• 제목/요약/키워드: low-temperature fabrication

검색결과 731건 처리시간 0.027초

저온 동시 합성법을 이용한 나노급 인듐 주석 산화물 분말 제조 (Fabrication of ITO nanoparticles using co-synthesis method under low temperature)

  • 홍성제;최승석;김영훈;이찬재;한정인
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.1022-1025
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    • 2003
  • 본 연구에서는 저온 동시 합성법을 이용하여 ITO 나노 분말을 제조하였다. 저온 동시 합성법은 기존의 염화 인듐 및 염화 주석 염이 아닌 인듐 및 주석 유기물 염들을 사용하므로 기존의 $600{\sim}700^{\circ}C$가 아닌 $300^{\circ}C$ 이하에서 공정이 가능하고, 이로써 초미세급의 나노 분말을 얻을 수 있다. 또한 두가지 유기물 염을 동시에 산화시킴으로써 한번에 동시 합성이 가능하다. 이러한 저온 동시 합성법으로 제조한 나노 분말을 분석한 결과 분말의 크기는 평균 5 nm, 비 표면적은 약 $104m^2/g$ 이었다. 또한 EDS 및 XRD 분석 결과 분말의 결정상은 $In_2O_3$ 격자 내에 $3{\sim}8%$의 Sn이 고용된 [222], [400], [440]의 입방정 구조인 고품질의 ITO 나노 분말을 제조할 수 있었다.

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FHD 공정에 의한 저손실 실리카 슬랩 도파로 형성 (Fabrication of Low Loss Silica Slab Waveguide by Flame Hydrolysis Deposition)

  • 심재기;김태홍;신장욱;박상호;김덕준;성희경
    • 한국세라믹학회지
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    • 제37권6호
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    • pp.524-529
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    • 2000
  • Silica slab wavegudie was fabricated on Si substrates by FHD for planar optical passive devices. The slab waveguide consists of lower clad and core layers, where core layer index is controlled by GeO2 addition. Doping of GeO2 in silica is difficult because of the low deposition density due to nonspherical particle generation in FHD process. Silica core particles deposited at various conditions such as flame temperature and substrate scanning were analyzed by SEM and TEM. As the flame temperature increased, the surface roughness of the core layer was decreased up to 3.6 nm after consolidation. Index difference and thickness of core of slab waveguide were 0.3%, 8$\mu\textrm{m}$ respectively. Measured optical loss at TE mode was <0.04 dB/cm at 1.3$\mu\textrm{m}$ and <0.06 dB/cm at 1.55$\mu\textrm{m}$.

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2차원 ZnO 나노벽 구조 제조 (Fabrication of 2-Dimensional ZnO Nanowall Structure)

  • 김영정;;김영철;안승준;민준원
    • 한국세라믹학회지
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    • 제42권7호
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    • pp.521-524
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    • 2005
  • ZnO 2-D nanowall structure with around 100 nm thickness, which is composed of tens of nm scale ZnO single crystals, was fabricated through the low temperature chemical solution growth method. Electro Chemical Deposition (ECD) technique was applied to attach the ZnO seed crystals on ITO coated glass substrate. The ZnO nanowall structure was grown in the 0.015 mol$\%$ of aqueous solution of zinc nitrate and hexamethenamine at 60$^{\circ}C$ for 20 - 40 h. The nanowall structure depends on the ECD condition or the applied voltage and duration time. The nanowall shows a photoluminescence around 550 - 700 nm spectrum range.

저비용 고온초전도 선재 제조 연구 (The Fabrication of Low Cost High Temperature Superconducting Tape)

  • 한상철;성태현;한영희;이준성;이영우;정년호;김상준
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2000년도 KIASC Conference 2000 / 2000년도 학술대회 논문집
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    • pp.85-88
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    • 2000
  • Cu-free Bi-Sr-Ca-O powder mixtures were screen-printed on Cu tapes and heat-treated at 850-$870^{\circ}C$ for several minutes in air, oxygen, nitrogen and low oxygen pressure. Cu-free precursors were composed of Bi_{x}$SrCaO_{y}$ (x=1.2-2). In order to obtain the optimum heat-treatment condition, we studied on an effect of the precursor composition, the printing thickness and the heat-treatment atmosphere on the superconducting properties of Bi2212 films and the reaction mechanism of their rapid formation. Microstructures and phases of thick films were analyzed by optical microscope and XRD. The electric properties of superconducting films were examined by the four probe method. At heat-treatment temperature, the thick films were in a partially molten state by liquid reaction between CuO in the oxidized copper tape and the precursors which were printed on Cu tapes.

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섬유강화 초고온 세라믹스 복합재료(UHTC-CMC) (Ultra-high Temperature Ceramics-Ceramic Matrix Composites (UHTC-CMC))

  • 이세훈;룬펑;정경운
    • Composites Research
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    • 제30권2호
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    • pp.94-101
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    • 2017
  • $ZrB_2$, ZrC, $HfB_2$, HfC 및 TaC 등의 초고온 세라믹스들은 극초음속 체계의 노즈콘, 로켓 노즐 및 리딩 엣지 등에 적용하기 위하여 최근 활발한 연구가 진행되고 있다. 그러나 그 실제 적용은 다양한 원인 때문에 제약받고 있는데 취성 특성에 의한 낮은 열충격 저항 특성이 그 원인 중 하나이다. 그러한 문제는 세라믹 섬유강화 복합재료를 제조함으로써 개선될 수 있다. 본 리뷰에서는 초고온 세라믹스의 개념과 초고온 세라믹스 섬유강화 복합재료(UHTC-CMC)의 제조 공정 및 평가에 대하여 간단히 정리하였다. 또한 UHTC-CMC의 제조를 위한 세계적인 연구를 요약하였으며 한국에서 수행중인 초고온 세라믹스 연구에 대해 간단히 소개하였다.

