• 한국표면공학회지
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• 제49권1호
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• pp.81-86
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• 2016

$Eu^{3+}$-doped $MgMoO_4$ phosphor thin films were deposited on quartz substrates by radio frequency magnetron sputtering with changing various growth temperatures. The effects of growth temperature on the structure, transmittance, optical band gap, and luminescence of the phosphor thin films were characterized. All the phosphor thin films, irrespective of growth temperature, showed a monoclinic structure with a main (220) diffraction peak. The thin film deposited at a growth temperature of $400^{\circ}C$ indicated an average transmittance of 90% in the wavelength range of 500 ~ 1100 nm and band gap energy of 4.81 eV. The excitation spectra of the phosphor thin films consisted of a broad charge transfer band peaked at 284 nm in the range of 230 ~ 330 nm and two weak peaks located at 368 and 461 nm, respectively. The emission spectra under ultraviolet excitation at 284 nm exhibited a sharp emission peak at 614 nm and several weak bands. All the phosphor thin films showed high asymmetry ratio values, indicating that $Eu^{3+}$ ions incorporated into the host lattice occupied at the non-inversion symmetry sites. The results suggest that the growth temperature plays an important role in growing high-quality phosphor thin films.

• 한국전기전자재료학회논문지
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• 제29권9호
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• pp.546-551
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• 2016

$SrSnO_3:Tb^{3+}$ phosphor thin films were prepared on sapphire and quartz substrates in the growth temperature range of $100{\sim}400^{\circ}C$ by using the radio frequency magnetron sputtering deposition. The resulting $SrSnO_3:Tb^{3+}$ thin films were characterized by X-ray diffraction, scanning electron microscopy, ultraviolet-visible-infrared spectrophotometer, and photoluminescence spectrometer. The results indicated that the morphology, optical transmittance, band gap energy, and luminescence intensity of the phosphor thin films significantly depended on the growth temperature. All the thin films, regardless of the type of substrate, showed an amorphous behavior. As for the thin films deposited on sapphire substrate, the maximum crystallite size was obtained at a growth temperature of $400^{\circ}C$ and the strongest emission was green at 544 nm arising from the $^5D_4{\rightarrow}^7F_5$ transition of Tb3+. The average optical transmittance for all the thin films grown on sapphire and quartz substrates was decreased as the growth temperature increased from 100 to $400^{\circ}C$. The results suggest that the optimum growth temperatures for depositing highly-luminescent $SrSnO_3:Tb^{3+}$ phosphor thin films on sapphire and quartz substrates are 400 and $300^{\circ}C$, respectively.

• 한국세라믹학회지
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• 제56권1호
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• pp.98-103
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• 2019

Optical filters to control light wavelength of displays or cameras are fabricated by multi-layer stacking process of low and high index thin films. The process of multi-layer stacking of thin films has received much attention as an optimal process for effective manufacturing in the optical filter industry. However, multi-layer processing has disadvantages of complicated thin film process, and difficulty of precise control of film morphology and material selection, all of which are critical for transmittance and coloring effect on filters. In this study, the composite $TiO_2$, which can be used to control of UV absorption, coated on nano hollow silica sol, was synthesized as a coating material for optical filters. Furthermore, systematic analysis of the process parameters during the chemical reaction, and of the structural properties of the coating solutions was performed using SEM, TEM, XRD and photo spectrometry. From the structural analysis, we found that the 85 nm nano hollow silica with 2.5 nm $TiO_2$ shell formation was successfully synthesized at proper pH control and titanium butoxide content. Photo luminescence characteristics, excited by UV irradiation, show that stable absorption of 350 nm-light, correlated with a 3.54 eV band gap, existed for the $TiO_2$ shell-nano hollow silica reacted with 8.8 mole titanium butoxide solution. Transmittance observed on substrate of the $TiO_2$ shell-nano hollow silica showed effective absorption of 200-300 nm UV light without deterioration of visible light transparency.

• 마이크로전자및패키징학회지
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• 제26권1호
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• pp.23-28
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• 2019

타이타니아 ($TiO_2$)는 독성이 없고 매우 높은 굴절률, 촉매 활성 및 생체 적합성을 지니고 있으며 화학적 안정성이 있고 높은 이방성을 갖는 저렴한 재료로써 다양한 분야에서 각광받고 있는 세라믹 소재이다. 이러한 $TiO_2$를 sol-gel법을 이용하여 나노입자화 하였다. 나노입자 형성중에 pH를 조절하여 $TiO_2$의 결정성을 제어하였다. 합성된 나노입자는 엑스선 회절분석법, 퓨리에 분광기(Fourier transform infrared), 전계방사형 주사전자현미경(field emission scanning electron microscopy)과 포토루미네선스(photoluminescence spectroscopy)를 이용하여 분석하였다. 합성된 $TiO_2$ 나노입자는 5 nm 이하의 크기를 갖는 것을 확인하였다. 나노입자의 결정성이 증가됨에 따라 550 nm 영역의 발광세기가 증가함을 확인하였다. 이러한 결과로 $TiO_2$ 나노입자의 결정성 조절을 통한 발광 특성 조절을 기대할 수 있다.

