• Title/Summary/Keyword: magnetization switching

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High Density MRAM Device Technology Based on Magnetic Tunnel Junctions (자기터널접합을 활용한 고집적 MRAM 소자 기술)

  • Chun, Byong-Sun;Kim, Young-Keun
    • Journal of the Korean Magnetics Society
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    • v.16 no.3
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    • pp.186-191
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    • 2006
  • Ferromagnetic amorphous $Ni_{16}Fe_{62}Si_8B_{14}$ and $Co_{70.5}Fe_{4.5}Si_{15}B_{10}$ layers have been devised and incorporated as free layers of magnetic tunnel junctions (MTJs) to improve MRAM reading and writing performance. The NiFeSiB and CoFeSiB single-layer film exhibited a lower saturation magnetization ($Ms=800emu/cm^3,\;and\;560emu/cm^3$, respectively) compared to that of a $Co_{90}Fe_{10}(Ms=1400emu/cm^3)$. Because amorphous ferromagnetic materials have lower Ms than crystalline ones, the MTJs incorporating amorphous ferromagnetic materials offer lower switching field ($H_{sw}$) values than that of the traditional CoFe-based MTJ. The double-barrier MTJ with an amorphous NiFeSiB free layer offered smooth surface resulting in low bias voltage dependence, and high $V_h\;and\;V_{bd}$ compared with the values of the traditional CoFe-based MTJ.

Patent Analysis of MRAM Technology (차세대 자기저항메모리 MRAM 기술의 특허동향 분석)

  • Noh, S.J.;Lee, J.S.;Cho, J.U.;Kim, D.K.;Kim, Y.K.;Yoo, Y.M.;Ha, M.Y.;Seo, J.W.
    • Journal of the Korean Magnetics Society
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    • v.19 no.1
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    • pp.35-42
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    • 2009
  • Among the next generation memory, MRAM (Magnetic Random Access Memory) is worthy of notice for substituting the preexisting memory thanks to its non-volatile property and other advantages. Recently perpendicular MRAM and spin transfer torque MRAM techniques are under active investigation to realize a high density and low power consumption. As a result, there are increasing of patents applications for high density, low current density for magnetization switching and high thermal stability. In this paper, we analyze the trend of patent applications and registrations about MRAM and propose a direction of future investigation.

Circuit Design for Noise Removal of Sine Wave Hall Sensor Signal (정현파 Hall Sensor 신호의 잡음제거를 위한 회로설계)

  • Jeong, Sungin
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.21 no.4
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    • pp.135-141
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    • 2021
  • Interest is growing in the design and development of square wave driven BLDC permanent magnet motors suitable for industrial automation, and the development of position detection circuits and drivers. However, this motor is somewhat limited in its application despite the price and functional advantages due to the decrease in efficiency due to switching loss and vibration and noise. In the process of designing and assembling a BLDC motor, the magnetic pole angle is not uniform or the magnetic flux distribution is distorted due to problems in magnetic circuit design or product non-uniformity in the assembly process. Therefore, these things cause position detection deviation and deteriorate the motor characteristics. In addition, the sine wave driven BLDC system can operate stably only when the signal generated from the position sensor is accurately fed back to the driver. However, since the generated signal cannot perform stable position detection due to the occurrence of DC offset component due to magnetic flux density deviation or magnetization technology, which is an external influence, this study intends to study the proposed circuit that can remove the DC offset component.

Thickness Dependence of Amorphous CoSiB/Pd Multilayer with Perpendicular Magnetic Anisotropy (비정질 강자성체 CoSiB/Pd 다층박막의 두께에 따른 수직자기이방성 변화)

  • Yim, H.I.
    • Journal of the Korean Magnetics Society
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    • v.23 no.4
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    • pp.122-125
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    • 2013
  • Perpendicular magnetic anisotropy (PMA) is the phenomenon of magnetic thin film which is preferentially magnetized in a direction perpendicular to the film's plane. Amorphous multilayer with PMA has been studied as the good candidate to realization of high density STT-MRAM (Spin Transfer Torque-Magnetic Random Access Memory). The current issue of high density STT-MRAM is a decrease in the switching current of the device and an application of amorphous materials which are most suitable devices. The amorphous ferromagnetic material has low saturated magnetization, low coercivity and high thermal stability. In this study, we presented amorphous ferromagnetic multilayer that consists of an amorphous alloy CoSiB and a nonmagnetic material Pd. We investigated the change of PMA of the $[CoSiB\;t_{CoSiB}/Pd\;1.3nm]_5$ multilayer ($t_{CoSiB}$ = 0.1, 0.2, 0.3, 0.4, 0.5, 0.6 nm, and $t_{Pd}$ = 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6 nm) and $[CoSiB\;0.3nm/Pd\;1.3nm]_n$ multilayer (n = 3, 5, 7, 9, 11, 13). This multilayer is measured by VSM (Vibrating Sample Magnetometer) and analyzed magnetic properties like a coercivity ($H_c$) and a magnetization ($M_s$). The coercivity in the $[CoSiB\;t_{CoSiB}\;nm/Pd\;1.3nm]_5$ multi-layers increased with increasing $t_{CoSiB}$ to reach a maximum at $t_{CoSiB}$ = 0.3 nm and then decreased for $t_{CoSiB}$ > 0.3 nm. The lowest saturated magnetization of $0.26emu/cm^3$ was obtained in the $[CoSiB\;0.3nm/Pd\;1.3nm]_3$ multilayer whereas the highest coercivity of 0.26 kOe was obtained in the $[CoSiB\;0.3nm/Pd\;1.3nm]_5$ mutilayer. Additional Pd layers did not contribute to the perpendicular magnetic anisotropy. The single domain structure evolved in to a striped multi-domain structure as the bilayer repetition number n was increased above 7 after which (n > 7) the hysteresis loops had a bow-tie shapes.