• KSBB Journal
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• v.22 no.6
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• pp.433-437
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• 2007

A constant desire has been to fabricate nanopatterns for biochip and the Ultraviolet-nano imprint lithography (UV-NIL) is promising technology especially compared with thermal type in view of cost effectiveness. By using this method, nano-scale to micro-scale structures also called nanopore structures can be fabricated on large scale gold plate at normal conditions such as room temperature or low pressure which is not possible in thermal type lithography. One of the most important methods in fabricating biochips, immobilizing, was processed successfully by using this technology. That means immobilizing proteins only on the nanopore structures based on gold, not on hardened resin by UV is now possible by utilizing this method. So this selective nano-patterning process of protein can be useful method fabricating nanoscale protein chip.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.245-245
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• 2007

본 연구는 $Bi_2O_3$, ZnO 및 $Nb_2O_5$로 이루어진 두 가지의 $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$와 $(Bi_{1.5}Zn_{0.5})(Zn_{0.5}Nb_{1.5})O_7$ pyrochlore를 제조한 후, ZBS 및 BZBS 유리를 각각 첨가하여 저온 소결 및 마이크로파 유전 특성을 고찰하였다. 두 가지의 pyrochlore에 대하여 하소 온도에 따른 상 합성 유무를 고찰한 결과 $900^{\circ}C$에서 단일 상을 갖는 pyrochlore를 제조할 수 있었다. 두 가지의 pyrochlore에 ZnO-rich ZBS 유리와 $Bi_2O_3$-rich BZBS 유리를 3, 5 wt%로 첨가한 후 $800{\sim}950^{\circ}C$에서 소결한 결과 ZBS 및 BZBS 유리를 5wt%를 첨가하였을 때 $900^{\circ}C$에서 소결이 가능하였다. 또한 마이크로파 유전 특성을 고찰한 결과, $(Bi_{1.5}Zn_{0.5})(Zn_{0.5}Nb_{1.5})O_7$의 pyrochlore는 고주파에서 유전 특성 측정이 되지 않았다. $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$의 pyrochlore의 경우 5 wt% ZBS 및 BZBS 유리를 첨가하여 $900^{\circ}C$에서 소결한 시편의 마이크로파 유전 특성은 ${\varepsilon}_r$= 62.8~68.3, $Q{\times}f$ value= 3,500~2,700 GHz을 나타내었다.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1315-1317
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• 2005

Generally, the high Tc superconductor(HTS) doesn't generate any loss in DC condition, but generate considerable loss in AC condition. Until now AC loss in superconductor has been researched on measuring method of short sample by using electrical method and magnetization method. But it is not easy to estimate AC loss in high class magnet system with results of measuring AC Joss in short sample. In this paper, we carry out research on measuring method by using calorimetric method used in measuring AC loss in high class magnet system. We make the inductive and non-inductive superconducting magnet and measure the generated AC loss, then we compare the measured results with the calculated results using Norris equation. This measuring method of AC loss using calorimetric method can measure not only AC loss in superconducting magnet but losses in conducting, radiant and low temperature. Consequently it is thought that efficient design and fabrication of superconducting magnet system will be possible by means of AC loss measurement method using calorimetric method.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.75.2-75.2
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• 2013

Atomic layer deposition (ALD), utilizing self-limiting surface reactions, could offer promising perspectives for future efficient energy conversion devices. The capabilities of ALD for surface/interface modification and construction of novel architectures with sub-nanometer precision and exceptional conformality over high aspect ratio make it more valuable than any other deposition methods in nanoscale science and technology. In the context, a variety of researches on fabrication of active materials for energy conversion applications by ALD are emerging. Among those materials, one-dimensional nanotubular titanium dioxide, providing not only high specific surface area but also efficient carrier transport pathway, is a class of the most intensively explored materials for energy conversion systems, such as photovoltaic cells and photo/electrochemical devices. The monodisperse, stoichiometric, anatase, TiO2 nanotubes with smooth surface morphology and controlled wall thickness were fabricated via low-temperature template-directed ALD followed by subsequent annealing. The ALD-grown, anatase, TiO2 nanotubes in alumina template show unusual crystal growth behavior which allows to form remarkably large grains along axial direction over certain wall thickness. We also fabricated dye-sensitized solar cells (DSCs) introducing our anatase TiO2 nanotubes as photoanodes, and studied the effect of blocking layer, TiO2 thin films formed by ALD, on overall device efficiency. The photon convertsion efficiency ~7% were measured for our TiO2 nanotubebased DSCs with blocking layers, which is ~1% higher than ones without blocking layer. We also performed open circuit voltage decay measurement to estimate recombination rate in our cells, which is 3 times longer than conventional nanoparticulate photoanodes. The high efficiency of our ALD-grown, anatase, TiO2 nanotube-based DSCs may be attributed to both enhanced charge transport property of our TiO2 nanotubes photoanode and the suppression of recombination at the interface between transparent conducting electrode and iodine electrolytes by blocking layer.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.137-145
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• 2001

A new process, gelcasting in aqueous medium, to fabricate complex-shaped ceramic core has investigated. The ceramic slurry, mixture of fused silica powder and additives such as zircon and cordierite, was electrosterically stabilizes. The slip was prepared by ball milling of polydispered ceramic suspension with monomer, dimer and dispersant. The rheological behavior of slip was evaluated by viscosity measurement. It was found that the high solid loading of polydispersed ceramic slip, which has low viscosity of 50vol%, is possible to obtained. The viscosity of the slip was significantly dependent upon the amount of polymer dispersant and the formulation of monomer and dimer. The green bodies were fabricated through casting and gelation at room temperature followed by drying at $25^{\circ}C$ for 48hrs under relative humidity of 80~85%. Crack-free green body was successfully fabricated through the above process.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.9
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• pp.1615-1622
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• 2008

