• 한국표면공학회지
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• 제44권6호
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• pp.255-259
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• 2011

The thickness dependence of magnetic properties was experimentally investigated in nanocrystalline Fe-Hf-N thin films fabricated by a RF magnetron sputtering method. In order to investigate the thickness effect on their magnetic properties, the films are prepared with different thickness ranges from 90 nm to 330 nm. It was revealed that the coercivity of the thin film increased with film thickness. On the contrary, the saturation magnetization decreased with film thickness. On the basis of the SEM and TEM, an amorphous phase forms during initial growth stage and it changes to crystalline structure after heat treatment at $550^{\circ}C$. Nanocrystalline Fe-Hf-N particles are also generated.

• E2M - 전기 전자와 첨단 소재
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• 제10권8호
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• pp.813-818
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• 1997

In this study the thin film air core and magnetic core inductors consisting of planar coil and/or CoNbZr amorphous magnetic layers on a Si substrate were fabricated as spiral type by using rf magnetron sputtering and wet etching methods. The etchant solution was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec which etched Cu films and CoNbZr/Cu/CoNbZr multi-layer films. They were about 10${\mu}{\textrm}{m}$ of thickness and 10$\times$10 mm$^2$of size. The properties of thin film magnetic core inductor were 400 nH of Q value at 10 MHz and the resonance frequency was about 300 MHz.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.212-214
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• 1994

At recent time, superconducting technology makes it possible to develop various devices using strong magnetic fields. As increasing with devices using high magnetic fields, magnetic shielding technology is essential in order to get high efficiency. Therefore it is necessary to establish production method and clear characteristics of suitable shielding materials. Usually, ferromagnetic metal has been used for shielding of high magnetic fields up to the present time. Instead of heavy ferromagnetic metal, we can acquire better upgraded shielding system by using of very light superconducting thin film that has a perfect diamagnetism. We would like to study basic characteristics of NbTi thin film produced by RF sputtering, investigated morphology and crystal structure of NbTi thin film by SEM and XRD, identified superconductivity measuring by critical current.

• Journal of Magnetics
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• 제13권2호
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• pp.57-60
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• 2008

This study examined the effect of various types of epitaxial strain on the magnetic properties of $SrRuO_3$ thin films. Epitaxial $SrTiO_3$ (001), $SrTiO_3$ (110), and $SrTiO_3$ (111) substrates were used to apply different crystal symmetries to the grown films. The films were grown using pulsed laser deposition. The X-ray diffraction patterns of the films grown under optimum conditions showed very clear peaks for the $SrRuO_3$ film and $SrTiO_3$ substrates. The saturated magnetic moment at 5 K after 7 Tesla field cooling was $1.2-1.4\;{\mu}_B$/Ru. The magnetic easy axis for all three types of films was along the surface normal. The magnetic transition temperature for the $SrRuO_3$ film with lower symmetry was slightly larger than the $SrRuO_3$ film with higher symmetry.

• 한국전기전자재료학회논문지
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• 제23권2호
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• pp.153-158
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• 2010

The crystallization of FePt/MgO(001) magnetic thin films of various thicknesses has been studied using synchrotron x-ray scattering, atomic force microscope, and vibrating sample magnetometer. In film with a 499-$\AA$-thick, face-centered tetragonal, ordered FePt phase was dominantly crystallized into perpendicular (001) grains keeping the magnetically easy c-axis normal to the film plane during annealing. In film with a 816-$\AA$-thick, however, longitudinal (110) grains keeping the c-axis parallel to the film plane were grown on top of the perpendicular (001) grains. The behavior of the magnetic properties was consistent with the thickness dependence of the crystallization. We attribute the thickness dependence of the crystallization to the substrate effect, which prefers the growth of the c-axis oriented perpendicular grains near the film/substrate interfacial area.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제48권11호
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• pp.617-624
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• 1999

The spiral type thin-film inductor performed in high frequency at 2-5[MHz] range is analyzed by 2-dimensional Finite Element Method(2D FEM). The features of micro thin-film inductor have complicated electromagnetic phenomenon such as skin effect, proximity effect and magnetic saturation. To develope miniatured magnetic device considering these features, it is important to predict the property of the thin film inductor according to design parameter. In this paper, we present the 2D FEM analysis for the spiral type thin film inductor. The characteristics of inductor from point of view of inductance, resistance and quality factor are studied according to design parameter and various pattern construction.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
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• pp.363-364
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• 2000

• Journal of Magnetics
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• 제3권2호
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• pp.55-63
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• 1998

Magnetic and magnetostrictive properties of amorphous Sm-Fe and Sm-Fe-B thin films are systematically investigated over a wide composition range from 14.1 to 71.7 at.% Sm. The films were fabricated by rf magnetron sputtering using a composite target composed of an Fe (or Fe-B) plate and Sm chips. The amount of B added ranges from 0.3 to 0.8 at. %. The microstructure, examined by X-ray diffraction, mainly consists of an amorphous phase in the intermediate Sm content range from 20 to 45 at.%. Together with an amorphous phase, crystalline phases of Fe and Sm also exist at low and high ends of the Sm content, respectively. Well-developed in-plane anisotropy is formed over the whole compositionrange, except for the low Sm content below 15 at.% and the high Sm content above 55 at %. As the Sm content increases, the saturation magnetization decreases linearly and the coercive force tends to increase, with the exception of the low Sm content where very large magnitudes of the saturation magnetization and the coercive force are observed due to the existence of the crystalline $\alpha$-Fe phase. The coercive force is affected rather substantially by the B addition, resulting in lower values of the coercive force in the practically important Sm content range of 30 to 40 at.%. Good magnetic softness indicated by well-developed in-plane anisotropy, a square-shaped hysteresis loop and a low magnitude of the coercive force results in good magnetostrictive characteristics in both Sm-Fe-B thin films. The magnetostrictive characteristics, particularly at low magnetic fields, are further improved by the addition of B; for example, at a magnetic field of 100 Oe, the magnitude of magnetostriction is -350 ppm in a Sm-Fe thin film and it is -470 ppm in a B containing Sm-Fe thin film.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.313-313
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• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.

• Applied Science and Convergence Technology
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• 제27권1호
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• pp.1-4
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• 2018

A sputtering-assisted magnetic field system was successfully developed for depositing crystalline Cu thin films at room temperature. This system employs a plasma source and an ion-beam gun with two magnetic field generators, which is covered with sputtering target and the ion-beam gun, simultaneously serving as sputtering plasma and a magnetic field generator. The formation of crystalline Cu thin films at room temperature was dominated by magnetic fields, which was revealed by preliminary experiments. This system can be employed for producing crystalline metal thin films at room temperature.