• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1244-1247
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• 2005

The material removal mechanism of Electrical Discharge Machining (EDM) process has been studied for several decades. However, understanding of the material removal mechanism is still a difficult problem because the mechanism involves complicated physical phenomena including plasma. Especially, for a micro-EDM process, due to the influence of the debris that is generated during the machining process, quantitative modeling of EDM becomes more complex. To understand better the effects of the debris in the micro-EDM process experimentally, a new approach has been introduced in this study. Using a specially designed workpiece holder, the debris generated during the EDM with various process conditions has been collected. Then, using a simulated environment using micro-sized metal powders, the influence of the debris during the single EDM discharge has been observed. The effects of EDM process parameters on the debris size and product quality are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.228-232
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• 2002

The rise throughput and the stability in the device fabrication can be obtained by applying chemical mechanical polishing(CMP) process in 0.18 ${\mu}m$ semiconductor device. However it does have various problems due to the CMP equipment. Especially, among the CMP components, process variables are very important parameters in determining removal rate and non-uniformity. In this paper, We studied the DOE(design of experiment) method for the optimized CMP process. Various process variations, such as table and head speed, slurry flow rate and down force, have investigated in the viewpoint of removal rate and non-uniformity. Through the above DOE results, we could set-up the optimal process parameters.

• Journal of environmental and Sanitary engineering
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• v.20 no.2 s.56
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• pp.12-20
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• 2005

Most of sewage treatment plants in Korea is operated for the removal of organic material. Because of low C/N ratio of domestic wastewater it is very difficult to remove nitrogen and phosphorus from wastewater. Therefore C/N ratio is key factor for the removed of nitrogen and phosphorus. PSB(photosynthetic bacteria) can remove the nutrient materials, so this study is focused on PSB characterization of nutrient removal. PSB is possible to remove nitrogen, phosphorus in anaerobic and aerobic condition. This study try to find out condition of the PSB in SBR reactor, Batch reactor. It consists of three Mode. Mode 1, 2 is to apply activated sludge process and Mode 3 is that seeded PSB in the activated sludge process. As a result of SBR process, Mode 1, 2 which was activated sludge Process showed $79\~90\%,\;66\~90\%$ of SCODcr, $94.67\~95.89\%,\;95.76\~98.56\%$ of TKN, and Mode 3 has $84\~92\%$ of SCODcr, $95.39\~99.52\%$ of TKN removal efficiency, respectively. When comparison with Mode 1, 2 and 3, most of nitrogen and phosphorus is removed at the anaerobic condition in Mode 3. but Mode 1, 2 has just revealed activated sludge process characterization. It would because of characterization of PSB.

• Journal of environmental and Sanitary engineering
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• v.11 no.2
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• pp.43-52
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• 1996

Using rotating biological contactor(RBC) with artificial endogenous stage and aerobic fixed biofilm reactor(AFBR), organic material removal and biological nitrification of piggery wastewater has been studied at a pilot plant. RBC was operated in the endogenous phase at a interval of every 25 days. The concentration of COD, BOD and TKN in influent wastewater were from 2,940 to 3,800 mg/L, from 1,190 to 1,850 mg/L and from 486 to 754 mg/L respectively. The maximum active biomass content represented as VSS per unit aera was $2.0mg/cm$^{2}$ and biofilm dry density of $17mg/cm^{3}$ was observed at biofilm thickness of $900{\;}{\mu}m$. It was observed that the pilot scale RBC/AFBR process exhibited 72 percentage to 93 percentage of BOD removal, In order to obtain more than 90 percentage of BOD removal, the organic loading rate to the RBC/AFBR process should be maintained less than $0.09{\;}m^{3}/m^{2}{\cdot}day(125.9g{;\}BOD/m^{3}{\cdot}d$. The TKN removal efficiencies was from 45.5 to 90.9 percentage according to vary influent loading rate, It was estimated that the RBC/AFBR process consumed approximately 6.2 mg/L(as $CaCO_{3}$) of alkalinity per 1 mg/L of $NH_{3}$-N oxidized as the nitrification took piace.

