• 반도체디스플레이기술학회지
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• 제6권2호
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• pp.15-18
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• 2007

Effects of $O_2$ flow during deposition on Si crystallization at low substrate temperature were studied. Silicon thin films were prepared on $SiO_2$ substrates in a low-pressure chemical vapor deposition chamber using a mixture of $SiH_4$ and $H_2$. In some cases $O_2$ was intentionally introduced during deposition. Growth of poly silicon was observed at the substrate temperature as low as $480^{\circ}C$ when $O_2$ was flowed during deposition implying that crystallization of Si was enhanced by $O_2$ flow. On the other hand, $O_2$ flow did not show any significant effects at higher substrate temperature, where deposition rate is relatively fast. Enhancement mechanism of Si crystallization by $O_2$ flow was suggested from these results.

• 지식경영연구
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• 제12권1호
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• pp.39-52
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• 2011

Many LCD manufacturers continue to develop the technologies of LCD manufacturing processes for the reduction of production cost, power consumption and high-resolution. The LTPS (Low Temperature Polycrystalline Silicon) crystallization technology is important for rearranging the internal structure of liquid crystal grain by adding certain energy to amorphous silicon and turning it into poly-silicon in order to manufacture LCD with better performance. We consider 14 existing technologies of LTPS crystallization in the LCD manufacturing and present an intelligent analysis methodology using patent map and AHP (Analytic Hierarchy Process) analysis for determining an optimal LTPS crystallization technology. By using patent map analysis, we easily understand the development process and mega-trend of LTPS crystallization technologies and their relationship. By using AHP analysis, we evaluate 14 LTPS technologies. Through the use of proposed methodology, we determine the Continuous Wave Laser Lateral Crystallization technology as an optimal one.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.177-180
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• 2002

Microwave has been utilized for low-temperature crystallization of amorphous Si films. Microwave annealing lowered the crystallization temperature and shortened the annealing time. The combination of Ni and microwave applications on a-Si films further enhanced the crystallization. The enhancement was due to both reduced nucleation activation energy and growth activation energy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.289.1-289.1
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• 2016

Germanium (Ge) with higher carrier mobility and a lower crystallization temperature has been considered as the channel material of thin-film transistors for display applications. Various methods were studied for crystallizaion of poly-Ge from amorphous Ge at low temperature. Especially Metal induced crystalliazation (MIC) process was widely studied because low process cost. In this paper, we investigate copper diffusion process of different thick (70 nm, 350 nm) poly-Ge film obtained by MIC process at various temperatures (250, 300, and $350^{\circ}C$) through atomic force microscopy (AFM), Raman spectroscopy, and secondary ion mass spectroscopy (SIMS) measurement. Crystallization completeness and grain size was similar in all the conditions. Copper diffusion profile of 370 nm poly-Ge film show simirly results regardless of process temperature. However, copper diffusion profile of 70 nm poly-Ge film show different results by process temperature.

• 한국세라믹학회지
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• 제29권6호
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• pp.451-458
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• 1992

Dense glass-ceramics for low firing temperature substrate were prepared by addition of CeO2 flux to the glass of MgO-Al2O3-SiO2 system. Glass powders were fabricated by melting at 150$0^{\circ}C$ and ball milling. Glass powder compacts were sintered at 800~100$0^{\circ}C$ for 3h. The crystallization and the shrinkage behaviors of glass powder compacts were analyzed by XRD, DTA and TMA. The shrinkage of glass powder compact increased with increasing the amount of CeO2. Because the softening temperature decreased and the crystallization temperature increased with increasing the amount of CeO2. Apparently, addition of CeO2 prevented formation of $\mu$-cordierite phase from the glass-ceramics and improved formation of $\alpha$-cordierite phase. Therefore crystallization properties were enhanced.

• 한국식품영양과학회지
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• 제26권6호
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• pp.1028-1032
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• 1997

Low-temperature crystallization method silver nitrate-impregnated silicic acid column chromatography were applied for the isolation of pure $\alpha$-linolenic acid(ALA) from perilla seed oil. ALA or 78% in purity(HALA; yield, 83%) was obtained from the fatty acid mixture(ALA, 65.7%) derived from perilla oil by the low-temperature crystallization method, when the mixture was frozen at -8$0^{\circ}C$ for 210min. ALA over 90% in purity(yield, 71%) was also obtained from HALA ethyl esters(ALA, 78%) by the silver nitrate-impregnated silicic acid column(100cm$\times$10cm, i.d.) chromatography. In addition, the silver nitrate-impregnated silicic acid could be semipermanently used for isolation of ALA, because $Ag^{+}$ ion was not dissociated from the stationary phase.

