• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.185-189
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• 2002

Flexible displays such as plastic based LCDs and organic light-emitting diodes for mobile communication devices have been researched and developed at KETI in KOREA since 1997. The Plastic film substrate has so poor thermal tolerance and non-rigidness that the fabrication of active devices and panel assembly have to perform at low temperature and pressure. In addition, high thermal expansion of the substrate is also a serious problem for reliable metallic film deposition. In this paper, we investigated particularly on the fundamental characteristics of various plastic substrates and then, suggested novel methods that improve the fabrication processes of plastic LCD panel. In order to maintain stable substrate surface and uniform cell gap during panel assembly, we utilized newly-invented iii and vacuum chuck. Electro-optical characteristics of fabricated plastic LCD are better than or equivalent to those of typical glass based LCDs though it is thinner, lighter-weight and more robust.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.64.1-64.1
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• 2012

Next generation displays such as high performance LCD, AMOLED, flexible display and transparent display require specific TFT back-planes. For high performance TFT back-planes, low temperature poly silicon (LTPS), and metal-oxide semiconductors are studied. Flexible TFT backplanes require low temperature processible organic semiconductors. Not only development of active semiconducting materials but also design and synthesis of semiconductor corresponding gate dielectric materials are important issues in those display back-planes. In this study, we investigate the high heat resistant polymeric gate dielectric materials for organic TFT and inorganic TFT with good insulating properties and processing chemical resistance. We also controlled and optimized surface energy and morphology of gate dielectric layers for direct printing process with solution processible organic and inorganic semiconductors.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.3
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• pp.1-10
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• 1998

A new oscillator configuration is presented and tested for Josephson voltage standard operated at the cryogenic(4.2K) temperature. Features of active devices are investigated in aspects of 1/f noise, output power, and current collapse at low temperature. The output power of oscillator is optimized by a nonlinear design approach called Harmonic Two Signal Method(HTSM). The embedding newworks of the generalized six oscillators with tow loads are derived. A HEMT oscilliator is designed in X-Band for the Josephson voltage standard and tested at room and cryogenic(4.2K) temperatures. Oscillation frequency, output power, C/N ratio, and fequency stability are compared at room and low temperatures.

• Proceedings of the Korean Society of Applied Pharmacology
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• 1996.04a
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• pp.119-130
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• 1996

We review the factors which regulate the depth and composition of the human airway surface liquid (ASL). These include secretion from airway submucosal glands, ion and fluid transport across the surface epithelium, goblet cell discharge, surface tension and transepithelial gradients in osmotic and hydrostatic pressure. We describe recent experiments in which we have used low temperature scanning electron microscopy of rapidly frozen specimens to detect changes in depth of ASL in response to submucosal gland stimulation. We also present preliminary data in which X-ray microanalysis of frozen specimens has been used to determine the elemental composition of ASL.

• Ocean and Polar Research
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• v.32 no.2
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• pp.157-164
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• 2010

A marine alga, Spirulina maxima, was extracted under high pressure and low temperature conditions at 500 MPa and $60^{\circ}C$ for 5 and 10 min. A high pressure of 500 MPa was applied to improve process yields because of low temperature extraction. This method resulted in highest higher extraction yield of 26.1% (w/w) in comparison to those results obtained from conventional extraction methods which produced a yield of 17.6% (w/w) from water. The extracts from this process also showed 19% of low cytotoxicity against human normal fibroblast cells in adding 1.0 mg/ml of the highest concentration. The crude extract significantly reduced the production of Prostaglandin $E_2$ ($PGE_2$) from CCD-986sk cells and increased nitric oxide production by macrophages. These higher activities of enhancing skin immune functions were found to have high antioxidant extract properties, like a 98% increase in DPPH radical scavenging activity. The extracts from the high pressure process showed a higher elution of active components than other processes and generated new compounds based on HPLC analysis. This clearly indicates that the extracts from high pressure and low temperature conditions have higher skin immune activation properties that have not been previously reported.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.595-596
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• 2006

The flexible organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and low-temperature processes. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing which is high-resolution lithography technology using polydimethylsiloxane(PDMS) stamp. The OTFT array with dielectric layer and organic active semiconductor layers formed at room temperature or at a temperature tower than $40^{\circ}C$. The microcontact printing process using SAM(self-assembled monolayer) and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even nano size, and reduced the procedure by 10 steps compared with photolithography. Since the process was done in low temperature, there was no pattern transformation and bending problem appeared. It was possible to increase close packing of molecules by SAM, to improve electric field mobility, to decrease contact resistance, and to reduce threshold voltage by using a big dielecric.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.205-207
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• 2008

The new process for hybrid silicon thin film transistor (TFT) using DPSS laser has been developed for realizing both low-temperature poly-Si (LTPS) TFT and a-Si:H TFT on the same substrate as a backplane of active matrix liquid crystal display. LTPS TFTs are integrated on the peripheral area of the panel for gate driver integrated circuit and a-Si:H TFTs are used as a switching device for pixel in the active area. The technology has been developed based on the current a-Si:H TFT fabrication process without introducing ion-doping and activation process and the field effect mobility of $4{\sim}5\;cm^2/V{\cdot}s$ and $0.5\;cm^2/V{\cdot}s$ for each TFT was obtained. The low power consumption, high reliability, and low photosensitivity are realized compared with amorphous silicon gate driver circuit and are demonstrated on the 14.1 inch WXGA+ ($1440{\times}900$) LCD Panel.

