• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1349-1354
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• 2003

Ultrasonic Machining process is an efficient and economical means of precision machining on glass and ceramic materials. However, the mechanics of the process with respect to crack initiation and propagation, and stress development in the ceramic workpiece subsurface are still not well understood. In this research, we investigate the basic mechanism of chemical assisted ultrasonic machining(CUSM) of glass through the experimental approach. For the purpose of this study, we designed and fabricated the desktop micro ultrasonic machine. The feed is controlled precisely by using the constant load control system. During the machining experiment, the effects of HF(hydrofluoric acid) characteristics and machining condition on the surface roughness and the material removal rate are measured and compared.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.3
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• pp.713-723
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• 1995

In intelligent machine tools, a computer based control system, which can adapt the machining parameters in an optimal fashion based on sensor measurements of the machining process, should be incorporated. In this paper, the technology for adaptively optimizing the cutting conditions to maximize the material removal rate in face milling operations is proposed using the exterior penalty function method combined with multilayered neural networks. Two neural networks are introduced ; one for estimating tool were length, the other for mapping input and output relations from experimental data. Then, the optimization of cutting conditions is adaptively implemented using tool were information and predicted process output. The results are demonstrated with respect to each level of machining such as rough, fine and finish cutting.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.89-92
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• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.709-712
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• 2002

For the electro-discharge machining of an electro-conductive anisotropic composite, an unsteady state formulation was established and solved by Galerkin's finite element method. The distribution of temperature on work piece, the shape of the crater and the material removal rate were obtained in terms of the process parameters. As the spark was initiated the workpiece immediately started to melt and the heat affected zone was formed. The moving boundary of the crater was also identified with time. When the radial and axial conductivities were increased separately the temperature distribution and the shape of the crater were shifted in the same direction respectively and the material removal rate was found to be higher in the case of increasing radial conductivity rather than the axial conductivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.313-316
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• 2004

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics(ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.188-191
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• 2003

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• Tribology and Lubricants
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• v.28 no.6
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• pp.272-277
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• 2012

Finite element analysis was carried out using wafer-scale and particle-scale models to understand the mechanism of the fast removal rate(edge effect) at wafer edges in the chemical-mechanical polishing process. This is the first to report that a particle-scale model can explain the edge effect well in terms of stress distribution and magnitude. The results also revealed that the mechanism could not be fully understood by using the wafer-scale model, which has been used in many previous studies. The wafer-scale model neither gives the stress magnitude that is sufficient to remove material nor indicates the coincidence between the stress distribution and the removal rate along a wafer surface.

• Journal of Electrochemical Science and Technology
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• v.11 no.4
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• pp.346-351
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• 2020

The removal characteristics of copper (Cu) from electrochemical surface by voltage-activated reaction were reviewed to assess the applicability of electrochemical-mechanical polishing (ECMP) process in three types of electrolytes, such as HNO₃, KNO₃ and NaNO₃. Electrochemical surface conditions such as active, passive, transient and trans-passive states were monitored from its current-voltage (I-V) characteristic curves obtained by linear sweep voltammetry (LSV) method. In addition, the oxidation and reduction process of the Cu surface by repetitive input of positive and negative voltages were evaluated from the I-V curve obtained using the cyclic voltammetry (CV) method. Finally, the X-ray diffraction (XRD) patterns and energy dispersive spectroscopy (EDS) analyses were used to observe the structural surface states of a Cu electrode. The electrochemical analyses proposed in this study will help to accurately control the material removal rate (MRR) from the actual ECMP process because they are a good methodology for predicting optimal electrochemical process parameters such as current density, operating voltage, and operating time before performing the ECMP process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.985-993
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• 2006

An experiment to find out the removal mechanism of PEG(polyethyleneglycol) by using UV-enhanced $O_2$ GPC (gas phase cleaning) at low substrate temperature below $200^{\circ}C$ was executed under various process conditions, such as substrate temperature, UV exposure, and $O_2$ gas. The possibility of using $UV/O_2$ GPC as a low-temperature in-situ cleaning tool for organic removal was confirmed by the removal of a PEG film with a thickness of about 200 nm within 150 sec at a substrate temperature of $200^{\circ}C$. Synergistic effects by combining photo-dissociation and photo oxidation can only remove the entire PEG film without residues within experimental splits. In $UV/O_2$ GPC with substrate temperatures higher than the glass transition temperature, the substantial increase in the PEG removal rate can be explained by surface-wave formation. The photo-dissociation of PEG film by UV exposure results in the formation of end aldehyde by dissociation of back-bone chain and direct decomposition of light molecules. The role of oxygen is forming peroxide radicals and/or terminating the dis-proportionation reaction by forming peroxide.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.598-603
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• 2005

Recently, the advanced industries using micro parts are rapidly growing. The appearance of ultra-precision feed mechanism and the development of control system make it possible to process parts in sub millimeter scale by mechanical methods. Micro endmilling is one of the prominent technology that has wide spectrum of application field ranging from macro parts to micro products. So, micro stairs have been trying to cut by using high revolution air turbine spindle and micro-endmill, and studying for magnitude of cutting force. This investigation deals removal characteristics of burr generated by micro endmilling process. Also, decreasing of burr is significant problem in making smooth and precise parts in micro endmilling. In micro endmilling, the material removal rate(MRR) and cutting forces are very small. This paper presents an investigation on the machining characteristics for micro stairs by using ultrahigh-speed air turbine spindle in machining.