• Journal of Magnetics
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• 제6권4호
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• pp.132-141
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• 2001

The switching characteristics and the magnetization-flop behavior in magnetic tunnel junctions exchange biased by synthetic antiferromagnets (SyAFs) are investigated by using a computer simulations based on a single-domain multilayer model. The bias field acting on the free layer is found to be sensitive to the thickness of neighboring layers, and the thickness dependence of the bias field is greater at smaller cell dimensions due to larger magnetostatic interactions. The resistance to magnetization flop increases with decreasing cell size due to increased shape anisotropy. When the cell dimensions are small and the synthetic antiferromagnet is weakly, or not pinned, the magnetization directions of the two layers sandwiching the insulating layer are aligned antiparallel due to a strong magnetostatic interaction, resulting in an abnormal magneto resistance (MR) change from the high-MR state to zero, irrespective of the direction of the free-layer switching. The threshold field for magnetization-flop is found to increase linearly with increasing antiferromagnetic exchange coupling in the synthetic antiferromagnet. Irrespective of the magnetic parameters and cell sizes, magnetization flop does not exist near zero applied field, indicating that magnetization flop is driven by the Zeeman energy.

• Journal of Magnetics
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• 제14권3호
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• pp.104-107
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• 2009

The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization ($M_s$) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing $M_s$ of PELs and decreasing interlayer exchange coupling.

• Journal of Magnetics
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• 제10권2호
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• pp.48-51
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• 2005

The spin transfer induced magnetization switching has been reported to occur in magnetic multilayer structures whose scope usually consists of one stack of ferromagnetic / non-ferromagnetic / ferromagnetic (F / N / F) materials. In this work, it is shown that: 1) Copper used as a buffer layer between the free Co and the Au cap-layer can clearly increase the probability to get the spin transfer induced magnetization switching in a simple spin valve Co 11 / Cu 6/ Co 2 (nm); 2) Furthermore, when Ruthenium is simultaneously applied as a buffer layer on the Si-substrate, the critical switching currents can be reduced by $30\%$, and the absolute resistance change delta R $[{\Delta}R]$ of that stack can be enlarged by $35\%$. The enhancement of the spin transfer induced magnetization switching can be ascribed to a lower local stress in the thin Co layer caused by a better lattice match between Co and Cu and the smoothening effect of Ru on the thick Co layer.

• Journal of Magnetics
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• 제11권2호
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• pp.61-65
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• 2006

The physical origin of complex dynamic domain configuration in nonequilibrium magnetic systems with mesoscopic length scales has been studied. An increasing complexity in the spatial feature of the evolution is found to accompany the increasing reversal speed, when a ferromagnetic element is driven by progressively faster switching fields applied antiparallel to the initial magnetization direction. As reversal rates approach the characteristic precession frequencies of spin fluctuations, the thermal energy can boost the magnetization into local configurations which are completely different from those experienced during quasistatic reversal. The sensitive dependence of the spatial pattern on switching speed can be understood in terms of a dynamic exchange interaction of thermally excited spins; the coherent modulation of the spins is strongly dependent on the rise time of switching pulses.

• Journal of Magnetics
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• 제9권3호
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• pp.75-78
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• 2004

Magnetic transmission soft X-ray microscopy has been used to study element-specifically the magnetization reversal behavior of ${(Co_{84}Cr_{16})}_{87}Pt_{l3}$ alloy thin films with a lateral resolution of 35 nm. Our results indicate that the magnetization switching is carried out by a random nucleation process that can be attributed to the reversal of individual grains. We found evidence of a large distribution of the switching fields at the nanogranular length scale, which has to be considered seriously for applications of CoCrPt systems as magnetic high density storage materials.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.186-187
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• 2002

Recently, there has been much interest in magnetic thin film patterned in submicron scale because of possible ultrahigh density storage media or logical device applications [1-3]. Various geometries such as rectangle, circle, ring and ellipse type dots have been studied to find the shape showing stable switching behavior from repeated cycles. However, rectangle and circle types may not be suitable for device applications because they have two uncontrollable different magnetization reversal modes: C state and S state, resulting in different coercivity and irreproducible switching[4]. (omitted)

• 한국자기학회지
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• 제21권2호
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• pp.48-51
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• 2011

