• The KSFM Journal of Fluid Machinery
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• v.6 no.1 s.18
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• pp.37-43
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• 2003

Natural convection of a magnetic fluid is different from that of Newtonian fluids because a magnetic body force exists in an addition to gravity and buoyancy forces. In this paper, the natural convection of a magnetic fluids (W-40) in a rectangular enclosure is investigated by numerical and experimental methods. One side wall is kept at a constant temperature ($25^{\circ}C$), and the opposite side wall is also kept at a constant temperature ($20^{\circ}C$), Under above conditions, the magnitude of the magnetic fields were varied and applied. GSMAC scheme is used for the numerical method, and the thermo-sensitive liquid crystal film (R20C5A) is utilized in order to visualize wall-temperature distributions as an experimental verification. This study has resulted in the following fact that the natural convection of a magnetic fluid is controlled by the direction and intensity of the magnetic fields.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.313-313
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• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.

• Proceedings of the Korean Magnestics Society Conference
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• 1993.11a
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• pp.88-88
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• 1993

• Proceedings of the Korean Magnestics Society Conference
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• 1999.04a
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• pp.38-39
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.97-97
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• 1999

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.113-116
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• 1994

InSb thin film magnetic sensor, which have been prepared on glass substrate by vacuum evaporation, is investigated in this paper. The dependance of Hall voltage on magnetic field and temperature is examined by Hall effect. The variation of Hall voltage with magnetic field is almost linear at constant current drive but it is deviated from the linearity at constant voltage drive. Hall voltage decreases as the ambient temperature increases, so it is necessary to take into account the temperature effect when the InSb thin film is used as magnetic sensor.

• Journal of Magnetics
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• v.5 no.2
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• pp.55-58
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• 2000

Local magnetic properties and magnetization distributions on the air-bearing surface of a thin-film magnetic head have been studied by using scanning magneto-optical Kerr microscopy. The examined head was a merged MR read/inductive writing head with a write gap equal to 0.3 $\mu m$. Sizes of top and bottom pole-tips on the air-bearing surface of the writing head were equal to $3\mu m\times3\mu m$ and $3\mu m\times30\mu m$, respectively, The measured magnetic characteristics on the head air-bearing surface were found to be very sensitive to the head design. In particular, magnetization distributions were discovered to have asymmetrical shape. Maximum magnitudes of the magnetization were located near the shorten pole-tip. So, it was experimentally proved that more magnetic flux emanates just from this part of the air-bearing head surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.190-191
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• 1994

In this paper, We study on the fabrication of amorphous this film of zeromagnetostriction material and the magnetic properties. This films are fabricated by using sputtering method with input power of 400∼607[W], Ar gas pressure of 3∼ 9[mTorr] and target composition of Fe$\sub$4.7/ Co$\sub$74.3/Si$_2$B$\sub$19/. Sample this films with diameter of 14[mm ] and thickness of 27-30[$\mu\textrm{m}$] were obtained through experiments. When we analyzed the magnetic properties before and after annealing with sample thin films, we confirmed that magnetic domain wall amorphous thin films consisted for Neel magnetic domain wall with the width of about 1[$\mu\textrm{m}$].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.883-887
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• 2006

In order to attain high-rate deposition of Mn-Zn ferrite thin film for soft magnetic underlayer in perpendicular magnetic recording media, a reactive sputtering using powder-metal targets under the mixture gas of Ar and $O_{2}$ was performed. It was succeeded that Mn-Zn ferrite films with (111) crystal orientation were deposited on Pt(111) underlayer without any annealing process. The film revealed 3.4 kG of 4 ${\pi}Ms$, 70 Oe of coercivity. The deposition rate of the new method was 16 times as high as that of the conventional method using ferrite target.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.200-201
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• 2002

Recently, a countermeasure for the electromagnetic noise emission on RF integrated transmission line using the loss generation of ferromagnetic thin films is briefly suggested$\^$1,2/. Without the magnetic film, the noise harmonics of the signal pass through the transmission line with only a little attenuation. The ideal role of magnetic film is not to raise insertion losses in the pass-band and to give as large attenuation as possible to eliminate the noise harmonics at the stop-band, the frequency range higher than the meaningful signal as shown in Fig. 1. and Fig. 2. (omitted)