• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.12 no.3
• /
• pp.71-74
• /
• 2012

We have manufactured a close range Dicke type radiometer which consists of two stage low noise amplifier and diode detector. Frequency range of this system is 35 GHz. And this is used for studying temperature calibration on specific objects. We have present millimeter-wave radiometer's thermal calibration method and its characteristics. From absolute temperature 299K to 309K, in proportion to increase temperature, output voltages are linearly increased. In this case, undefined objects can be measured thermal noise temperature relatively. Overall from absolute temperature 214K to 309K, we have obtained relation of temperature and output voltage;V= 0.03601K - 10.70517.

• Electrical & Electronic Materials
• /
• v.11 no.11
• /
• pp.22-27
• /
• 1998

We have investigated the effect of an ion shower doping of the laser annealed poly-Si films at an elevated substrate temperatures. The substrate temperature was varied from room temperature to 300$^{\circ}C$ when the poly-Si film was doped with phosphorus by a non-mass-separated ion shower. Optical, structural, and electrical characterizations have been performed in order to study the effect of the ion showering doping. The sheet resistance of the doped poly-Si films was decreased from7${\times}$106 $\Omega$/$\square$ to 700 $\Omega$/$\square$ when the substrate temperature was increased from room temperature to 300$^{\circ}C$. This low sheet resistance is due to the fact that the doped film doesn't become amorphous but remains in the polycrystalline phase. The mildly elevated substrate temperature appears to reduce ion damages incurred in poly-Si films during ion-shower doping. Using the ion-shower doping at 250$^{\circ}C$, the field effect mobility of 120 $\textrm{cm}^2$/(v$.$s) has been obtained for the n-channel poly-Si TFTs.

• Journal of the Korean Ceramic Society
• /
• v.47 no.1
• /
• pp.82-85
• /
• 2010

Recently, thin film processes for oxides and metal deposition, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), have been widely adapted to fabricate solid oxide fuel cells (SOFCs). In this paper, we presented two research area of the use of such techniques. Gadolinium doped ceria (GDC) showed high ionic conductivity and could guarantee operation at low temperature. But the electron conductivity at low oxygen partial pressure and the weak mechanical property have been significant problems. To solve these issues, we coated GDC electrolyte with a nano scale yittria-doped stabilized zirconium (YSZ) layer via atomic layer deposition (ALD). We expected that the thin YSZ layer could have functions of electron blocking and preventing ceria from the reduction atmosphere. Yittria-doped barium zirconium (BYZ) has several orders higher proton conductivity than oxide ion conductor as YSZ and also has relatively high chemical stability. The fabrication processes of BYZ is very sophisticated, especially the synthesis of thin-film BYZ. We discussed the detailed fabrication processes of BYZ as well as the deposition of electrode. This paper discusses possible cell structure and process flow to accommodate such films.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.14 no.6
• /
• pp.149-157
• /
• 2014

This paper is based on the fabrication of wireless control system for the building shading device. RF Module was controlled by UHF wireless CC1020 chip which has low electrical power and low electrical voltage. Also 447.8625~447.9875 frequency, 4800Baud data rate and 12.5 kHz channel spacing was controlled by the use of SPDT switch and with Microcontroller program. Furthermore, the helical antenna was used. The starting production of 447.8625~447.9875 kHz wireless electrical power was used. As the result, it did not exceed 10dBm which is the standard of low power wireless system. Shading efficiency was measured at 25%, 50%, 75% direction with controlling the interior temperature and the intensity of illumination at the rate of 1 hour. As the result, the intensity of illumination was lowered to 82~87% at 25% direction with $0.6{\sim}1.4^{\circ}C$ lowered temperature. At 50% direction, the intensity of illumination was lowered to 60~68% with $2.3{\sim}4.1^{\circ}C$ lowered temperature. And at 75% direction, the intensity of illumination was lowered to 41~47% with $3.4{\sim}5.1^{\circ}C$ lowered temperature.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.348-348
• /
• 2011