• Macromolecular Research
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• 제12권1호
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• pp.1-10
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• 2004

The structural changes occurring in the isothermal crystallization processes of polyethylene (PE), poly-oxymethylene (POM), and vinylidene fluoridetrifluoroethylene (VDFTrFE) copolymer have been reviewed on the basis of our recent experimental data collected by the time-resolved measurements of synchrotron-sourced wide-angle (WAXS) and small-angle X-ray scatterings (SAXS) and infrared spectra. The temperature jump from the melt to a crystallization temperature could be measured at a cooling rate of 600-1,000 $^{\circ}C$/min, during which we collected the WAXS, SAXS, and infrared spectral data successfully at time intervals of ca. 10 sec. In the case of PE, the infrared spectral data clarified the generation of chain segments of partially disordered trans conformations immediately after the jump. These segments then became transformed into more-regular all-trans-zigzag forms, followed by the formation of an orthorhombic crystal lattice. At this stage, the generation of a stacked lamella structure having an 800-${\AA}$-long period was detected in the SAXS data. This structure was found to transfer successively to a more densely packed lamella structure having a 400-${\AA}$-long period as a result of the secondary crystallization of the amorphous region in-between the original lamellae. As for POM, the formation process of a stacked lamella structure was essentially the same as that mentioned above for PE, as evidenced from the analysis of SAXS and WAXS data. The observation of morphology-sensitive infrared bands revealed the evolution of fully extended helical chains after the generation of lamella having folded chain structures. We speculate that these extended chains exist as taut tie chains passing continuously through the neighboring lamellae. In the isothermal crystallization of VDFTrFE copolymer from the melt, a paraelectric high-temperature phase was detected at first and then it transferred into the ferroelectric low-temperature phase at a later stage. By analyzing the reflection profile of the WAXS data, the structural ordering in the high-temperature phase and the ferroelectric phase transition to the low-temperature phase of the multi-domain structure were traced successfully.

• 한국세라믹학회지
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• 제54권5호
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• pp.395-399
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• 2017

The thermal properties and crystallization behavior of calcium phosphate glass fabricated using eggshell were examined. Nature eggshell has several impurities in the main component of $CaCO_3$. To manufacture calcium phosphate glass, washed eggshell was dissolved in aqua-regia while adding a solution of isopropyl alcohol, D. I. water and phosphoric acid. The calcined precursor was melted at $1000^{\circ}C$, and the glass ($T_g$ : $540^{\circ}C$) was crystallized at $620{\sim}640^{\circ}C$, which temperature range is relatively low compared to the crystallization temperature of other general types of calcium phosphate glass. The calcium phosphate glass using eggshell was successfully crystallized without any additional nucleating agents due to the multiple effects of impurities such as $Fe_2O_3$, $Al_2O_3$, SrO and $SiO_2$ in the eggshell. The main crystalline phase was ${\beta}-Ca(PO_3)_2$ and a biocompatible material, hydroxyapatite, was also observed. The crystallization process was completed under the condition of a holding time of only 1 h at the low temperature.

• 한국표면공학회지
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• 제43권1호
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• pp.7-11
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• 2010

Solid phase crystallization (SPC) is a simple method in producing a polycrystalline phase by annealing amorphous silicon (a-Si) in a furnace environment. Main motivation of the crystallization technique is to fabricate low temperature polycrystalline silicon thin film transistors (LTPS-TFTs) on a thermally susceptible glass substrate. Studies on SPC have been naturally focused to the low temperature regime. Recently, fabrication of polycrystalline silicon (poly-Si) TFT circuits from a high temperature polycrystalline silicon process on steel foil substrates was reported. Solid phase crystallization of a-Si films proceeds by nucleation and growth. After nucleation polycrystalline phase is propagated via twin mediated growth mechanism. Elliptically shaped grains, therefore, contain intra-granular defects such as micro-twins. Both the intra-granular and the inter-granular defects reflect the crystallinity of SPC poly-Si. Crystallinity and SPC kinetics of high temperatures were compared to those of low temperatures using Raman analysis newly proposed in this study.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.243-246
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• 1997

A new technique for low temperature crystallization of amorphous silicon, called field aided lateral crystallization(FALC) was attempted. To demonstrate the concept of FALC, thin layer of nickel(30${\AA}$) was deposited on top of amorphous silicon film and the electric field was applied during the crystallization. The effects of electric field on the crystallization behavior of amorphous silicon film were investigated.