• 제목/요약/키워드: luminescence enhancement

검색결과 36건 처리시간 0.028초

수열처리법에 의한 아프리카산 천연루비의 색상개선 및 특성평가 (Color enhancement and characteristics of natural rubies originated in Africa by the hydrothermal treatment method)

  • 박춘원
    • 한국결정성장학회지
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    • 제15권4호
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    • pp.145-151
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    • 2005
  • 어두운 적색을 나타내는 아프리카산 천연루비의 색상개선을 열처리법과 수열처리법을 이용하여 행한 결과, 열처리법은 색상이 떨어지는 역효과가 발생하였다. 그러나 수열처리법의 경우에는 색상과 투명도가 향상되었다. 아프리카산 천연루비의 색상개선에 대한 수열처리 조건은 다음과 같다. 즉, 수열용매 1M $Na_2CO_3-0.9M\;K_2CO_3$, 반응온도: $450^{\circ}C$, 반응 시간: 48hrs, 충전율: $30\%$, 압력: 375atm이었다. 이와 같은 조건에서 얻어진 루비의 특성을 평가한 결과, ICP/MS와 XRF 분석결과로부터 수열처리 후 $Cr^{3+},\;Fe^{3+},\;Ti^{4+}$ 등의 함량이 수열처리 전의 루비에 비해 감소됨을 알 수 있었으며, 이로 인하여 적색이 밝아지는 것을 색차계 분석결과로부터 알았다. 이 결과는 수열처리 전과 비교하였을 때 $Cr^{3+}$ 이온의 전자전이에 의해 발생되는 발광피크의 강도가 수열처리 후 감소한 PL분석결과와 잘 일치하였다.

Analysis of Enhancement in Phosphor Performance induced by Surface Treatments

  • Jeon, Duk-Young;Bukesov, Sergey A.;Kim, Jin-Young;Park, Zin-Min;Lee, Dong-Chin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.370-373
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    • 2003
  • A search for a new phosphor composition of excellent performance in systematic ways requires lots of research efforts, and often turns out to be very timeconsuming and difficult. Thus, usually practical ways are taken to improve the performance of phosphors. A few examples of practical surface treatments on phosphors such as $In_2O_3$ coating on $ZnGa_2O_4:Mn$, phosphoric acid treatment on ZnS:Ag,Cl, and base KOH treatment with ultrasonication on ZnS:Ag,Cl are presented. The reasons for the improvement of luminescence intensity or degradation properties after these treatments are discussed based upon careful analyses on the surface of the phosphors and a proposed model on charge carriers generated by electron beam excitation.

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New Phosphor and Material Structures for Displays

  • Summers, Christopher J.;King, Jeffrey;Park, Woun-Jhang
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.243-252
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    • 2002
  • We propose a new concept: that of photonic crystal phosphors (PCPs) for display and phosphor related applications. It is well known that microcavities with dimensions comparable to the emitting wavelength strongly enhance light-matter interactions, resulting in a significant increase in spontaneous emission rate, which can be directly translated into enhancement in phosphor efficiency. In recent simulations we have demonstrated that when a microcavity is formed in a nano-phosphor structure, the luminescence band is modified, and can be made spectrally sharp and tunable by engineering the geometry/material properties of the cavity and the surrounding photonic crystal lattice. New phosphor material structures based on photonic crystals are proposed. Applications to thin film EL phosphors and particle phosphors are discussed. Additionally, economic methods of synthesizing and incorporating PCPs into current display applications are proposed.

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다양한 표면산란체에 의한 내부산란체 도광판 휘도 성능 분석 (The luminance variation of inner-scatterer light guide panel by various surface-scatterer)

  • 최영희;신용진;최은서
    • 통합자연과학논문집
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    • 제1권1호
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    • pp.32-35
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    • 2008
  • We fabricated surface pattern on a light guide panel (LGP) using $CO_2$ laser to improve the luminescence performance of inner-scatterer LGP, which is made of PMMA sample with exploiting Q-switched $2^{nd}$ harmonic Nd:YAG laser engraving system, and the effect of surface pattern in the brightness distribution of LGP was analysed. To prove the feasibility of proposed method in the enhancement of LGP performance, we designed three different surface patterns on the inner-scatterer LGP. The experimental results has proved the potential in the application of surface pattern to increasing the brightness of inner-scatterer LGP.

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NiO/AZO anode를 적용한 OLED의 정공주입 향상에 관한 연구 (A study on the enhancement of hole injection in OLED using NiO/AZO Anode)

  • 진은미;송민종;김진사;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.444-445
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    • 2007
  • Aluminum-doped zinc oxide (AZO) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with indium tin oxide (ITO). AZO films have been deposited on glass (coming 1737) substrates by RF magnetron sputtering system. An ultrathin layer of nickel oxide (NiO) was deposited on the AZO anode to enhance the hole injections in organic light-emitting diodes (OLED). The current density-voltage and luminescence-voltage properties of devices were studied and compared with ITO device.