• Current Applied Physics
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• 제18권11호
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• pp.1458-1464
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• 2018

An improved method for the preparation of g-$C_3N_4$ is described. Currently, heating (> $400^{\circ}C$) of urea is the common method used for preparing the g-$C_3N_4$. We have found that sonication of melamine in $HNO_3$ solution, followed by washing with anhydrous ethanol, not only reduce the crystallite size of g-$C_3N_4$ but also facilitate intriguing electronic structure and photoluminescence (PL) properties. Moreover, loading of metal (Pt and Ag) nanoparticles, by applying the borohydride reduction method, has resulted in multicolor-emission from g-$C_3N_4$. With the help of PL spectra and local electronic structure study, at C K-edge, N K-edge, Pt L-edge and Ag K-edge by X-ray absorption spectroscopy (XAS), a precise mechanism of tunable luminescence is established. The PL mechanism ascribes the amendments in the transitions, via defect and/or metal states assimilation, between the ${\pi}^*$ states of tris-triazine ring of g-$C_3N_4$ and lone pair states of nitride. It is evidenced that interaction between the C/N 2p and metal 4d/5d orbitals of Ag/Pt has manifested a net detraction in the ${\delta}^*{\rightarrow}LP$ transitions and enhancement in the ${\pi}^*{\rightarrow}LP$ and ${\pi}^*{\rightarrow}{\pi}$ transitions, leading to broad PL spectra from g-$C_3N_4$ organic semiconductor compound.

• 한국재료학회지
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• 제32권10호
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• pp.425-428
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• 2022

In this study, Y₃Al₅O₁₂:Eu³⁺ red phosphors were synthesized at different temperatures using a solid state reaction method. The crystal structures, surface and optical properties of the Y₃Al₅O₁₂:Eu³⁺ red phosphors were investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), and photoluminescence (PL) analyses. From XRD results, the crystal structure of the Y₃Al₅O₁₂:Eu³⁺ red phosphors was determined to be cubic. The maximum emission spectra were observed for the Y₃Al₅O₁₂:Eu³⁺ red phosphor prepared by annealing for 4h at 1,700 ℃. The 565~590 nm photoluminescent spectra of the Y₃Al₅O₁₂:Eu³⁺ red phosphors is associated with the ⁵D₀ → ⁷F₂ magnetic dipole transition of the Eu³⁺ ions. The intensity of the photoluminescent spectra in the red phosphors is more dominant for the magnetic dipole transition than the electric dipole transition with increasing annealing temperature. The International Commission on Illumination (CIE) coordinates of Y₃Al₅O₁₂:Eu³⁺ red phosphors prepared by 1,700 ℃ annealing temperature are X = 0.5994, Y = 0.3647.

• 한국전기전자재료학회논문지
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• 제37권1호
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• pp.68-73
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• 2024

In this study, the praseodymium-doped yttrium phosphate (YPO₄:Pr³⁺) powder, which is well known for its high luminescent efficiency, and long life in the UV range, was synthesized with various content ratios of Pr₆O₁₁ and calcination temperature. Crystal structure and luminescent properties of various phosphor powders based on different concentrations and calcination conditions were characterized by XRD (X-Ray Diffraction) and PL (photoluminescence) spectrometers. From the XRD analysis, the structure of YPO₄:Pr³⁺ which is calcinated at 1,200℃ was stable tetragonal phase and crystal size was calculated about 25 nm by Scherrer equation. PL emission of YPO₄:Pr³⁺ with a different content ratio of Pr₆O₁₁ by excitation λ_exc=250 nm shows that 0.75 mol% phosphor powder has maximum PL intensity and PL decreases with the increase of the ratio of Pr₆O₁₁ up to 1.25 mol% which is caused by changes of crystallinity of phosphor powders. With increasing dopant ratio, photo-luminescence Emission decreases due to Concentration quenching, which is commonly observed in phosphors. Currently, 0.75 mol% is considered the optimal doping concentration. A hybrid ultraviolet-emitting device incorporating YPO₄:Pr³⁺ fluorescent material with plasma discharge was fabricated to enhance UV germicidal effects while minimizing ozone generation. UV emission from the plasma discharge device was shown at about 200 nm and 350 nm which caused additional emission of the regions of 250 nm, 315 nm, and 370 nm from the YPO₄:Pr³⁺ phosphor.

