• 한국표면공학회지
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• 제34권5호
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• pp.475-480
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• 2001

Diffusion of Cu into the low-k para-xylene based plasma polymer (pXPP) thin films deposited by plasma-enhanced chemical vapor deposition using the para-xylene precursor was comparatively measured using various methods. Cu layer was deposited on the surfaces of pXPPs treated by $N_2$ plasma generated in a magnetically enhanced inductively coupled plasma reactor. Diffusion characteristics of Cu into pXPPs were measured using Rutherford backscattering spectroscopy (RBS), secondary ion mass spectroscopy (SIMS), cross-sectional transmission electron microscopy (XTEM), and current-voltage (I-V) measurements for the vacuum-annealed Cu/pXPPs for 1 hour at $450^{\circ}C$ and were compared. The results showed a correlation between the I-V measurement and SIMS data are correlated and have a sensitivity enough to evaluate the dielectric properties but the RBS or XTEM measurements are not sufficient to conclude the electrical properties of low-k dielectrics with Cu in the film bulk. The additional results indicate that the pXPP layers are quite resistant to Cu diffusion at the annealing temperature of $450^{\circ}C$ compared to the other previously reported organic low-k materials.

• Nuclear Engineering and Technology
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• 제54권11호
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• pp.4322-4328
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• 2022

The two-fluid model is widely used to describe two-phase flows in complex systems such as nuclear reactors. Although the two-phase flow was successfully simulated, the standard two-fluid model suffers from an ill-posed nature. There are several remedies for the ill-posedness of the one-dimensional (1D) two-fluid model; among those, artificial viscosity is the focus of this study. Some previous works added artificial diffusion terms to both mass and momentum equations to render the two-fluid model well-posed and demonstrated that this method provided a numerically converging model. However, they did not consider mass conservation, which is crucial for analyzing a closed reactor system. In fact, the total mass is not conserved in the previous models. This study improves the artificial viscosity model such that the 1D incompressible two-fluid model is well-posed, and the total mass is conserved. The water faucet and Kelvin-Helmholtz instability flows were simulated to test the effect of the proposed artificial viscosity model. The results indicate that the proposed artificial viscosity model effectively remedies the ill-posedness of the two-fluid model while maintaining a negligible total mass error.

• 한국결정성장학회지
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• 제9권4호
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• pp.381-383
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• 1999

First topic of this paper aims to clarify how oxygen and heat transfer in silicon melt under cusp-shaped magnetic fields. We obtained asymmetric temperature distribution by using time dependent and three-dimensional calculation. Second topic is study on molecular dynamics simulation, which was carried out to estimate diffusion constants of oxygen in silicon melt.

• 전기화학회지
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• 제11권4호
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• pp.273-283
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• 2008

고분자 전해질 연료전지의 구성요소인 기체 확산층(Gas Diffusion Layer)은 반응물을 채널에서 MEA로 전달하며 동시에 생성물을 MEA에서 채널로 전달하는 역할을 한다. 기체 확산층의 기체 투과도가 클수록 기체 확산층을 통과하는 반응기체의 양이 증가하여 고분자전해질 연료전지 성능이 향상되며 물질전달과 함께 열전달이 이루어지기 때문에 생성열에 의한 MEA의 온도상승을 억제해준다. 본 연구에서는 기체 확산층의 기체투과도를 달리하여 전기화학 반응과 열 생성을 고려한 3차원 수치해석 모델을 통해 동일 반응면적을 가지는 직선형 채널과 곡사형 채널에 대해 열전달 및 물질전달 특성을 분석하였다. 수치해석 결과 직선형 채널의 경우 곡사형 채널에 비해 기체 확산층의 기체투과도에 따른 성능 변화가 크지 않았다. 이러한 이유는 직선형 채널에서 주된 물질전달은 확산에 의해 이뤄지기 때문이다. 곡사형 채널의 경우 기체투과도가 높을수록 대류에 의한 물질전달로 원활한 물질전달이 이뤄졌기 때문에 연료전지 성능이 증가 되었으며 원활한 물질전달이 열전달을 촉진하여 MEA의 온도를 낮추었다. 또한 곡사형 채널에서는 기체투과도가 작아질수록 확산에 의한 물질 및 열전달 특성을 보여주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.118-119
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• 2013

