochemical polishing process using pulse current is adopted as a new electrochemical polishing process. In electrochemical machining processes, it has been found that pulse electrochemical processes provide an attractive alternative to the electrochemical processes using continuous current. Hence, this study will discuss the electrochemical polishing processes in low current density region and pulse electrochemical polishing.

• Tribology and Lubricants
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• 제37권6호
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• pp.208-212
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• 2021

Chemical mechanical polishing (CMP) is a key technology used for the global planarization of thin films in semiconductor production and smoothing the surface of substrate materials. CMP is a type of hybrid process using a material removal mechanism that forms a chemically reacted layer on the surface of a material owing to chemical elements included in a slurry and mechanically removes the chemically reacted layer using abrasive particles. Sapphire is known as a material that requires considerable time to remove materials through CMP owing to its high hardness and chemical stability. This study introduces a technology using electrolytic ionization and ultraviolet (UV) light in sapphire CMP and compares it with the existing CMP method from the perspective of the material removal rate (MRR). The technology proposed in the study experimentally confirms that the MRR of sapphire CMP can be increased by approximately 29.9, which is judged as a result of the generation of hydroxyl radicals (·OH) in the slurry. In the future, studies from various perspectives, such as the material removal mechanism and surface chemical reaction analysis of CMP technology using electrolytic ionization and UV, are required, and a tribological approach is also required to understand the mechanical removal of chemically reacted layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.482-483
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• 2009

In chemical mechanical planarization (CMP) process, the uniformity of stress acting on wafer surface is a key factor for uniform material removal of thin film especially in the oxide CMP. In this paper, we analyze the stress on the contact region between wafer and pad with finite-element analysis (FEA). The setting pressure acting on wafer back side was $500g/cm^2$ and the retainer pressure was changed from 300 to $700g/cm^2$. The polishing test is also done with the same conditions. The material removal rate profiles well-matched with stress distribution.

• Tribology and Lubricants
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• 제33권3호
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• pp.106-111
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• 2017

Sapphire is an anisotropic material with excellent physical and chemical properties and is used as a substrate material in various fields such as LED (light emitting diode), power semiconductor, superconductor, sensor, and optical devices. Sapphire is processed into the final substrate through multi-wire saw, double-side lapping, heat treatment, diamond mechanical polishing, and chemical mechanical polishing. Among these, chemical mechanical polishing is the key process that determines the final surface quality of the substrate. Recent studies have reported that the material removal characteristics during chemical mechanical polishing changes according to the crystal orientations, however, detailed analysis of this phenomenon has not reported. In this work, we carried out chemical mechanical polishing of C(0001), R($1{\bar{1}}02$), and A($11{\bar{2}}0$) substrates with different sapphire crystal planes, and analyzed the effect of crystal orientation on the material removal characteristics and their correlations. We measured the material removal rate and frictional force to determine the material removal phenomenon, and performed nano-indentation to evaluate the material characteristics before and after the reaction. Our findings show that the material removal rate and frictional force depend on the crystal orientation, and the chemical reaction between the sapphire substrate and the slurry accelerates the material removal rate during chemical mechanical polishing.

• Transactions on Electrical and Electronic Materials
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• 제17권4호
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• pp.204-207
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• 2016

Experimental study of UV-irradiated O₂/H₂ gas phase cleaning for PMMA (Polymethylmethacrylate) removal is carried out in a load-locked reactor equipped with a UV lamp and PBN heater. UV enhanced O₂/H₂ gas phase cleaning removes polymethylmethacrylate (PMMA) better at lower process pressure with higher content of H₂. O₂ gas compete for UV (184.9 nm) absorption with PMMA producing O₃, O(¹D) and lower dissociation of PMMA. In our experimental conditions, etching reaction of PMMA at the substrate temperature between 75℃ and 125℃ had activation energy of about 5.86 kcal/mol indicating etching was controlled by surface reaction. Above the 180℃, PMMA removal was governed by a supply of reaction gas rather than by substrate temperature.

• 한국생물공학회:학술대회논문집
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• 한국생물공학회 2005년도 생물공학의 동향(XVII)
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• pp.456-462
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• 2005

The objective of this study was to develop a removal process by which $H_2S$ could be biologically removed from the odoriferous gases generated in the waste food recycling process. In order to develop this process we were first required to select a proper biofilter support protocol. When the selected biofilter equipment was then tested suing a synthetic odoriferous gas containing 600 ppm of $H_2S$, we noted a maximal removal rate of 658 $g-H_2S/m^3{\cdot}hr$, using polypropylene fibrils as supporting materials. Under identical experimental conditions, we obtained a value of 411.2 $g-H_2S/m^3{\cdot}hr$, using polyurethane as a support material. We also conducted a trial in which volcanic stone was utilized as a support material, and in this trial, we logged a maximal 105.1 $g-H_2S/m^3{\cdot}hr$ removal rate. As the result of our experiments, we concluded that polypropylene fibrils constituted the ideal material for the removal of $H_2S$ gas via biological treatment.