• Tribology and Lubricants
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• v.32 no.4
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• pp.119-124
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• 2016

In the sapphire wafering process, lapping is a crucial operation in order to reduce the damaged layer and achieve the target thickness. Many parameters, such as pressure, velocity, abrasive, slurry and plate, affect lapping characteristics. This paper presents an experimental investigation on the effect of the plate groove on the material removal rate and roughness of the wafer. We select the spiral pattern and rectangular type as the groove shapes. We vary the groove density by controlling the groove shape dimension, i.e., the groove width and pitch. As the groove density increases to 0.4, the material removal rate increases and gradually reaches a saturation point. When the groove density is low, the pressing load is mostly supported by the thick film, and only a small amount acts on the abrasives resulting to a low material removal rate. The roughness decreases on increasing the groove density up to 0.3 because thick film makes partial participations of large abrasives which make deep scratches. From these results, we could conclude that the groove affects the contact condition between the wafer and plate. At the same groove density, the pitch has more influence on reducing the film thickness than the groove width. By decreasing the groove density with a smaller pitch and larger groove width, we could achieve a high material removal rate and low roughness. These results would be helpful in understanding the groove effects and determining the appropriate groove design.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.787-792
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• 2005

Chemical mechanical polishing(CMP) has become the process of choice for modem semiconductor devices to achieve both local and global planarization. CMP is a complex process which depends on numerous variables such as macro, micro and nano-geometry of pad, relative velocity between pad and wafer stiffness and dampening characteristics of pad, slurry, pH, chemical components of slurry, abrasive concentration, abrasive size, abrasive shape, etc. Especially, an oxidizer of chemical components is very important remove a target material in metal CMP process. This paper introduces the effect of oxidizer such as $H_2O_2,\;Fe(NO_3)_3\;and\;KIO_3$ in slurry for tungsten which is used in via or/and plug. Finally the duplex reacting mechanism of $oxidizer(H_2O_2)$ through adding the $catalyst(Fe(NO_3)_3)$ could acquire the sufficient removal rate in tungsten CMP.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.19 no.2
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• pp.184-190
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• 2010

Recently, the polishing process using magnetorheological fluids(MR fluids) has been focused as a new ultra-precision polishing technology for micro and optical parts such as aspheric lenses, etc. This method uses MR fluid as a polishing media which contains required micro abrasives. In the MR polishing process, the surface roughness and material removal rate of a workpiece are affected by the process parameters, such as the properties of used nonmagnetic abrasives(particle material, size, aspect ratio and density, etc.), rotating wheel speed, imposed magnetic flux density and feed rate, etc. The objective of this research is to predict MRR according to the polishing conditions based on the multiple regression analysis. Three polishing parameters such as wheel speed, feed rates and current value were optimized. For experimental works, an orthogonal array L27(313) was used based on DOE(Design of Experiments), and ANOVA(Analysis of Variance) was carried out. Finally, it was possible to recognize that the sequence of the factors affecting MRR correspond to feed rate, current and wheel speed, and to determine a combination of optimal polishing conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.839-845
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• 2007

In this paper, a polishing pad has been analyzed in detail, to understand surface phenomena of polishing process. The polishing pad plays a key role in polishing process and is one of the important layer in polishing process, because it is a reaction layer of polishing[1]. Pad surface physical property is also ruled by pad profile. The profile and roughness of pad is controlled by different types of conditioning tool. Conditioning tool add mechanical force to pad, and make some roughness and profile. Formed pad surface will affect on polishing performance such as RR (Removal Rate) and uniformity in CMP Pad surface condition is changed by conditioning tool and dummy run and is stable at final. And this research, we want to reduce break-in and dummy polishing process by analysis of pad surface and artificial machining to make stable pad surface. The surface treatment or machining enables to control the surface of polishing pad. Therefore, this research intends to verify the effect of the buffing process on pad surface through analysis of the removal rate, friction force and temperature. In this research, urethane polishing pad which is named IC pad(Nitta-Haas Inc.) and has micro pore structure, is studied because, this type of pad is most conventional type.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.15 no.1
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• pp.68-73
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• 2016

In this paper, the grinding characteristics in internal grinding methods(plunge, thrust) were studied with vitreous CBN wheels using machining center. Grinding experiments were performed according to the same material removal rate conditions such as a wheel speed, depth of cut and workpiece speed. And the grinding force, machining error and grinding ratio were investigated though these experiments. Based on the experimental results, the grinding characteristics on internal grinding methods were compared.

• Korean Journal of Computational Design and Engineering
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• v.2 no.3
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• pp.161-174
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• 1997

In this paper, the techniques for graphic simulation of material removal process are described. The concepts of the bounding box and base plane are proposed. With these concepts, a real-time shaded display of a Z-map model being milled by a cutting tool following an NC path can be implemented very efficiently. The base planes make it possible to detect the visible face of Z-map model effectively. And the bounding box of tool sweep volume provides minimum area of screen to be updated. The proposed techniques are suitable for implementation in raster graphic device and need a few memories and a small amount of calculation. Proposed method is written in C and executable on MS-Windows95 and Window-NT.