Carbon nanotube (CNT) field effect transistors and sensors use CNT as a current channel, of which the resistance varies with the gate voltage or upon molecule adsorption. Since the performance of CNT devices depends very much on the CNT/metal contact resistance, the CNT/electrode contact must be stable and the contact resistance must be small. Depending on the geometry of CNT/electrode contact, it can be categorized into the end-contact, embedded-contact (top-contact), and side-contact (bottom-contact). Because of difficulties in the sample preparation, the end-contact CNT device is seldom practiced. The embedded-contact in which CNT is embedded inside the electrode is desirable due to its rigidness and the low contact resistance. Fabrication of this structure is complicated, however, because each CNT has to be located under a high-resolution microscope and then the electrode is patterned by electron beam lithography. The side-contact is done by depositing CNT electrophoretically or by precipitating on the patterned electrode. Although this contact is fragile and the contact resistance is relatively high, the side-contact by far has been widely practiced because of its simple fabrication process. Here we introduce a simple method to embed CNT inside the electrode while taking advantage of the bottom-contact process. The idea is to utilize a eutectic material as an electrode, which melts at low temperature so that CNT is not damaged while annealing to melt the electrode to embed CNT. The lowering of CNT/Au contact resistance upon annealing at mild temperature has been reported, but the electrode in these studies did not melt and CNT laid on the surface of electrode even after annealing. In our experiment, we used a eutectic Au/Al film that melts at 250$^{\circ}C$. After depositing CNT on the electrode made of an Au/Al thin film, we annealed the sample at 250$^{\circ}C$ in air to induce eutectic melting. As a result, Au-Al alloy grains formed, under which the CNT was embedded to produce a rigid and low resistance contact. The embedded CNT contact was as strong as to tolerate the ultrasonic agitation for 90 s and the current-voltage measurement indicated that the contact resistance was lowered by a factor of 4. By performing standard fabrication process on this CNT-deposited substrate to add another pair of electrodes bridged by CNT in perpendicular direction, we could fabricate a CNT cross junction. Finally, we could conclude that the eutectic alloy electrode is valid for CNT sensors by examine the detection of Au ion which is spontaneously reduced to CNT surface. The device sustatined strong washing process and maintained its detection ability.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.5 no.3
• /
• pp.149-158
• /
• 2005

This paper describes design, fabrication, and application of the silicon based temperature controllable micro reactor. In order to achieve fast temperature variation and low energy consumption, reaction chamber of the micro reactor was thermally isolated by etching the highly conductive silicon around the reaction chamber. Compared with the model not having thermally isolated structure, the thermally isolated micro reactor showed enhanced thermal performances such as fast temperature variation and low energy consumption. The performance enhancements of the micro reactor due to etched holes were verified by thermal experiment and numerical analysis. Regarding to 42 percents reduction of the thermal mass achieved by the etched holes, approximately 4 times faster thermal variation and 5 times smaller energy consumption were acquired. The total size of the fabricated micro reactor was $37{\times}30{\times}1mm^{3}$. Microchannel and reaction chamber were formed on the silicon substrate. The openings of channel and chamber were covered by the glass substrate. The Pt electrodes for heater and sensor are fabricated on the backside of silicon substrate below the reaction chamber. The dimension of channel cross section was $200{\times}100{\mu}m^{2}$. The volume of reaction chamber was $4{\mu}l$. The temperature of the micro reactor was controlled and measured simultaneously with NI DAQ PCI-MIO-16E-l board and LabVIEW program. Finally, the fabricated micro reactor and the temperature control system were applied to the thermal denaturation and the trypsin digestion of protein. BSA(bovine serum albumin) was chosen for the test sample. It was successfully shown that BSA was successfully denatured at $75^{\circ}C$ for 1 min and digested by trypsin at $37^{\circ}C$ for 10 min.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2000.11a
• /
• pp.61-64
• /
• 2000