• Smart Structures and Systems
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• v.6 no.5_6
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• pp.675-687
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• 2010

Structural Health Monitoring (SHM) is the science and technology of monitoring and assessing the condition of aerospace, civil and mechanical infrastructures using a sensing system integrated into the structure. Impedance-based SHM measures impedance of a structure using a PZT (Lead Zirconate Titanate) patch. This paper presents a low-power wireless autonomous and active SHM node called Autonomous SHM Sensor 2 (ASN-2), which is based on the impedance method. In this study, we incorporated three methods to save power. First, entire data processing is performed on-board, which minimizes radio transmission time. Considering that the radio of a wireless sensor node consumes the highest power among all modules, reduction of the transmission time saves substantial power. Second, a rectangular pulse train is used to excite a PZT patch instead of a sinusoidal wave. This eliminates a digital-to-analog converter and reduces the memory space. Third, ASN-2 senses the phase of the response signal instead of the magnitude. Sensing the phase of the signal eliminates an analog-to-digital converter and Fast Fourier Transform operation, which not only saves power, but also enables us to use a low-end low-power processor. Our SHM sensor node ASN-2 is implemented using a TI MSP430 microcontroller evaluation board. A cluster of ASN-2 nodes forms a wireless network. Each node wakes up at a predetermined interval, such as once in four hours, performs an SHM operation, reports the result to the central node wirelessly, and returns to sleep. The power consumption of our ASN-2 is 0.15 mW during the inactive mode and 18 mW during the active mode. Each SHM operation takes about 13 seconds to consume 236 mJ. When our ASN-2 operates once in every four hours, it is estimated to run for about 2.5 years with two AAA-size batteries ignoring the internal battery leakage.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.207-207
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• 2012

Si quantum dot (QD) imbedded in a $SiO_2$ matrix is a promising material for the next generation optoelectronic devices, such as solar cells and light emission diodes (LEDs). However, low conductivity of the Si quantum dot layer is a great hindrance for the performance of the Si QD-based optoelectronic devices. The effective doping of the Si QDs by semiconducting elements is one of the most important factors for the improvement of conductivity. High dielectric constant of the matrix material $SiO_2$ is an additional source of the low conductivity. Active doping of B was observed in nanometer silicon layers confined in $SiO_2$ layers by secondary ion mass spectrometry (SIMS) depth profiling analysis and confirmed by Hall effect measurements. The uniformly distributed boron atoms in the B-doped silicon layers of $[SiO_2(8nm)/B-doped\;Si(10nm)]_5$ films turned out to be segregated into the $Si/SiO_2$ interfaces and the Si bulk, forming a distinct bimodal distribution by annealing at high temperature. B atoms in the Si layers were found to preferentially substitute inactive three-fold Si atoms in the grain boundaries and then substitute the four-fold Si atoms to achieve electrically active doping. As a result, active doping of B is initiated at high doping concentrations above $1.1{\times}10^{20}atoms/cm^3$ and high active doping of $3{\times}10^{20}atoms/cm^3$ could be achieved. The active doping in ultra-thin Si layers were implemented to silicon quantum dots (QDs) to realize a Si QD solar cell. A high energy conversion efficiency of 13.4% was realized from a p-type Si QD solar cell with B concentration of $4{\times}1^{20}atoms/cm^3$. We will present the diffusion behaviors of the various dopants in silicon nanostructures and the performance of the Si quantum dot solar cell with the optimized structures.

• Journal of the Korean institute of surface engineering
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• v.32 no.6
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• pp.703-708
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• 1999

Silicides have been used extensively in ULSI logic device fabrication as contact materials for the active areas as well as the poly- Si gates. NiSi is a promising candidate for submicron device application due to less volume expansion, low formation temperature, little silicon consumption, and large stable processing temperature window. In this report, the microstructure of nickel silicides fabricated with a thermal evaporator has been investigated. We observed systematic transformation of Ni silicides of $Ni_2$Si, NiSi, $NiSi_2$, as annealing temperature increases. All the silicides have been identified by a X-ray diffractometer (XRD). The cross-sectional microstructure of silicides was examined by a transmission electron microscope (TEM) equipped with a energy dispersive spectrometer(EDS). The surface roughness of silicides was measured by scanning probe microscope(SPM). Although we observed thin oxide layer existed at the $Ni/NiSi_{x}$ interface, we fabricated successfully $550\AA$-thick planar Ni-monosilicide at the temperature range of$ 400~700^{\circ}C$.