마이크로 구조물 형성을 위한 핫 엠보싱용 플라스틱 스탬프 제작 (Fabrication of Hot Embossing Plastic Stamps for Microstructures)

  • 차남구;박창화;임현우;박진구;정준호;이응숙
    • 한국재료학회지
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    • 제15권9호
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    • pp.589-593
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    • 2005
  • Nanoimprinting lithography (NIL) is known as a suitable technique for fabricating nano and micro structures of high definition. Hot embossing is one of NIL techniques and can imprint on thin films and bulk polymers. Key issues of hot embossing are time and expense needed to produce a stamp withstanding a high temperature and pressure. Fabrication of a metal stamp such as an electroplated nickel is cost intensive and time consuming. A ceramic stamp made by silicon is easy to break when the pressure is applied. In this paper, a plastic stamp using a high temperature epoxy was fabricated and tested. The plastic stamp was relatively inexpensive, rapid to produce and durable enough to withstanding multiple hot embossing cycles. The merits of low viscosity epoxy solutions were a fast degassing and a rapid filling the microstructures. The hot embossing process with plastic stamp was performed on PMMA substrates. The hot embossing was conducted at 12.6 bar, $120^{\circ}C$ and 10 minutes. An imprinted PMMA wafer was almost same value of the plastic stamp after 10 times embossing. Entire fabrication process from silicon master to plastic stamp was completed within 12 hours.

SiO$_2$-TiO$_2$-RO(RO: BaO, CaO, SrO)계 고유전율 유리 제조 및 글라스/세라믹스의 소결 거동에 관한 연구 (A study on the glass fabrication and sintering behaviour of glass/ceramics for SiO2-TiO2-RO(RO: BaO, CaO, SrO) system)

  • 구기덕;오근호
    • 한국결정성장학회지
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    • 제8권4호
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    • pp.626-633
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    • 1998
  • 본 연구에서는 고유전율의 저온소성용 글라스/세라믹을 제조하고자, SiO2-TiO2-RO계 결정화 유리를 제조하고 Al2O3를 필러 물질로 혼합하여 복합체를 제조하고 그 특성을 관찰하였다. 본 유리조성으로써 $900^{\circ}C$ 이하에서 결정화되는 유리의 제조가 가능하였고, RO (BaO, CaO, SrO)의 성분에 따라 결정화 온도는 변화함을 알 수 있었다. 본 유리조성에 $Bi_2O_3$를 플럭스로 첨가하고, 세라믹 필러로써 Al2O3를 사용하여 $860^{\circ}C$에서 소성함으로써 고유전율의 저온소성용 글라스/세라믹의 제조가 가능하였고, 이때 복합체의 밀도는 3.96g/$\textrm{cm}^3$ 이었고, 유전율은 17, Q.f 값은 600이었다.

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미세기공 알루미늄 소재의 기계적 성질 (Mechanical Properties of Aluminium Alloy with Cellular Structure.)

  • 윤성원;이승후;강충길
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2002년도 춘계학술대회 논문집
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    • pp.695-698
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    • 2002
  • Induction heating process is one of the most efficient heating process in terms of temperature control accuracy and heating time saving. In the past study, fabrication process of cellular 6061 alloys by powder metallurgical route and induction heating process was studied. To supplement the framing conditions that studied in past study, effect of induction heating capacity and holding time at foaming temperature were investigated. Under the achieved framing conditions, teamed 6061 alloys were fabricated for variation of foaming temperature, and porosities(%)-foaming temperature curves were obtained by try-error experimental method. Uniaxial compression tests were performed to investigate the relationship between porosities(%) and stress-strain curves of framed 6061 alloy. Also, energy absorption capacity and efficiency were calculated from stress-strain curves to investigated. Moreover, dependence of plateau stress on strain rate was investigated in case of cellular 6061 alloy with low porosities(%)

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Phase Transition and Thermal Expansion Behavior of Zirconia Setter Fabricated from Fused CaO Stabilized Zirconia

  • Park, Ji-Hoon;Bang, Il-Hwan;Lee, Sang-Jin
    • 한국세라믹학회지
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    • 제56권2호
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    • pp.184-190
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    • 2019
  • To improve resistance in thermal shock of zirconia setter which is frequently and repeatedly exposed to high temperature, high degree of porosity and control of thermal expansion are needed for which the fused CSZ (CaO stabilized zirconia) is used to produce the zirconia setter. In the present study, the effects of sintering temperature, cool down condition, addition of CaO stabilizer, and addition of other additives on phase transition and thermal expansion behavior of the fabrication process of zirconia setter, were examined. The zirconia setter, fabricated with fused CSZ at 1550℃, exhibited 20.4 MPa of flexural strength, 6.8% of absorbance, and 27.9% of apparent porosity. The rapid change in thermal expansion of zirconia setter is observed at temperature around 800℃, and it was reduced by low firing temperature, slowed cooled down, and addition of CaO.

고온 특성을 위한 AlGaAs/GaAs HBT의 설계에 관한 연구 (Ohmic Resistance of AlGaAs/GaAs HBT at High Temperature)

  • 이준영;신훈법;안형근;한득영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.366-370
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    • 2002
  • GaAs has become a very popular material for the fabrication of high frequency, low noise and microwave power devices. GaAs devices are also well suited for high temperature operation because of the large band gap of this material. The standard GaAs technology and device structures have to be modified for stable operation at high temperature. In this paper, AlGaAs/GaAs HBT considering stable ohmic contact at high temperature as well as thermal effect such as self-heating effect are introduced. All the data obtained study will be used as input data for the simulator and the result will be compared with an analytical model available in this study,

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