• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.243.1-243.1
• /
• 2015

To replace the based on silicon solar cells, the third generation solar cells, Dye-sensitized solar cells (DSSCs), is low fabrication than silicon solar cells, environmentally friendly and can be applied to various field. For this reason, the DSSCs have been continuously researched. But DSSCs have one drawback that is the low power conversion efficiency (PCE) than silicon solar cells. To solve the problem, we used the backr-eflector the Al foil that can be easily obtained from the surrounding in order to improve the efficiency of the DSSCs. Easily detachable Al foil back-reflector increases the photocurrent by enhancing the harvesting light because the discarded light is reused. It also leads to enhance the power conversion efficiency (PCE). In addition, we compared with the efficiency of the DSSCs that is applied and does not be applied with back-reflector according to the thickness of the TiO2 photoelectrode. When the back-reflector is applied to DSSCs, the photocurrent is increased. It leads to affect the efficiency. We used to solar simulator and Electrochemical Impedance Spectroscopy (EIS) to confirm the PCE and resistance. The DSSCs were also measured by External Quantum effect (EQE). At the same time, FE-SEM and XRD were used to confirm the thickness of layer and crystal structural of photoelectrode.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.434.2-434.2
• /
• 2014

We observe enhanced pH response of solution-gated field-effect transistors (SG-FET) having 1D-2D hybrid channel of vertical grown ZnO nanorods grown on CVD graphene (Gr). In recent years, SG-FET based on Gr has received a lot of attention for biochemical sensing applications, because Gr has outstanding properties such as high sensitivity, low detection limit, label-free electrical detection, and so on. However, low-defect CVD Gr has hardly pH responsive due to lack of hydroxyl group on Gr surface. On the other hand, ZnO, consists of stable wurtzite structure, has attracted much interest due to its unique properties and wide range of applications in optoelectronics, biosensors, medical sciences, etc. Especially, ZnO were easily grown as vertical nanorods by hydrothermal method and ZnO nanostructures have higher sensitivity to environments than planar structures due to plentiful hydroxyl group on their surface. We prepared for ZnO nanorods vertically grown on CVD Gr (ZnO nanorods/Gr hybrid channel) and to fabricate SG-FET subsequently. We have analyzed hybrid channel FETs showing transfer characteristics similar to that of pristine Gr FETs and charge neutrality point (CNP) shifts along proton concentration in solution, which can determine pH level of solution. Hybrid channel SG-FET sensors led to increase in pH sensitivity up to 500%, compared to pristine Gr SG-FET sensors. We confirmed plentiful hydroxyl groups on ZnO nanorod surface interact with protons in solution, which causes shifts of CNP. The morphology and electrical characteristics of hybrid channel SG-FET were characterized by FE-SEM and semiconductor parameter analyzer, respectively. Sensitivity and sensing mechanism of ZnO nanorods/Gr hybrid channel FET will be discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.98-98
• /
• 1999

Highly transparent and conducting tin-doped indium oxide (ITO) films were deposited on polycarbonate substrate by ion-assited deposition. Low substrate temperature (<10$0^{\circ}C$) was maintained during deposition to prevent the polycarbonate substrate from be deformed. The influence of ion beam energy, ion current density, and tin doping, on the structural, electrical and optical properties of deposited films was investigated. Indium oxide and tin-doped indium oxide (9 wt% SnO2) sources were evaporated with assisting ionized oxygen in high vacuum chamber at a pressure of 2$\times$10-5 torr and deposition temperature was varied from room temperature to 10$0^{\circ}C$. Oxygen gas was ionized and accelerated by cold hallow-cathode type ion gun at oxygen flow rate of 1 sccm(ml/min). Ion bea potential and ion current of oxygen ions was changed from 0 to 700 V and from 0.54 to 1.62 $\mu$A. The change of microstructure of deposited films was examined by XRD and SEM. The electrical resistivity and optical transmittance were measured by four-point porbe and conventional spectrophotometer. From the results of spectrophotometer, both the refractive index and the extinction coefficient were derived.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.289.1-289.1
• /
• 2014