본 논문에서는 짧은 전류 펄스를 이용한 미소자기 소자에서의 전류 유도 자화 반전에 대한 매크로 스핀 시뮬레이션 연구를 수행하였다. 자화 반전 전류 분포에 있어서 에너지 장벽이 미치는 효과에 특별히 주목하였다. 자화 반전 전류의 크기 및 분포는 전류 펄스 폭의 감소에 따라 증가했다. 여기서 긴 전류 펄스 폭 영역에서는 에너지 장벽과 자화 반전 전류 분포 사이의 관계가 아레니우스-닐 법칙에 의해 서술된다. 하지만 짧은 전류 펄스 폭의 영역에서는 이 관계가 풀리지 않은 채로 남아있다. 이는 짧은 전류 펄스로 인한 자화 반전이 열적 활성화에 의해서가 아닌 세차 운동에 의해 좌우되기 때문이며, 이를 해결하는 데에 있어서 어려움이 발생한다. 그러므로 포커-플랑크 방정식을 풀어서 짧은 전류 펄스 영역에서의 자화 반전에 대한 정확한 공식을 얻어내는 것이 필요하며 이를 통해 짧은 전류 펄스 영역에서의 자화 반전 양상을 이해 할 수 있을 것으로 본다.

• Journal of Magnetics
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• 제13권4호
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• pp.120-123
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• 2008

Magnetization ringing following domain wall collision on a ferromagnetic nanowire has been investigated by micromagnetic simulation. Suppressed magnetization ringing is observed with the introduction of a small ribbon to the nanowire. Magnetization ringing has been analyzed in a frequency space by a fast Fourier transform. With the introduction of a small ribbon and/or taping of the wire, the amplitude of ringing is reduced with a shifted frequency peak.

• Journal of Power Electronics
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• 제19권1호
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• pp.158-167
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• 2019

This research comparatively studies three kinds of flux regulation methods, namely, stored capacitor discharge pulse (SCDP), constant current source pulse (CCSP), and quantitative flux regulation pulse (QFRP), which are used for hybrid permanent magnet (PM) axial field flux-switching memory machines (HPM-AFFSMMs). Through an analysis of the operation principle and the series hybrid PM flux regulation mechanism of the objective machine, the circuit topologies and flux regulation process of these flux regulation methods are addressed in detail. On the basis of a simulation, the flux regulation characteristics of the researched machine during the magnetization and demagnetization processes are comparatively evaluated. Then, machine performance, including back EMF, direct and quadrature axis inductances, and magnetization and demagnetization characteristics, is quantitatively investigated. Results show that the QFRP enables the HPM-AFFSMM to achieve a less harmonic component of back EMF by approximately 7.28% and 7.97% at the magnetization and demagnetization states, respectively, and a more complete magnetization process than the SCDP and CCSP.

• 한국자기학회지
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• 제17권5호
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• pp.188-193
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• 2007

[ $1.00{\times}0.24\;{\mu}m^2$ ] 크기의 $Ni_{80}Fe_{20}$ 박막의 자화 반전 거동을 자화 용이축으로 1 ns 이하의 펄스 자기장의 지속 시간과 세기를 변수로 인가하여 micromagnetics 시뮬레이션으로 관찰하였다. 자성 박막은 직사각형과 타원형의 모양을 가지며, 두께는 2 nm와 4 nm로 설정하였다. 실험 결과 $Ni_{80}Fe_{20}$ 박막의 두께와 모양에 따라 각각 다른 경향을 보이는 것을 확인할 수 있었다. 박막의 두께에 따라 두께 방향으로 형성되는 반자장의 크기 차에 의해 edge domain에서 스핀의 회전속도와 스핀 스위칭의 거동에 차이가 생기며, 박막이 두꺼울수록 자화 반전에 더 긴 펄스 지속 시간과 강한 펄스 자기장이 필요하다는 것을 확인하였다. 한편, 자화 반전이 예상되는 영역에서 자화 반전이 일어나지 않는 비정상적인 자화 반전 영역을 발견할 수 있었는데, 박막의 모양이 타원일 때와 박막의 두께가 얇은 경우에 그 영역이 더욱 불규칙적이고, 넓게 분포하였다. 이러한 현상은 막의 두께가 매우 얇기 때문에 두께 방향으로 형성된 강한 반자장의 영향에 의해 나타나는 것으로 여겨진다. Edge domain이 더 많은 직사각형 모양의 경우 자화반전이 일어나는 동안 자기모멘트의 세차 운동에 의해 생기는 $M_z$ 성분, 즉 두께방향으로 형성된 반자장이 더 작고, 이에 따라 자화 반전이 예상되는 영역에서 자화 반전이 일어나지 않는 비정상적인 자화 반전 영역이 더 적어짐을 확인하였다. 본 시뮬레이션 결과는 자성박막의 안정된 고속 자화반전을 위해서는 반자장의 영향을 최소화하는 것이 중요하다는 것을 보여준다.