• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1723-1724
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• 2006

자기누설탐상법은 비파피검사 방법의 하나로 대상물체를 외부에서 착자시켜 함이 발생할 경우에 결함부위에서 자기누설이 발생하도록 하여, 누설된 자기장을 측정하여 결함의 유무와 크기 등을 판정하는 시스템이다. 본 논문에서는 MFL 방식의 범용 NDT 검사기의 개발을 위해 영구자석을 이용하여 소형 비파괴 검사기를 설계하고, 3차원 유한요소법을 이용하여 해석하고 실제 데이터를 측정하여 그 결과를 비교 분석하였다.

• Korean Journal of Remote Sensing
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• v.21 no.1
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• pp.3-13
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• 2005

National Research Lab Project 'Optimal Data Fusion of Geophysical and Geodetic Measurements for Geological Hazards Monitoring and Prediction' supported by Korea Ministry of Science and Technology is briefly described. The research focused on the geohazard analysis with geophysical and geodetic instruments such as superconducting gravimeter, seismometer, magnetometer, GPS, and Synthetic Aperture Radar. The aim of the NRL research is to verify the causes of geological hazards through optimal fusion of various observational data in three phases: surface data fusion using geodetic measurements; subsurface data fusion using geophysical measurements; and, finally fusion of both geodetic and geophysical data. The NRL hosted a special session 'Geohazard Monitoring with Space and Geophysical Technology' during the International Symposium on Remote Sensing in 2004 to discuss the current topics, challenges and possible directions in the geohazard research. Here, we briefly describe the special session papers and their relationships to the theme of the special session. The fusion of satellite and ground geophysical and geodetic data gives us new insight on the monitoring and prediction of the geological hazard.

• Proceedings of the Korean Magnestics Society Conference
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• 2012.05a
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• pp.28-28
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• 2012

• Proceedings of the Korean Magnestics Society Conference
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• 2016.11a
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• pp.204-204
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• 2016

• Proceedings of the Korean Magnestics Society Conference
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• 2016.05a
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• pp.167-168
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• 2016

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.66-67
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• 2003

Bismuth (Bi) has been an attractive materials for studying spin dependent transport properties because it shows very large magnetoresistance (MR) resulting from its highly anisotropic Fermi surface, low carrier concentrations, long carrier mean free path 1 and small effective carrier mass m*[1-3]. With all the intriguing properties, difficulty in fabrication of high quality Bi thin films may have prevented extensive application of Bi in magnetic field sensing and spin-injection devices. Previous works found that the surface roughness and small grain size in 100-200 nm of Bi thin film made by evaporation and sputtering are major causes of low MR. Although relatively higher MR in electrodeposited Bi followed by annealing was reported, it still suffers from rough sulfate roughness which is so severs that it is hardly able to make a field sensing and spin-injection device using conventional photolithography process.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.522-529
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• 2000

We present a new procedure to evaluate the residual life of 1Cr-1Mo-0.25V steel by reversible magnetic permeability. The method is based on the existence of the first harmonics in the differential magnetization around the coercive force. The apparatus is based on the detection of the voltage induced in a coil using a lock-in amplifier tuned to a frequency of the exciting one. Results obtained for the first harmonics and Vickers hardness on the aged samples show that the peak interval of reversible permeability and Vickers hardness decrease as ageing time increases. The correlation between Vickers hardness and the peak interval of the reversible permeability could well be used to evaluate the residual life of 1Cr-1Mo-0.25V steel, nondestructively.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.230-238
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• 2000

We present the magnetisation reversal dynamics of epitaxial Fe thin films grown on GaAs(001) and InAs(001) studied as a function of field sweep rate in the range 0.01-160 kOe/s using magneto-optic Kerr effect (MOKE). For 55 and 250 ${\AA}$ Fe/GaAs(001), we find that the hysteresis loop area A follows the scaling relation A ∝ H$\^$${\alpha}$/ with ${\alpha}$=0.03∼0.05 at low sweep rates and 0.33-0.40 at high sweep rates. For the 150 ${\AA}$ Fe/InAs(001) film, ${\alpha}$ is found to be ∼0.02 at low sweep rates and ∼0.17 at high sweep rates. The differing values of ${\alpha}$ are attributed to a change of the magnetisation reversal process with increasing sweep rate. Domain wall motion dominates the magnetisation reversal at low sweep rates, but becomes less significant with increasing sweep rate. At high sweep rates, the variation of the dynamic coercivity H$\sub$c/ is attributed to domain nucleation dominating the reversal process. The results of magnetic relaxation studies for easy-axis reversal are consistent with the sweeping of one or more walls through the entire probed region (∼100 $\mu\textrm{m}$). Domain images obtained by scanning Kerr microscopy during the easy cubic axis reversal process reveal large area domains separated by zigzag walls.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.337-345
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• 2000

The spontaneous Hall effect in amorphous Tb-Fe and Sm-Fe thin films, which possess excellent magnetic softness, is investigated in this work to seek a possibility of practical applications of these thin films as sensors. The resistivity of Tb-Fe thin films ranges from 180 to 250 Ωcm as the Tb content varies from 35 to 46 at. %. Tb-Fe thin films show negative Hall resistivity ranging from - 7.3 to - 5.0 Ωcm in the same composition range, giving the normalized resistivity ratio in the range of -4.1 to -2.0 %. On the other hand, the resistivity of Sm-Fe thin films ranges from 150 to 166 Ωcm as the Sm content varies from 22 to 31 at. %. Sm-Fe thin films show positive Hall resistivity which varies from 7.1 to 2.8 Ωcm in the same composition range, giving the normalized resistivity ratio in the range of 4.8 to 1.7 %. These values are significantly high compared with the values of other R-T alloys, Tb-Co alloys for example, where the highest reported value is 2.5 %. Between the two different sets of samples, Tb-Fe thin films with perpendicular anisotropy are considered to be more suitable for practical applications, since saturation is reached at a los magnetic field, approximately 2 kOe in a Tb$\sub$35.1/ Fe$\sub$64.9/ thin film, for example.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.24-24
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• 2003

Metallic magnetoelectronic devices have studied intensively and extensively for last decade because of the scientific interest as well as great technological importance. Recently, the scientific activity in spintronics field is extending to the hybrid devices using ferromagnetic/semiconductor heterostructures and to new ferromagnetic semiconductor materials for future devices. In case of the hybrid device, conductivity mismatch problem for metal/semiconductor interface will be able to circumvent when the device operates in ballistic regime. In this respect, spin-valve transistor, first reported by Monsma, is based on spin dependent transport of hot electrons rather than electron near the Fermi energy. Although the spin-valve transistor showed large magnetocurrent ratio more than 300%, but low transfer ratio of the order of 10$\^$-5/ prevents the potential applications. In order to enhance the collector current, we have prepared magnetic tunneling transistor (MTT) with single ferromagnetic base on Si(100) collector by magnetron sputtering process. We have changed the resistance of tunneling emitter and the thickness of baser layer in the MTT structure to increase collector current. The high transfer ratio of 10$\^$-4/ range at bias voltage of more than 1.8 V, collector current of near l ${\mu}$A, and magnetocurrent ratio or 55% in Si-based MTT are obtained at 77K. These results suggest a promising candidate for future spintronic applications.