High power, short wavelength red laser diodes (LDs) have attracted significant interests in a variety of fields due to their advantages in terms of reliability, compactness and cost. The higher brightness for human eyes is required, the shorter wavelength like 630 nm is necessary with higher output power. In this respect, LDs are promising as alternative candidates of gas or dye lasers for such applications due to their small size, high optical/electrical power conversion efficiency, robustness and so on. The crystalline quality of GaInP-AlGaInP multiple quantum wells (MQWs) and AlInP cladding layers is a crucial part in the device performance of GaInP red LDs. Here, we first investigated the effect of Si diffusion on the optical properties of GaInP-AlGaInP MQWs grown with different growth temperatures. Secondary ion mass spectroscopy (SIMS) measurements revealed that both the Mg and Si diffusion into MQW active region was significant. To reduce such diffusion, we employed undoped Mg and Si diffusion barrier and could improve the properties.Without both Mg and Si diffusion barriers, no lasing emission was observed. However, lasing emission was observed clearly for the red LDs with both Mg and Si diffusion barriers. We then investigated the temperature dependent optical properties of MQW layers grown with different well thicknesses (6, 8 and 10 nm). When the well thickness was 10 nm, the better crystalline quality was obtained. However, the observed LD performances were similar, probably due to the defects and impurities in the AlGaInP layer. Further investigation with the detailed analyses will be presented later.

• 콘크리트학회논문집
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• 제28권4호
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• pp.481-488
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• 2016

콘크리트는 공용기간동안 구조물 자체의 자중 및 이동 하중에 따른 응력을 받게 되며, 이러한 응력은 구조적인 거동뿐 아니라 내구적인 거동에도 영향을 준다. 대단위 콘크리트 부재의 시공은 시공이음을 요구하는데, 면처리 불량 또는 이어치기의 지연에 의해 콜드조인트가 발생하게 된다. 이러한 콜드조인트는 전단력에 취약할 뿐 아니라 염화물 확산성에도 영향을 미친다. 본 연구에서는 응력조건과 콜드조인트가 콘크리트의 염화물 확산에 미치는 영향을 정량적으로 평가하였다. 콜드조인트를 가진 콘크리트는 인장하중 수준이 30%에서 60%로 커질 때, 확산계수는 꾸준하게 증가하여 건전부와 큰 차이를 보이지 않았다. 그러나 압축부에서는 하중재하 30% 수준부터 콜드조인트 콘크리트에서 염화물 확산계수가 크게 증가하여 확산계수가 170% 이상 증가하였다. 이러한 특성은 압축하중을 받는 건전부 콘크리트와 큰 차이가 있으므로 이음부를 가지는 콘크리트의 내구성 설계에 주의가 필요하다.

• 대한기계학회논문집B
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• 제20권5호
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• pp.1671-1678
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• 1996

In external chemical vapor deposition processes including VAD and OVD the distribution of flame-synthesized silica particles is determined by heat and mass transfer limitations to particle formation. Combustion gas flow velocities are such that the particle diffusion time scale is longer than that of gas flow convection in the zone of particle formation. The consequence of these effects is that the particles formed tend to remain along straight smooth flow stream lines. Silica particles are formed due to oxidation and hydrolysis. In the hydrolysis, the particles are formed in diffuse bands and particle formation thus requires the diffusion of SiCl$\_$4/ toward CH$\_$4//O$\_$2/ combustion zone to react with H$\_$2/O diffusing away from these same zones on the torch face. The conversion kinetics of hydrolysis is fast compared to diffusion and the rate of conversion is thus diffusion-limited. In the language of combustion, the hydrolysis occurs as a Burke-Schumann process. In selected conditions, reaction zone shape and temperature distributions predicted by the Burke-Schumann analysis are introduced and compared with experimental data available. The calculated centerline temperatures inside the reaction zone agree well with the data, but the calculated values outside the reaction zone are a little higher than the data since the analysis does not consider diffusion in the axial direction and mixing of the combustion products with ambient air. The temperatures along the radial direction agree with the data near the centerline, but gradually diverge from the data as the distance is away from the centerline. This is caused by the convection in the radial direction, which is not considered in the analysis. Spatial distribution of silica particles are affected by convection and diffusion, resulting in a Gaussian form in the radial direction.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.188.1-188.1
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• 2014