We fabricated and characterized Low Noise Amplifier (LNA) using MCM-C (Multi-Chip-Module-Cofired) technology for 2.14 GHz IMT-2000 mobile terminal application. First, We designed LNA circuits and simulated it's high frequency characteristics using circuits simulator. For the simulation, we adopted high frequency libraries of all the devices used in LNA samples. By the simulation, Gain was 17 dB and Noise Figure was 1.4 dB. We used multilayer process of LTCC (Low Temperature Co-fired Ceramics) substrate and conductor, resistor pattern for the MCM-C LNA fabrication. We made 2 buried inductors, 2 buried capacitors and 3 buried resistors. The number of the total layers was 6. On the top layer, we patterned microstrip line and pads for the SMT device. We measured the high frequency characteristics, and the results were 14.7 dB Gain and 1.5 dB Noise Figure.

• Journal of Biomedical Engineering Research
• /
• v.28 no.1
• /
• pp.148-152
• /
• 2007

In this paper, we have synthesized $Gd_2O_3:Eu^{3+}$ nano phosphor particle using a low temperature solution-combustion method. We have investigated the structure and the luminescent characteristic as the sintering temperature and europium concentration. From XRD(X-ray diffraction) and SEM(scanning electron microscope) results, we have verified that the phosphor particle was fabricated a spherical shape with $30{\sim}40nm$ particle size. From the photoluminescence results, the strong peak exhibits at 611 um and the luminescent intensity depends on europium concentration. $Gd_2O_3:Eu$ fine phosphor particle has shown excellent luminescent efficiency at 5 wt% of europium concentration. The phosphors calcinated at $500^{\circ}C$ have possessed the x-ray peaks corresponding to the cubic phase of $Gd_2O_3$. As calcinations temperature increased to $700^{\circ}C$, the new monoclinic phase has identified except cubic patterns. From the luminescent decay time measurements, mean lifetimes were $2.3{\sim}2.6ms$ relatively higher than conventional bulk phosphors. These results indicate that $Gd_2O_3:Eu$ nano phosphor is possible for the operation at the low x-ray dose, therefore, the application as medical imaging detector.

• Korean Journal of Materials Research
• /
• v.12 no.5
• /
• pp.382-386
• /
• 2002

We studied growth and characterization of $SrBi_2Ta_2O_9$ (SBT) thin films fabricated by low temperature process under vacuum and/or oxygen ambient. A metal organic decomposition (MOD) method based on a spin-on technique and annealing process using a rapid thermal annealing (RTA) method was used to prepare the SBT films. The crystallinity of a ferroelectric phase of SBT thin films is related to the oxygen partial pressure during RTA process. Under an oxygen partial pressure higher than 30 Torr, the crystallization temperature inducing the ferroelectric SBT phase can be lowered to $650^{\circ}C$. Those films annealed at $650^{\circ}C$ in vacuum and oxygen ambient showed good ferroelectric properties, that is, the memory window of 0.5~0.9 V at applied voltage of 3~7 V and the leakage current density of 1.80{\times}10^{-8}$ A/$\textrm{cm}^2$ at an applied voltage of 5V. In comparison with the SBT thin films prepared at 80$0^{\circ}C$ in $O_2$ ambient by furnace annealing process, the SBT thin films prepared at $650^{\circ}C$ in vacuum and oxygen ambient using the RTA process showed a good crystallization and electrical properties which would be able to apply to the virtul device fabrication precess.

• Journal of the Korean Ceramic Society
• /
• v.45 no.12
• /
• pp.802-806
• /
• 2008

A proper sealant for low temperature SOFCs should show zero or low leak rates to avoid direct mixing of the fuel and oxidant gases or leakage of fuel gas during the operation of SOFCs. Furthermore, it should be chemically and/or mechanically stable in both oxidizing and reducing environments and chemically compatible with other fuel cell components. In the present work, we developed a novel compressed seal gasket of glass-based composite reinforced with ceramic particulate particles, which can efficiently control the viscous flow of glass matrix as well as the crystallization of glass phase. This novel sealing gasket showed excellent gas tightness under very low compressive load which would be suitable for the operation of SOFCs in the temperature range $600{\sim}650^{\circ}C$.