In this study, we made a organic thin film device in MIS(Metal-Insulator-Semiconductor) structure by using PVP (Poly vinyl phenol) as a insulating layer, and CdSe/ZnS nano particles which have a core/shell structure inside. We dissolved PVP and PMF in PGMEA, organic solvent, then formed a thin film through a spin coating. After that, it was cross-linked by annealing for 1 hour in a vacuum oven at $185^{\circ}C$. We operated FTIR measurement to check this, and discovered the amount of absorption reduced in the wave-length region near 3400 cm-1, so could observe decrease of -OH. Boonton7200 was used to measure a C-V relationship to confirm a properties of the nano particles, and as a result, the width of the memory window increased when device including nano particles. Additionally, we used HP4145B in order to make sure the electrical characteristics of the organic thin film device and analyzed a conduction mechanism of the device by measuring I-V relationship. When the voltage was low, FNT occurred chiefly, but as the voltage increased, Schottky Emission occurred mainly. We synthesized CdSe/ZnS and to confirm this, took a picture of Si substrate including nano particles with SEM. Spherical quantum dots were properly made. Due to this study, we realized there is high possibility of application of next generation memory device using organic thin film device and nano particles, and we expect more researches about this issue would be done.

• Polymer(Korea)
• /
• v.31 no.1
• /
• pp.31-36
• /
• 2007

It has been reported that the surface properties of the plasma treated material were changed while maintaining its bulk properties. In this study, surface modification of nylon fiber by plasma treatment was tried to attain high water-repellency Nylon fiber was treated with RF plasma under a vacuum system using various parameters such as gas specious, processing time and processing power. Morphological changes by low pressure plasma treatment were observed using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Moreover, the mechanical and inherent properties were analyzed by tensile strength, differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA). The high water-repellency property of nylon fiber was evaluated by a water-drop standard test under various conditions in terms of aging effect. The results showed that the water-repellency of plasma-surface-treated nylon fiber was greatly improved compared to untreated nylon fiber.

• Journal of the Korean Wood Science and Technology
• /
• v.51 no.1
• /
• pp.1-13
• /
• 2023

Sengon (Falcataria moluccana Miq.) tree offers a wood of low quality and durability owing to its low density and thin cell walls. This study aimed to improve the properties of sengon wood by making the wood magnetic, producing new functions, and characterizing magnetic sengon wood. Each wood sample was treated using one of the following impregnation solutions: Untreated, 7.5% nano magnetite-furfuryl alcohol (Fe₃O₄-FA), 10% nano Fe₃O₄-FA, and 12.5% nano Fe₃O₄-FA. The impregnation process began with vacuum treatment at 0.5 bar for 2 h, followed by applying a pressure of 1 bar for 2 h. The samples were then tested for dimensional stability and density and characterized using scanning electron microscopy and energy-dispersive X-ray spectroscopy (SEM-EDX), Fourier transform infrared spectrometry (FTIR), X-ray diffraction (XRD) analysis, and vibrating sample magnetometry (VSM) analysis. The results showed that the Fe₃O₄-FA impregnation treatment considerable affected the dimensional stability, measured in terms of weight percent gain, anti-swelling efficiency, water uptake, and bulking effect, as well as the density of sengon wood. Changes in wood morphology were detected by the presence of Fe deposits in the cell walls and cell cavities of the wood using SEM-EDX analysis. XRD and FTIR analyses showed the appearance of magnetite peaks in the diffractogram and Fe-O functional groups. Based on the VSM analysis, treated sengon wood is classified as a superparamagnetic material with soft magnetic properties. Overall, 10% Fe₃O₄-FA treatment led to the highest increase in dimensional stability and density of sengon wood.