We have fabricated the poly-silicon thin film transistor(TFT) which has the LDD-region with graded spacer. The devices of n-channel poly-si TFT's hydrogenated by $H_2$ and $H_2$/plasma processes were fabricated for the devices reliability. We have biased the devices under the gate voltage stress conditions of maximum leakage current. The parametric characteristics caused by gate voltage stress conditions in hydrogenated devices are investigated by measuring/analyzing the drain current, leakage current, threshold voltage($V_{th}$), sub-threshold slope(S) and transconductance($G_m$) values. As a analyzed results of characteristics parameters, the degradation characteristics in hydrogenated n-channel polysilicon TFT's are mainly caused by the enhancement of dangling bonds at the poly-Si/$SiO_2$ interface and the poly-Si grain boundary due to dissolution of Si-H bonds. The structure of novel proposed poly-Si TFT's are the simplicities of the fabrication process steps and the decrease of leakage current by reduced lateral electric field near the drain region.

• Composites Research
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• v.20 no.3
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• pp.37-42
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• 2007

Tensile residual stress is occurred by difference of coefficients of thermal expansion between fiber and matrix is one of the serious problems in metal matrix composite(MMC). TiNi alloy fiber was used to solve the problem of the tensile residual stress as the reinforced material. TiNi alloy fiber improves the tensile strength of composite with occurring of compressive residual stress in the matrix by its shape memory effect. A hot press method was used to create the optimal fabrication condition for a Shape Memory Alloy(SMA) composite. The bonding effect of the matrix and the reinforcement within the SMA composite by the hot press method was strengthened by cold rolling. In addition, acoustic emission technique was used to quantify the microscopic damage behavior of cold rolled TiNi/A16061 shape memory alloy composite at low temperature. The damage degree for the specimen that underwent thermal shock cycles was also discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.175-181
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• 2024

In electrical power substations, bulky iron-core potential transformers (PTs) are installed in a tank of gas-insulated switchgear (GIS) to measure system voltages. This paper proposed a low-power voltage transformer (LPVT) that can replace the conventional iron-core PTs in response to the demand for the digitalization of substations. The prototype LPVT consists of a capacitive voltage divider (CVD) which is embedded in a spacer and an impedance matching circuit using passive components. The CVD was fabricated with a flexible PCB to acquire enough insulation performance and withstand vibration and shock during operation. The performance of the LPVT was evaluated at 80%, 100%, and 120% of the rated voltage (38.1 kV) according to IEC 61869-11. An accuracy correction algorithm based on LabVIEW was applied to correct the voltage ratio and phase error. The corrected voltage ratio and phase error were +0.134% and +0.079 min., respectively, which satisfies the accuracy CL 0.2. In addition, the voltage ratio of LPVT was analyzed in ranges of -40~+40℃, and a temperature correction coefficient was applied to maintain the accuracy CL 0.2. By applying the LPVT proposed in this paper to the same rating GIS, it can be reduced the length per GIS bay by 11%, and the amount of SF6 by 5~7%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.2
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• pp.108-113
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• 2013

Chalcopyrite material $CuInSe_2$ (CIS) is known to be a very prominent absorber layer for high efficiency thin film solar cells. Current interest in the photovoltaic industry is to identify and develop more suitable materials and processes for the fabrication of efficient and cost-effective solar cells. Various processes have been being tried for making a low cost CIS absorber layer, this study obtained the CIS nanoparticles using commercial powder of 6 mm pieces for low cost CIS absorber layer by high frequency ball milling and cryogenic milling. And the CIS absorber layer was prepared by paste coating using milled-CIS nanoparticles in glove box under inert atmosphere. The chalcopyrite $CuInSe_2$ thin films were successfully made after selenization at the substrate temperature of $550^{\circ}C$ in 30 min, CIS solar cell of Al/ZnO/CdS/CIS/Mo structure prepared under various deposition process such as evaporation, sputtering and chemical vapor deposition respectively. Finally, we achieved CIS nanoparticles solar cell of electric efficient 1.74 % of Voc 29 mV, Jsc 35 $mA/cm^2$ FF 17.2 %. The CIS nanoparticles-based absorber layers were characterized by using EDS, XRD and HRSEM.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.180-180
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• 2012

Heteroepitaxial GaN nano- and micro-rods (NMRs) are one of the most promising structures for high performance optoelectronic devices such as light emitting diodes, lasers, solar cells integrated with Si-based electric circuits due to their low dislocation density and high surface to volume ratio. However, heteroepitaxial GaN NMRs growth using a metal-organic vapor phase epitaxy (MOVPE) machine is not easy due to their long surface diffusion length at high growth temperature of MOVPE above $1000^{\circ}C$. Recently some research groups reported the fabrication of the heteroepitaxial GaN NMRs by using MOVPE with vapor-liquid-solid (VLS) technique assisted by metal catalyst. However, in the case of the VLS technique, metal catalysts may act as impurities, and the GaN NMRs produced in this mathod have poor directionallity. We have successfully grown the vertically well aligned GaN NMRs on Si (111) substrate by means of self-catalystic growth methods with pulsed-flow injection of precursors. To grow the GaN NMRs with high aspect ratio, we veried the growth conditions such as the growth temperature, reactor pressure, and V/III molar ratio. We confirmed that the surface morphology of GaN was strongly influenced by the surface diffusion of Ga and N adatoms related to the surrounding environment during growth, and we carried out theoretical studies about the relation between the reactor pressure and the growth rate of GaN NMRs. From these results, we successfully explained the growth mechanism of catalyst-free and mask-free heteroepitaxial GaN NMRs on Si (111) substrates. Detailed experimental results will be discussed.