• Nuclear Engineering and Technology
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• 제55권12호
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• pp.4642-4646
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• 2023

The Tb³⁺ or Eu³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor were fabricated by funace at 1500 ℃ for 12 h using a solid state reaction. The XRD (X-ray diffraction_Panalytical X'Pert Pro) and FE-SEM (field emission scanning electron microscope) are measured to confirm the crystalline structure and surface morphology of the phosphor. The Tb³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor emits the lights in 470~650 nm wavelength range due to transitions from ⁵D₄ to ⁷F_j. Therefore, it shows the green region in the CIE chromaticity diagram under both UV and X-rays excitations. The Eu³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor emits the lights in 550~750 nm wavelength range because of ⁵D_i to ⁷F_j. The emission is confirmed to be in the red region using the CIE chromaticity diagram. The Tb³⁺ or Eu³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor shows the characteristic f-f transition with a long decay time, which is about several milliseconds. They have the high efficiency of light emission for X-ray because of their high effective Z number (Z_eff = 58.5) and density. Therefore, they are very much promising phosphors for X-ray imaging application in medical fields.

• 한국결정성장학회지
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• 제17권4호
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• pp.156-159
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• 2007

본 연구에서는 장파장 UV 영역하에서 비교적 우수한 발광강도를 가지는 적색 형광체를 얻기 위하여 고상법으로 합성하여 발광특성을 관찰하였다. $SrAl_{12}O_{19}:Mn^{4+}$ 적색 형광체의 발광강도는 $Mn^{4+}$의 $^2E\to^4A_2$ 천이 때문에 643, 656, 666, 671 nm에서 4개의 sharp한 peak이 $600{\sim}700 nm $의 영역에서 발생하였으며, 여기 스펙트럼은 $250{\sim}550 nm$ 넓은 영역에서 338, 398, 468nm 3개의 peak이 발생하였다. 또한 $SrAl_{12}O_{19}:Mn^{4+}$에 0.67mol% MgO를 함유한 $SrAl_{12}O_{19}:Mn^{4+}$의 상대적인 발광강도는 $SrAl_{12}O_{19}:Mn^{4+}$ 보다 약 30% 정도 증가하였는데, 이러한 원인은 MgO가 첨가되어 $Al_2O_3$ 부분에 대체되어진 것으로 사료된다. 또한, 발광강도를 향상시키기 위하여 0.67mol% MgO를 함유한 $SrAl_{12}O_{19}:Mn^{4+}$ 시료에 $CaF_2$를 첨가하였다. 0.67mol% $CaF_2$와 0.67mol% MgO를 함유한 $SrAl_{12}O_{19}:Mn^{4+}$의 656nm에서의 상대적인 발광강도는 융제를 첨가하지 않은 $SrAl_{12}O_{19}:Mn^{4+}$보다 약 48% 이상 증가하였다.

• Korean Chemical Engineering Research
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• 제49권3호
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• pp.320-324
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• 2011

TOPO/TOP로 안정화된 CdSe 반도체 발광 나노입자를 용해열 방법을 이용하여 합성하였다. 합성 온도 및 시간 조절을 통하여 540 nm 녹색 발광과 620 nm 적색발광 CdSe 나노입자를 얻었다. 형광체 변환 백색 발광다이오드(LED)는 460 nm 발광 InGaN 발광다이오드(LED) 여기원(excitation)과 540, 620 nm 발광 CdSe 나노입자 형광체를 결합하여 제작하였다. CdSe 나노입자 형광층은 녹색과 적색이 혼합된 단층과 분리된 다층구조로 이루어졌으며, 형광층 구성에 따른 백색 LED 소자의 특성 차이를 비교하였다. 단층구조 백색 LED는 20 mA에서 5.78 lm/W의 효율을 가지며, 형광층 내에서의 에너지 전이로 인하여 적색광이 강한(0.36, 0.45)의 색좌표를 보였다. 반면 다층 구조 백색광 LED는 20 mA에서 7.28 lm/W의 효율과 순수 백색광 영역인(0.32, 0.34)의 색좌표를 나타냈다. 또한, 400 nm의 청자색 LED를 여기원으로 적용 시, 소자의 효율이 8.76 lm/W로 증가하였다.