• Journal of the Korean Vacuum Society
• /
• v.17 no.6
• /
• pp.528-537
• /
• 2008

60 nm and 20 nm thick hydrogenated amorphous silicon(a-Si:H) layers were deposited on 200 nm $SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by an e-beam evaporator. Finally, 30 nm-Ni/(60 nm and 20 nm) a-Si:H/200 nm-$SiO_2$/single-Si structures were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 40 sec. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy(FE-SEM), transmission electron microscopy(TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide from the 60 nm a-Si:H substrate showed low sheet resistance from $400^{\circ}C$ which is compatible for low temperature processing. The nickel silicide from 20 nm a-Si:H substrate showed low resistance from $300^{\circ}C$. Through HRXRD analysis, the phase transformation occurred with silicidation temperature without a-Si:H layer thickness dependence. With the result of FE-SEM and TEM, the nickel silicides from 60 nm a-Si:H substrate showed the microstructure of 60 nm-thick silicide layers with the residual silicon regime, while the ones from 20 nm a-Si:H formed 20 nm-thick uniform silicide layers. In case of SPM, the RMS value of nickel silicide layers increased as the silicidation temperature increased. Especially, the nickel silicide from 20 nm a-Si:H substrate showed the lowest RMS value of 0.75 at $300^{\circ}C$.

• Proceedings of the KIEE Conference
• /
• 1998.07e
• /
• pp.1761-1763
• /
• 1998

ITO(Iridium-Tin Oxide) thin film, as discharge electrodes in AC PDP, should have low resistivity and high transparency. Regarded as a high deposition rate method, the ITO thin film fabricated by the facing target sputtering system has been studied in this paper. The electrical property of the ITO film deposited below $150^{\circ}C$ is not satisfied. The SEM pictures show that the ITO films deposited below $150^{\circ}C$ are amorphous. After being annealed the amorphous ITO films become crystalline, and for this reason, the electrical property of amorphous ITO films can be effectively improved by annealing process. An ITO film with the resistivity as low as $1.99{\times}10^{-4}$ and transparency above 85% has be gotten after vacuum annealing at $300^{\circ}C$ for 2 hours while deposited at $75^{\circ}C$. The corresponding deposition rate is $220{\AA}/min$.

• Journal of Technologic Dentistry
• /
• v.21 no.1
• /
• pp.15-26
• /
• 1999

This study was carried out by observing to composition of oxide on the surface of dental porcelain low gold alloy with various Indium additions according to the degassing and analysing the change composition of additional elements In on diffusion behaviors of Porcelain-matal surface. The specimens used were Au-Pd-Ag alloys by small indium addition. These specimens were treated for 10min at $1000^{\circ}C$ in vacuum condition. To investigate the microsturcture of oxidized alloy surface, SEM and EDAX were used, and EPMA were used to investigate the diffusion behaviors of porcelain-metal surface. X-ray diffraction were used to observe the morphological changes in the oxidation zone. The results of this study were obtained as follows ; 1) The hardness of alloy increased with increasing amount of In addition. 2) The formation of oxidation increased with increasing In content after heat treatment. 3) Diffusion of indium elements increased with increasing In content in metal-porcelain surface after firing. 4) The oxidations of alloy surface were mainly $In_2O_3$.

• Journal of the Korean Vacuum Society
• /
• v.6 no.2
• /
• pp.143-150
• /
• 1997

In this study, doffusion barrier properties of 1000 $\AA$ thick molybdenum compound(Mo, Mo-N, $MoSi_2$, Mo-Si-N) films were investigated using sheet resistance measurement, X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), Scanning electron mircoscopy(SEM), and Rutherford back-scattering spectrometry(RBS). Each barrier material was deposited by the dc magnetron sputtering and annealed at 300-$800^{\circ}C$ for 30 min in vacuum. Mo and MoSi2 barrier were faied at low temperatures due to Cu diffusion through grain boundaries and defects in Mo thin film and the reaction of Cu with Si within $MoSi_2$, respectively. A failure temperature could be raised to $650^{\circ}C$-30 min in the Mo barrier system and to $700^{\circ}C$-30 min in the Mo-silicide system by replacing Mo and $MoSi_2$ with Mo-N and Mo-Si-N, respectively. The crystallization temperature in the Mo-silicide film was raised by the addition of $N_2$. It is considered that not only the $N_2$, stuffing effect but also the variation of crystallization temperature affects the reaction of Cu with Si within Mo-silicide. It is found that Mo-Si-N is the more effective barrier than Mo, $MoSi_2$, or Mo-N to copper penetraion preventing Cu reaction with the substrate for $30^{\circ}C$min at a temperature higher than $650^{\circ}C$.