Growth Temperature Effects of In0.4Al0.6As Buffer Layer on the Luminescence Properties of InGaAs/InAlAs Quantum Well Structures (InGaAs/InAlAs 양자우물구조의 발광특성에 대한 In0.4Al0.6As 버퍼층 성장온도의 영향)
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- Journal of the Korean Vacuum Society
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- v.20 no.6
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- pp.449-455
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- 2011