• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.285-285
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• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.86-86
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• 2001

• Transactions of the Korean Society of Mechanical Engineers A
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• v.30 no.10 s.253
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• pp.1314-1319
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• 2006

This paper describes the novel fabrication method of the high-aspect-ratio nano structure which is impossible by conventional method using a shadow mask and a Deep X-ray Lithography (DXRL). The shadow mask with $1{\mu}m-sized$ apertures is fabricated on the silicon membrane using a conventional UV-lithography. The size of aperture is reduced to 200nm by accumulated low stress silicon nitride using a LPCVD (low pressure chemical vapor deposition) process. The X-ray mask is fabricated by depositing absorber layer (Au, $3{\mu}m$) on the back side of nano shadow mask. The thickness of an absorber layer must deposit dozens micrometers to obtain contrast more than 100 for a conventional DXRL process. The thickness of $3{\mu}m-absorber$ layer can get sufficient contrast using a central beam stop method, blocking high energy X-rays. The nano circle and nano line, 200nm in diameter in width, respectively, were demonstrated 700nm in height with a negative photoresist of SU-8.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.314-317
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• 2006

Electroformed part is widely used in modem manufacturing industries, especially semi-conductor division. It is basically a specialized form of electroplating. So, it has very similar parameters with electroplating. The object of this study is development of the fine metal mask by electroforming process. In this paper considered two parameters. The first is relationship of UV exposure and soft baking time. The other one is thickness uniformity of electroformed parts by distance of between electrodes. This paper presents the fabrication method of fine metal mask by electroforming process.

• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.117-122
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• 2002

Some 10$\times$10 micro-lens arrays of a period of 300 ${\mu}{\textrm}{m}$, a thickness of 17 ${\mu}{\textrm}{m}$, and a focal length of 2.2 mm are fabricated by exposing a thick layer of photoresist through a grayscale mask via UV proximity printing. The grayscale mask is fabricated in a holographic film by reducing (6.6X) a high-resolution black-and-white film where a grayscale patters of a micro-lens array designed by a computer has been written using a film recorder. The proposed method has the advantage of a low fabrication cost, a fill-factor of almost 100% and the ease of realizing an aspheric lens.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.8 s.185
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• pp.39-46
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• 2006

Nano-scale fabrication of silicon substrate based on the use of atomic force microscopy (AFM) was demonstrated. A specially designed cantilever with diamond tip, allowing the formation of damaged layer on silicon substrate by a simple scratching process, has been applied instead of conventional silicon cantilever for scanning. A thin mask layer forms in the substrate at the diamond tip-sample junction along scanning path of the tip. The mask layer withstands against wet chemical etching in aqueous KOH solution. Diamond tip acts as a patterning tool like mask film for lithography process. Hence these sequential processes, called tribo-nanolithography, TNL, can fabricate 2D or 3D micro structures in nanometer range. This study demonstrates the novel fabrication processes of the micro cantilever and diamond tip as a tool for TNL using micro-patterning, wet chemical etching and CVD. The developed TNL tools show outstanding machinability against single crystal silicon wafer. Hence, they are expected to have a possibility for industrial applications as a micro-to-nano machining tool.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.355-356
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• 2012

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.711-714
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• 2004

A new design for improving the aperture ratio of bottom emission type AMOLED is investigated. In conventional, the TFT of AMOLED fabrication method is "Etch Stopper (7-mask)", so the aperture ratio is limited in 28${\sim}$33% by Cs(Storage Capacitor). A high aperture ratio TFT is designed by using BCE(Back Channel Etching 5-mask) fabrication way and the aperture ratio is up to 40% shown in 2.2"AMOLED display.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.978-982
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• 2004

We present high aspect ratio 100nm-scale nickel stamper using e-beam lithography process and Cr/Qz mask for the injection molding process of nano grating patterns. Conventional photolithography blank mask (CrON/Cr/Qz) consists of quartz substrate, Cr layer of UV protection and CrON of anti-reflection layer. We have used Cr/Qz blank mask without anti-reflection layer of CrON which is non-conductive material and ebeam lithography process in order to simplify the nickel electroplating process. In nickel electroplating process, we have used Cr layer of UV protection as seed layer of nickel electroplating. Fabrication conditions of photolithography mask using e-beam lithography are optimized with respect to CrON/Cr/Qz blank mask. In this paper, we have optimized e-beam lithography process using Cr/Qz blank mask and fabricated nickel stamper using Cr seed layer. CrON/Cr/Qz blank mask and Cr/Qz blank mask require optimal e-beam dosage of $10.0{\mu}C/cm^2$ and $8.5{\mu}C/cm^2$, respectively. Finally, we have fabricated $116nm{\pm}6nm-width$ and $240nm{\pm}20nm-height$ nickel grating stamper for the injection molding pattern.

• Korean Chemical Engineering Research
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• v.46 no.3
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• pp.465-472
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• 2008

Fabrication of nanostructured materials and synthesis of nanomaterials have intensively studied to realize electronic devices for nanotechnology. By using nanoporous alumina mask, nanostructured material can be fabricated in the form of uniform array. The size and the density of the nanostructured materials can be controllable by changing the pore diameter and the density of the alumina mask. This method is possible low cost and on large scale process, and feasible to contribute the fusion technology consisting of information technology, nanotechnology, and biotechnology. Therefore, these techniques provide alternative approaches for development of new electronic applications. In this paper, the fabrication technique and its applications of nanoporous alumina mask are described and nanostructured materials such as quantum dots, nanoholes, and nanorods are introduced.