• Korean Journal of Materials Research
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• v.13 no.4
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• pp.259-265
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• 2003

For the aim of thin microwave absorbers used in mobile telecommunication frequency band, this study proposed a high permittivity dielectrics(λ/4 spacer) coated with ITO thin films of 377 $\Omega$/sq(impedance transformer). High frequency dielectric properties of ferroelectric ceramics, electrical properties of ITO thin films and microwave absorbing properties of ITO/dielectrics were investigated. Ferroelectric materials including $BaTiO_3$(BT), 0.9Pb($Mg_{1}$3/Nb$_{2}$3/)$O_3$-0.1 $PbTiO_3$(PMN-PT), 0.8 Pb (Mg$_{1}$3/$Nb_{2}$3/)$O_3$-0.2 Pb($Zn_{1}$3$_Nb{2}$3/)$O_3$(PMN-PZN) were prepared by ceramic processing for high permittivity dielectrics,. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave frequency range. The microwave absorbance (at 2 ㎓) of BT, 0.9PMN-0.1PT, and 0.8PMN-0.2PZN were found to be 60%(at a thickness of 3.5 mm), 20% (2.5 mm), and 30% (2.5 mm), respectively. By coating the ITO thin films on the ferroelectric substrates with λ/4 thickness, the microwave absorbance is greatly improved. Particularly, when the surface resistance of ITO films is closed of 377 $\Omega$/sq, the reflection loss is reduced to -20 ㏈(99% absorbance). This is attributed to the wave impedance matching controlled by ITO thin films at a given thickness of high permittivity dielectrics of λ/4 (3.5 mm for BT, 2.5 mm for PMN-PT and PMN-PZN at 2 ㎓). It is, therefore, successfully proposed that the ITO/ferroelectric materials with controlled surface resistance and high dielectric constant can be useful as a thin microwave absorbers in mobile telecommunication frequency band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.10
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• pp.941-944
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• 2016

This paper proposes 24 GHz power amplifier for automotive collision avoidance and surveillance short range radar using Samsung 65-nm CMOS process. The proposed circuit has a 2-stage differential power amplifier which includes common source structure and transformer for single to differential conversion, impedance matching, and power combining. The measurement results show 15.5 dB maximum voltage gain and 3.6 GHz 3 dB bandwidth. The measured maximum output power is 13.1 dBm, input $P1_{dB}$ is -4.72 dBm, output $P1_{dB}$ is 9.78 dBm, and maximum power efficiency is 17.7 %. The power amplifier consumes 74 mW DC power from 1.2 V supply voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.175-181
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• 2024

In electrical power substations, bulky iron-core potential transformers (PTs) are installed in a tank of gas-insulated switchgear (GIS) to measure system voltages. This paper proposed a low-power voltage transformer (LPVT) that can replace the conventional iron-core PTs in response to the demand for the digitalization of substations. The prototype LPVT consists of a capacitive voltage divider (CVD) which is embedded in a spacer and an impedance matching circuit using passive components. The CVD was fabricated with a flexible PCB to acquire enough insulation performance and withstand vibration and shock during operation. The performance of the LPVT was evaluated at 80%, 100%, and 120% of the rated voltage (38.1 kV) according to IEC 61869-11. An accuracy correction algorithm based on LabVIEW was applied to correct the voltage ratio and phase error. The corrected voltage ratio and phase error were +0.134% and +0.079 min., respectively, which satisfies the accuracy CL 0.2. In addition, the voltage ratio of LPVT was analyzed in ranges of -40~+40℃, and a temperature correction coefficient was applied to maintain the accuracy CL 0.2. By applying the LPVT proposed in this paper to the same rating GIS, it can be reduced the length per GIS bay by 11%, and the amount of SF6 by 5~7%.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.423-424
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• 2011

This paper has proposed a 920 MHz RF front-end for IEEE 802.15.4g SUN (Smart Utility Network) systems. The proposed 920 MHz RF front-end consists of a driver amplifier, a low noise amplifier, and a RF switch. In the TX mode, the driver amplifier has been designed as a single-ended topology to remove a transformer which causes a loss of the output power from the driver amplifier. In addition, a RF switch is located in the RX path not the TX path. In the RX mode, the proposed low noise amplifier can provide a differential output signal when a single-ended input signal has been applied to. A LC resonant circuit is used as both a load of the drive amplifier and a input matching circuit of the low noise amplifier, reducing the chip area. The proposed 920 MHz RF Front-end has been implemented in a 0.18-um CMOS technology. It consumes 3.6 mA in driver amplifier and 3.1 mA in low noise amplifier from a 1.8 V supply voltage.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.3
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• pp.25-32
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• 2021

In this paper, the Magneto-Electric(ME) dipole array antenna with dual-polarization in the X-Band is proposed and it is implemented and measured. The proposed array antenna is composed of 32 single ME dipole antenna and a Teflon PCB. 1 × 1 ME dipole antenna is implemented dual-polarization by radiating vertical polarization and horizontal polarization from two pairs of radiators. 2-port feeding structures are realized by lamination process using LTCC. And, each port independently feeds the radiator through a Γ-shaped feeding strip with isolation between ports. The Teflon PCB used in the antenna array has a 4-layer structure, and 2-port is fed through the top and bottom layers. The λ_g/4 transformer is applied to the transmission line of the Teflon PCB for impedance matching of the arrayed antenna and the Teflon PCB, and the optimal parameters are obtained through simulation. The measured maximum antenna gains of port 1 was 18.2 dBi, Cross-pol was 1.0 dBi. And the measured maximum antenna gains of port 1 was 18.1 dBi, Cross-pol was 3.2 dBi.