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Luminescence properties of $ZnGa_{2}O_{4}$ based phosphors

  • Singh Binod Kumar;Ryu Hojin;Chang Ho-Jung
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
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    • pp.35-39
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    • 2005
  • Phosphor powders of zinc gal late added with Mg and rare-earth elements were prepared by sol id state reaction to improve luminescent properties. Green emitting $ZnMnGa_{2}O_{4}$ reached maximum intensity at Mn=0,005 mole$\%$ and further improvement was achieved by addition of $Mg^{2+}$. Tm, Mg-added zinc gallate phosphor exhibited a strong blue band emission, peaking at about 420 nm with the maximum intensity at the concentration of 0.003 mole$\%$ Mg and 0.015 mole$\%$ Tm. Deepening of the potential wells of the ground and excited states was suggested to be the cause for the enhancement in emission intensity at optimal doping of Mg and Tm.

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Luminescence property of Eu2+ in SiO2-Al2O3 glass phosphor

  • Chae, Ki Woong;Lee, Kyoung-Ho;Cheon, Chae Il;Cho, Nam In;Kim, Jeong Seog
    • Journal of Ceramic Processing Research
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    • 제13권spc2호
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    • pp.189-192
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    • 2012
  • Manufacturing process for silicate glass phosphors containing Eu2+ activator and their photoluminescence property have been studied. We adopted powder sintering process instead of traditional glass melting process for making glass phosphor. At first, phosphor powders were synthesized at 1200 ℃ for 2-3 hours under a reducing atmosphere with 10% H2-90% N2 gas mixture. The reduced powders were compacted into discs and then the discs weresintered at 1400 ~ 1500 ℃ for 1 hr under a reducing atmosphere of 5H2-95% N2. The enhancement of PL intensity by Al2O3 addition, XPS binding energy shift of Si 2p and O 1s, sintering shrinkage, and crystallization were characterized.

The effect of thermal anneal on luminescence and photovoltaic characteristics of B doped silicon-rich silicon-nitride thin films on n-type Si substrate

  • Seo, Se-Young;Kim, In-Yong;Hong, Seung-Hui;Kim, Kyung-Joong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.141-141
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    • 2010
  • The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

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Synthesis and Characterization of Upconversion Nanoparticles for Cancer Therapy

  • 최승유;김보배;김은비;이승우;전선아;박태정
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.420.2-420.2
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    • 2016
  • Various fields have been paid attention to upconversion nanoparticles (UCNPs) because of its unique optical properties. Moreover, to use the UC luminescent techniques through cell images for identified apoptosis/necrosis of cancer cells have been performed. They have been studied for a versatile biomedical application such as a biosensing tool, or delivery of active forms of medicines inside living cells. UCNPs have distinctive characteristics such as photoluminescence, special emission, low background fluorescence signal and good colloidal stability, which have many advantages compared with the organic dyes and quantum dots. UCNPs have not only a great potential for imaging (UC luminescence) but also therapies (photo-thermal therapy, PTT and photo-dynamic therapy, PDT) in cancer diagnostics. Therefore, we report the enhancement of upconversion red emission in NaYF4:Yb3+,Er3+ nanoparticles, synthesized via solid-state method with the thermal decomposition of trifluoroacetate as precursors and organic solvent at a high boiling point. The UCNPs have an emission in the field of near infrared wavelength, cubic shape and nano-size in length. In this study, we will further investigate it for cancer therapy with NIR optical detection onto the solid substrate.

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경사증착법을 이용한 PM-OLED용 무기박막형 보호층 연구 (Study on the MgO Passivated PM-OLED using the Tilt & Rotate Technique)

  • 김광호;김훈;김재경;도이미;한정인;주병권
    • 한국전기전자재료학회논문지
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    • 제16권9호
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    • pp.812-815
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    • 2003
  • In this study, the MgO thin-film passivation layer was adopted to protect passive matrix organic light emitting diode(PMOLED) with the cathode separator from moisture and oxygen. Using the substrate rotate and tilt technique during the deposition, the organic and cathode layers were perfectly covered with MgO. And then, we analyzed the difference of the current-voltage and luminescence characteristics between passivated OLED of the MgO and non-passivated OLED. It was found that the number of dark spot generated from the degradated pixel was decreased owing to the Mgo thin-film passivation layer using the tilt & rotate technique. And the half-life time passivated OLED was improved two times more. Thus, the MgO could be vaccum-deposited under the low temperature and had a merit that the organic layer was not much affected. We can consider that MgO thin film passivation method can be adopted to protect the OLED from moisture and oxygen and can offer the enhancement of lifetime.