• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2004년도 춘계학술대회
• /
• pp.204-209
• /
• 2004

SiC materials have been extensively studied for high temperature components in advanced energy system and advanced gas turbine. However, the brittle characteristics of SiC such as low fracture toughness and low strain-to fracture still impose a severe limitation on practical applications of SiC materials. For these reasons, $SiC_f/SiC$ composites can be considered as a promising for various structural materials, because of their good fracture toughness compared with monolithic SiC ceramics. But, high temperature and pressure lead to the degradation of the reinforcing fiber during the hot pressing. Therefore, reduction of sintering temperature and pressure is key requirements for the fabrication of $SiC_f/SiC$ composites by hot pressing method. In the present work, Monolithic LPS-SiC was fabricated by hot pressing method in Ar atmosphere at 1760 $^{\circ}C$, 1780 $^{\circ}C$, 1800 $^{\circ}C$ and 1820 $^{\circ}C$ under 20 MPa using $Al_2O_3-Y_2O_3$ system as sintering additives in order to low sintering temperature. The starting powder was high purity ${\beta}-SiC$ nano-powder with an average particle size of 30 nm. Monolithic LPS-SiC was evaluated in terms of sintering density, micro-structure, flexural strength, elastic modulus and so on. Sintered density, flexural strength and elastic modulus of fabricated LPS-SiC increased with increasing the sintering temperature. In the micro-structure of this specimen, it was found that grain of sintered body was grown from 30 nm to 200 nm.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.44-44
• /
• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO channel layers(ZnO TFTs) having different channel thicknesses. The ZnO film were deposited as active channel layers on $Si_3N_4/Ti/SiO_2p$-Si substrates by rf magnetron sputtering at $100\;^{\circ}C$ without additional annealing. Also the Zno thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film were deposited as gate insulator by PE-CVD at $15\;^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method.

• The Korean Journal of Ceramics
• /
• 제5권1호
• /
• pp.87-90
• /
• 1999

It was suggested that tape casting method can be used to fabricate high-temperature electrostatic chucks(HTESC) based on a metal substrate coated with a glass-ceramic insulating layer. The adhesion of the coating was excellent such that it was able to withstand temperature cycling to over $300^{\circ}C$ without spalling. The electrostatic clamping pressure reached a very high value of about 9 torr at 600V and generally followed the theoretical voltage-squared curve. Based on these results, we believe that we successfully developed a viable technique for manufacturing low cost HTESC.

• Current Photovoltaic Research
• /
• 제2권3호
• /
• pp.110-114
• /
• 2014

We propose a low temperature sol-gel ZnO/Ag nanowire composite thin film to fulfill low temperature and low cost requirements, which are essential criteria in future flexible electronic devices. In this proposed thin film, Ag nanowire plays the role of electrical conduction, and sol-gel ZnO provides a structural medium with a high visible transmittance. Low temperature restriction in the sol-gel fabrication process prevents sufficient oxidation of Zn acetate precursors, which were solved by a post-coating treatment with ultraviolet light irradiation. Composite thin film formation was performed by spin coating methods with a mixed precursor solution or in a sequential manner. We obtained an average visible transmittance larger than 85% and a sheet resistance smaller than $50{\Omega}/sq$. After optimization in a fabricated composite transparent conductive thin film with the thickness around 100 nm. Similar experimental demonstration in a flexible substrate (polyethyleneterephthalate) was successful, which implies a promising application opportunity of this technology.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1993년도 제4회 학술발표회 논문개요집
• /
• pp.6-6
• /
• 1993

With brief instroduction of fabrication methods of dia.ond fillls by plasma CVD, recent progress in diamond research mainly done in the author's laboratory at Osaka University is reviewed.especially on the following topics: "low temperature diallond fabrication", "ion implantation", "hydrogen plasma treatment of ion-implanted diaaond to remove ion-induced damage", "Oxygen diffusion into the bulk assisted by the hydrogen treatllent", and "hole-burning effect".ffect".

• 한국분말재료학회지
• /
• 제8권3호
• /
• pp.207-209
• /
• 2001

Nano particles have recently been a major research interest, motivated by their unusual physical and chemical properties. Such particles can be synthesized using physical and chemical methods. The physical methods need expensive installation like vacuum induction furnace, whereas in chemical methods the process in generally very simple and low cost. In this study, simple and new fabrication process by using ultrasound was investigated to prepare the nano-sized metal particles on various powders at room temperature.

• 접착 및 계면
• /
• 제25권2호
• /
• pp.43-49
• /
• 2024

최근 유연 유기 시냅스 트랜지스터(flexible organic synaptic transistor, FOST)는 유기 반도체를 채널층으로 하여 유연성, 생체 적합성, 손쉬운 공정성, 복잡성 감소로 인해 주목받고 있다. 또한 기존의 무기 시냅스 소자에 비해 간단한 구조와 낮은 제조 비용으로 인간 뇌의 가소성을 모방할 수 있으므로 차세대 웨어러블 장치 및 소프트 로보틱스 기술에 적용이 가능하다. 유연 유기 시냅스 트랜지스터에서 유기 기판은 소자의 준비 온도에 민감하고 고온 처리 공정은 유기 기판의 열변형을 일으켜 고성능 소자를 제조하기 위해서는 저온용액 기반의 공정 기술이 필요하다. 본 총설에서는 저온 용액 기반 유연 유기 시냅스 트랜지스터 소자의 최신 공정 기술 연구 상황을 요약하고, 이에 따른 문제점과 해결해야 할 과제를 제시하고자 한다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.481.1-481.1
• /
• 2014

Dye-sensitized solar cell (DSSC) has been extensively investigated as the next generation energy source. Despite attractive features of simple fabrication process and its economical efficiency, there are some problems such as low efficiency and low long-term stability. Many groups have attempted the proposed way to improve the cell efficiency and long-term stability such as low recombination rate between $TiO_2$ surface and electrolyte, the development of new dye molecules capable of light adsorption as broadly as possible, the fabrication of a solid-state DSSC by replacing the liquid electrolyte, and protective coating on glass. In this work, we confirmed new dye-coating conditions to maximize the dye adsorption between the dye and $TiO_2$ nanoparticle surface. The experiment results coating conditions with the coating temperature of $70^{\circ}C$, the dye concentration of 10 mM and the coating time of 3 min. Conditions have two times, three times cycle the experiment in progress efficiency rises.

• 한국전기전자재료학회논문지
• /
• 제22권10호
• /
• pp.821-825
• /
• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
• /
• pp.415-417
• /
• 2009

A low temperature decal (LTD) transfer method is tried to fabricated hydrocarbon (HC) membrane based MEA. Sandwiched structures of outer ionomer/catalyst/carbon coating/substrate, which had been developed for Nafion membrane, are used for transfer of catalyst to the HC membrane. Performances of the HC MEA before and after 500hr continuous operation are compared and it is found that a severe delamination occurs at the interface between the HC membrane and the catalyst layer, which is the main reason of the low performance and its degradation. The delamination is due probably to the different nature of HC membrane to the Nafion ionomer. A substitutional method, therefore, is suggested to overcome this. In such a way, the outer ionomer process is removed and the low transfer rate of catalyst by skipping the ionomer process is compensated with optimization of other process variables such as transfer time or temperature. The resulting performance is superior to the original LTD method, which can be explained in terms of low resistive components both in ohmic and kinetic.