Aluminum is widely used as a material for electrode on silicon based devices. Especially, aluminum films are used as backside and front-side electrodes in silicon quantum dot (QD) solar cells. In this point, the diffusion of aluminum is very important for the enhancement of power conversion efficiency by improvement of contact property. Aluminum was deposited on a Si (100) wafer and a Si QD layer by ion beam sputter system with a DC ion gun. The Si QD layer was fabricated by $1100^{\circ}C$ annealing of the $SiO_2/SiO_1$ multilayer film grown by ion beam sputtering deposition. Cs ion beam with a low energy and a grazing incidence angle was used in SIMS depth profiling analysis to obtain high depth resolution. Diffusion behavior of aluminum in the Al/Si and Al/Si QD interfaces was investigated by secondary ion mass spectrometry (SIMS) as a function of heat treatment temperature. It was found that aluminum is diffused into Si substrate at $450^{\circ}C$. In this presentation, the effect of heat treatment temperature and Si nitride diffusion barrier on the diffusion of Al will be discussed.

• 한국표면공학회지
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• 제48권6호
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• pp.322-328
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• 2015

We investigated the diffusion behaviors, electrical properties, microstructures, and composition of In-Ga-Zn-O (IGZO) oxide thin films deposited by radio frequency reactive magnetron sputtering with increasing annealing temperatures. The samples were deposited at room temperature and then annealed at 300, 400, 500, 600 and $700^{\circ}C$ in air ambient for 2 h. According to the results of time-of-flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy, no diffusion of In, Ga, and Zn components were observed at 300, 400, 500, $600^{\circ}C$, but there was a diffusion at $700^{\circ}C$. However, for the sample annealed at $700^{\circ}C$, considerable diffusion occurred. Especially, the concentration of In and Ga components were similar at the IGZO thin film but were decreased near the interface between the IGZO and glass substrate, while the concentration of Zn was decreased at the IGZO thin film and some Zn were partially diffused into the glass substrate. The high-resolution transmission electron microscopy results showed that a phase change at the interface between IGZO film and glass substrate began to occur at $500^{\circ}C$ and an unidentified crystalline phase was observed at the interface between IGZO film and glass substrate due to a rapid change in composition of In, Ga and Zn at $700^{\circ}C$. The best values of electron mobility of $15.5cm^2/V{\cdot}s$ and resistivity of $0.21{\Omega}cm$ were obtained from the sample annealed at $600^{\circ}C$.

• 한국유통학회지:유통연구
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• 제15권4호
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• pp.61-85
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• 2010

본 연구에서는 국내 대형할인점의 확산을 효과적으로 설명하기 위해 기업의 정보와 구매자의 구전으로 확산을 설명하는 Bass모형에 제3의 요소로 공간적 영향력을 고려하였다. 국내 대형할인점의 확산은 확산중심지인 서울경인지역에서 저차중심지인 4개 지역권역으로 확산되는 형태를 보임에 따라 공간적 영향이 중요하게 작용할 것으로 기대된다. 본 연구에서 공간적으로 구분된 시장 A(확산중심지)가 시장 B(저차중심지)에 미치는 영향이 완전히 통제되지 못하는 상황에서 시장 A가 시장 B에 미치는 공간적 영향을 다국가확산모형(multinational diffusion model)을 확장한 공간확산모형(spatial diffusion model)을 이용하여 정의하였다. Bass모형과 공간확산모형의 모수추정을 통해 두 가지 정보전달경로와 관련된 혁신계수와 모방계수로 확산을 설명하는 Bass모형보다 공간확산모형이 국내 대형할인점 확산을 더욱 효과적으로 설명하는 것으로 나타났다. 또한 혁신중심지인 서울경인과 4개 지역권역의 소매환경을 나타내는 개념적 거리에 따라 공간확산모형에서 공간적요인의 영향력이 달라질 것이 기대되어 공간확산계수와 소매환경변수간의 상관관계를 살펴보았고, 연구결과 확산중심지에서 저차중심지에 대한 공간적 영향력은 저차중심지의 소매환경이 확산중심지의 소매환경과 유사할수록 크다는 것을 밝혀내었다.